{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,2,22]],"date-time":"2025-02-22T00:48:44Z","timestamp":1740185324578,"version":"3.37.3"},"reference-count":8,"publisher":"Elsevier BV","issue":"5-8","license":[{"start":{"date-parts":[[2003,5,1]],"date-time":"2003-05-01T00:00:00Z","timestamp":1051747200000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/www.elsevier.com\/tdm\/userlicense\/1.0\/"},{"start":{"date-parts":[[2003,5,1]],"date-time":"2003-05-01T00:00:00Z","timestamp":1051747200000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/www.elsevier.com\/legal\/tdmrep-license"},{"start":{"date-parts":[[2003,5,1]],"date-time":"2003-05-01T00:00:00Z","timestamp":1051747200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-017"},{"start":{"date-parts":[[2003,5,1]],"date-time":"2003-05-01T00:00:00Z","timestamp":1051747200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"},{"start":{"date-parts":[[2003,5,1]],"date-time":"2003-05-01T00:00:00Z","timestamp":1051747200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-012"},{"start":{"date-parts":[[2003,5,1]],"date-time":"2003-05-01T00:00:00Z","timestamp":1051747200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2003,5,1]],"date-time":"2003-05-01T00:00:00Z","timestamp":1051747200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-004"}],"funder":[{"DOI":"10.13039\/501100000038","name":"Natural Sciences and Engineering Research Council of Canada","doi-asserted-by":"publisher","id":[{"id":"10.13039\/501100000038","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":["elsevier.com","sciencedirect.com"],"crossmark-restriction":true},"short-container-title":["Microelectronics Journal"],"published-print":{"date-parts":[[2003,5]]},"DOI":"10.1016\/s0026-2692(03)00037-5","type":"journal-article","created":{"date-parts":[[2003,4,5]],"date-time":"2003-04-05T02:24:44Z","timestamp":1049509484000},"page":"415-417","update-policy":"https:\/\/doi.org\/10.1016\/elsevier_cm_policy","source":"Crossref","is-referenced-by-count":6,"title":["Tunable InAs quantum-dot lasers grown on (100) InP"],"prefix":"10.1016","volume":"34","author":[{"given":"C.N\u0131\u0300.","family":"Allen","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"P.J.","family":"Poole","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"P.","family":"Marshall","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"S.","family":"Raymond","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"S.","family":"Fafard","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"78","reference":[{"issue":"2","key":"10.1016\/S0026-2692(03)00037-5_BIB1","doi-asserted-by":"crossref","first-page":"578","DOI":"10.1116\/1.582229","article-title":"Widely tunable self-assembled quantum dot lasers","volume":"18","author":"Hinzer","year":"2000","journal-title":"J. Vac. Sci. Technol. A"},{"issue":"18","key":"10.1016\/S0026-2692(03)00037-5_BIB2","doi-asserted-by":"crossref","first-page":"1544","DOI":"10.1049\/el:20001080","article-title":"Low-threshold quantum dot lasers with 201 nm tuning range","volume":"36","author":"Varangis","year":"2000","journal-title":"Electron. Lett."},{"issue":"19","key":"10.1016\/S0026-2692(03)00037-5_BIB3","doi-asserted-by":"crossref","first-page":"3629","DOI":"10.1063\/1.1479200","article-title":"InAs self-assembled quantum-dot lasers grown on (100) InP","volume":"80","author":"Allen","year":"2002","journal-title":"Appl. Phys. Lett."},{"issue":"17","key":"10.1016\/S0026-2692(03)00037-5_BIB4","doi-asserted-by":"crossref","first-page":"2527","DOI":"10.1063\/1.125066","article-title":"Determination of single-pass optical gain and internal loss using a multisection device","volume":"75","author":"Thomson","year":"1999","journal-title":"Appl. Phys. Lett."},{"issue":"7","key":"10.1016\/S0026-2692(03)00037-5_BIB5","doi-asserted-by":"crossref","first-page":"670","DOI":"10.1049\/el:19980373","article-title":"Low threshold quantum dot injection laser emitting at 1.9 \u03bcm","volume":"34","author":"Ustinov","year":"1998","journal-title":"Electron. Lett."},{"issue":"3","key":"10.1016\/S0026-2692(03)00037-5_BIB6","doi-asserted-by":"crossref","first-page":"267","DOI":"10.1063\/1.1339846","article-title":"Ground-state lasing at room temperature in long-wavelength InAs quantum-dot lasers on InP (311)B substrates","volume":"78","author":"Saito","year":"2001","journal-title":"Appl. Phys. Lett."},{"issue":"17","key":"10.1016\/S0026-2692(03)00037-5_BIB7","doi-asserted-by":"crossref","first-page":"2629","DOI":"10.1063\/1.1319527","article-title":"Enhanced wavelengtth tuning of an InGaAsP\u2013InP laser with a thermal-strain-magnifying trench","volume":"77","author":"Cohen","year":"2000","journal-title":"Appl. Phys. Lett."},{"issue":"11","key":"10.1016\/S0026-2692(03)00037-5_BIB8","doi-asserted-by":"crossref","first-page":"5815","DOI":"10.1063\/1.1368156","article-title":"Band parameters for III\u2013V compound semiconductors and their alloys","volume":"89","author":"Vurgaftman","year":"2001","journal-title":"J. Appl. Phys."}],"container-title":["Microelectronics Journal"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/api.elsevier.com\/content\/article\/PII:S0026269203000375?httpAccept=text\/xml","content-type":"text\/xml","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/api.elsevier.com\/content\/article\/PII:S0026269203000375?httpAccept=text\/plain","content-type":"text\/plain","content-version":"vor","intended-application":"text-mining"}],"deposited":{"date-parts":[[2024,7,5]],"date-time":"2024-07-05T17:59:40Z","timestamp":1720202380000},"score":1,"resource":{"primary":{"URL":"https:\/\/linkinghub.elsevier.com\/retrieve\/pii\/S0026269203000375"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2003,5]]},"references-count":8,"journal-issue":{"issue":"5-8","published-print":{"date-parts":[[2003,5]]}},"alternative-id":["S0026269203000375"],"URL":"https:\/\/doi.org\/10.1016\/s0026-2692(03)00037-5","relation":{},"ISSN":["1879-2391"],"issn-type":[{"type":"print","value":"1879-2391"}],"subject":[],"published":{"date-parts":[[2003,5]]},"assertion":[{"value":"Elsevier","name":"publisher","label":"This article is maintained by"},{"value":"Tunable InAs quantum-dot lasers grown on (100) InP","name":"articletitle","label":"Article Title"},{"value":"Microelectronics Journal","name":"journaltitle","label":"Journal Title"},{"value":"https:\/\/doi.org\/10.1016\/S0026-2692(03)00037-5","name":"articlelink","label":"CrossRef DOI link to publisher maintained version"},{"value":"converted-article","name":"content_type","label":"Content Type"},{"value":"Copyright \u00a9 2003 Elsevier Science Ltd. All rights are reserved, including those for text and data mining, AI training, and similar technologies.","name":"copyright","label":"Copyright"}]}}