{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,2,22]],"date-time":"2025-02-22T00:48:45Z","timestamp":1740185325318,"version":"3.37.3"},"reference-count":7,"publisher":"Elsevier BV","issue":"5-8","license":[{"start":{"date-parts":[[2003,5,1]],"date-time":"2003-05-01T00:00:00Z","timestamp":1051747200000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/www.elsevier.com\/tdm\/userlicense\/1.0\/"},{"start":{"date-parts":[[2003,5,1]],"date-time":"2003-05-01T00:00:00Z","timestamp":1051747200000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/www.elsevier.com\/legal\/tdmrep-license"},{"start":{"date-parts":[[2003,5,1]],"date-time":"2003-05-01T00:00:00Z","timestamp":1051747200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-017"},{"start":{"date-parts":[[2003,5,1]],"date-time":"2003-05-01T00:00:00Z","timestamp":1051747200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"},{"start":{"date-parts":[[2003,5,1]],"date-time":"2003-05-01T00:00:00Z","timestamp":1051747200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-012"},{"start":{"date-parts":[[2003,5,1]],"date-time":"2003-05-01T00:00:00Z","timestamp":1051747200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2003,5,1]],"date-time":"2003-05-01T00:00:00Z","timestamp":1051747200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-004"}],"funder":[{"DOI":"10.13039\/100007703","name":"North Carolina State University","doi-asserted-by":"publisher","id":[{"id":"10.13039\/100007703","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100001807","name":"Funda\u00e7\u00e3o de Amparo \u00e0 Pesquisa do Estado de S\u00e3o Paulo","doi-asserted-by":"publisher","id":[{"id":"10.13039\/501100001807","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":["elsevier.com","sciencedirect.com"],"crossmark-restriction":true},"short-container-title":["Microelectronics Journal"],"published-print":{"date-parts":[[2003,5]]},"DOI":"10.1016\/s0026-2692(03)00051-x","type":"journal-article","created":{"date-parts":[[2003,4,23]],"date-time":"2003-04-23T22:32:29Z","timestamp":1051137149000},"page":"571-573","update-policy":"https:\/\/doi.org\/10.1016\/elsevier_cm_policy","source":"Crossref","is-referenced-by-count":3,"title":["Cross-sectional Scanning Probe Microscopy of GaN-based p\u2013n heterostructures"],"prefix":"10.1016","volume":"34","author":[{"given":"M.I.N.","family":"da Silva","sequence":"first","affiliation":[]},{"given":"J.C.","family":"Gonz\u00e1lez","sequence":"additional","affiliation":[]},{"given":"P.E.","family":"Russell","sequence":"additional","affiliation":[]}],"member":"78","reference":[{"issue":"13","key":"10.1016\/S0026-2692(03)00051-X_BIB1","doi-asserted-by":"crossref","first-page":"1103","DOI":"10.1063\/1.99224","article-title":"High-resolution capacitance measurement and potentiometry by force microscopy","volume":"52","author":"Martin","year":"1988","journal-title":"Appl. Phys. Lett."},{"issue":"25","key":"10.1016\/S0026-2692(03)00051-X_BIB2","doi-asserted-by":"crossref","first-page":"2921","DOI":"10.1063\/1.105227","article-title":"Kelvin probe force microscopy","volume":"58","author":"Nonnenmacher","year":"1991","journal-title":"Appl. Phys. Lett."},{"issue":"1\u20133","key":"10.1016\/S0026-2692(03)00051-X_BIB3","doi-asserted-by":"crossref","first-page":"88","DOI":"10.1016\/S0921-5107(96)01688-1","article-title":"Scanning probe microscopy for 2-D semiconductor dopant profiling and device failure analysis","volume":"42","author":"Henning","year":"1996","journal-title":"Mater. Sci. Engng, B"},{"issue":"2","key":"10.1016\/S0026-2692(03)00051-X_BIB4","doi-asserted-by":"crossref","first-page":"1547","DOI":"10.1116\/1.589136","article-title":"Kelvin probe force microscopy for characterization of semiconductor devices and processes","volume":"14","author":"Tanimoto","year":"1996","journal-title":"J. Vac. Sci. Technol., B"},{"issue":"20","key":"10.1016\/S0026-2692(03)00051-X_BIB5","doi-asserted-by":"crossref","first-page":"2907","DOI":"10.1063\/1.126513","article-title":"Investigation of the cleaved surface of a p\u2013i\u2013n laser using Kelvin probe force microscopy and two-dimensional physical simulations","volume":"76","author":"Robin","year":"2000","journal-title":"Appl. Phys. Lett."},{"issue":"2","key":"10.1016\/S0026-2692(03)00051-X_BIB6","doi-asserted-by":"crossref","first-page":"1418","DOI":"10.1063\/1.1329669","article-title":"Cross-sectional electrostatic force microscopy of thin-film solar cells","volume":"89","author":"Ballif","year":"2001","journal-title":"J. Appl. Phys."},{"issue":"1","key":"10.1016\/S0026-2692(03)00051-X_BIB7","doi-asserted-by":"crossref","first-page":"337","DOI":"10.1063\/1.1371941","article-title":"Surface potential measurements on GaN and AlGaN\/GaN heterostructures by Kelvin probe microscopy","volume":"90","author":"Koley","year":"2001","journal-title":"J. Appl. Phys."}],"container-title":["Microelectronics Journal"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/api.elsevier.com\/content\/article\/PII:S002626920300051X?httpAccept=text\/xml","content-type":"text\/xml","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/api.elsevier.com\/content\/article\/PII:S002626920300051X?httpAccept=text\/plain","content-type":"text\/plain","content-version":"vor","intended-application":"text-mining"}],"deposited":{"date-parts":[[2024,7,5]],"date-time":"2024-07-05T18:01:47Z","timestamp":1720202507000},"score":1,"resource":{"primary":{"URL":"https:\/\/linkinghub.elsevier.com\/retrieve\/pii\/S002626920300051X"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2003,5]]},"references-count":7,"journal-issue":{"issue":"5-8","published-print":{"date-parts":[[2003,5]]}},"alternative-id":["S002626920300051X"],"URL":"https:\/\/doi.org\/10.1016\/s0026-2692(03)00051-x","relation":{},"ISSN":["1879-2391"],"issn-type":[{"type":"print","value":"1879-2391"}],"subject":[],"published":{"date-parts":[[2003,5]]},"assertion":[{"value":"Elsevier","name":"publisher","label":"This article is maintained by"},{"value":"Cross-sectional Scanning Probe Microscopy of GaN-based p\u2013n heterostructures","name":"articletitle","label":"Article Title"},{"value":"Microelectronics Journal","name":"journaltitle","label":"Journal Title"},{"value":"https:\/\/doi.org\/10.1016\/S0026-2692(03)00051-X","name":"articlelink","label":"CrossRef DOI link to publisher maintained version"},{"value":"converted-article","name":"content_type","label":"Content Type"},{"value":"Copyright \u00a9 2003 Elsevier Science Ltd. All rights are reserved, including those for text and data mining, AI training, and similar technologies.","name":"copyright","label":"Copyright"}]}}