{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,10,25]],"date-time":"2025-10-25T21:24:27Z","timestamp":1761427467779},"reference-count":7,"publisher":"Elsevier BV","issue":"5-8","license":[{"start":{"date-parts":[[2003,5,1]],"date-time":"2003-05-01T00:00:00Z","timestamp":1051747200000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/www.elsevier.com\/tdm\/userlicense\/1.0\/"},{"start":{"date-parts":[[2003,5,1]],"date-time":"2003-05-01T00:00:00Z","timestamp":1051747200000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/www.elsevier.com\/legal\/tdmrep-license"},{"start":{"date-parts":[[2003,5,1]],"date-time":"2003-05-01T00:00:00Z","timestamp":1051747200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-017"},{"start":{"date-parts":[[2003,5,1]],"date-time":"2003-05-01T00:00:00Z","timestamp":1051747200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"},{"start":{"date-parts":[[2003,5,1]],"date-time":"2003-05-01T00:00:00Z","timestamp":1051747200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-012"},{"start":{"date-parts":[[2003,5,1]],"date-time":"2003-05-01T00:00:00Z","timestamp":1051747200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2003,5,1]],"date-time":"2003-05-01T00:00:00Z","timestamp":1051747200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-004"}],"content-domain":{"domain":["elsevier.com","sciencedirect.com"],"crossmark-restriction":true},"short-container-title":["Microelectronics Journal"],"published-print":{"date-parts":[[2003,5]]},"DOI":"10.1016\/s0026-2692(03)00067-3","type":"journal-article","created":{"date-parts":[[2003,4,5]],"date-time":"2003-04-05T02:24:44Z","timestamp":1049509484000},"page":"435-437","update-policy":"http:\/\/dx.doi.org\/10.1016\/elsevier_cm_policy","source":"Crossref","is-referenced-by-count":12,"title":["Material and device issues of AlGaN\/GaN HEMTs on silicon substrates"],"prefix":"10.1016","volume":"34","author":[{"given":"P.","family":"Javorka","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"A.","family":"Alam","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"M.","family":"Marso","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"M.","family":"Wolter","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"J.","family":"Kuzmik","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"A.","family":"Fox","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"M.","family":"Heuken","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"P.","family":"Kordo\u0161","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"78","reference":[{"key":"10.1016\/S0026-2692(03)00067-3_BIB1","doi-asserted-by":"crossref","first-page":"420","DOI":"10.1109\/16.906430","article-title":"AlGaN\/GaN high electron mobility transistors on Si (111) substrates","volume":"48","author":"Chumbes","year":"2001","journal-title":"IEEE Trans. Electron Devices"},{"key":"10.1016\/S0026-2692(03)00067-3_BIB2","doi-asserted-by":"crossref","first-page":"288","DOI":"10.1049\/el:20020203","article-title":"AlGaN\/GaN HEMTs on silicon substrates with fT of 32\/20GHz and fmax of 27\/22GHz for 0.5\/0.7\u03bcm gate length","volume":"38","author":"Javorka","year":"2002","journal-title":"Electron. Lett."},{"key":"10.1016\/S0026-2692(03)00067-3_BIB3","doi-asserted-by":"crossref","first-page":"750","DOI":"10.1049\/el:20020522","article-title":"High-power AlGaN\/GaN HEMTs on resistive silicon substrate","volume":"38","author":"Ho\u00ebl","year":"2002","journal-title":"Electron. Lett."},{"key":"10.1016\/S0026-2692(03)00067-3_BIB4","first-page":"52","author":"Vescan","year":"2002","journal-title":"Phys. Status Solidi (c)"},{"key":"10.1016\/S0026-2692(03)00067-3_BIB5","doi-asserted-by":"crossref","first-page":"1496","DOI":"10.1109\/TED.2002.801430","article-title":"Determination of channel temperature in AlGaN\/GaN HEMTs grown on sapphire and silicon substrates using DC characterization method","volume":"49","author":"Kuzm\u0131\u0301k","year":"2002","journal-title":"IEEE Trans. Electron Devices"},{"issue":"12","key":"10.1016\/S0026-2692(03)00067-3_BIB6","doi-asserted-by":"crossref","first-page":"1321","DOI":"10.1007\/s11664-002-0115-6","article-title":"Photoionization spectroscopy of traps in AlGaN\/GaN high-electron mobility transistors","volume":"31","author":"Wolter","year":"2003","journal-title":"J. Electron. Mater."},{"key":"10.1016\/S0026-2692(03)00067-3_BIB7","doi-asserted-by":"crossref","first-page":"5498","DOI":"10.1063\/1.1510564","article-title":"Photoionization spectroscopy in AlGaN\/GaN high electron mobility transistors","volume":"92","author":"Klein","year":"2002","journal-title":"J. Appl. Phys."}],"container-title":["Microelectronics Journal"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/api.elsevier.com\/content\/article\/PII:S0026269203000673?httpAccept=text\/xml","content-type":"text\/xml","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/api.elsevier.com\/content\/article\/PII:S0026269203000673?httpAccept=text\/plain","content-type":"text\/plain","content-version":"vor","intended-application":"text-mining"}],"deposited":{"date-parts":[[2024,7,5]],"date-time":"2024-07-05T18:02:57Z","timestamp":1720202577000},"score":1,"resource":{"primary":{"URL":"https:\/\/linkinghub.elsevier.com\/retrieve\/pii\/S0026269203000673"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2003,5]]},"references-count":7,"journal-issue":{"issue":"5-8","published-print":{"date-parts":[[2003,5]]}},"alternative-id":["S0026269203000673"],"URL":"https:\/\/doi.org\/10.1016\/s0026-2692(03)00067-3","relation":{},"ISSN":["1879-2391"],"issn-type":[{"value":"1879-2391","type":"print"}],"subject":[],"published":{"date-parts":[[2003,5]]},"assertion":[{"value":"Elsevier","name":"publisher","label":"This article is maintained by"},{"value":"Material and device issues of AlGaN\/GaN HEMTs on silicon substrates","name":"articletitle","label":"Article Title"},{"value":"Microelectronics Journal","name":"journaltitle","label":"Journal Title"},{"value":"https:\/\/doi.org\/10.1016\/S0026-2692(03)00067-3","name":"articlelink","label":"CrossRef DOI link to publisher maintained version"},{"value":"converted-article","name":"content_type","label":"Content Type"},{"value":"Copyright \u00a9 2003 Elsevier Science Ltd. All rights are reserved, including those for text and data mining, AI training, and similar technologies.","name":"copyright","label":"Copyright"}]}}