{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,4,6]],"date-time":"2026-04-06T06:31:58Z","timestamp":1775457118195,"version":"3.50.1"},"reference-count":5,"publisher":"Elsevier BV","issue":"5-8","license":[{"start":{"date-parts":[[2003,5,1]],"date-time":"2003-05-01T00:00:00Z","timestamp":1051747200000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/www.elsevier.com\/tdm\/userlicense\/1.0\/"},{"start":{"date-parts":[[2003,5,1]],"date-time":"2003-05-01T00:00:00Z","timestamp":1051747200000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/www.elsevier.com\/legal\/tdmrep-license"},{"start":{"date-parts":[[2003,5,1]],"date-time":"2003-05-01T00:00:00Z","timestamp":1051747200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-017"},{"start":{"date-parts":[[2003,5,1]],"date-time":"2003-05-01T00:00:00Z","timestamp":1051747200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"},{"start":{"date-parts":[[2003,5,1]],"date-time":"2003-05-01T00:00:00Z","timestamp":1051747200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-012"},{"start":{"date-parts":[[2003,5,1]],"date-time":"2003-05-01T00:00:00Z","timestamp":1051747200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2003,5,1]],"date-time":"2003-05-01T00:00:00Z","timestamp":1051747200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-004"}],"funder":[{"DOI":"10.13039\/501100002347","name":"Bundesministerium f\u00fcr Bildung und Forschung","doi-asserted-by":"publisher","id":[{"id":"10.13039\/501100002347","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":["elsevier.com","sciencedirect.com"],"crossmark-restriction":true},"short-container-title":["Microelectronics Journal"],"published-print":{"date-parts":[[2003,5]]},"DOI":"10.1016\/s0026-2692(03)00082-x","type":"journal-article","created":{"date-parts":[[2003,4,5]],"date-time":"2003-04-05T02:24:44Z","timestamp":1049509484000},"page":"491-493","update-policy":"https:\/\/doi.org\/10.1016\/elsevier_cm_policy","source":"Crossref","is-referenced-by-count":14,"title":["High power lasers based on submonolayer InAs\u2013GaAs quantum dots and InGaAs quantum wells"],"prefix":"10.1016","volume":"34","author":[{"given":"A.R","family":"Kovsh","sequence":"first","affiliation":[]},{"given":"A.E","family":"Zhukov","sequence":"additional","affiliation":[]},{"given":"N.A","family":"Maleev","sequence":"additional","affiliation":[]},{"given":"S.S","family":"Mikhrin","sequence":"additional","affiliation":[]},{"given":"D.A","family":"Livshits","sequence":"additional","affiliation":[]},{"given":"Y.M","family":"Shernyakov","sequence":"additional","affiliation":[]},{"given":"M.V","family":"Maximov","sequence":"additional","affiliation":[]},{"given":"N.A","family":"Pihtin","sequence":"additional","affiliation":[]},{"given":"I.S","family":"Tarasov","sequence":"additional","affiliation":[]},{"given":"V.M","family":"Ustinov","sequence":"additional","affiliation":[]},{"given":"Zh.I","family":"Alferov","sequence":"additional","affiliation":[]},{"given":"J.S","family":"Wang","sequence":"additional","affiliation":[]},{"given":"L","family":"Wei","sequence":"additional","affiliation":[]},{"given":"G","family":"Lin","sequence":"additional","affiliation":[]},{"given":"J.Y","family":"Chi","sequence":"additional","affiliation":[]},{"given":"N.N","family":"Ledentsov","sequence":"additional","affiliation":[]},{"given":"D","family":"Bimberg","sequence":"additional","affiliation":[]}],"member":"78","reference":[{"key":"10.1016\/S0026-2692(03)00082-X_BIB1","doi-asserted-by":"crossref","first-page":"207","DOI":"10.1002\/1521-396X(200102)183:2<207::AID-PSSA207>3.0.CO;2-2","volume":"183","author":"Krestnikov","year":"2001","journal-title":"Phys. Status Solidi (a)"},{"key":"10.1016\/S0026-2692(03)00082-X_BIB2","doi-asserted-by":"crossref","first-page":"537","DOI":"10.1007\/s11664-999-0108-9","volume":"28","author":"Tsatsul'nikov","year":"1999","journal-title":"J. Electr. Mat."},{"key":"10.1016\/S0026-2692(03)00082-X_BIB3","doi-asserted-by":"crossref","first-page":"1061","DOI":"10.1088\/0268-1242\/15\/11\/309","volume":"15","author":"Mikhrin","year":"2000","journal-title":"Semicond. Sci. Technol."},{"key":"10.1016\/S0026-2692(03)00082-X_BIB4","doi-asserted-by":"crossref","first-page":"2542","DOI":"10.1103\/PhysRevLett.75.2542","volume":"75","author":"Xie","year":"1995","journal-title":"Phys. Rev. Lett."},{"key":"10.1016\/S0026-2692(03)00082-X_BIB5","doi-asserted-by":"crossref","first-page":"184","DOI":"10.1134\/1.1187668","volume":"33","author":"Kovsh","year":"1999","journal-title":"Semiconductors"}],"container-title":["Microelectronics Journal"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/api.elsevier.com\/content\/article\/PII:S002626920300082X?httpAccept=text\/xml","content-type":"text\/xml","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/api.elsevier.com\/content\/article\/PII:S002626920300082X?httpAccept=text\/plain","content-type":"text\/plain","content-version":"vor","intended-application":"text-mining"}],"deposited":{"date-parts":[[2024,7,5]],"date-time":"2024-07-05T18:04:03Z","timestamp":1720202643000},"score":1,"resource":{"primary":{"URL":"https:\/\/linkinghub.elsevier.com\/retrieve\/pii\/S002626920300082X"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2003,5]]},"references-count":5,"journal-issue":{"issue":"5-8","published-print":{"date-parts":[[2003,5]]}},"alternative-id":["S002626920300082X"],"URL":"https:\/\/doi.org\/10.1016\/s0026-2692(03)00082-x","relation":{},"ISSN":["1879-2391"],"issn-type":[{"value":"1879-2391","type":"print"}],"subject":[],"published":{"date-parts":[[2003,5]]},"assertion":[{"value":"Elsevier","name":"publisher","label":"This article is maintained by"},{"value":"High power lasers based on submonolayer InAs\u2013GaAs quantum dots and InGaAs quantum wells","name":"articletitle","label":"Article Title"},{"value":"Microelectronics Journal","name":"journaltitle","label":"Journal Title"},{"value":"https:\/\/doi.org\/10.1016\/S0026-2692(03)00082-X","name":"articlelink","label":"CrossRef DOI link to publisher maintained version"},{"value":"converted-article","name":"content_type","label":"Content Type"},{"value":"Copyright \u00a9 2003 Published by Elsevier Ltd.","name":"copyright","label":"Copyright"}]}}