{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,10,19]],"date-time":"2025-10-19T15:22:31Z","timestamp":1760887351284},"reference-count":5,"publisher":"Elsevier BV","issue":"4","license":[{"start":{"date-parts":[[2004,4,1]],"date-time":"2004-04-01T00:00:00Z","timestamp":1080777600000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/www.elsevier.com\/tdm\/userlicense\/1.0\/"},{"start":{"date-parts":[[2004,4,1]],"date-time":"2004-04-01T00:00:00Z","timestamp":1080777600000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/www.elsevier.com\/legal\/tdmrep-license"},{"start":{"date-parts":[[2004,4,1]],"date-time":"2004-04-01T00:00:00Z","timestamp":1080777600000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-017"},{"start":{"date-parts":[[2004,4,1]],"date-time":"2004-04-01T00:00:00Z","timestamp":1080777600000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"},{"start":{"date-parts":[[2004,4,1]],"date-time":"2004-04-01T00:00:00Z","timestamp":1080777600000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-012"},{"start":{"date-parts":[[2004,4,1]],"date-time":"2004-04-01T00:00:00Z","timestamp":1080777600000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2004,4,1]],"date-time":"2004-04-01T00:00:00Z","timestamp":1080777600000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-004"}],"content-domain":{"domain":["elsevier.com","sciencedirect.com"],"crossmark-restriction":true},"short-container-title":["Microelectronics Journal"],"published-print":{"date-parts":[[2004,4]]},"DOI":"10.1016\/s0026-2692(03)00241-6","type":"journal-article","created":{"date-parts":[[2003,9,12]],"date-time":"2003-09-12T05:11:26Z","timestamp":1063343486000},"page":"337-341","update-policy":"http:\/\/dx.doi.org\/10.1016\/elsevier_cm_policy","source":"Crossref","is-referenced-by-count":13,"title":["High-performance polycrystalline silicon thin-film transistor technology using low-temperature metal-induced unilateral crystallization"],"prefix":"10.1016","volume":"35","author":[{"given":"Man","family":"Wong","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Hoi S.","family":"Kwok","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"78","reference":[{"issue":"2","key":"10.1016\/S0026-2692(03)00241-6_BIB1","doi-asserted-by":"crossref","first-page":"404","DOI":"10.1109\/16.822287","volume":"47","author":"Meng","year":"2000","journal-title":"IEEE Transactions on Electron Devices"},{"issue":"11","key":"10.1016\/S0026-2692(03)00241-6_BIB2","first-page":"1958","volume":"44","author":"Jin","year":"1997","journal-title":"Journal of Applied Physics"},{"key":"10.1016\/S0026-2692(03)00241-6_BIB3","unstructured":"Z. Meng, T. Ma, M. Wong, Technical Digest of the IEEE International Electron Devices Meeting. December\/3\u20135\/2001, Washington DC, USA, pp. 755\u2013758."},{"issue":"4","key":"10.1016\/S0026-2692(03)00241-6_BIB4","doi-asserted-by":"crossref","first-page":"319","DOI":"10.1889\/1.1828814","volume":"9","author":"Meng","year":"2001","journal-title":"Journal of the Society for Information Display"},{"year":"2000","series-title":"Digest of Technical Papers","author":"Meng","key":"10.1016\/S0026-2692(03)00241-6_BIB5"}],"container-title":["Microelectronics Journal"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/api.elsevier.com\/content\/article\/PII:S0026269203002416?httpAccept=text\/xml","content-type":"text\/xml","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/api.elsevier.com\/content\/article\/PII:S0026269203002416?httpAccept=text\/plain","content-type":"text\/plain","content-version":"vor","intended-application":"text-mining"}],"deposited":{"date-parts":[[2024,7,8]],"date-time":"2024-07-08T18:34:56Z","timestamp":1720463696000},"score":1,"resource":{"primary":{"URL":"https:\/\/linkinghub.elsevier.com\/retrieve\/pii\/S0026269203002416"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2004,4]]},"references-count":5,"journal-issue":{"issue":"4","published-print":{"date-parts":[[2004,4]]}},"alternative-id":["S0026269203002416"],"URL":"https:\/\/doi.org\/10.1016\/s0026-2692(03)00241-6","relation":{},"ISSN":["1879-2391"],"issn-type":[{"type":"print","value":"1879-2391"}],"subject":[],"published":{"date-parts":[[2004,4]]},"assertion":[{"value":"Elsevier","name":"publisher","label":"This article is maintained by"},{"value":"High-performance polycrystalline silicon thin-film transistor technology using low-temperature metal-induced unilateral crystallization","name":"articletitle","label":"Article Title"},{"value":"Microelectronics Journal","name":"journaltitle","label":"Journal Title"},{"value":"https:\/\/doi.org\/10.1016\/S0026-2692(03)00241-6","name":"articlelink","label":"CrossRef DOI link to publisher maintained version"},{"value":"converted-article","name":"content_type","label":"Content Type"},{"value":"Copyright \u00a9 2003 Elsevier Science Ltd. All rights are reserved, including those for text and data mining, AI training, and similar technologies.","name":"copyright","label":"Copyright"}]}}