{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,9,21]],"date-time":"2025-09-21T11:23:29Z","timestamp":1758453809520,"version":"3.44.0"},"reference-count":103,"publisher":"Elsevier BV","issue":"1","license":[{"start":{"date-parts":[[2001,1,1]],"date-time":"2001-01-01T00:00:00Z","timestamp":978307200000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/www.elsevier.com\/tdm\/userlicense\/1.0\/"},{"start":{"date-parts":[[2001,1,1]],"date-time":"2001-01-01T00:00:00Z","timestamp":978307200000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/www.elsevier.com\/legal\/tdmrep-license"}],"content-domain":{"domain":["elsevier.com","sciencedirect.com"],"crossmark-restriction":true},"short-container-title":["Microelectronics Reliability"],"published-print":{"date-parts":[[2001,1]]},"DOI":"10.1016\/s0026-2714(00)00206-7","type":"journal-article","created":{"date-parts":[[2002,7,25]],"date-time":"2002-07-25T13:31:48Z","timestamp":1027603908000},"page":"21-30","update-policy":"https:\/\/doi.org\/10.1016\/elsevier_cm_policy","source":"Crossref","is-referenced-by-count":25,"title":["Reliability physics of compound semiconductor transistors for microwave applications"],"prefix":"10.1016","volume":"41","author":[{"given":"M","family":"Borgarino","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"R","family":"Menozzi","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"D","family":"Dieci","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"L","family":"Cattani","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"F","family":"Fantini","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"78","reference":[{"key":"10.1016\/S0026-2714(00)00206-7_BIB1","doi-asserted-by":"crossref","first-page":"1559","DOI":"10.1016\/0026-2714(92)90456-U","volume":"32","author":"Fantini","year":"1992","journal-title":"Microelectron Reliab"},{"key":"10.1016\/S0026-2714(00)00206-7_BIB2","doi-asserted-by":"crossref","first-page":"1053","DOI":"10.1088\/0268-1242\/13\/10\/001","volume":"13","author":"Menozzi","year":"1998","journal-title":"Semicond Sci Technol"},{"key":"10.1016\/S0026-2714(00)00206-7_BIB3","doi-asserted-by":"crossref","first-page":"498","DOI":"10.1109\/16.199353","volume":"40","author":"Canali","year":"1993","journal-title":"IEEE Trans Electron Dev"},{"key":"10.1016\/S0026-2714(00)00206-7_BIB4","doi-asserted-by":"crossref","first-page":"149","DOI":"10.1109\/55.830964","volume":"21","author":"Di","year":"2000","journal-title":"IEEE Electron Dev Lett"},{"key":"10.1016\/S0026-2714(00)00206-7_BIB5","doi-asserted-by":"crossref","first-page":"1325","DOI":"10.1016\/S0038-1101(99)00070-2","volume":"43","author":"Hwang","year":"1999","journal-title":"Solid-State Electron"},{"key":"10.1016\/S0026-2714(00)00206-7_BIB6","doi-asserted-by":"crossref","first-page":"498","DOI":"10.1109\/16.824715","volume":"47","author":"Leoni","year":"2000","journal-title":"IEEE Trans Electron Dev"},{"key":"10.1016\/S0026-2714(00)00206-7_BIB7","first-page":"205","volume":"33","author":"Canali","year":"1995","journal-title":"Proc IEEE Reliab Phys"},{"key":"10.1016\/S0026-2714(00)00206-7_BIB8","doi-asserted-by":"crossref","first-page":"543","DOI":"10.1109\/16.485535","volume":"43","author":"Menozzi","year":"1996","journal-title":"IEEE Trans Electron Dev"},{"key":"10.1016\/S0026-2714(00)00206-7_BIB9","unstructured":"Chou YC, Li GP, Yu KK, Wu CS, Chu P, Hou LD, Midford TA. Proc IEEE GaAs Integrated Circuits Symp, 1996. p. 42\u20135"},{"key":"10.1016\/S0026-2714(00)00206-7_BIB10","unstructured":"Rohdin H, Su C, Moll N, Wakita A, Nagy A, Robbins VM, Kauffman M. Proc Int Conf Indium Phosphide and Related Materials, 1997. p. 357\u201360"},{"key":"10.1016\/S0026-2714(00)00206-7_BIB11","doi-asserted-by":"crossref","first-page":"1759","DOI":"10.1016\/S0026-2714(99)00182-1","volume":"39","author":"Meneghesso","year":"1999","journal-title":"Microelectron Reliab"},{"key":"10.1016\/S0026-2714(00)00206-7_BIB12","unstructured":"Hasegawa H, Katsukawa K, Itoh T, Noguchi T, Kaneko Y. IEEE MTT-S Digest 1993:289\u201392"},{"key":"10.1016\/S0026-2714(00)00206-7_BIB13","unstructured":"Tkachenko YA, Lan Y, Whitefield DS, Wei CJ, Hwang JCM. Proc GaAs Reliab Workshop, 1993"},{"key":"10.1016\/S0026-2714(00)00206-7_BIB14","unstructured":"Christianson KA, Anderson WT, Moglestue C. Proc GaAs Reliab Workshop, 1994"},{"key":"10.1016\/S0026-2714(00)00206-7_BIB15","unstructured":"Tkachenko YA, Wei CJ, Hwang JCM, Harris TD, Grober RD, Hwang DM, Aucoin L, Shanfield S, Proc IEEE Microwave Millimeter Wave Monolithic Circuits Symp, 1995. p. 115\u20138"},{"key":"10.1016\/S0026-2714(00)00206-7_BIB16","doi-asserted-by":"crossref","first-page":"1651","DOI":"10.1016\/S0026-2714(97)00131-5","volume":"37","author":"Muraro","year":"1997","journal-title":"Microelectron Reliab"},{"key":"10.1016\/S0026-2714(00)00206-7_BIB17","unstructured":"Leoni RE, Hwang JCM. Proc IEEE GaAs Integrated Circuits Symp, 1996. p. 31\u20133"},{"key":"10.1016\/S0026-2714(00)00206-7_BIB18","doi-asserted-by":"crossref","first-page":"1411","DOI":"10.1063\/1.117598","volume":"69","author":"Meneghesso","year":"1996","journal-title":"Appl Phys Lett"},{"key":"10.1016\/S0026-2714(00)00206-7_BIB19","doi-asserted-by":"crossref","first-page":"313","DOI":"10.1049\/el:19900206","volume":"26","author":"Canali","year":"1990","journal-title":"Electron Lett"},{"key":"10.1016\/S0026-2714(00)00206-7_BIB20","unstructured":"Menozzi R, Borgarino M, Cova P, Baeyens Y, Pavesi M, Fantini F. Proc GaAs Reliab Workshop, 1996, p. 18\u201321"},{"key":"10.1016\/S0026-2714(00)00206-7_BIB21","doi-asserted-by":"crossref","first-page":"1899","DOI":"10.1016\/0026-2714(96)00224-7","volume":"36","author":"Menozzi","year":"1996","journal-title":"Microelectron Reliab"},{"key":"10.1016\/S0026-2714(00)00206-7_BIB22","doi-asserted-by":"crossref","first-page":"366","DOI":"10.1109\/16.658668","volume":"45","author":"Borgarino","year":"1998","journal-title":"IEEE Trans Electron Dev"},{"key":"10.1016\/S0026-2714(00)00206-7_BIB23","doi-asserted-by":"crossref","first-page":"232","DOI":"10.1109\/55.491839","volume":"17","author":"Meneghesso","year":"1995","journal-title":"IEEE Electron Dev Lett"},{"key":"10.1016\/S0026-2714(00)00206-7_BIB24","unstructured":"Chou YC, Li GP, Chen YC, Wu CS, Midford TA, Yu KK, Cisco TC. Proc GaAs Reliab Workshop, 1995"},{"key":"10.1016\/S0026-2714(00)00206-7_BIB25","unstructured":"Chou YC, Li GP, Yu KK, Chu P, Hou LD, Wu CS, Midford TA. Proc GaAs Integrated Circuits Symp, 1996. p. 46\u20139"},{"key":"10.1016\/S0026-2714(00)00206-7_BIB26","doi-asserted-by":"crossref","first-page":"1895","DOI":"10.1016\/0026-2714(96)00223-5","volume":"36","author":"Meneghesso","year":"1996","journal-title":"Microelectron Reliab"},{"key":"10.1016\/S0026-2714(00)00206-7_BIB27","first-page":"169","volume":"95","author":"Meneghesso","year":"1995","journal-title":"Proc ESSDERC"},{"key":"10.1016\/S0026-2714(00)00206-7_BIB28","doi-asserted-by":"crossref","first-page":"261","DOI":"10.1109\/16.822265","volume":"47","author":"Dieci","year":"2000","journal-title":"IEEE Trans Electron Dev"},{"key":"10.1016\/S0026-2714(00)00206-7_BIB29","doi-asserted-by":"crossref","first-page":"R1","DOI":"10.1063\/1.345628","volume":"67","author":"Mooney","year":"1990","journal-title":"J Appl Phys"},{"key":"10.1016\/S0026-2714(00)00206-7_BIB30","doi-asserted-by":"crossref","first-page":"135","DOI":"10.4028\/www.scientific.net\/DDF.108.135","volume":"108","author":"Munoz","year":"1994","journal-title":"Defect Diffus Forum"},{"key":"10.1016\/S0026-2714(00)00206-7_BIB31","doi-asserted-by":"crossref","first-page":"2261","DOI":"10.1109\/16.726636","volume":"45","author":"Menozzi","year":"1998","journal-title":"IEEE Trans Electron Dev"},{"key":"10.1016\/S0026-2714(00)00206-7_BIB32","first-page":"1009","volume":"96","author":"Menozzi","year":"1996","journal-title":"Proc ESSDERC"},{"key":"10.1016\/S0026-2714(00)00206-7_BIB33","doi-asserted-by":"crossref","first-page":"3","DOI":"10.1109\/75.553702","volume":"7","author":"Menozzi","year":"1997","journal-title":"IEEE Microwave Guided Wave Lett"},{"key":"10.1016\/S0026-2714(00)00206-7_BIB34","unstructured":"Wakita AS, Rohdin H, Su C-Y, Moll N, Nagy A, Robbins VM. Proc Int Conf Indium Phosphide and Related Materials, 1997. p. 376\u20139"},{"key":"10.1016\/S0026-2714(00)00206-7_BIB35","unstructured":"Menozzi R, Borgarino M, Baeyens Y, van der Zanden K, Van Hove K, Fantini F. Proc Int Conf On Indium Phosphide and Related Materials, 1997. p. 153\u20136"},{"key":"10.1016\/S0026-2714(00)00206-7_BIB36","first-page":"803","volume":"94","author":"Baeyens","year":"1994","journal-title":"Proc ESSDERC"},{"key":"10.1016\/S0026-2714(00)00206-7_BIB37","unstructured":"Meneghesso G, Luise R, Buttari D, Chini A, Yokoyama H, Suemitsu T, Zanoni E. ESREF Conference, 2000"},{"key":"10.1016\/S0026-2714(00)00206-7_BIB38","doi-asserted-by":"crossref","first-page":"1911","DOI":"10.1016\/0026-2714(96)00227-2","volume":"36","author":"Schreurs","year":"1996","journal-title":"Microelectron Reliab"},{"key":"10.1016\/S0026-2714(00)00206-7_BIB39","doi-asserted-by":"crossref","first-page":"15","DOI":"10.1109\/16.370041","volume":"42","author":"Bahl","year":"1994","journal-title":"IEEE Trans Electron Dev"},{"key":"10.1016\/S0026-2714(00)00206-7_BIB40","unstructured":"Rohdin H, Su C, Moll N, Wakita A, Nagy A, Robbins V, Kauffman M. Int Conf On Indium Phosphide and Related Materials, 1997. p. 357\u201360"},{"key":"10.1016\/S0026-2714(00)00206-7_BIB41","unstructured":"del Alamo JA, Somerville MH, Blanchard RR. GaAs 98, 1998. p. 187\u201392"},{"key":"10.1016\/S0026-2714(00)00206-7_BIB42","doi-asserted-by":"crossref","first-page":"152","DOI":"10.1109\/55.753750","volume":"20","author":"Menozzi","year":"1999","journal-title":"IEEE Electron Dev Lett"},{"key":"10.1016\/S0026-2714(00)00206-7_BIB43","doi-asserted-by":"crossref","first-page":"1570","DOI":"10.1109\/16.777143","volume":"46","author":"van der Zanden","year":"1999","journal-title":"IEEE Trans Electron Dev"},{"key":"10.1016\/S0026-2714(00)00206-7_BIB44","doi-asserted-by":"crossref","first-page":"1204","DOI":"10.1109\/4.782077","volume":"34","author":"del Alamo","year":"1999","journal-title":"IEEE J Solid-State Circuits"},{"key":"10.1016\/S0026-2714(00)00206-7_BIB45","unstructured":"Kayali S. GaAs Reliab Workshop, 1995. p. 32\u20134"},{"key":"10.1016\/S0026-2714(00)00206-7_BIB46","unstructured":"Kayali S. NASA report 323-79-2N, 1997"},{"key":"10.1016\/S0026-2714(00)00206-7_BIB47","unstructured":"Delaney MJ, Wiltsey TJ, Chiang MW, Yu KK. GaAs Reliab Workshop, 1994"},{"key":"10.1016\/S0026-2714(00)00206-7_BIB48","unstructured":"Adams SB, MacDonald JA, Hu WW, Immorlica AA, Reisinger AR, Smith FW. GaAs Reliab Workshop, 1994"},{"key":"10.1016\/S0026-2714(00)00206-7_BIB49","doi-asserted-by":"crossref","first-page":"749","DOI":"10.1016\/S0038-1101(97)00292-X","volume":"42","author":"Ren","year":"1998","journal-title":"Solid-State Electron"},{"key":"10.1016\/S0026-2714(00)00206-7_BIB50","doi-asserted-by":"crossref","first-page":"151","DOI":"10.1109\/55.291603","volume":"15","author":"Chao","year":"1994","journal-title":"IEEE Electron Dev Lett"},{"key":"10.1016\/S0026-2714(00)00206-7_BIB51","doi-asserted-by":"crossref","first-page":"441","DOI":"10.1109\/55.622523","volume":"18","author":"Chao","year":"1997","journal-title":"IEEE Electron Dev Lett"},{"key":"10.1016\/S0026-2714(00)00206-7_BIB52","unstructured":"Camp WO Jr, Lasater R, Genova V, Hume R. GaAs Integrated Circuits Symp, 1989. p. 203\u20136"},{"key":"10.1016\/S0026-2714(00)00206-7_BIB53","doi-asserted-by":"crossref","first-page":"108","DOI":"10.1063\/1.96284","volume":"47","author":"Chevallier","year":"1985","journal-title":"Appl Phys Lett"},{"key":"10.1016\/S0026-2714(00)00206-7_BIB54","doi-asserted-by":"crossref","first-page":"393","DOI":"10.1109\/55.778153","volume":"20","author":"Blanchard","year":"1999","journal-title":"IEEE Electron Dev Lett"},{"key":"10.1016\/S0026-2714(00)00206-7_BIB55","doi-asserted-by":"crossref","first-page":"1377","DOI":"10.1109\/T-ED.1984.21719","volume":"ED-31","author":"Asbeck","year":"1984","journal-title":"IEEE Trans Electron Dev"},{"key":"10.1016\/S0026-2714(00)00206-7_BIB56","unstructured":"Gaddi R, Menozzi R, Dieci D, Lanzieri C, Meneghesso G, Canali C, Zanoni E. Proc IEEE-IRPS, 1999. p. 110\u20135"},{"key":"10.1016\/S0026-2714(00)00206-7_BIB57","doi-asserted-by":"crossref","first-page":"97","DOI":"10.1109\/55.823568","volume":"21","author":"Chertouk","year":"2000","journal-title":"IEEE Electron Dev Lett"},{"key":"10.1016\/S0026-2714(00)00206-7_BIB58","doi-asserted-by":"crossref","first-page":"497","DOI":"10.1016\/S0026-2714(97)00050-4","volume":"38","author":"Meneghesso","year":"1998","journal-title":"Microelectron Reliab"},{"key":"10.1016\/S0026-2714(00)00206-7_BIB59","doi-asserted-by":"crossref","first-page":"1227","DOI":"10.1016\/S0026-2714(98)00092-4","volume":"38","author":"Meneghesso","year":"1998","journal-title":"Microelectron Reliab"},{"key":"10.1016\/S0026-2714(00)00206-7_BIB60","doi-asserted-by":"crossref","first-page":"185","DOI":"10.1109\/EDL.1986.26338","volume":"7","author":"Canali","year":"1986","journal-title":"IEEE Electron Dev Lett"},{"key":"10.1016\/S0026-2714(00)00206-7_BIB61","first-page":"385","volume":"2","author":"Magistrali","year":"1991","journal-title":"Proc ESREF"},{"key":"10.1016\/S0026-2714(00)00206-7_BIB62","unstructured":"Morgan DV, Wood J. In: Christou A, editor. Reliability of GaAs MMIC. New York: Wiley; 1992. p. 389\u2013410"},{"key":"10.1016\/S0026-2714(00)00206-7_BIB63","doi-asserted-by":"crossref","first-page":"1305","DOI":"10.1016\/0038-1101(96)00041-X","volume":"39","author":"Borgarino","year":"1996","journal-title":"Solid-State Electron"},{"key":"10.1016\/S0026-2714(00)00206-7_BIB64","unstructured":"Fantini F, Borgarino M, Cattani L, Menozzi R. EDMO, 1998. p. 119\u201324"},{"key":"10.1016\/S0026-2714(00)00206-7_BIB65","doi-asserted-by":"crossref","first-page":"140","DOI":"10.1109\/55.144990","volume":"13","author":"Hafizi","year":"1992","journal-title":"IEEE Electron Dev Lett"},{"key":"10.1016\/S0026-2714(00)00206-7_BIB66","unstructured":"Yamada FM, Oki AK, Streit DC, Saito Y, Umemoto DK, Tran LT, Bui S, Velebir JR, .McIver W. Proc MTT Symp, 1992. p. 739\u201342"},{"key":"10.1016\/S0026-2714(00)00206-7_BIB67","doi-asserted-by":"crossref","first-page":"2343","DOI":"10.1143\/JJAP.31.2343","volume":"31","author":"Nakajima","year":"1992","journal-title":"Jpn J Appl Phys"},{"key":"10.1016\/S0026-2714(00)00206-7_BIB68","doi-asserted-by":"crossref","first-page":"2015","DOI":"10.1063\/1.105025","volume":"58","author":"Uematsu","year":"1991","journal-title":"Appl Phys Lett"},{"key":"10.1016\/S0026-2714(00)00206-7_BIB69","doi-asserted-by":"crossref","first-page":"1391","DOI":"10.1016\/0038-1101(78)90215-0","volume":"21","author":"Kimerling","year":"1978","journal-title":"Solid-State Electron"},{"key":"10.1016\/S0026-2714(00)00206-7_BIB70","doi-asserted-by":"crossref","first-page":"3004","DOI":"10.1088\/0022-3727\/31\/21\/004","volume":"31","author":"Borgarino","year":"1998","journal-title":"J Phys D: Appl Phys"},{"key":"10.1016\/S0026-2714(00)00206-7_BIB71","doi-asserted-by":"crossref","first-page":"809","DOI":"10.1109\/16.753721","volume":"46","author":"Wang","year":"1999","journal-title":"IEEE Trans Electron Dev"},{"key":"10.1016\/S0026-2714(00)00206-7_BIB72","unstructured":"Streit D. EDMO, 1998. p. 111\u20138"},{"key":"10.1016\/S0026-2714(00)00206-7_BIB73","doi-asserted-by":"crossref","first-page":"420","DOI":"10.1016\/0022-0248(94)91086-3","volume":"145","author":"Fushimi","year":"1994","journal-title":"J Cristal Growth"},{"key":"10.1016\/S0026-2714(00)00206-7_BIB74","unstructured":"Hartmann QJ, Fresina MT, Ahamri DA, Stockman SA, Baker JE, Barlage D, Hwangbo H, Yung A, Feng M, Stillman GE. IPRM, 1997. p. 505\u20138"},{"key":"10.1016\/S0026-2714(00)00206-7_BIB75","doi-asserted-by":"crossref","unstructured":"Fushimi H, Wada K. IRPS, 1996, p. 214\u201320","DOI":"10.1109\/RELPHY.1996.492122"},{"key":"10.1016\/S0026-2714(00)00206-7_BIB76","doi-asserted-by":"crossref","first-page":"2057","DOI":"10.1016\/S0038-1101(98)00169-5","volume":"42","author":"Kawano","year":"1998","journal-title":"Solid-State Electron"},{"key":"10.1016\/S0026-2714(00)00206-7_BIB77","doi-asserted-by":"crossref","first-page":"10","DOI":"10.1109\/16.737435","volume":"46","author":"Borgarino","year":"1999","journal-title":"IEEE Trans Electron Dev"},{"key":"10.1016\/S0026-2714(00)00206-7_BIB78","unstructured":"Henderson T, Ley V, Kim T, Moise T, Hill D. IEDM, 1996. p. 203\u20136"},{"key":"10.1016\/S0026-2714(00)00206-7_BIB79","doi-asserted-by":"crossref","first-page":"1823","DOI":"10.1016\/S0026-2714(99)00191-2","volume":"39","author":"Borgarino","year":"1999","journal-title":"Microelectron Reliab"},{"key":"10.1016\/S0026-2714(00)00206-7_BIB80","doi-asserted-by":"crossref","first-page":"408","DOI":"10.1109\/55.728895","volume":"19","author":"Chi","year":"1998","journal-title":"IEEE Electron Dev Lett"},{"key":"10.1016\/S0026-2714(00)00206-7_BIB81","doi-asserted-by":"crossref","first-page":"257","DOI":"10.1016\/0921-5107(94)90059-0","volume":"B28","author":"Ishibashi","year":"1994","journal-title":"Mat Sci Engng"},{"key":"10.1016\/S0026-2714(00)00206-7_BIB82","unstructured":"Rusani A, Kuchenbecker J, Borgarino M, Plana R, Graffeuil J, Vanzi M. EDMO, 1999. p. 260\u20135"},{"key":"10.1016\/S0026-2714(00)00206-7_BIB83","doi-asserted-by":"crossref","first-page":"469","DOI":"10.1109\/55.735749","volume":"19","author":"Bovolon","year":"1998","journal-title":"IEEE Electron Dev Lett"},{"key":"10.1016\/S0026-2714(00)00206-7_BIB84","unstructured":"Henderson T, Tutt M. IRPS, 1997. p. 253\u201360"},{"key":"10.1016\/S0026-2714(00)00206-7_BIB85","unstructured":"Borgarino M, Plana R, Tartarin JG, Graffeuil J, Fantini F, Delage S. ESSDERC, 1998"},{"key":"10.1016\/S0026-2714(00)00206-7_BIB86","doi-asserted-by":"crossref","first-page":"274","DOI":"10.1109\/16.822267","volume":"47","author":"Bovolon","year":"2000","journal-title":"IEEE Trans Electron Dev"},{"key":"10.1016\/S0026-2714(00)00206-7_BIB87","unstructured":"Henderson T, Kim TS. GaAs IC Symp, 1996. p. 27"},{"key":"10.1016\/S0026-2714(00)00206-7_BIB88","doi-asserted-by":"crossref","first-page":"3168","DOI":"10.1088\/0022-3727\/31\/21\/024","volume":"31","author":"Wang","year":"1998","journal-title":"J Phys D: Appl Phys"},{"key":"10.1016\/S0026-2714(00)00206-7_BIB89","unstructured":"Harris M, Wagner B, Holpern S, Dobbs M, Pagel C, Stuffle B, Henderson J, Johnson K. IRPS, 1999. p. 121\u20137"},{"key":"10.1016\/S0026-2714(00)00206-7_BIB90","doi-asserted-by":"crossref","first-page":"381","DOI":"10.1142\/S0129156494000164","volume":"5","author":"Sugahara","year":"1994","journal-title":"Int J High Speed Electron Syst"},{"key":"10.1016\/S0026-2714(00)00206-7_BIB91","doi-asserted-by":"crossref","first-page":"982","DOI":"10.1063\/1.116119","volume":"68","author":"Hartmann","year":"1996","journal-title":"Appl Phys Lett"},{"key":"10.1016\/S0026-2714(00)00206-7_BIB92","doi-asserted-by":"crossref","first-page":"1643","DOI":"10.1016\/S0026-2714(97)00130-3","volume":"37","author":"Liou","year":"1997","journal-title":"Microelectron Reliab"},{"key":"10.1016\/S0026-2714(00)00206-7_BIB93","unstructured":"Chen WL, Kim TS, Chau HF, Henderson T. IPRM, 1997. p. 361\u20134"},{"key":"10.1016\/S0026-2714(00)00206-7_BIB94","first-page":"503","volume":"160","author":"Fantini","year":"1997","journal-title":"Inst Phys Conf Ser"},{"key":"10.1016\/S0026-2714(00)00206-7_BIB95","doi-asserted-by":"crossref","first-page":"L558","DOI":"10.1143\/JJAP.30.L558","volume":"30","author":"Okada","year":"1991","journal-title":"Jpn J Appl Phys"},{"key":"10.1016\/S0026-2714(00)00206-7_BIB96","doi-asserted-by":"crossref","first-page":"62","DOI":"10.1109\/55.484124","volume":"17","author":"Chor","year":"1996","journal-title":"IEEE Electron Dev Lett"},{"key":"10.1016\/S0026-2714(00)00206-7_BIB97","unstructured":"Rezazadeh AA, Bashar SA, Sheng H, Amin FA, Cattani L, Liou JJ. IRPS, 2000. p. 250\u20137"},{"key":"10.1016\/S0026-2714(00)00206-7_BIB98","doi-asserted-by":"crossref","first-page":"2000","DOI":"10.1016\/S0026-2714(99)00217-6","volume":"40","author":"Vendrame","year":"2000","journal-title":"Microelectron Reliab"},{"key":"10.1016\/S0026-2714(00)00206-7_BIB99","unstructured":"Babcock JA, Cressler JD, Vempati LS, Joseph AJ, Harame DL. IEDM, 1995"},{"key":"10.1016\/S0026-2714(00)00206-7_BIB100","doi-asserted-by":"crossref","first-page":"1440","DOI":"10.1109\/16.848289","volume":"47","author":"Gogineni","year":"2000","journal-title":"IEEE Trans Electron Dev"},{"key":"10.1016\/S0026-2714(00)00206-7_BIB101","doi-asserted-by":"crossref","first-page":"1286","DOI":"10.1109\/16.506781","volume":"43","author":"Neugroschel","year":"1996","journal-title":"IEEE Electron Dev Lett"},{"key":"10.1016\/S0026-2714(00)00206-7_BIB102","doi-asserted-by":"crossref","first-page":"1804","DOI":"10.1109\/23.819157","volume":"46","author":"Kerns","year":"1999","journal-title":"IEEE Trans Nucl Sci"},{"key":"10.1016\/S0026-2714(00)00206-7_BIB103","unstructured":"Kuchenbecker J, Borgarino M, Coustou A, Plana R, Graffeuil J, Fantini F. ESREF, 2000"}],"container-title":["Microelectronics Reliability"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/api.elsevier.com\/content\/article\/PII:S0026271400002067?httpAccept=text\/xml","content-type":"text\/xml","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/api.elsevier.com\/content\/article\/PII:S0026271400002067?httpAccept=text\/plain","content-type":"text\/plain","content-version":"vor","intended-application":"text-mining"}],"deposited":{"date-parts":[[2025,9,21]],"date-time":"2025-09-21T05:23:52Z","timestamp":1758432232000},"score":1,"resource":{"primary":{"URL":"https:\/\/linkinghub.elsevier.com\/retrieve\/pii\/S0026271400002067"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2001,1]]},"references-count":103,"journal-issue":{"issue":"1","published-print":{"date-parts":[[2001,1]]}},"alternative-id":["S0026271400002067"],"URL":"https:\/\/doi.org\/10.1016\/s0026-2714(00)00206-7","relation":{},"ISSN":["0026-2714"],"issn-type":[{"type":"print","value":"0026-2714"}],"subject":[],"published":{"date-parts":[[2001,1]]},"assertion":[{"value":"Elsevier","name":"publisher","label":"This article is maintained by"},{"value":"Reliability physics of compound semiconductor transistors for microwave applications","name":"articletitle","label":"Article Title"},{"value":"Microelectronics Reliability","name":"journaltitle","label":"Journal Title"},{"value":"https:\/\/doi.org\/10.1016\/S0026-2714(00)00206-7","name":"articlelink","label":"CrossRef DOI link to publisher maintained version"},{"value":"converted-article","name":"content_type","label":"Content Type"},{"value":"Copyright \u00a9 2001 Elsevier Science Ltd. All rights reserved.","name":"copyright","label":"Copyright"}]}}