{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,12,4]],"date-time":"2024-12-04T05:31:47Z","timestamp":1733290307066,"version":"3.30.1"},"reference-count":8,"publisher":"Elsevier BV","issue":"3","license":[{"start":{"date-parts":[[2001,3,1]],"date-time":"2001-03-01T00:00:00Z","timestamp":983404800000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/www.elsevier.com\/tdm\/userlicense\/1.0\/"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Microelectronics Reliability"],"published-print":{"date-parts":[[2001,3]]},"DOI":"10.1016\/s0026-2714(00)00243-2","type":"journal-article","created":{"date-parts":[[2002,10,14]],"date-time":"2002-10-14T22:58:33Z","timestamp":1034636313000},"page":"375-383","source":"Crossref","is-referenced-by-count":2,"title":["Influence of gate length on ESD-performance for deep submicron CMOS technology"],"prefix":"10.1016","volume":"41","author":[{"given":"K.","family":"Bock","sequence":"first","affiliation":[]},{"given":"B.","family":"Keppens","sequence":"additional","affiliation":[]},{"given":"V.De","family":"Heyn","sequence":"additional","affiliation":[]},{"given":"G.","family":"Groeseneken","sequence":"additional","affiliation":[]},{"given":"L.Y.","family":"Ching","sequence":"additional","affiliation":[]},{"given":"A.","family":"Naem","sequence":"additional","affiliation":[]}],"member":"78","reference":[{"key":"10.1016\/S0026-2714(00)00243-2_BIB1","unstructured":"Amerasekera A, Duvvury C. ESD in silicon integrated circuits.New York: Wiley; ISBN 0471954810, 1995"},{"key":"10.1016\/S0026-2714(00)00243-2_BIB2","unstructured":"Gupta V, Amerasekera A, Ramaswamy S, Tsao A. EOS\/ESD Symp 1998. p. 161"},{"key":"10.1016\/S0026-2714(00)00243-2_BIB3","unstructured":"Notermans G, de Jong P, Kuper F. EOS\/ESD Symp 1998. p. 17"},{"key":"10.1016\/S0026-2714(00)00243-2_BIB4","doi-asserted-by":"crossref","first-page":"2161","DOI":"10.1109\/16.83744","volume":"38","author":"Amerasekera","year":"1991","journal-title":"IEEE Trans El Dev"},{"key":"10.1016\/S0026-2714(00)00243-2_BIB5","doi-asserted-by":"crossref","unstructured":"Amerasekera A, McNeil V, Rodder M. IEDM Tech Dig 1996;893","DOI":"10.1109\/IEDM.1996.554123"},{"key":"10.1016\/S0026-2714(00)00243-2_BIB6","doi-asserted-by":"crossref","unstructured":"Stadler W, Guggenmos X, Egger P, Gieser H, Musshoff C. EOS\/ESD Symp 1997. p. 366","DOI":"10.1109\/EOSESD.1997.634264"},{"key":"10.1016\/S0026-2714(00)00243-2_BIB7","doi-asserted-by":"crossref","unstructured":"Bock K, Russ C, Badenes G, Groeseneken G, Deferm L. EOS\/ESD Symp 1997. p. 308","DOI":"10.1109\/EOSESD.1997.634258"},{"key":"10.1016\/S0026-2714(00)00243-2_BIB8","doi-asserted-by":"crossref","first-page":"997","DOI":"10.1016\/S0026-2714(98)00148-6","volume":"38","author":"Bock","year":"1998","journal-title":"Microelectron Reliab"}],"container-title":["Microelectronics Reliability"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/api.elsevier.com\/content\/article\/PII:S0026271400002432?httpAccept=text\/xml","content-type":"text\/xml","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/api.elsevier.com\/content\/article\/PII:S0026271400002432?httpAccept=text\/plain","content-type":"text\/plain","content-version":"vor","intended-application":"text-mining"}],"deposited":{"date-parts":[[2024,12,4]],"date-time":"2024-12-04T03:28:28Z","timestamp":1733282908000},"score":1,"resource":{"primary":{"URL":"https:\/\/linkinghub.elsevier.com\/retrieve\/pii\/S0026271400002432"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2001,3]]},"references-count":8,"journal-issue":{"issue":"3","published-print":{"date-parts":[[2001,3]]}},"alternative-id":["S0026271400002432"],"URL":"https:\/\/doi.org\/10.1016\/s0026-2714(00)00243-2","relation":{},"ISSN":["0026-2714"],"issn-type":[{"type":"print","value":"0026-2714"}],"subject":[],"published":{"date-parts":[[2001,3]]}}}