{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,6,22]],"date-time":"2024-06-22T16:35:49Z","timestamp":1719074149725},"reference-count":15,"publisher":"Elsevier BV","issue":"4","license":[{"start":{"date-parts":[[2001,4,1]],"date-time":"2001-04-01T00:00:00Z","timestamp":986083200000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/www.elsevier.com\/tdm\/userlicense\/1.0\/"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Microelectronics Reliability"],"published-print":{"date-parts":[[2001,4]]},"DOI":"10.1016\/s0026-2714(00)00249-3","type":"journal-article","created":{"date-parts":[[2002,7,25]],"date-time":"2002-07-25T10:37:42Z","timestamp":1027593462000},"page":"571-578","source":"Crossref","is-referenced-by-count":6,"title":["Thermal modeling of single event burnout failure in semiconductor power devices"],"prefix":"10.1016","volume":"41","author":[{"given":"D.G.","family":"Walker","sequence":"first","affiliation":[]},{"given":"T.S.","family":"Fisher","sequence":"additional","affiliation":[]},{"given":"J.","family":"Liu","sequence":"additional","affiliation":[]},{"given":"R.D.","family":"Schrimpf","sequence":"additional","affiliation":[]}],"member":"78","reference":[{"key":"10.1016\/S0026-2714(00)00249-3_BIB1","doi-asserted-by":"crossref","first-page":"1710","DOI":"10.1109\/TNS.1986.4334670","article-title":"Burnout of power MOS transistors with heavy ions of 252-Cf","volume":"33","author":"Waskiewicz","year":"1986","journal-title":"IEEE Trans Nucl Sci"},{"key":"10.1016\/S0026-2714(00)00249-3_BIB2","series-title":"Ionizing radiation effects in MOS devices and circuits","author":"Ma","year":"1989"},{"issue":"6","key":"10.1016\/S0026-2714(00)00249-3_BIB3","doi-asserted-by":"crossref","first-page":"2260","DOI":"10.1109\/23.45433","article-title":"Features of the triggering mechanism for single event burnout of power MOSFETs","volume":"36","author":"Hohl","year":"1989","journal-title":"IEEE Trans Nucl Sci"},{"issue":"6","key":"10.1016\/S0026-2714(00)00249-3_BIB4","doi-asserted-by":"crossref","first-page":"1275","DOI":"10.1109\/TNS.1987.4337465","article-title":"Analytical model for single event burnout of power MOSFETs","volume":"34","author":"Hohl","year":"1987","journal-title":"IEEE Trans Nucl Sci"},{"key":"10.1016\/S0026-2714(00)00249-3_BIB5","doi-asserted-by":"crossref","first-page":"546","DOI":"10.1109\/23.490900","article-title":"A review of the techniques used for modeling single-event effects in power MOSFETs","volume":"43","author":"Johnson","year":"1996","journal-title":"IEEE Trans Nucl Sci"},{"issue":"5","key":"10.1016\/S0026-2714(00)00249-3_BIB6","doi-asserted-by":"crossref","first-page":"1001","DOI":"10.1109\/16.210211","article-title":"Simulating single-event burnout of n-channel power MOSFET's","volume":"40","author":"Johnson","year":"1993","journal-title":"IEEE Trans Electron Dev"},{"key":"10.1016\/S0026-2714(00)00249-3_BIB7","unstructured":"Liu J. Modeling of single event burnout in n-channel power MOSFETs. Master\u2019s Thesis, Vanderbilt University, Nashville, TN, 2000"},{"issue":"6","key":"10.1016\/S0026-2714(00)00249-3_BIB8","doi-asserted-by":"crossref","first-page":"1952","DOI":"10.1109\/23.273458","article-title":"Experimental and 2D simulation study of the single-event burnout in n-channel power MOSFET\u2019s","volume":"40","author":"Roubaud","year":"1993","journal-title":"IEEE Trans Nucl Sci"},{"issue":"6","key":"10.1016\/S0026-2714(00)00249-3_BIB9","doi-asserted-by":"crossref","first-page":"2353","DOI":"10.1109\/23.659061","article-title":"Heavy ion induced failures in a power IGBT","volume":"44","author":"Lorfevre","year":"1997","journal-title":"IEEE Trans Nucl Sci"},{"issue":"5","key":"10.1016\/S0026-2714(00)00249-3_BIB10","doi-asserted-by":"crossref","first-page":"890","DOI":"10.1109\/16.381985","article-title":"Numerical simulation of submicrometer devices including coupled nonlocal transport and nonisothermal effects","volume":"42","author":"Apanovich","year":"1995","journal-title":"IEEE Trans Electron Dev"},{"key":"10.1016\/S0026-2714(00)00249-3_BIB11","doi-asserted-by":"crossref","unstructured":"Hefner AR, Blackburn DL. Thermal component models for electro-thermal network simulation. IEEE Transactions on Components Packaging and Manufacturing Technology Part A 1994;17(3):413","DOI":"10.1109\/95.311751"},{"key":"10.1016\/S0026-2714(00)00249-3_BIB12","unstructured":"\u00d6zi\u015fik MN. Boundary value problems of heat conduction. Mineola, NY: Dover; 1968"},{"key":"10.1016\/S0026-2714(00)00249-3_BIB13","unstructured":"Sze SM, Physics of semiconductor devices. 2nd ed. New York: Wiley; 1981"},{"key":"10.1016\/S0026-2714(00)00249-3_BIB14","unstructured":"Tien CL, Majumdar A, Gerner FM, editors. Microscale energy transport. London: Taylor and Francis; 1998"},{"issue":"2","key":"10.1016\/S0026-2714(00)00249-3_BIB15","doi-asserted-by":"crossref","first-page":"143","DOI":"10.1109\/4.272120","article-title":"Electrothermal simulation and design of integrated circuits","volume":"29","author":"Petegen","year":"1994","journal-title":"IEEE J Solid State Circ"}],"container-title":["Microelectronics Reliability"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/api.elsevier.com\/content\/article\/PII:S0026271400002493?httpAccept=text\/xml","content-type":"text\/xml","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/api.elsevier.com\/content\/article\/PII:S0026271400002493?httpAccept=text\/plain","content-type":"text\/plain","content-version":"vor","intended-application":"text-mining"}],"deposited":{"date-parts":[[2019,4,27]],"date-time":"2019-04-27T23:57:36Z","timestamp":1556409456000},"score":1,"resource":{"primary":{"URL":"https:\/\/linkinghub.elsevier.com\/retrieve\/pii\/S0026271400002493"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2001,4]]},"references-count":15,"journal-issue":{"issue":"4","published-print":{"date-parts":[[2001,4]]}},"alternative-id":["S0026271400002493"],"URL":"https:\/\/doi.org\/10.1016\/s0026-2714(00)00249-3","relation":{},"ISSN":["0026-2714"],"issn-type":[{"value":"0026-2714","type":"print"}],"subject":[],"published":{"date-parts":[[2001,4]]}}}