{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,9,9]],"date-time":"2025-09-09T20:43:41Z","timestamp":1757450621134,"version":"3.30.1"},"reference-count":25,"publisher":"Elsevier BV","issue":"4","license":[{"start":{"date-parts":[[2001,4,1]],"date-time":"2001-04-01T00:00:00Z","timestamp":986083200000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/www.elsevier.com\/tdm\/userlicense\/1.0\/"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Microelectronics Reliability"],"published-print":{"date-parts":[[2001,4]]},"DOI":"10.1016\/s0026-2714(00)00253-5","type":"journal-article","created":{"date-parts":[[2002,7,25]],"date-time":"2002-07-25T14:37:42Z","timestamp":1027607862000},"page":"543-551","source":"Crossref","is-referenced-by-count":26,"title":["Soft breakdown and hard breakdown in ultra-thin oxides"],"prefix":"10.1016","volume":"41","author":[{"given":"T.","family":"Pompl","sequence":"first","affiliation":[]},{"given":"C.","family":"Engel","sequence":"additional","affiliation":[]},{"given":"H.","family":"Wurzer","sequence":"additional","affiliation":[]},{"given":"M.","family":"Kerber","sequence":"additional","affiliation":[]}],"member":"78","reference":[{"key":"10.1016\/S0026-2714(00)00253-5_BIB1","unstructured":"Bri\u00e8re O, Chroboczek JA, Ghibaudo G. Random telegraph signal in the quasi-breakdown current of MOS capacitors. Proceedings of the 1996 European Solid-State Device Research Conference, 1996. p. 759"},{"issue":"11","key":"10.1016\/S0026-2714(00)00253-5_BIB2","doi-asserted-by":"crossref","first-page":"2329","DOI":"10.1109\/16.726650","article-title":"On the properties of gate and substrate current after soft breakdown in ultrathin oxide layers","volume":"45","author":"Crupi","year":"1998","journal-title":"IEEE Trans ED"},{"issue":"9","key":"10.1016\/S0026-2714(00)00253-5_BIB3","doi-asserted-by":"crossref","first-page":"1499","DOI":"10.1109\/16.535341","article-title":"Soft breakdown of ultra-thin gate oxide layers","volume":"43","author":"Depas","year":"1996","journal-title":"IEEE Trans Electron Dev"},{"key":"10.1016\/S0026-2714(00)00253-5_BIB4","doi-asserted-by":"crossref","unstructured":"Pompl T, Wurzer H, Kerber M, Wilkins RCW, Eisele I. Influence of soft breakdown on NMOSFET device characteristics. Proceedings of the 1999 International Reliability Physics Symposium, 1999. p. 82","DOI":"10.1109\/RELPHY.1999.761596"},{"issue":"5","key":"10.1016\/S0026-2714(00)00253-5_BIB5","doi-asserted-by":"crossref","first-page":"7","DOI":"10.1016\/S0038-1101(96)00111-6","article-title":"Definition of dielectric breakdown for ultra thin (<2 nm) gate oxides","volume":"41","author":"Depas","year":"1997","journal-title":"Solid-State Electron"},{"issue":"4","key":"10.1016\/S0026-2714(00)00253-5_BIB6","doi-asserted-by":"crossref","first-page":"904","DOI":"10.1109\/16.662800","article-title":"New insights in the relation between electron trap generation and the statistical properties of oxide breakdown","volume":"45","author":"Degraeve","year":"1998","journal-title":"IEEE Trans Electron Dev"},{"key":"10.1016\/S0026-2714(00)00253-5_BIB7","doi-asserted-by":"crossref","first-page":"3230","DOI":"10.1063\/1.120299","article-title":"Ultimate limit for defect generation in ultra-thin silicon dioxide","volume":"71","author":"DiMaria","year":"1997","journal-title":"J Appl Phys Lett"},{"key":"10.1016\/S0026-2714(00)00253-5_BIB8","doi-asserted-by":"crossref","unstructured":"Alam MA, Weir B, Bude J, Silverman P, Monroe D. Explanation of soft and hard breakdown and its consequences for area scaling. Technical Digest of the 1999 International Electron Device Meeting, 1999","DOI":"10.1109\/IEDM.1999.824190"},{"key":"10.1016\/S0026-2714(00)00253-5_BIB9","doi-asserted-by":"crossref","unstructured":"Bruy\u00e8re S, Vincent E, Ghibaudo G. Quasi-breakdown in ultra-thin SiO2 films: occurrence characterization and reliability assessment methodology. Proceedings of the 2000 International Reliability Physics Symposium, 2000. p. 48","DOI":"10.1109\/RELPHY.2000.843890"},{"key":"10.1016\/S0026-2714(00)00253-5_BIB10","doi-asserted-by":"crossref","unstructured":"Nicollian PE, Hunter WR, Hu JC. Experimental evidence for voltage driven breakdown models in ultrathin gate oxides. Proceedings of the 2000 International Reliability Physics Symposium, 2000. p. 7","DOI":"10.1109\/RELPHY.2000.843884"},{"key":"10.1016\/S0026-2714(00)00253-5_BIB11","doi-asserted-by":"crossref","unstructured":"McPherson J, Mogul H. Disturbed bonding states in SiO2 thin-films and their impact on time-dependent dielectric breakdown. Proceedings of the 1998 International Reliability Physics Symposium, 1998. p. 47","DOI":"10.1109\/RELPHY.1998.670441"},{"issue":"1","key":"10.1016\/S0026-2714(00)00253-5_BIB12","doi-asserted-by":"crossref","first-page":"220","DOI":"10.1109\/16.737462","article-title":"Field and temperature acceleration model for time-dependent dielectric breakdown","volume":"46","author":"Kimura","year":"1999","journal-title":"IEEE Trans Electron Dev"},{"key":"10.1016\/S0026-2714(00)00253-5_BIB13","doi-asserted-by":"crossref","unstructured":"Suehle JS, Chaparala P, Messick C, Miller WM, Boyko KC. Field and temperature acceleration of time-dependent dielectric breakdown in intrinsic thin SiO2.. Proceedings of the 1994 International Reliability Physics Symposium, 1994. p. 120","DOI":"10.1109\/RELPHY.1994.307847"},{"issue":"5","key":"10.1016\/S0026-2714(00)00253-5_BIB14","doi-asserted-by":"crossref","first-page":"801","DOI":"10.1109\/16.568042","article-title":"Low electric field breakdown of thin SiO2 films under static and dynamic stress","volume":"44","author":"Suehle","year":"1997","journal-title":"IEEE Trans Electron Dev"},{"key":"10.1016\/S0026-2714(00)00253-5_BIB15","doi-asserted-by":"crossref","unstructured":"Bruy\u00e8re S, Roy D, Vincent E, Ghibaudo G. Temperature acceleration of breakdown and quasi-breakdown phenomena in ultra-thin oxides. Proceedings of the 1999 European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, 1999","DOI":"10.1016\/S0026-2714(99)00106-7"},{"issue":"12","key":"10.1016\/S0026-2714(00)00253-5_BIB16","doi-asserted-by":"crossref","first-page":"1752","DOI":"10.1063\/1.123677","article-title":"Non-Arrhenius temperature dependence of reliability in ultrathin silicon dioxide films","volume":"74","author":"DiMaria","year":"1999","journal-title":"Appl Phys Lett"},{"key":"10.1016\/S0026-2714(00)00253-5_BIB17","unstructured":"Kaczer B, Degraeve R, Pangon N, Nigam T, Groeseneken G. The effect of elevated temperature on the reliability of very thin oxide films. Proceedings of the 1999 European Solid-State Device Research Conference, 1999. p. 356"},{"key":"10.1016\/S0026-2714(00)00253-5_BIB18","doi-asserted-by":"crossref","first-page":"47","DOI":"10.1016\/S0167-9317(99)00335-4","article-title":"Investigation of temperature acceleration of thin oxide time-to-breakdown","volume":"48","author":"Kaczer","year":"1999","journal-title":"Microelectron Engng"},{"key":"10.1016\/S0026-2714(00)00253-5_BIB19","doi-asserted-by":"crossref","first-page":"425","DOI":"10.1088\/0268-1242\/15\/5\/301","article-title":"Ultra-thin oxide reliability for ULSI applications","volume":"15","author":"Wu","year":"2000","journal-title":"Semiconduct Sci Technol"},{"issue":"7","key":"10.1016\/S0026-2714(00)00253-5_BIB20","doi-asserted-by":"crossref","first-page":"362","DOI":"10.1109\/55.847381","article-title":"Interrelationship of voltage and temperature dependence of oxide breakdown for ultrathin oxides","volume":"21","author":"Wu","year":"2000","journal-title":"IEEE Electron Dev Lett"},{"key":"10.1016\/S0026-2714(00)00253-5_BIB21","doi-asserted-by":"crossref","first-page":"1591","DOI":"10.1016\/S0026-2714(00)00172-4","article-title":"A complementary molecular-model (including field and current) for TDDB in SiO2 dielectrics","volume":"40","author":"McPherson","year":"2000","journal-title":"Microelectron Reliab"},{"key":"10.1016\/S0026-2714(00)00253-5_BIB22","unstructured":"Lide DR. CRC handbook of chemistry and physics, 73rd ed. Boca Raton, CRC Press Inc [chapters 9\u2013131]"},{"key":"10.1016\/S0026-2714(00)00253-5_BIB23","unstructured":"Sze SM. VLSI technology. 2nd ed. New York: McGraw-Hill; 1988 [chapter 7.9, table 7, p. 315]"},{"issue":"7","key":"10.1016\/S0026-2714(00)00253-5_BIB24","doi-asserted-by":"crossref","first-page":"2524","DOI":"10.1063\/1.335931","article-title":"Diffusion of radiolytic molecular hydrogen as a mechanism for the post-irradiation buildup of interface states in SiO2-on-Si structures","volume":"58","author":"Griscom","year":"1985","journal-title":"J Appl Phys"},{"key":"10.1016\/S0026-2714(00)00253-5_BIB25","doi-asserted-by":"crossref","unstructured":"Suehle JS, Vogel EM, Wang B, Bernstein JB. Temperature dependence of soft breakdown and wear-out in sub-3 nm SiO2 films. Proceedings of the 2000 International Reliability Physics Symposium, 2000. p. 33","DOI":"10.1109\/RELPHY.2000.843888"}],"container-title":["Microelectronics Reliability"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/api.elsevier.com\/content\/article\/PII:S0026271400002535?httpAccept=text\/xml","content-type":"text\/xml","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/api.elsevier.com\/content\/article\/PII:S0026271400002535?httpAccept=text\/plain","content-type":"text\/plain","content-version":"vor","intended-application":"text-mining"}],"deposited":{"date-parts":[[2024,12,4]],"date-time":"2024-12-04T03:28:23Z","timestamp":1733282903000},"score":1,"resource":{"primary":{"URL":"https:\/\/linkinghub.elsevier.com\/retrieve\/pii\/S0026271400002535"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2001,4]]},"references-count":25,"journal-issue":{"issue":"4","published-print":{"date-parts":[[2001,4]]}},"alternative-id":["S0026271400002535"],"URL":"https:\/\/doi.org\/10.1016\/s0026-2714(00)00253-5","relation":{},"ISSN":["0026-2714"],"issn-type":[{"type":"print","value":"0026-2714"}],"subject":[],"published":{"date-parts":[[2001,4]]}}}