{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2022,4,5]],"date-time":"2022-04-05T14:14:36Z","timestamp":1649168076570},"reference-count":22,"publisher":"Elsevier BV","issue":"6","license":[{"start":{"date-parts":[[2001,6,1]],"date-time":"2001-06-01T00:00:00Z","timestamp":991353600000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/www.elsevier.com\/tdm\/userlicense\/1.0\/"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Microelectronics Reliability"],"published-print":{"date-parts":[[2001,6]]},"DOI":"10.1016\/s0026-2714(01)00028-2","type":"journal-article","created":{"date-parts":[[2002,10,14]],"date-time":"2002-10-14T22:58:33Z","timestamp":1034636313000},"page":"815-822","source":"Crossref","is-referenced-by-count":1,"title":["Substrate potential shift due to parasitic minority carrier injection in smart-power ICs: measurements and full-chip 3D device simulation"],"prefix":"10.1016","volume":"41","author":[{"given":"M","family":"Schenkel","sequence":"first","affiliation":[]},{"given":"P","family":"Pf\u00e4ffli","sequence":"additional","affiliation":[]},{"given":"W","family":"Wilkening","sequence":"additional","affiliation":[]},{"given":"D","family":"Aemmer","sequence":"additional","affiliation":[]},{"given":"W","family":"Fichtner","sequence":"additional","affiliation":[]}],"member":"78","reference":[{"key":"10.1016\/S0026-2714(01)00028-2_BIB1","doi-asserted-by":"crossref","unstructured":"Murari B, Bertotti F, Vignola GA. Smart power ICs: technologies and applications. Berlin: Springer; 1996","DOI":"10.1007\/978-3-642-61395-1"},{"issue":"12","key":"10.1016\/S0026-2714(01)00028-2_BIB2","doi-asserted-by":"crossref","first-page":"1936","DOI":"10.1109\/T-ED.1986.22849","article-title":"Power integrated circuits \u2013 a brief overview","volume":"ED-33","author":"Baliga","year":"1986","journal-title":"IEEE Trans Electron Dev"},{"key":"10.1016\/S0026-2714(01)00028-2_BIB3","doi-asserted-by":"crossref","unstructured":"Masui S. Simulation of substrate coupling on mixed-signal MOS circuits. 1992 Symposium on VLSI Circuits. Digest of Technical Papers, IEEE, New York, 1992. p. 42\u20133","DOI":"10.1109\/VLSIC.1992.229245"},{"issue":"4","key":"10.1016\/S0026-2714(01)00028-2_BIB4","doi-asserted-by":"crossref","first-page":"420","DOI":"10.1109\/4.210024","article-title":"Experimental results and modeling techniques for substrate noise in mixed-signal integrated circuits","volume":"28","author":"Su","year":"1993","journal-title":"IEEE J Solid-State Circ"},{"issue":"10","key":"10.1016\/S0026-2714(01)00028-2_BIB5","doi-asserted-by":"crossref","first-page":"1212","DOI":"10.1109\/4.315205","article-title":"A simple approach to modeling cross-talk in integrated circuits","volume":"29","author":"Joardar","year":"1994","journal-title":"IEEE J Solid-State Circ"},{"issue":"4","key":"10.1016\/S0026-2714(01)00028-2_BIB6","doi-asserted-by":"crossref","first-page":"598","DOI":"10.1109\/4.563684","article-title":"Substrate coupling evaluation in BiCMOS technology","volume":"32","author":"Casalta","year":"1997","journal-title":"IEEE J Solid-State Circ"},{"key":"10.1016\/S0026-2714(01)00028-2_BIB7","unstructured":"Peppiette R. A new protection technique for ground recirculation parasitics in monolithic power I.C.s. Sanken Technical Report, vol. 26(1), 1994. p. 91\u20137"},{"key":"10.1016\/S0026-2714(01)00028-2_BIB8","doi-asserted-by":"crossref","unstructured":"de Cremoux G, Dubois E, Bardy S, Lebailly J. Simulations and measurements of cross-talk phenomena in BiCMOS technology for hard disk drives. International Electron Devices Meeting, Technical Digest, IEEE, New York, 1996. p. 481\u20134","DOI":"10.1109\/IEDM.1996.553631"},{"issue":"7","key":"10.1016\/S0026-2714(01)00028-2_BIB9","doi-asserted-by":"crossref","first-page":"1580","DOI":"10.1109\/16.701492","article-title":"A novel crosstalk isolation structure for bulk CMOS power IC's","volume":"45","author":"Chan","year":"1998","journal-title":"IEEE Trans Electron Dev"},{"issue":"12","key":"10.1016\/S0026-2714(01)00028-2_BIB10","doi-asserted-by":"crossref","first-page":"2025","DOI":"10.1109\/T-ED.1986.22862","article-title":"A new integrated silicon gate technology combining bipolar linear, CMOS logic and DMOS power parts","volume":"33","author":"Andreini","year":"1986","journal-title":"IEEE Trans Electron Dev"},{"key":"10.1016\/S0026-2714(01)00028-2_BIB11","doi-asserted-by":"crossref","unstructured":"Murari B. Reliability of smart power devices. Microelectronics Reliability. New York: Pergamon; 1997. p. 1735\u201342","DOI":"10.1016\/S0026-2714(97)00151-0"},{"issue":"8","key":"10.1016\/S0026-2714(01)00028-2_BIB12","doi-asserted-by":"crossref","first-page":"1090","DOI":"10.1109\/4.90061","article-title":"Controlling substrate currents in junction-Isolated IC's","volume":"26","author":"Widlar","year":"1991","journal-title":"IEEE J Solid-State Circ"},{"key":"10.1016\/S0026-2714(01)00028-2_BIB13","doi-asserted-by":"crossref","unstructured":"Schenkel M, Pf\u00e4ffli P, Mettler S, Reiner W, Wilkening W, Aemmer D, Fichtner W. Measurements and 3D device simulations of full-chip potential distribution at parasitic substrate current injection. Proceedings of European Solid-State Device Research Conference, Cork, Ireland, 2000. p. 600\u20133","DOI":"10.1109\/ESSDERC.2000.194849"},{"issue":"9","key":"10.1016\/S0026-2714(01)00028-2_BIB14","doi-asserted-by":"crossref","first-page":"1018","DOI":"10.1109\/T-ED.1983.21256","article-title":"Semiconductor device simulation","volume":"30","author":"Fichtner","year":"1983","journal-title":"IEEE Trans Electron Dev"},{"issue":"12","key":"10.1016\/S0026-2714(01)00028-2_BIB15","doi-asserted-by":"crossref","first-page":"2271","DOI":"10.1143\/JJAP.29.L2271","article-title":"Three dimensional transient simulation of complex silicon devices","volume":"29","author":"Conti","year":"1990","journal-title":"Jpn J Appl Phys"},{"key":"10.1016\/S0026-2714(01)00028-2_BIB16","doi-asserted-by":"crossref","unstructured":"Baccarani G, Rudan M, Lorenzini M, Fichtner W, Litsios J, Schenk A, van Staa P, Kaeser L, Kampmann A, Marmiroli A, Sala C, Ravanelli E. Device simulation for smart integrated systems (DESSIS). Proceedings of the Third IEEE International Conference on Electronics, Circuits and Systems, IEEE, New York, 1996. p. 752\u20135","DOI":"10.1109\/ICECS.1996.584471"},{"key":"10.1016\/S0026-2714(01)00028-2_BIB17","unstructured":"ISE Integrated Systems Engineering AG, ISE TCAD Manuals, Release 6.0, Zurich, 1999"},{"issue":"5","key":"10.1016\/S0026-2714(01)00028-2_BIB18","doi-asserted-by":"crossref","first-page":"975","DOI":"10.1109\/16.760406","article-title":"Three-dimensional modeling of the erasing operation in a submicron flash-EEPROM memory cell","volume":"46","author":"Lorenzini","year":"1999","journal-title":"IEEE Trans Electron Dev"},{"key":"10.1016\/S0026-2714(01)00028-2_BIB19","doi-asserted-by":"crossref","unstructured":"Shigyo N, Tanimoto H, Enda T. Mesh related problems in device simulation: treatment of mesh noise and leakage current. Solid-State Electronics. New York: Pergamon; 2000. p. 11\u20136","DOI":"10.1016\/S0038-1101(99)00220-8"},{"key":"10.1016\/S0026-2714(01)00028-2_BIB20","doi-asserted-by":"crossref","unstructured":"Axelrad V, Duane M. Controlling mesh effects in integrated process and device simulation. International Workshop on Statistical Metrology, IEEE, New York, 1998. p. 100\u20133","DOI":"10.1109\/IWSTM.1998.729781"},{"issue":"11","key":"10.1016\/S0026-2714(01)00028-2_BIB21","doi-asserted-by":"crossref","first-page":"1563","DOI":"10.1016\/S0026-2714(99)00075-X","article-title":"Characerization and optimization of a bipolar ESD-device by measurements and simulations","volume":"39","author":"Stricker","year":"1999","journal-title":"Microelectron Reliab"},{"key":"10.1016\/S0026-2714(01)00028-2_BIB22","unstructured":"SUBSAFE, Substrate current safe smart power IC design methodology, ESPRIT Project 29647, http:\/\/www.iis.ee.ethz.ch\/nwp\/subsafe\/index.html"}],"container-title":["Microelectronics Reliability"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/api.elsevier.com\/content\/article\/PII:S0026271401000282?httpAccept=text\/xml","content-type":"text\/xml","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/api.elsevier.com\/content\/article\/PII:S0026271401000282?httpAccept=text\/plain","content-type":"text\/plain","content-version":"vor","intended-application":"text-mining"}],"deposited":{"date-parts":[[2020,2,5]],"date-time":"2020-02-05T06:35:39Z","timestamp":1580884539000},"score":1,"resource":{"primary":{"URL":"https:\/\/linkinghub.elsevier.com\/retrieve\/pii\/S0026271401000282"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2001,6]]},"references-count":22,"journal-issue":{"issue":"6","published-print":{"date-parts":[[2001,6]]}},"alternative-id":["S0026271401000282"],"URL":"https:\/\/doi.org\/10.1016\/s0026-2714(01)00028-2","relation":{},"ISSN":["0026-2714"],"issn-type":[{"value":"0026-2714","type":"print"}],"subject":[],"published":{"date-parts":[[2001,6]]}}}