{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,10,30]],"date-time":"2025-10-30T18:17:28Z","timestamp":1761848248188,"version":"build-2065373602"},"reference-count":18,"publisher":"Elsevier BV","issue":"6","license":[{"start":{"date-parts":[[2001,6,1]],"date-time":"2001-06-01T00:00:00Z","timestamp":991353600000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/www.elsevier.com\/tdm\/userlicense\/1.0\/"},{"start":{"date-parts":[[2001,6,1]],"date-time":"2001-06-01T00:00:00Z","timestamp":991353600000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/www.elsevier.com\/legal\/tdmrep-license"}],"content-domain":{"domain":["elsevier.com","sciencedirect.com"],"crossmark-restriction":true},"short-container-title":["Microelectronics Reliability"],"published-print":{"date-parts":[[2001,6]]},"DOI":"10.1016\/s0026-2714(01)00037-3","type":"journal-article","created":{"date-parts":[[2002,10,14]],"date-time":"2002-10-14T18:58:33Z","timestamp":1034621913000},"page":"927-931","update-policy":"https:\/\/doi.org\/10.1016\/elsevier_cm_policy","source":"Crossref","is-referenced-by-count":8,"title":["The effect of image potential on electron transmission and electric current in the direct tunneling regime of ultra-thin MOS structures"],"prefix":"10.1016","volume":"41","author":[{"given":"Lingfeng","family":"Mao","sequence":"first","affiliation":[]},{"given":"Changhua","family":"Tan","sequence":"additional","affiliation":[]},{"given":"Mingzhen","family":"Xu","sequence":"additional","affiliation":[]}],"member":"78","reference":[{"year":"1981","series-title":"Physics of semiconductor devices","author":"Sze","key":"10.1016\/S0026-2714(01)00037-3_BIB1"},{"key":"10.1016\/S0026-2714(01)00037-3_BIB2","doi-asserted-by":"crossref","first-page":"5052","DOI":"10.1063\/1.331336","article-title":"On tunneling in metal-oxide-silicon structures","volume":"53","author":"Weinberg","year":"1982","journal-title":"J Appl Phys"},{"key":"10.1016\/S0026-2714(01)00037-3_BIB3","doi-asserted-by":"crossref","first-page":"1233","DOI":"10.1109\/16.506774","article-title":"1.5 nm direct-tunneling gate oxide Si MOSFETs","volume":"43","author":"Momose","year":"1996","journal-title":"IEEE Trans ED"},{"key":"10.1016\/S0026-2714(01)00037-3_BIB4","doi-asserted-by":"crossref","first-page":"725","DOI":"10.1016\/S0038-1101(96)00111-6","article-title":"Definition of dielectric breakdown for ultra thin (<2 nm) gate oxides","volume":"41","author":"Depas","year":"1997","journal-title":"Solid-State Electron"},{"key":"10.1016\/S0026-2714(01)00037-3_BIB5","doi-asserted-by":"crossref","first-page":"997","DOI":"10.1016\/S0038-1101(98)00097-5","article-title":"Modeling gate leakage current in nMOS structures due to tunneling through an ultra-thin oxide","volume":"42","author":"Shih","year":"1998","journal-title":"Solid-State Electron"},{"key":"10.1016\/S0026-2714(01)00037-3_BIB6","doi-asserted-by":"crossref","first-page":"1464","DOI":"10.1109\/16.772492","article-title":"Modeling study of ultra-thin gate oxides using tunneling current and capacitance\u2013voltage measurements in MOS devices","volume":"46","author":"Yang","year":"1999","journal-title":"IEEE Trans ED"},{"key":"10.1016\/S0026-2714(01)00037-3_BIB7","doi-asserted-by":"crossref","first-page":"278","DOI":"10.1063\/1.1657043","article-title":"Fowler\u2013Nordheim tunneling into thermally grown SiO2","volume":"40","author":"Lenzlinger","year":"1969","journal-title":"J Appl Phys"},{"key":"10.1016\/S0026-2714(01)00037-3_BIB8","doi-asserted-by":"crossref","first-page":"1602","DOI":"10.1143\/JJAP.36.1602","article-title":"Reliability of ultrathin gate oxide below 3 nm in the direct tunneling regime","volume":"36","author":"Depas","year":"1997","journal-title":"Jpn J Appl Phys"},{"key":"10.1016\/S0026-2714(01)00037-3_BIB9","doi-asserted-by":"crossref","first-page":"1465","DOI":"10.1016\/0038-1101(94)00269-L","article-title":"Determination of tunneling parameters in ultra-thin oxide layer poly-Si\/SiO2\/Si structures","volume":"38","author":"Depas","year":"1995","journal-title":"Solid-State Electron"},{"key":"10.1016\/S0026-2714(01)00037-3_BIB10","doi-asserted-by":"crossref","first-page":"2016","DOI":"10.1049\/el:19991356","article-title":"Practical model for low electric field direct-tunneling current characteristics in nanometer-thick oxide films","volume":"35","author":"Nakatsuji","year":"1999","journal-title":"Electron Lett"},{"key":"10.1016\/S0026-2714(01)00037-3_BIB11","doi-asserted-by":"crossref","first-page":"3967","DOI":"10.1143\/JJAP.38.3967","article-title":"Analysis of direct tunneling for this SiO2 film","volume":"38","author":"Matsuo","year":"1999","journal-title":"Jpn J Appl Phys"},{"key":"10.1016\/S0026-2714(01)00037-3_BIB12","doi-asserted-by":"crossref","first-page":"457","DOI":"10.1063\/1.123060","article-title":"Analytic model for direct tunneling current in polcrystallinesilicon-gatemetal\u2013oxide\u2013semiconductor devices","volume":"74","author":"Leonard","year":"1999","journal-title":"Appl Phys Lett"},{"key":"10.1016\/S0026-2714(01)00037-3_BIB13","doi-asserted-by":"crossref","unstructured":"Khairurrijal, Mizubayashi W, Miyazaki S, Hirose M. Analytic model of direct tunnel current through ultrathin gate oxides, J Appl Phys 2000;87:3000\u20135","DOI":"10.1063\/1.372290"},{"key":"10.1016\/S0026-2714(01)00037-3_BIB14","doi-asserted-by":"crossref","first-page":"2021","DOI":"10.1016\/S0038-1101(00)00137-4","article-title":"Direct tunneling relaxation spectroscopy in ultra-thin gate oxide MOS structures","volume":"44","author":"Wei","year":"2000","journal-title":"Solid-State Electron"},{"year":"1963","series-title":"Quantum theory","author":"Bohm","key":"10.1016\/S0026-2714(01)00037-3_BIB15"},{"key":"10.1016\/S0026-2714(01)00037-3_BIB16","doi-asserted-by":"crossref","first-page":"1497","DOI":"10.1063\/1.338082","article-title":"Calculation of transmission tunneling current across arbitrary potential barriers","volume":"61","author":"Ando","year":"1987","journal-title":"J Appl Phys"},{"key":"10.1016\/S0026-2714(01)00037-3_BIB17","doi-asserted-by":"crossref","first-page":"1555","DOI":"10.1063\/1.337788","article-title":"Exact solution of the Schrodinger equation across an arbitrary one-dimensional piecewise-linear potential barrier","volume":"60","author":"Lui","year":"1986","journal-title":"J Appl Phys"},{"key":"10.1016\/S0026-2714(01)00037-3_BIB18","doi-asserted-by":"crossref","first-page":"2256","DOI":"10.1063\/1.121270","article-title":"Cuurent\u2013voltage characteristics of metal\u2013insulator\u2013semiconductor structures via mechanical tunneling","volume":"72","author":"Mohaidat","year":"1998","journal-title":"Appl Phys Lett"}],"container-title":["Microelectronics Reliability"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/api.elsevier.com\/content\/article\/PII:S0026271401000373?httpAccept=text\/xml","content-type":"text\/xml","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/api.elsevier.com\/content\/article\/PII:S0026271401000373?httpAccept=text\/plain","content-type":"text\/plain","content-version":"vor","intended-application":"text-mining"}],"deposited":{"date-parts":[[2025,9,21]],"date-time":"2025-09-21T05:24:28Z","timestamp":1758432268000},"score":1,"resource":{"primary":{"URL":"https:\/\/linkinghub.elsevier.com\/retrieve\/pii\/S0026271401000373"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2001,6]]},"references-count":18,"journal-issue":{"issue":"6","published-print":{"date-parts":[[2001,6]]}},"alternative-id":["S0026271401000373"],"URL":"https:\/\/doi.org\/10.1016\/s0026-2714(01)00037-3","relation":{},"ISSN":["0026-2714"],"issn-type":[{"type":"print","value":"0026-2714"}],"subject":[],"published":{"date-parts":[[2001,6]]},"assertion":[{"value":"Elsevier","name":"publisher","label":"This article is maintained by"},{"value":"The effect of image potential on electron transmission and electric current in the direct tunneling regime of ultra-thin MOS structures","name":"articletitle","label":"Article Title"},{"value":"Microelectronics Reliability","name":"journaltitle","label":"Journal Title"},{"value":"https:\/\/doi.org\/10.1016\/S0026-2714(01)00037-3","name":"articlelink","label":"CrossRef DOI link to publisher maintained version"},{"value":"converted-article","name":"content_type","label":"Content Type"},{"value":"Copyright \u00a9 2001 Elsevier Science Ltd. All rights reserved.","name":"copyright","label":"Copyright"}]}}