{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2022,4,1]],"date-time":"2022-04-01T03:35:58Z","timestamp":1648784158134},"reference-count":17,"publisher":"Elsevier BV","issue":"11","license":[{"start":{"date-parts":[[2001,11,1]],"date-time":"2001-11-01T00:00:00Z","timestamp":1004572800000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/www.elsevier.com\/tdm\/userlicense\/1.0\/"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Microelectronics Reliability"],"published-print":{"date-parts":[[2001,11]]},"DOI":"10.1016\/s0026-2714(01)00044-0","type":"journal-article","created":{"date-parts":[[2002,7,25]],"date-time":"2002-07-25T10:28:48Z","timestamp":1027592928000},"page":"1841-1846","source":"Crossref","is-referenced-by-count":4,"title":["Influence of device geometry on SOI single-hole transistor characteristics"],"prefix":"10.1016","volume":"41","author":[{"given":"X","family":"Tang","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"X","family":"Baie","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"J.P","family":"Colinge","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"P","family":"Loumaye","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"C","family":"Renaux","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"V","family":"Bayot","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"78","reference":[{"key":"10.1016\/S0026-2714(01)00044-0_BIB1","doi-asserted-by":"crossref","unstructured":"Ahmed H. Single-electron and few electron memory cells. Proceedings IEDM 1999. p. 363\u20136","DOI":"10.1109\/IEDM.1999.824170"},{"issue":"12B","key":"10.1016\/S0026-2714(01)00044-0_BIB2","doi-asserted-by":"crossref","first-page":"6956","DOI":"10.1143\/JJAP.34.6956","article-title":"Fabrication of lateral tunnel junctions and measurement of coulomb blockade effects","volume":"34","author":"Langheinrich","year":"1995","journal-title":"Jpn J Appl Phys"},{"issue":"16","key":"10.1016\/S0026-2714(01)00044-0_BIB3","doi-asserted-by":"crossref","first-page":"2119","DOI":"10.1063\/1.111702","article-title":"Coulomb blockade in a silicon tunnel junction device","volume":"64","author":"Ali","year":"1994","journal-title":"Appl Phys Lett"},{"key":"10.1016\/S0026-2714(01)00044-0_BIB4","doi-asserted-by":"crossref","unstructured":"Zhuang L, Guo L, Chou SY. Silicon single-electron quantum-dot transistor switch operating at room temperature. Appl Phys Lett 1998;72(10):1205\u20137","DOI":"10.1063\/1.121014"},{"issue":"2","key":"10.1016\/S0026-2714(01)00044-0_BIB5","doi-asserted-by":"crossref","first-page":"136","DOI":"10.1049\/el:19950082","article-title":"Fabrication technique for Si single-electron transistor operating at room temperature","volume":"31","author":"Takahashi","year":"1995","journal-title":"Electron Lett"},{"issue":"12","key":"10.1016\/S0026-2714(01)00044-0_BIB6","doi-asserted-by":"crossref","first-page":"2259","DOI":"10.1016\/S0038-1101(00)00221-5","article-title":"Self-aligned SOI nano flash memory device","volume":"44","author":"Tang","year":"2001","journal-title":"Solid-State Electron"},{"key":"10.1016\/S0026-2714(01)00044-0_BIB7","unstructured":"Tang X, Baie X, Bayot V, Van de Wiele F, Colinge JP. An SOI single-electron transistor. The Proceedings of the IEEE International SOI Conference, 1999. p. 46\u20137"},{"issue":"4","key":"10.1016\/S0026-2714(01)00044-0_BIB8","doi-asserted-by":"crossref","first-page":"705","DOI":"10.1103\/PhysRevLett.75.705","article-title":"Single-electron charging in double and triple quantum dots with tunable coupling","volume":"75","author":"Waugh","year":"1995","journal-title":"Phys Rev Lett"},{"issue":"25","key":"10.1016\/S0026-2714(01)00044-0_BIB9","doi-asserted-by":"crossref","first-page":"3585","DOI":"10.1063\/1.116645","article-title":"Coulomb blockade oscillations at room temperature in a Si quantum wire metal-oxide-semiconductor substrate","volume":"66","author":"Ishikuro","year":"1996","journal-title":"Appl Phys Lett"},{"key":"10.1016\/S0026-2714(01)00044-0_BIB10","doi-asserted-by":"crossref","unstructured":"Ferry DK, Goodnick SM. Transport in nanostructures. Cambridge: Cambridge University Press; 1997. p. 239","DOI":"10.1017\/CBO9780511626128"},{"key":"10.1016\/S0026-2714(01)00044-0_BIB11","doi-asserted-by":"crossref","unstructured":"Sohn LL, Kouwenhoven LP, Sch\u00f6n G. Mesoscopic electron transport. Dordrecht: Kluwer Academic; 1997. p. 119","DOI":"10.1007\/978-94-015-8839-3"},{"key":"10.1016\/S0026-2714(01)00044-0_BIB12","unstructured":"Tang X, Baie X, Colinge JP, V. Bayot, Investigation of tunnel barrier nature in an SOI single-hole transistor based on the solving the poisson and Schr\u00f6dinger equations self-consistently, in preparation"},{"key":"10.1016\/S0026-2714(01)00044-0_BIB13","doi-asserted-by":"crossref","unstructured":"Colinge J-P. Silicon-on-insulator technology: materials to VLSI. 2nd ed. Dordrecht: Kluwer Academic Publishers: 1997. p. 215","DOI":"10.1007\/978-1-4757-2611-4"},{"issue":"8","key":"10.1016\/S0026-2714(01)00044-0_BIB14","doi-asserted-by":"crossref","first-page":"1213","DOI":"10.1109\/16.506771","article-title":"Size dependence of the characteristics of Si single-electron transistor on SIMOX substrates","volume":"43","author":"Takahashi","year":"1996","journal-title":"IEEE Tran Electron Dev"},{"issue":"1","key":"10.1016\/S0026-2714(01)00044-0_BIB15","doi-asserted-by":"crossref","first-page":"25","DOI":"10.1109\/16.2412","article-title":"Two-dimensional thermal oxidation of silicon II Modeling stress effects in wet oxides","volume":"ED-35","author":"Kao","year":"1988","journal-title":"IEEE Trans"},{"issue":"12","key":"10.1016\/S0026-2714(01)00044-0_BIB16","doi-asserted-by":"crossref","first-page":"7644","DOI":"10.1103\/PhysRevB.46.7644","article-title":"Single-electron tunnelling in nanometre-scale double-barrier heterostructure devices","volume":"46","author":"Su","year":"1992","journal-title":"Phys Rev B"},{"issue":"4","key":"10.1016\/S0026-2714(01)00044-0_BIB17","doi-asserted-by":"crossref","first-page":"1646","DOI":"10.1103\/PhysRevB.44.1646","article-title":"Theory of coulomb-blockade oscillations in the conductance of a quantum dot","volume":"44","author":"Beenakker","year":"1991","journal-title":"Phys Rev B"}],"container-title":["Microelectronics Reliability"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/api.elsevier.com\/content\/article\/PII:S0026271401000440?httpAccept=text\/xml","content-type":"text\/xml","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/api.elsevier.com\/content\/article\/PII:S0026271401000440?httpAccept=text\/plain","content-type":"text\/plain","content-version":"vor","intended-application":"text-mining"}],"deposited":{"date-parts":[[2019,4,28]],"date-time":"2019-04-28T03:56:47Z","timestamp":1556423807000},"score":1,"resource":{"primary":{"URL":"https:\/\/linkinghub.elsevier.com\/retrieve\/pii\/S0026271401000440"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2001,11]]},"references-count":17,"journal-issue":{"issue":"11","published-print":{"date-parts":[[2001,11]]}},"alternative-id":["S0026271401000440"],"URL":"https:\/\/doi.org\/10.1016\/s0026-2714(01)00044-0","relation":{},"ISSN":["0026-2714"],"issn-type":[{"value":"0026-2714","type":"print"}],"subject":[],"published":{"date-parts":[[2001,11]]}}}