{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,7,5]],"date-time":"2024-07-05T23:37:00Z","timestamp":1720222620606},"reference-count":12,"publisher":"Elsevier BV","issue":"7","license":[{"start":{"date-parts":[[2001,7,1]],"date-time":"2001-07-01T00:00:00Z","timestamp":993945600000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/www.elsevier.com\/tdm\/userlicense\/1.0\/"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Microelectronics Reliability"],"published-print":{"date-parts":[[2001,7]]},"DOI":"10.1016\/s0026-2714(01)00052-x","type":"journal-article","created":{"date-parts":[[2002,7,25]],"date-time":"2002-07-25T14:37:42Z","timestamp":1027607862000},"page":"981-985","source":"Crossref","is-referenced-by-count":5,"title":["Reduction of boron penetration through thin silicon oxide with a nitrogen doped silicon layer"],"prefix":"10.1016","volume":"41","author":[{"given":"L.","family":"Jalabert","sequence":"first","affiliation":[]},{"given":"P.","family":"Temple-Boyer","sequence":"additional","affiliation":[]},{"given":"G.","family":"Sarrabayrouse","sequence":"additional","affiliation":[]},{"given":"F.","family":"Cristiano","sequence":"additional","affiliation":[]},{"given":"B.","family":"Colombeau","sequence":"additional","affiliation":[]},{"given":"F.","family":"Voillot","sequence":"additional","affiliation":[]},{"given":"C.","family":"Armand","sequence":"additional","affiliation":[]}],"member":"78","reference":[{"issue":"6","key":"10.1016\/S0026-2714(01)00052-X_BIB1","doi-asserted-by":"crossref","first-page":"3028","DOI":"10.1063\/1.361242","volume":"79","author":"Reisinger","year":"1996","journal-title":"J Appl Phys"},{"issue":"8","key":"10.1016\/S0026-2714(01)00052-X_BIB2","doi-asserted-by":"crossref","first-page":"1503","DOI":"10.1109\/16.398666","volume":"42","author":"Lin","year":"1995","journal-title":"IEEE Trans Electron Dev"},{"issue":"8","key":"10.1016\/S0026-2714(01)00052-X_BIB3","doi-asserted-by":"crossref","first-page":"1842","DOI":"10.1109\/16.57135","volume":"37","author":"Pfiester","year":"1990","journal-title":"IEEE Trans Electron Dev"},{"key":"10.1016\/S0026-2714(01)00052-X_BIB4","doi-asserted-by":"crossref","first-page":"187","DOI":"10.1016\/S0026-2714(98)00240-6","volume":"39","author":"Temple-Boyer","year":"1999","journal-title":"Microel Rel"},{"key":"10.1016\/S0026-2714(01)00052-X_BIB5","doi-asserted-by":"crossref","first-page":"633","DOI":"10.1016\/S0026-2714(99)00264-4","volume":"40","author":"Herden","year":"2000","journal-title":"Microel Rel"},{"key":"10.1016\/S0026-2714(01)00052-X_BIB6","doi-asserted-by":"crossref","first-page":"879","DOI":"10.1016\/S0026-2714(99)00117-1","volume":"39","author":"Croci","year":"1999","journal-title":"Microel Rel"},{"issue":"11\/12","key":"10.1016\/S0026-2714(01)00052-X_BIB7","doi-asserted-by":"crossref","first-page":"1657","DOI":"10.1016\/0026-2714(93)90078-D","volume":"33","author":"Pio","year":"1993","journal-title":"Microel Rel"},{"issue":"12","key":"10.1016\/S0026-2714(01)00052-X_BIB8","doi-asserted-by":"crossref","first-page":"4326","DOI":"10.1149\/1.1838186","volume":"144","author":"Nakayama","year":"1997","journal-title":"J Electrochem Soc"},{"issue":"4","key":"10.1016\/S0026-2714(01)00052-X_BIB9","doi-asserted-by":"crossref","first-page":"787","DOI":"10.1149\/1.2108678","volume":"133","author":"Ruggles","year":"1986","journal-title":"J Electrochem Soc"},{"key":"10.1016\/S0026-2714(01)00052-X_BIB10","unstructured":"Kamins T. Polycrystalline silicon for integrated circuit applications. 2nd ed. Boston: Kluwer Academic Publishers; 1991"},{"issue":"12","key":"10.1016\/S0026-2714(01)00052-X_BIB11","doi-asserted-by":"crossref","first-page":"1781","DOI":"10.1063\/1.117484","volume":"69","author":"Chao","year":"1996","journal-title":"Appl Phys Lett"},{"issue":"10","key":"10.1016\/S0026-2714(01)00052-X_BIB12","doi-asserted-by":"crossref","first-page":"388","DOI":"10.1109\/55.720195","volume":"19","author":"Shi","year":"1998","journal-title":"IEEE Electron Dev Lett"}],"container-title":["Microelectronics Reliability"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/api.elsevier.com\/content\/article\/PII:S002627140100052X?httpAccept=text\/xml","content-type":"text\/xml","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/api.elsevier.com\/content\/article\/PII:S002627140100052X?httpAccept=text\/plain","content-type":"text\/plain","content-version":"vor","intended-application":"text-mining"}],"deposited":{"date-parts":[[2019,4,28]],"date-time":"2019-04-28T03:57:49Z","timestamp":1556423869000},"score":1,"resource":{"primary":{"URL":"https:\/\/linkinghub.elsevier.com\/retrieve\/pii\/S002627140100052X"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2001,7]]},"references-count":12,"journal-issue":{"issue":"7","published-print":{"date-parts":[[2001,7]]}},"alternative-id":["S002627140100052X"],"URL":"https:\/\/doi.org\/10.1016\/s0026-2714(01)00052-x","relation":{},"ISSN":["0026-2714"],"issn-type":[{"value":"0026-2714","type":"print"}],"subject":[],"published":{"date-parts":[[2001,7]]}}}