{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,2,7]],"date-time":"2024-02-07T08:06:25Z","timestamp":1707293185215},"reference-count":10,"publisher":"Elsevier BV","issue":"7","license":[{"start":{"date-parts":[[2001,7,1]],"date-time":"2001-07-01T00:00:00Z","timestamp":993945600000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/www.elsevier.com\/tdm\/userlicense\/1.0\/"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Microelectronics Reliability"],"published-print":{"date-parts":[[2001,7]]},"DOI":"10.1016\/s0026-2714(01)00062-2","type":"journal-article","created":{"date-parts":[[2002,7,25]],"date-time":"2002-07-25T10:37:42Z","timestamp":1027593462000},"page":"1023-1026","source":"Crossref","is-referenced-by-count":5,"title":["High field stress at and above room temperature in 2.3 nm thick oxides"],"prefix":"10.1016","volume":"41","author":[{"given":"D.","family":"Zander","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"C.","family":"Petit","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"F.","family":"Saigne","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"A.","family":"Meinertzhagen","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"78","reference":[{"key":"10.1016\/S0026-2714(01)00062-2_BIB1","doi-asserted-by":"crossref","first-page":"2259","DOI":"10.1109\/16.8801","article-title":"High-field-induced degradation in ultra-thin SiO2 films","volume":"35","author":"Olivo","year":"1988","journal-title":"IEEE Trans Electron Dev"},{"key":"10.1016\/S0026-2714(01)00062-2_BIB2","doi-asserted-by":"crossref","first-page":"986","DOI":"10.1109\/16.210209","article-title":"Correlation of stress-induced leakage current in thin oxides with trap generation inside the oxides","volume":"40","author":"Dumin","year":"1993","journal-title":"IEEE Trans Electron Dev"},{"key":"10.1016\/S0026-2714(01)00062-2_BIB3","doi-asserted-by":"crossref","first-page":"317","DOI":"10.1109\/16.557724","article-title":"Mechanism of stress-induced leakage current in MOS capacitors","volume":"44","author":"Rosenbaum","year":"1997","journal-title":"IEEE Trans Electron Dev"},{"key":"10.1016\/S0026-2714(01)00062-2_BIB4","doi-asserted-by":"crossref","first-page":"1266","DOI":"10.1109\/16.842972","article-title":"Modeling of SILC based on electron and hole tunneling \u2013 Part II: steady-state","volume":"47","author":"Ielmini","year":"2000","journal-title":"IEEE Trans Electron Dev"},{"key":"10.1016\/S0026-2714(01)00062-2_BIB5","unstructured":"Ghetti A, Sangiorgi E, Bude J, Sorsch TW, Weber G. Low voltage tunneling in ultra-thin oxides: a monitor for interface states and degradation. IEDM, 1999"},{"key":"10.1016\/S0026-2714(01)00062-2_BIB6","doi-asserted-by":"crossref","unstructured":"Zander D, Saigne F, Petit C, Meinertzhagen A. Electrical stress effects on ultra-thin (2.3 nm) oxides. J Non-Cryst Solids 2001;280:86\u201391","DOI":"10.1016\/S0022-3093(00)00393-8"},{"key":"10.1016\/S0026-2714(01)00062-2_BIB7","doi-asserted-by":"crossref","first-page":"1554","DOI":"10.1109\/16.701488","article-title":"Modeling and simulation of stress-induced leakage current in ultra-thin SiO2 films","volume":"45","author":"Ricco","year":"1998","journal-title":"IEEE Trans Electron Dev"},{"key":"10.1016\/S0026-2714(01)00062-2_BIB8","doi-asserted-by":"crossref","first-page":"47","DOI":"10.1016\/S0167-9317(99)00335-4","article-title":"Investigation of temperature acceleration of thin oxide time-to-breakdown","volume":"48","author":"Kaczer","year":"1999","journal-title":"Microelect Eng"},{"key":"10.1016\/S0026-2714(01)00062-2_BIB9","doi-asserted-by":"crossref","first-page":"395","DOI":"10.1016\/S0167-9317(99)00413-X","article-title":"Oxide scaling limit for future logic and memory technology","volume":"48","author":"Stathis","year":"1999","journal-title":"Microelect Eng"},{"key":"10.1016\/S0026-2714(01)00062-2_BIB10","doi-asserted-by":"crossref","unstructured":"Simonetti O, Maurel T, Jourdain M. Extraction of the oxide thickness using a MOS structure quantum model for SiO2 oxide <5 nm thick films. J Non-Cryst Solids 2001;280:110\u20135","DOI":"10.1016\/S0022-3093(00)00361-6"}],"container-title":["Microelectronics Reliability"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/api.elsevier.com\/content\/article\/PII:S0026271401000622?httpAccept=text\/xml","content-type":"text\/xml","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/api.elsevier.com\/content\/article\/PII:S0026271401000622?httpAccept=text\/plain","content-type":"text\/plain","content-version":"vor","intended-application":"text-mining"}],"deposited":{"date-parts":[[2019,4,27]],"date-time":"2019-04-27T23:57:46Z","timestamp":1556409466000},"score":1,"resource":{"primary":{"URL":"https:\/\/linkinghub.elsevier.com\/retrieve\/pii\/S0026271401000622"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2001,7]]},"references-count":10,"journal-issue":{"issue":"7","published-print":{"date-parts":[[2001,7]]}},"alternative-id":["S0026271401000622"],"URL":"https:\/\/doi.org\/10.1016\/s0026-2714(01)00062-2","relation":{},"ISSN":["0026-2714"],"issn-type":[{"value":"0026-2714","type":"print"}],"subject":[],"published":{"date-parts":[[2001,7]]}}}