{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2022,4,5]],"date-time":"2022-04-05T22:02:23Z","timestamp":1649196143653},"reference-count":6,"publisher":"Elsevier BV","issue":"7","license":[{"start":{"date-parts":[[2001,7,1]],"date-time":"2001-07-01T00:00:00Z","timestamp":993945600000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/www.elsevier.com\/tdm\/userlicense\/1.0\/"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Microelectronics Reliability"],"published-print":{"date-parts":[[2001,7]]},"DOI":"10.1016\/s0026-2714(01)00068-3","type":"journal-article","created":{"date-parts":[[2002,7,25]],"date-time":"2002-07-25T14:37:42Z","timestamp":1027607862000},"page":"1045-1048","source":"Crossref","is-referenced-by-count":2,"title":["Sub-100 nm CMOS circuit performance with high-K gate dielectrics"],"prefix":"10.1016","volume":"41","author":[{"given":"N.R.","family":"Mohapatra","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"A.","family":"Dutta","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"G.","family":"Sridhar","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"M.P.","family":"Desai","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"V.R.","family":"Rao","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"78","reference":[{"key":"10.1016\/S0026-2714(01)00068-3_BIB1","doi-asserted-by":"crossref","first-page":"1233","DOI":"10.1109\/16.506774","article-title":"1.5 nm direct tunneling gate oxide Si MOSFETs","volume":"43","author":"Momose","year":"1996","journal-title":"IEEE Trans Electron Dev"},{"key":"10.1016\/S0026-2714(01)00068-3_BIB2","doi-asserted-by":"crossref","first-page":"1537","DOI":"10.1109\/16.772508","article-title":"The impact of high-K gate dielectrics and metal gate electrodes on sub 100 nm MOSFETs","volume":"46","author":"Cheng","year":"1999","journal-title":"IEEE Trans Electron Dev"},{"key":"10.1016\/S0026-2714(01)00068-3_BIB3","doi-asserted-by":"crossref","first-page":"1150","DOI":"10.1049\/el:19980800","article-title":"Fringing induced barrier lowering in sub-100 nm MOSFETs with high-K gate dielectrics","volume":"34","author":"Yeap","year":"1998","journal-title":"Electron Lett"},{"key":"10.1016\/S0026-2714(01)00068-3_BIB4","doi-asserted-by":"crossref","unstructured":"Mohapatra NR, Dutta A, Desai MP, Rao VR. Effect of fringing capacitances in sub-100 nm MOSFETs with high-K gate dielectrics. Proceedings of 14th International Conference on VLSI Design, January 2001. p. 479","DOI":"10.1109\/ICVD.2001.902704"},{"issue":"2","key":"10.1016\/S0026-2714(01)00068-3_BIB5","doi-asserted-by":"crossref","first-page":"325","DOI":"10.1109\/22.216475","article-title":"An improved floating-random-walk algorithm for solving multi-dielectric drichlet problem","volume":"41","author":"Lecoz","year":"1993","journal-title":"IEEE Trans Microwave Theor Tech"},{"key":"10.1016\/S0026-2714(01)00068-3_BIB6","unstructured":"TMA MEDICI: Two-dimensional device simulation program, Technology Modeling Associates Inc"}],"container-title":["Microelectronics Reliability"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/api.elsevier.com\/content\/article\/PII:S0026271401000683?httpAccept=text\/xml","content-type":"text\/xml","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/api.elsevier.com\/content\/article\/PII:S0026271401000683?httpAccept=text\/plain","content-type":"text\/plain","content-version":"vor","intended-application":"text-mining"}],"deposited":{"date-parts":[[2019,4,28]],"date-time":"2019-04-28T03:57:44Z","timestamp":1556423864000},"score":1,"resource":{"primary":{"URL":"https:\/\/linkinghub.elsevier.com\/retrieve\/pii\/S0026271401000683"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2001,7]]},"references-count":6,"journal-issue":{"issue":"7","published-print":{"date-parts":[[2001,7]]}},"alternative-id":["S0026271401000683"],"URL":"https:\/\/doi.org\/10.1016\/s0026-2714(01)00068-3","relation":{},"ISSN":["0026-2714"],"issn-type":[{"value":"0026-2714","type":"print"}],"subject":[],"published":{"date-parts":[[2001,7]]}}}