{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,9,29]],"date-time":"2025-09-29T20:51:59Z","timestamp":1759179119081},"reference-count":4,"publisher":"Elsevier BV","issue":"7","license":[{"start":{"date-parts":[[2001,7,1]],"date-time":"2001-07-01T00:00:00Z","timestamp":993945600000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/www.elsevier.com\/tdm\/userlicense\/1.0\/"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Microelectronics Reliability"],"published-print":{"date-parts":[[2001,7]]},"DOI":"10.1016\/s0026-2714(01)00072-5","type":"journal-article","created":{"date-parts":[[2002,7,25]],"date-time":"2002-07-25T10:37:42Z","timestamp":1027593462000},"page":"1085-1088","source":"Crossref","is-referenced-by-count":3,"title":["Suppression of boron penetration through thin gate oxides by nitrogen implantation into the gate electrode in PMOS devices"],"prefix":"10.1016","volume":"41","author":[{"given":"S","family":"Strobel","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"A.J","family":"Bauer","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"M","family":"Beichele","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"H","family":"Ryssel","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"78","reference":[{"issue":"1","key":"10.1016\/S0026-2714(01)00072-5_BIB1","doi-asserted-by":"crossref","first-page":"417","DOI":"10.1063\/1.359343","volume":"77","author":"Aoyama","year":"1995","journal-title":"J Appl Phys"},{"key":"10.1016\/S0026-2714(01)00072-5_BIB2","doi-asserted-by":"crossref","unstructured":"Baker FK, Pfiester JR, Mele TC, Tseng HH, Tobin PJ, Hayden JD, Gunderson CD, Parrillo LC. IEDM Proc 1989. p. 443","DOI":"10.1109\/IEDM.1989.74317"},{"issue":"2","key":"10.1016\/S0026-2714(01)00072-5_BIB3","doi-asserted-by":"crossref","first-page":"213","DOI":"10.1016\/S0026-2714(97)00037-1","volume":"38","author":"Bauer","year":"1998","journal-title":"Microelectron Reliab"},{"issue":"1","key":"10.1016\/S0026-2714(01)00072-5_BIB4","doi-asserted-by":"crossref","first-page":"424","DOI":"10.1063\/1.373676","volume":"88","author":"Raynaud","year":"2000","journal-title":"J Appl Phys"}],"container-title":["Microelectronics Reliability"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/api.elsevier.com\/content\/article\/PII:S0026271401000725?httpAccept=text\/xml","content-type":"text\/xml","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/api.elsevier.com\/content\/article\/PII:S0026271401000725?httpAccept=text\/plain","content-type":"text\/plain","content-version":"vor","intended-application":"text-mining"}],"deposited":{"date-parts":[[2019,4,27]],"date-time":"2019-04-27T23:57:42Z","timestamp":1556409462000},"score":1,"resource":{"primary":{"URL":"https:\/\/linkinghub.elsevier.com\/retrieve\/pii\/S0026271401000725"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2001,7]]},"references-count":4,"journal-issue":{"issue":"7","published-print":{"date-parts":[[2001,7]]}},"alternative-id":["S0026271401000725"],"URL":"https:\/\/doi.org\/10.1016\/s0026-2714(01)00072-5","relation":{},"ISSN":["0026-2714"],"issn-type":[{"value":"0026-2714","type":"print"}],"subject":[],"published":{"date-parts":[[2001,7]]}}}