{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2022,3,30]],"date-time":"2022-03-30T13:15:57Z","timestamp":1648646157066},"reference-count":14,"publisher":"Elsevier BV","issue":"8","license":[{"start":{"date-parts":[[2001,8,1]],"date-time":"2001-08-01T00:00:00Z","timestamp":996624000000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/www.elsevier.com\/tdm\/userlicense\/1.0\/"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Microelectronics Reliability"],"published-print":{"date-parts":[[2001,8]]},"DOI":"10.1016\/s0026-2714(01)00081-6","type":"journal-article","created":{"date-parts":[[2002,10,31]],"date-time":"2002-10-31T19:50:07Z","timestamp":1036093807000},"page":"1103-1108","source":"Crossref","is-referenced-by-count":3,"title":["Degradation properties of MOVPE-grown GaInP\/GaAs HBTs under combined temperature and current stressing"],"prefix":"10.1016","volume":"41","author":[{"given":"Joachim","family":"W\u00fcrfl","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Paul","family":"Kurpas","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Frank","family":"Brunner","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Michael","family":"Mai","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Matthias","family":"Rudolph","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Markus","family":"Weyers","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"78","reference":[{"key":"10.1016\/S0026-2714(01)00081-6_BIB1","unstructured":"Yeats B, Chandler P, Culver M, D'Avanzo D, Essilfie G, Hutchinson C, Kuhn D, Shirley T, Thomas S, Whiteley W. Reliability of InGaP-emitter HBTs. Proc GaAs-MANTECH 2000. p. 131\u20136"},{"issue":"4","key":"10.1016\/S0026-2714(01)00081-6_BIB2","doi-asserted-by":"crossref","first-page":"115","DOI":"10.1109\/55.663532","article-title":"High reliablity InGaP\/GaAs HBT","volume":"19","author":"Pan","year":"1998","journal-title":"IEEE Electron Dev Lett"},{"key":"10.1016\/S0026-2714(01)00081-6_BIB3","unstructured":"Welser RE, Chaplin M, Lutz CR, Pan N, Gupta A, Vaesel B, Ezis A. Base current investigation of the long term reliability of GaAs based HBTs. Proc GaAs-MANTECH 2000. p. 145\u20138"},{"issue":"12","key":"10.1016\/S0026-2714(01)00081-6_BIB4","doi-asserted-by":"crossref","first-page":"1073","DOI":"10.1049\/el:20000782","article-title":"High performance InGaP\/GaAs HBTs for mobile communications","volume":"36","author":"Achouche","year":"2000","journal-title":"Electron Lett"},{"key":"10.1016\/S0026-2714(01)00081-6_BIB5","unstructured":"John W, Weixelbaum L, Wittrich H, Frankowski G, W\u00fcrfl J. III-V dry etching by CCD-controlled in situ interferometry. Proc GaAs-MANTECH 2000. p. 21\u20134"},{"key":"10.1016\/S0026-2714(01)00081-6_BIB6","doi-asserted-by":"crossref","first-page":"818","DOI":"10.1088\/0268-1242\/15\/8\/306","article-title":"Au\/Pt\/Ti\/Pt base contacts to n-InGaP\/p+-GaAs for self passivating HBT ledge structures","volume":"15","author":"Nebauer","year":"2000","journal-title":"Semicond Sci Technol"},{"issue":"8","key":"10.1016\/S0026-2714(01)00081-6_BIB7","doi-asserted-by":"crossref","first-page":"1846","DOI":"10.1109\/16.704388","article-title":"A simple method for the thermal resistance measurement of AlGaAs\/GaAs heterojunction bipolar transistors","volume":"45","author":"Bovolon","year":"1998","journal-title":"IEEE Trans Electron Dev"},{"key":"10.1016\/S0026-2714(01)00081-6_BIB8","doi-asserted-by":"crossref","unstructured":"Bovolon N, Schultheis R, M\u00fcller JE, Zwicknagl P. Analysis of the short-term DC-current gain variation during high current density \u2013 low temperature stress of AlGaAs\/GaAs heterojunction bipolar transistors. IEEE Trans Electron Dev 2000;47(2):274\u201381","DOI":"10.1109\/16.822267"},{"key":"10.1016\/S0026-2714(01)00081-6_BIB9","doi-asserted-by":"crossref","unstructured":"Hendersen T, Ley V, Kim T, Moise T, Hill D. Hydrogen related burn-in in GaAs\/AlGaAs HBTs and implications for reliability. IEDM Tech Dig 1996:203\u2013206","DOI":"10.1109\/IEDM.1996.553568"},{"key":"10.1016\/S0026-2714(01)00081-6_BIB10","doi-asserted-by":"crossref","first-page":"1391","DOI":"10.1016\/0038-1101(78)90215-0","article-title":"Recombination enhanced defect reactions","volume":"21","author":"Kimerling","year":"1978","journal-title":"Solid-State Electron"},{"key":"10.1016\/S0026-2714(01)00081-6_BIB11","doi-asserted-by":"crossref","unstructured":"Henderson T, et al. Models for degradation of GaAs\/AlGaAs HBTs under temperature and current stress. IEDM Tech Dig 1995:811\u2013814","DOI":"10.1109\/IEDM.1995.499341"},{"key":"10.1016\/S0026-2714(01)00081-6_BIB12","doi-asserted-by":"crossref","unstructured":"Rudolph T, Doerner R, Heymann extraction of HBT equivalent circuit elements. IEEE Trans Microwave Theory Tech 1999;47(1):82\u20134","DOI":"10.1109\/22.740081"},{"key":"10.1016\/S0026-2714(01)00081-6_BIB13","doi-asserted-by":"crossref","first-page":"1033","DOI":"10.1016\/S0026-2714(99)00143-2","article-title":"Physics of degradation in GaAs-based heterojunction bipolar transistors","volume":"39","author":"Henderson","year":"1999","journal-title":"Microelectron Reliab"},{"key":"10.1016\/S0026-2714(01)00081-6_BIB14","unstructured":"Delage SL. Hero's project as an example of European programme on RF device improvement. Proc GAAS 1999. p. 78"}],"container-title":["Microelectronics Reliability"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/api.elsevier.com\/content\/article\/PII:S0026271401000816?httpAccept=text\/xml","content-type":"text\/xml","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/api.elsevier.com\/content\/article\/PII:S0026271401000816?httpAccept=text\/plain","content-type":"text\/plain","content-version":"vor","intended-application":"text-mining"}],"deposited":{"date-parts":[[2019,4,27]],"date-time":"2019-04-27T09:50:25Z","timestamp":1556358625000},"score":1,"resource":{"primary":{"URL":"https:\/\/linkinghub.elsevier.com\/retrieve\/pii\/S0026271401000816"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2001,8]]},"references-count":14,"journal-issue":{"issue":"8","published-print":{"date-parts":[[2001,8]]}},"alternative-id":["S0026271401000816"],"URL":"https:\/\/doi.org\/10.1016\/s0026-2714(01)00081-6","relation":{},"ISSN":["0026-2714"],"issn-type":[{"value":"0026-2714","type":"print"}],"subject":[],"published":{"date-parts":[[2001,8]]}}}