{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,12,4]],"date-time":"2024-12-04T03:40:01Z","timestamp":1733283601123,"version":"3.30.1"},"reference-count":13,"publisher":"Elsevier BV","issue":"11","license":[{"start":{"date-parts":[[2001,11,1]],"date-time":"2001-11-01T00:00:00Z","timestamp":1004572800000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/www.elsevier.com\/tdm\/userlicense\/1.0\/"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Microelectronics Reliability"],"published-print":{"date-parts":[[2001,11]]},"DOI":"10.1016\/s0026-2714(01)00118-4","type":"journal-article","created":{"date-parts":[[2002,7,25]],"date-time":"2002-07-25T14:28:48Z","timestamp":1027607328000},"page":"1909-1913","source":"Crossref","is-referenced-by-count":4,"title":["A new lifetime prediction method for hot-carrier degradation in n-MOSFETs with ultrathin gate oxides under Vg=Vd"],"prefix":"10.1016","volume":"41","author":[{"given":"Fuchen","family":"Mu","sequence":"first","affiliation":[]},{"given":"Mingzhen","family":"Xu","sequence":"additional","affiliation":[]},{"given":"Changhua","family":"Tan","sequence":"additional","affiliation":[]},{"given":"Xiaorong","family":"Duan","sequence":"additional","affiliation":[]}],"member":"78","reference":[{"issue":"5","key":"10.1016\/S0026-2714(01)00118-4_BIB1","doi-asserted-by":"crossref","first-page":"1301","DOI":"10.1109\/16.108192","article-title":"A lifetime prediction method for hot-carrier degradation in surface-channel p-MOS devices","volume":"ED-37","author":"Doyle","year":"1990","journal-title":"IEEE Trans Electron Dev"},{"issue":"10","key":"10.1016\/S0026-2714(01)00118-4_BIB2","doi-asserted-by":"crossref","first-page":"2290","DOI":"10.1109\/16.158801","article-title":"Examination of gradual-junction p-MOS structures for hot carrier control using a new lifetime extraction method","volume":"ED-39","author":"Doyle","year":"1992","journal-title":"IEEE Trans Electron Dev"},{"key":"10.1016\/S0026-2714(01)00118-4_BIB3","doi-asserted-by":"crossref","unstructured":"Huang D-H, King EE. Characterization of hot-carrier-induced degradation in P-channel MOSFETs by total injected charge techniques. Proc IRPS, 1994. p. 34\u201341","DOI":"10.1109\/RELPHY.1994.307860"},{"issue":"1","key":"10.1016\/S0026-2714(01)00118-4_BIB4","doi-asserted-by":"crossref","first-page":"152","DOI":"10.1109\/16.249438","article-title":"The characterization of hot-carrier damage in p-channel transistors","volume":"ED-40","author":"Doyle","year":"1993","journal-title":"IEEE Trans Electron Dev"},{"key":"10.1016\/S0026-2714(01)00118-4_BIB5","doi-asserted-by":"crossref","unstructured":"Woltjer R, Paulzen G. A new monitor to predict hot-carrier damage of PMOS transistor. IEDM Tech Dig 1990:561\u20134","DOI":"10.1109\/IEDM.1990.237136"},{"key":"10.1016\/S0026-2714(01)00118-4_BIB6","doi-asserted-by":"crossref","unstructured":"Brox M, Wohlrab E, Weber W. A physical lifetime prediction method for hot-carrier-stressed P-MOS transistors. IEDM Tech Dig 1991:525\u20138","DOI":"10.1109\/IEDM.1991.235341"},{"issue":"5","key":"10.1016\/S0026-2714(01)00118-4_BIB7","doi-asserted-by":"crossref","first-page":"585","DOI":"10.1109\/4.229396","article-title":"Modeling and simulation of hot-carrier-induced device degradation in MOS circuits","volume":"28","author":"Leblebici","year":"1993","journal-title":"IEEE Solid-State Cir"},{"issue":"12","key":"10.1016\/S0026-2714(01)00118-4_BIB8","doi-asserted-by":"crossref","first-page":"2194","DOI":"10.1109\/16.8794","article-title":"Consistent model for the hot-carrier degradation in n-channel and p-channel MOSFET's","volume":"ED-35","author":"Heremans","year":"1988","journal-title":"IEEE Trans Electron Dev"},{"issue":"4","key":"10.1016\/S0026-2714(01)00118-4_BIB9","doi-asserted-by":"crossref","first-page":"111","DOI":"10.1109\/EDL.1983.25667","article-title":"An empirical model for device degradation due to hot-carrier injection","volume":"EDL-4","author":"Takeda","year":"1983","journal-title":"IEEE Electron Dev Lett"},{"issue":"2","key":"10.1016\/S0026-2714(01)00118-4_BIB10","first-page":"375","article-title":"Hot-electron-induced MOSFET degradation \u2013 model, monitor, and improvement","volume":"ED-32","author":"Hu","year":"1985","journal-title":"IEEE Trans Electron Dev"},{"issue":"1","key":"10.1016\/S0026-2714(01)00118-4_BIB11","doi-asserted-by":"crossref","first-page":"4","DOI":"10.1109\/55.289480","article-title":"Improved prediction of interface-trap generation in NMOSFET's","volume":"EDL-15","author":"Woltjer","year":"1994","journal-title":"IEEE Electron Dev Lett"},{"issue":"4","key":"10.1016\/S0026-2714(01)00118-4_BIB12","doi-asserted-by":"crossref","first-page":"178","DOI":"10.1109\/55.75756","article-title":"A lifetime prediction method for oxide electron trap damage created during hot-electron stressing of n-MOS transistors","volume":"EDL-12","author":"Doyle","year":"1991","journal-title":"IEEE Electron Dev Lett"},{"issue":"1","key":"10.1016\/S0026-2714(01)00118-4_BIB13","doi-asserted-by":"crossref","first-page":"96","DOI":"10.1109\/16.249430","article-title":"AC versus DC hot-carrier degradation in n-channel MOSFET's","volume":"ED-40","author":"Mistry","year":"1993","journal-title":"IEEE Trans Electron Dev"}],"container-title":["Microelectronics Reliability"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/api.elsevier.com\/content\/article\/PII:S0026271401001184?httpAccept=text\/xml","content-type":"text\/xml","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/api.elsevier.com\/content\/article\/PII:S0026271401001184?httpAccept=text\/plain","content-type":"text\/plain","content-version":"vor","intended-application":"text-mining"}],"deposited":{"date-parts":[[2024,12,4]],"date-time":"2024-12-04T02:51:35Z","timestamp":1733280695000},"score":1,"resource":{"primary":{"URL":"https:\/\/linkinghub.elsevier.com\/retrieve\/pii\/S0026271401001184"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2001,11]]},"references-count":13,"journal-issue":{"issue":"11","published-print":{"date-parts":[[2001,11]]}},"alternative-id":["S0026271401001184"],"URL":"https:\/\/doi.org\/10.1016\/s0026-2714(01)00118-4","relation":{},"ISSN":["0026-2714"],"issn-type":[{"type":"print","value":"0026-2714"}],"subject":[],"published":{"date-parts":[[2001,11]]}}}