{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,10,6]],"date-time":"2025-10-06T19:10:21Z","timestamp":1759777821964,"version":"3.30.1"},"reference-count":26,"publisher":"Elsevier BV","issue":"12","license":[{"start":{"date-parts":[[2001,12,1]],"date-time":"2001-12-01T00:00:00Z","timestamp":1007164800000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/www.elsevier.com\/tdm\/userlicense\/1.0\/"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Microelectronics Reliability"],"published-print":{"date-parts":[[2001,12]]},"DOI":"10.1016\/s0026-2714(01)00120-2","type":"journal-article","created":{"date-parts":[[2002,10,14]],"date-time":"2002-10-14T22:58:33Z","timestamp":1034636313000},"page":"1923-1931","source":"Crossref","is-referenced-by-count":40,"title":["Degradation of thin oxides during electrical stress"],"prefix":"10.1016","volume":"41","author":[{"given":"Gennadi","family":"Bersuker","sequence":"first","affiliation":[]},{"given":"Yongjoo","family":"Jeon","sequence":"additional","affiliation":[]},{"given":"Howard R","family":"Huff","sequence":"additional","affiliation":[]}],"member":"78","reference":[{"key":"10.1016\/S0026-2714(01)00120-2_BIB1","unstructured":"McPherson JW, Mogul HC. IEEE-IRPS Proceedings 1998. p. 47"},{"key":"10.1016\/S0026-2714(01)00120-2_BIB2","doi-asserted-by":"crossref","first-page":"5351","DOI":"10.1063\/1.1318369","volume":"88","author":"McPherson","year":"2000","journal-title":"J Appl Phys"},{"key":"10.1016\/S0026-2714(01)00120-2_BIB3","doi-asserted-by":"crossref","unstructured":"Schuegraf KE, Hu C. IEEE-El Dev 1994;41:761","DOI":"10.1109\/16.285029"},{"key":"10.1016\/S0026-2714(01)00120-2_BIB4","doi-asserted-by":"crossref","first-page":"2342","DOI":"10.1063\/1.342824","volume":"65","author":"DiMaria","year":"1989","journal-title":"J Appl Phys"},{"key":"10.1016\/S0026-2714(01)00120-2_BIB5","unstructured":"Alam MA et al. The physics and chemistry of SiO2\/Si interface. ECS Proceedings 2000;2000-2:295"},{"key":"10.1016\/S0026-2714(01)00120-2_BIB6","unstructured":"Stathis JH. IEEE-IRPS 2001:132"},{"key":"10.1016\/S0026-2714(01)00120-2_BIB7","doi-asserted-by":"crossref","first-page":"1298","DOI":"10.1103\/PhysRevLett.85.1298","volume":"85","author":"Neaton","year":"2000","journal-title":"Phys Rev Lett"},{"key":"10.1016\/S0026-2714(01)00120-2_BIB8","unstructured":"Watanabe T, Ohdomari I. The physics and chemistry of SiO2\/Si interface. ECS Proceedings 2000;2000-2:319"},{"key":"10.1016\/S0026-2714(01)00120-2_BIB9","doi-asserted-by":"crossref","first-page":"58","DOI":"10.1038\/23908","volume":"396","author":"Pasquarello","year":"1998","journal-title":"Nature"},{"key":"10.1016\/S0026-2714(01)00120-2_BIB10","unstructured":"Yamasaki T et al. The physics and chemistry of SiO2\/Si interface. ECS Proceedings 2000;2000-2:295"},{"key":"10.1016\/S0026-2714(01)00120-2_BIB11","doi-asserted-by":"crossref","first-page":"758","DOI":"10.1038\/21602","volume":"399","author":"Muller","year":"1999","journal-title":"Nature"},{"key":"10.1016\/S0026-2714(01)00120-2_BIB12","doi-asserted-by":"crossref","first-page":"4687","DOI":"10.1143\/JJAP.39.4687","volume":"39","author":"Harada","year":"2000","journal-title":"Jpn J Appl Phys"},{"key":"10.1016\/S0026-2714(01)00120-2_BIB13","doi-asserted-by":"crossref","unstructured":"DiMaria JD. IEEE El Dev Lett 1995;16:184","DOI":"10.1109\/55.382234"},{"key":"10.1016\/S0026-2714(01)00120-2_BIB14","doi-asserted-by":"crossref","unstructured":"Bersuker G, Werking J. In: Gupta DC, Brown GA, editors. Gate dielectric integrity. ASTM STP 2000, vol. 1382. p. 47","DOI":"10.1520\/STP13483S"},{"key":"10.1016\/S0026-2714(01)00120-2_BIB15","unstructured":"Bersuker G, Jeon Y, Gale G, Guan J, Huff HR. IEEE-IRW final report 2000. p. 107"},{"key":"10.1016\/S0026-2714(01)00120-2_BIB16","unstructured":"Bersuker G, Jeon Y, Huff HR. Workshop on Dielectrics in Microelectronics, Munich, 2000. p. 52"},{"key":"10.1016\/S0026-2714(01)00120-2_BIB17","unstructured":"Bersuker G, Korkin A, Huff HR. E-MRS 2001 Spring Meeting, Strasbourg, June 2001. p. A-18"},{"key":"10.1016\/S0026-2714(01)00120-2_BIB18","unstructured":"Ma TP, Dressendorfer PV. Ionizing radiation defects in MOS devices and circuits. NY, 1989"},{"key":"10.1016\/S0026-2714(01)00120-2_BIB19","doi-asserted-by":"crossref","unstructured":"Lenahan PM, Conley Jr JF. J Vac Sci Tech B 1998;16:2134","DOI":"10.1116\/1.590301"},{"key":"10.1016\/S0026-2714(01)00120-2_BIB20","unstructured":"Degraeve R et al. IEDM Tech Digest 1995. p. 863"},{"key":"10.1016\/S0026-2714(01)00120-2_BIB21","unstructured":"Hauser JR, Ahmed K. In: Seiler DG, Diebold AC, Bullis WM, Shaffner TJ, McDonald R, Walters EJ, editors. Characterization and metrology for ULSI technology. 1998. p. 235"},{"key":"10.1016\/S0026-2714(01)00120-2_BIB22","unstructured":"Stathis JH, DiMaria DJ. IEDM Tech Digest 1998. p. 167"},{"key":"10.1016\/S0026-2714(01)00120-2_BIB23","doi-asserted-by":"crossref","unstructured":"Helms CR, Poindexter EH. Rep Prog Phys 1994:791","DOI":"10.1088\/0034-4885\/57\/8\/002"},{"key":"10.1016\/S0026-2714(01)00120-2_BIB24","doi-asserted-by":"crossref","first-page":"8707","DOI":"10.1063\/1.373600","volume":"87","author":"DiMaria","year":"2000","journal-title":"J Appl Phys"},{"key":"10.1016\/S0026-2714(01)00120-2_BIB25","doi-asserted-by":"crossref","unstructured":"Yokozawa A et al. IEDM Tech Digest 1997. p. 703","DOI":"10.1109\/IEDM.1997.650480"},{"key":"10.1016\/S0026-2714(01)00120-2_BIB26","doi-asserted-by":"crossref","first-page":"6158","DOI":"10.1103\/PhysRevB.62.6158","volume":"62","author":"Blochl","year":"2000","journal-title":"Phys Rev B"}],"container-title":["Microelectronics Reliability"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/api.elsevier.com\/content\/article\/PII:S0026271401001202?httpAccept=text\/xml","content-type":"text\/xml","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/api.elsevier.com\/content\/article\/PII:S0026271401001202?httpAccept=text\/plain","content-type":"text\/plain","content-version":"vor","intended-application":"text-mining"}],"deposited":{"date-parts":[[2024,12,3]],"date-time":"2024-12-03T13:44:39Z","timestamp":1733233479000},"score":1,"resource":{"primary":{"URL":"https:\/\/linkinghub.elsevier.com\/retrieve\/pii\/S0026271401001202"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2001,12]]},"references-count":26,"journal-issue":{"issue":"12","published-print":{"date-parts":[[2001,12]]}},"alternative-id":["S0026271401001202"],"URL":"https:\/\/doi.org\/10.1016\/s0026-2714(01)00120-2","relation":{},"ISSN":["0026-2714"],"issn-type":[{"type":"print","value":"0026-2714"}],"subject":[],"published":{"date-parts":[[2001,12]]}}}