{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,7,5]],"date-time":"2024-07-05T23:35:13Z","timestamp":1720222513872},"reference-count":25,"publisher":"Elsevier BV","issue":"1","license":[{"start":{"date-parts":[[2002,1,1]],"date-time":"2002-01-01T00:00:00Z","timestamp":1009843200000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/www.elsevier.com\/tdm\/userlicense\/1.0\/"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Microelectronics Reliability"],"published-print":{"date-parts":[[2002,1]]},"DOI":"10.1016\/s0026-2714(01)00131-7","type":"journal-article","created":{"date-parts":[[2002,10,14]],"date-time":"2002-10-14T18:58:33Z","timestamp":1034621913000},"page":"67-76","source":"Crossref","is-referenced-by-count":5,"title":["Quasi-three-dimensional spice-based simulation of the transient behavior, including plasma spread, of thyristors and over-voltage protectors"],"prefix":"10.1016","volume":"42","author":[{"given":"Rodolfo","family":"Quintero","sequence":"first","affiliation":[]},{"given":"Antonio","family":"Cerdeira","sequence":"additional","affiliation":[]},{"given":"Adelmo","family":"Ort\u0131\u0301z-Conde","sequence":"additional","affiliation":[]}],"member":"78","reference":[{"issue":"2","key":"10.1016\/S0026-2714(01)00131-7_BIB1","doi-asserted-by":"crossref","first-page":"483","DOI":"10.1109\/T-ED.1980.19887","article-title":"The dynamics of the thyristor turn-on process","volume":"ED-27","author":"Adler","year":"1980","journal-title":"IEEE Trans Electron Dev"},{"key":"10.1016\/S0026-2714(01)00131-7_BIB2","doi-asserted-by":"crossref","unstructured":"Kraus R, Mattausch HJ. Status and trends of power semiconductor device models for circuit simulation. IEEE Trans Power Electron 1998;13(3)","DOI":"10.1109\/63.668107"},{"issue":"5","key":"10.1016\/S0026-2714(01)00131-7_BIB3","doi-asserted-by":"crossref","first-page":"497","DOI":"10.1109\/63.321035","article-title":"A unified method for modeling semiconductor power devices","volume":"9","author":"Goebel","year":"1994","journal-title":"IEEE Trans Power Electron"},{"issue":"9","key":"10.1016\/S0026-2714(01)00131-7_BIB4","doi-asserted-by":"crossref","first-page":"1901","DOI":"10.1109\/16.784192","article-title":"A fast CAD model of lasma spread in thyristors using a seminumerical time-domain approach","volume":"ED-46","author":"El-Saba","year":"1999","journal-title":"IEEE Trans Electron Dev"},{"key":"10.1016\/S0026-2714(01)00131-7_BIB5","unstructured":"Quintero R, Cerdeira A. Circuit simulation of electrical transient behavior of four-layer power devices. SBMicro2000 \u2013 15th International Conference on Microelectronics and Packaging, Manaos, Brazil, 18\u201324 September 2000"},{"issue":"1","key":"10.1016\/S0026-2714(01)00131-7_BIB6","doi-asserted-by":"crossref","first-page":"30","DOI":"10.1109\/15.748134","article-title":"An optimized bidirectional lighting surge protection semiconuctor device","volume":"41","author":"Flores","year":"1999","journal-title":"IEEE Trans Electromag Compat"},{"issue":"2","key":"10.1016\/S0026-2714(01)00131-7_BIB7","doi-asserted-by":"crossref","first-page":"104","DOI":"10.1109\/T-ED.1983.21082","article-title":"Investigation of the lateral turn-on process of thyristors with an epitaxial p-base","volume":"ED-30","author":"Zekry","year":"1983","journal-title":"IEEE Trans Electron Dev"},{"key":"10.1016\/S0026-2714(01)00131-7_BIB8","doi-asserted-by":"crossref","first-page":"827","DOI":"10.1002\/j.1538-7305.1970.tb01803.x","article-title":"An integral charge control model of bipolar transistors","volume":"49","author":"Gummel","year":"1970","journal-title":"Bell Sys Techn J"},{"key":"10.1016\/S0026-2714(01)00131-7_BIB9","unstructured":"Getreu I. Modeling the bipolar transistor. New York: Elsevier; 1978"},{"key":"10.1016\/S0026-2714(01)00131-7_BIB10","doi-asserted-by":"crossref","unstructured":"McAndrew CC, Seitchik JA, Bowers DF, Dunn M, Foisy M, Getreu I, McSwain M, Moinian S, Parker J, Roulston DJ, Schroter M, van Wijnen P, Wagner LF. VBIC95, the vertical bipolar inter-company model. IEEE J Solid-State Circ 1996;31(10):1476\u201383","DOI":"10.1109\/4.540058"},{"issue":"2","key":"10.1016\/S0026-2714(01)00131-7_BIB11","doi-asserted-by":"crossref","first-page":"427","DOI":"10.1109\/16.822290","article-title":"Comparison of the new VBIC and conventional Gummel\u2013Poon bipolar transistor models","volume":"47","author":"Cao","year":"2000","journal-title":"IEEE Trans Electron Dev"},{"issue":"6","key":"10.1016\/S0026-2714(01)00131-7_BIB12","doi-asserted-by":"crossref","first-page":"334","DOI":"10.1109\/T-ED.1975.18132","article-title":"Bipolar transistor modeling of avalanche generation for computer circuit simulation","volume":"ED-22","author":"Dutton","year":"1975","journal-title":"IEEE Trans Electron Dev"},{"key":"10.1016\/S0026-2714(01)00131-7_BIB13","unstructured":"Orcard PSpice ver. 9.1. Orcard release 9 online manuals and quick reference cards. [www.pspice.com]"},{"issue":"6","key":"10.1016\/S0026-2714(01)00131-7_BIB14","first-page":"1113","article-title":"A unified circuit model for bipolar transistors including quasi-saturation effects","volume":"ED-32","author":"Kull","year":"1985","journal-title":"IEEE Trans Electron Dev"},{"key":"10.1016\/S0026-2714(01)00131-7_BIB15","unstructured":"Athena process simulator, Silvaco International"},{"key":"10.1016\/S0026-2714(01)00131-7_BIB16","unstructured":"Atlas device simulator, Silvaco International"},{"issue":"5","key":"10.1016\/S0026-2714(01)00131-7_BIB17","doi-asserted-by":"crossref","first-page":"727","DOI":"10.1016\/S0038-1101(97)00294-3","article-title":"New method for the determination of carrier lifetime in diodes using a sinusoidal current pulse","volume":"42","author":"Cerdeira","year":"1998","journal-title":"Solid-State Electron"},{"issue":"8","key":"10.1016\/S0026-2714(01)00131-7_BIB18","doi-asserted-by":"crossref","first-page":"917","DOI":"10.1109\/T-ED.1976.18509","article-title":"Optimum design of thyristor gate-emitter geometry","volume":"ED-23","author":"Munoz-Yague","year":"1976","journal-title":"IEEE Trans Electron Dev"},{"key":"10.1016\/S0026-2714(01)00131-7_BIB19","unstructured":"Atkinson KE. An introduction to numerical analysis. New York: Wiley; 1978. p. 482"},{"key":"10.1016\/S0026-2714(01)00131-7_BIB20","unstructured":"Baliga BJ. Power semiconductor devices. PWS Publishing Company; 1996. p. 267"},{"key":"10.1016\/S0026-2714(01)00131-7_BIB21","doi-asserted-by":"crossref","first-page":"1861","DOI":"10.1016\/S0038-1101(00)00132-5","article-title":"Exact analytical solutions of the forward non-ideal diode equation with series and shunt parasitic resistances","volume":"44","author":"Ortiz-Conde","year":"2000","journal-title":"Solid-State Electron"},{"issue":"2","key":"10.1016\/S0026-2714(01)00131-7_BIB22","doi-asserted-by":"crossref","first-page":"495","DOI":"10.1109\/T-ED.1980.19888","article-title":"Details of the plasma-spreadidng process in thyrisors","volume":"ED-27","author":"Adler","year":"1980","journal-title":"IEEE Trans Electron Dev"},{"key":"10.1016\/S0026-2714(01)00131-7_BIB23","doi-asserted-by":"crossref","unstructured":"H\u00e9bert F, Roulston DJ. Unified model for bipolar transistors including the voltage and current dependence of the base and collector resistances as well as the breakdown limits. J de Physique, Colloque C4, suppl\u00e9ment au no 9, Tome 49, Septembre 1988","DOI":"10.1051\/jphyscol:1988477"},{"issue":"10","key":"10.1016\/S0026-2714(01)00131-7_BIB24","doi-asserted-by":"crossref","first-page":"1696","DOI":"10.1109\/16.7376","article-title":"Voltage- and current-dependent model for the base resistance of bipolar transistors","volume":"35","author":"H\u00e9bert","year":"1988","journal-title":"IEEE Trans Electron Dev"},{"key":"10.1016\/S0026-2714(01)00131-7_BIB25","unstructured":"Wolfram S. The Mathematica Book: A system for doing mathematics by computer. 4th ed. Reading, MA: Addison Wesley [www.wolfram.com]"}],"container-title":["Microelectronics Reliability"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/api.elsevier.com\/content\/article\/PII:S0026271401001317?httpAccept=text\/xml","content-type":"text\/xml","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/api.elsevier.com\/content\/article\/PII:S0026271401001317?httpAccept=text\/plain","content-type":"text\/plain","content-version":"vor","intended-application":"text-mining"}],"deposited":{"date-parts":[[2020,1,7]],"date-time":"2020-01-07T20:53:54Z","timestamp":1578430434000},"score":1,"resource":{"primary":{"URL":"https:\/\/linkinghub.elsevier.com\/retrieve\/pii\/S0026271401001317"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2002,1]]},"references-count":25,"journal-issue":{"issue":"1","published-print":{"date-parts":[[2002,1]]}},"alternative-id":["S0026271401001317"],"URL":"https:\/\/doi.org\/10.1016\/s0026-2714(01)00131-7","relation":{},"ISSN":["0026-2714"],"issn-type":[{"value":"0026-2714","type":"print"}],"subject":[],"published":{"date-parts":[[2002,1]]}}}