{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2022,3,29]],"date-time":"2022-03-29T21:00:25Z","timestamp":1648587625726},"reference-count":10,"publisher":"Elsevier BV","issue":"1","license":[{"start":{"date-parts":[[2002,1,1]],"date-time":"2002-01-01T00:00:00Z","timestamp":1009843200000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/www.elsevier.com\/tdm\/userlicense\/1.0\/"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Microelectronics Reliability"],"published-print":{"date-parts":[[2002,1]]},"DOI":"10.1016\/s0026-2714(01)00133-0","type":"journal-article","created":{"date-parts":[[2002,10,14]],"date-time":"2002-10-14T22:58:33Z","timestamp":1034636313000},"page":"141-143","source":"Crossref","is-referenced-by-count":2,"title":["A reliability of different metal contacts with amorphous carbon"],"prefix":"10.1016","volume":"42","author":[{"given":"S","family":"Paul","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"F.J","family":"Clough","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"78","reference":[{"key":"10.1016\/S0026-2714(01)00133-0_BIB1","doi-asserted-by":"crossref","first-page":"1734","DOI":"10.1016\/S0925-9635(98)00313-6","article-title":"Schottky barrier formation on rf-plasma enhanced chemical vapour deposited hydrogenated amorphous carbon","volume":"7","author":"Paul","year":"1998","journal-title":"Diamond Rel Mater"},{"key":"10.1016\/S0026-2714(01)00133-0_BIB2","doi-asserted-by":"crossref","first-page":"879","DOI":"10.1016\/S0925-9635(96)00676-0","article-title":"Diamond-like carbon metal\u2013semiconductor\u2013metal switches for active matrix displays","volume":"6","author":"Egret","year":"1997","journal-title":"Diamond Rel Mater"},{"key":"10.1016\/S0026-2714(01)00133-0_BIB3","first-page":"163","article-title":"Metal\/DLC\/metal switches for active matrix flat panel displays \u2013 current status and optimisation","volume":"2","author":"Clough","year":"1999","journal-title":"Recent Res Devel Appl Phys"},{"key":"10.1016\/S0026-2714(01)00133-0_BIB4","unstructured":"Grill A, Patel V, Jahnes C. Novel low-k dielectrics based on DLC materials. Proceedings of the Fifth International Symposium on Diamond Materials. Electrochem Soc Ser 1998;97(32):512\u201320"},{"key":"10.1016\/S0026-2714(01)00133-0_BIB5","unstructured":"Endo K. European Patent Application, EP 0 701 283 A2, 1995"},{"key":"10.1016\/S0026-2714(01)00133-0_BIB6","doi-asserted-by":"crossref","first-page":"149","DOI":"10.1557\/PROC-558-149","article-title":"Substrate sensitivity of adhesion and material properties of RF-PECVD amorphous carbon","volume":"558","author":"Paul","year":"1999","journal-title":"MRS Symp Proc"},{"issue":"6","key":"10.1016\/S0026-2714(01)00133-0_BIB7","doi-asserted-by":"crossref","first-page":"2397","DOI":"10.1116\/1.591102","article-title":"Fluorinated amorphous carbon films for low permittivity interlevel dielectrics","volume":"17","author":"Theil","year":"1999","journal-title":"J Vac Sci Technol B"},{"key":"10.1016\/S0026-2714(01)00133-0_BIB8","doi-asserted-by":"crossref","first-page":"427","DOI":"10.1016\/S0038-1101(98)00257-3","article-title":"Electrical behaviour of metal\/tetrahedral amorphous carbon\/metal structure","volume":"43","author":"Liu","year":"1999","journal-title":"Solid-State Electron: Int J"},{"key":"10.1016\/S0026-2714(01)00133-0_BIB9","doi-asserted-by":"crossref","first-page":"7151","DOI":"10.1143\/JJAP.38.7151","article-title":"Focused ion beam process for formation of a metal\/insulator\/metal double tunnel junction","volume":"38","author":"Nakayama","year":"1999","journal-title":"Jpn J Appl Phys, Part I"},{"key":"10.1016\/S0026-2714(01)00133-0_BIB10","doi-asserted-by":"crossref","first-page":"5374","DOI":"10.1063\/1.350219","article-title":"Influence of dc bias voltage on the refractive index and stress of carbon\u2013diamond films deposited from a CH4\/Ar rf plasma","volume":"70","author":"Amaratunga","year":"1991","journal-title":"J Appl Phys"}],"container-title":["Microelectronics Reliability"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/api.elsevier.com\/content\/article\/PII:S0026271401001330?httpAccept=text\/xml","content-type":"text\/xml","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/api.elsevier.com\/content\/article\/PII:S0026271401001330?httpAccept=text\/plain","content-type":"text\/plain","content-version":"vor","intended-application":"text-mining"}],"deposited":{"date-parts":[[2019,5,3]],"date-time":"2019-05-03T07:58:11Z","timestamp":1556870291000},"score":1,"resource":{"primary":{"URL":"https:\/\/linkinghub.elsevier.com\/retrieve\/pii\/S0026271401001330"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2002,1]]},"references-count":10,"journal-issue":{"issue":"1","published-print":{"date-parts":[[2002,1]]}},"alternative-id":["S0026271401001330"],"URL":"https:\/\/doi.org\/10.1016\/s0026-2714(01)00133-0","relation":{},"ISSN":["0026-2714"],"issn-type":[{"value":"0026-2714","type":"print"}],"subject":[],"published":{"date-parts":[[2002,1]]}}}