{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2022,6,9]],"date-time":"2022-06-09T01:07:27Z","timestamp":1654736847854},"reference-count":14,"publisher":"Elsevier BV","issue":"3","license":[{"start":{"date-parts":[[2002,3,1]],"date-time":"2002-03-01T00:00:00Z","timestamp":1014940800000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/www.elsevier.com\/tdm\/userlicense\/1.0\/"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Microelectronics Reliability"],"published-print":{"date-parts":[[2002,3]]},"DOI":"10.1016\/s0026-2714(01)00261-x","type":"journal-article","created":{"date-parts":[[2002,10,14]],"date-time":"2002-10-14T18:58:33Z","timestamp":1034621913000},"page":"335-341","source":"Crossref","is-referenced-by-count":4,"title":["A new empirical extrapolation method for time-dependent dielectric breakdown reliability projections of thin SiO2 and nitride\u2013oxide dielectrics"],"prefix":"10.1016","volume":"42","author":[{"given":"Fen","family":"Chen","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Rolf-Peter","family":"Vollertsen","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Baozhen","family":"Li","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Dave","family":"Harmon","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Wing L.","family":"Lai","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"78","reference":[{"key":"10.1016\/S0026-2714(01)00261-X_BIB1","doi-asserted-by":"crossref","first-page":"455","DOI":"10.1088\/0268-1242\/15\/5\/304","volume":"15","author":"Weir","year":"2000","journal-title":"Semicond Sci Technol"},{"key":"10.1016\/S0026-2714(01)00261-X_BIB2","doi-asserted-by":"crossref","first-page":"436","DOI":"10.1088\/0268-1242\/15\/5\/302","volume":"15","author":"Degraeve","year":"2000","journal-title":"Semicond Sci Technol"},{"key":"10.1016\/S0026-2714(01)00261-X_BIB3","doi-asserted-by":"crossref","first-page":"2427","DOI":"10.1063\/1.125036","volume":"75","author":"DiMaria","year":"1999","journal-title":"Appl Phys Lett"},{"key":"10.1016\/S0026-2714(01)00261-X_BIB4","first-page":"1","author":"McPherson","year":"1985","journal-title":"Int Rel Phys Symp (1985)"},{"key":"10.1016\/S0026-2714(01)00261-X_BIB5","doi-asserted-by":"crossref","first-page":"140","DOI":"10.1109\/EDL.1987.26580","volume":"8","author":"Chen","year":"1987","journal-title":"IEEE Electron Device Lett"},{"key":"10.1016\/S0026-2714(01)00261-X_BIB6","doi-asserted-by":"crossref","first-page":"5351","DOI":"10.1063\/1.1318369","volume":"88","author":"McPherson","year":"2000","journal-title":"J Appl Phys"},{"key":"10.1016\/S0026-2714(01)00261-X_BIB7","first-page":"47","author":"Hu","year":"1999","journal-title":"Int Rel Phys Symp"},{"key":"10.1016\/S0026-2714(01)00261-X_BIB8","first-page":"21","author":"Alam","year":"2000","journal-title":"Int Rel Phys Symp (2000)"},{"key":"10.1016\/S0026-2714(01)00261-X_BIB9","doi-asserted-by":"crossref","first-page":"120","DOI":"10.1109\/RELPHY.1994.307847","author":"Suehle","year":"1994","journal-title":"Int Rel Phys Symp (1994)"},{"key":"10.1016\/S0026-2714(01)00261-X_BIB10","first-page":"158","author":"Okada","year":"1998","journal-title":"Symp VLSI Technol"},{"issue":"Part 2","key":"10.1016\/S0026-2714(01)00261-X_BIB11","first-page":"11","volume":"80","author":"Umeda","year":"1997","journal-title":"Electron Commun Jpn"},{"key":"10.1016\/S0026-2714(01)00261-X_BIB12","first-page":"541","author":"Wu","year":"2000","journal-title":"IEDM Tech Dig"},{"key":"10.1016\/S0026-2714(01)00261-X_BIB13","first-page":"445","author":"Okada","year":"1999","journal-title":"IEDM Tech Dig"},{"key":"10.1016\/S0026-2714(01)00261-X_BIB14","doi-asserted-by":"crossref","first-page":"1898","DOI":"10.1063\/1.1383576","volume":"90","author":"Chen","year":"2001","journal-title":"J Appl Phys"}],"container-title":["Microelectronics Reliability"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/api.elsevier.com\/content\/article\/PII:S002627140100261X?httpAccept=text\/xml","content-type":"text\/xml","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/api.elsevier.com\/content\/article\/PII:S002627140100261X?httpAccept=text\/plain","content-type":"text\/plain","content-version":"vor","intended-application":"text-mining"}],"deposited":{"date-parts":[[2019,4,28]],"date-time":"2019-04-28T17:55:41Z","timestamp":1556474141000},"score":1,"resource":{"primary":{"URL":"https:\/\/linkinghub.elsevier.com\/retrieve\/pii\/S002627140100261X"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2002,3]]},"references-count":14,"journal-issue":{"issue":"3","published-print":{"date-parts":[[2002,3]]}},"alternative-id":["S002627140100261X"],"URL":"https:\/\/doi.org\/10.1016\/s0026-2714(01)00261-x","relation":{},"ISSN":["0026-2714"],"issn-type":[{"value":"0026-2714","type":"print"}],"subject":[],"published":{"date-parts":[[2002,3]]}}}