{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2023,12,8]],"date-time":"2023-12-08T12:20:48Z","timestamp":1702038048383},"reference-count":32,"publisher":"Elsevier BV","issue":"4-5","license":[{"start":{"date-parts":[[2002,4,1]],"date-time":"2002-04-01T00:00:00Z","timestamp":1017619200000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/www.elsevier.com\/tdm\/userlicense\/1.0\/"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Microelectronics Reliability"],"published-print":{"date-parts":[[2002,4]]},"DOI":"10.1016\/s0026-2714(02)00039-2","type":"journal-article","created":{"date-parts":[[2002,10,14]],"date-time":"2002-10-14T18:58:33Z","timestamp":1034621913000},"page":"669-677","source":"Crossref","is-referenced-by-count":19,"title":["Effects of high electric field and elevated-temperature bias stressing on radiation response in power VDMOSFETs"],"prefix":"10.1016","volume":"42","author":[{"given":"N.","family":"Stojadinovic","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"I.","family":"Manic","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"S.","family":"Djoric-Veljkovic","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"V.","family":"Davidovic","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"S.","family":"Golubovic","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"S.","family":"Dimitrijev","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"78","reference":[{"key":"10.1016\/S0026-2714(02)00039-2_BIB1","doi-asserted-by":"crossref","first-page":"17","DOI":"10.1016\/S0026-2714(99)00225-5","article-title":"An overview of radiation effects on electronics in the space telecommunications environment","volume":"40","author":"Fleetwood","year":"2000","journal-title":"Microelectron Reliab"},{"key":"10.1016\/S0026-2714(02)00039-2_BIB2","doi-asserted-by":"crossref","first-page":"67","DOI":"10.1016\/0026-2692(90)90027-Z","article-title":"MOS device degradation due to total dose ionizing radiation in the natural space environment: a review","volume":"21","author":"Galloway","year":"1990","journal-title":"Microelectron J"},{"key":"10.1016\/S0026-2714(02)00039-2_BIB3","doi-asserted-by":"crossref","first-page":"2910","DOI":"10.1063\/1.353021","article-title":"Radiation-induced mobility degradation in p-channel double-diffused metal-oxide-semiconductor power transistors at 300 and 77 K","volume":"73","author":"Zupac","year":"1993","journal-title":"J Appl Phys"},{"key":"10.1016\/S0026-2714(02)00039-2_BIB4","doi-asserted-by":"crossref","first-page":"587","DOI":"10.1016\/0026-2714(95)93077-N","article-title":"Analysis of gamma-irradiation induced degradation mechanisms in power VDMOSFETs","volume":"35","author":"Stojadinovic","year":"1995","journal-title":"Microelectron Reliab"},{"key":"10.1016\/S0026-2714(02)00039-2_BIB5","doi-asserted-by":"crossref","first-page":"641","DOI":"10.1109\/23.856492","article-title":"Radiation hardening of power VDMOSFETs using electrical stress","volume":"47","author":"Picard","year":"2000","journal-title":"IEEE Trans Nucl Sci"},{"key":"10.1016\/S0026-2714(02)00039-2_BIB6","doi-asserted-by":"crossref","first-page":"1647","DOI":"10.1016\/S0026-2714(00)00182-7","article-title":"Use of electrical stress and isochronal annealing on power MOSFETs in order to characterize the effects of 60Co irradiation","volume":"40","author":"Picard","year":"2000","journal-title":"Microelectron Reliab"},{"key":"10.1016\/S0026-2714(02)00039-2_BIB7","doi-asserted-by":"crossref","first-page":"1007","DOI":"10.1016\/S0026-2714(01)00058-0","article-title":"Ultra-thick gate oxides: charge generation and its impact on reliability","volume":"41","author":"Schwalke","year":"2001","journal-title":"Microelectron Reliab"},{"key":"10.1016\/S0026-2714(02)00039-2_BIB8","doi-asserted-by":"crossref","first-page":"1015","DOI":"10.1016\/S0026-2714(01)00060-9","article-title":"The electron irradiation effects on silicon gate dioxide used for power MOS devices","volume":"41","author":"Badila","year":"2001","journal-title":"Microelectron Reliab"},{"key":"10.1016\/S0026-2714(02)00039-2_BIB9","doi-asserted-by":"crossref","first-page":"371","DOI":"10.1016\/0026-2714(89)90623-9","article-title":"Instabilities in MOS transistors","volume":"29","author":"Stojadinovic","year":"1989","journal-title":"Microelectron Reliab"},{"key":"10.1016\/S0026-2714(02)00039-2_BIB10","unstructured":"TMOS Power MOSFET, Selector Guide, Cross Reference and Reliability Data, Motorola Inc., 1985"},{"key":"10.1016\/S0026-2714(02)00039-2_BIB11","doi-asserted-by":"crossref","unstructured":"Tosic N, Pesic B, Stojadinovic N. High temperature storage life (HTSL) and high temperature reverse bias (HTRB) reliability testing of power VDMOSFETs. Proceedings of the 20th MIEL'95 Conf. Nis, 1995. p. 285\u20138","DOI":"10.1109\/ICMEL.1995.500882"},{"key":"10.1016\/S0026-2714(02)00039-2_BIB12","unstructured":"Pesic B, Tosic N, Prijic Z, Pavlovic Z, Stojadinovic N. Reliability of power VDMOS transistors. Proceedings of the Sixth ESREF'95 Conference Bordeaux, 1995. p. 111\u20136"},{"key":"10.1016\/S0026-2714(02)00039-2_BIB13","doi-asserted-by":"crossref","unstructured":"Tosic N, Pesic B, Stojadinovic N. Investigation of failure mechanisms in power VDMOSFETs. Proceedings of the Sixth IPFA'97 Conference, Singapore, 1997. p. 191\u20135","DOI":"10.1109\/IPFA.1997.638198"},{"key":"10.1016\/S0026-2714(02)00039-2_BIB14","doi-asserted-by":"crossref","first-page":"1307","DOI":"10.1109\/23.273537","article-title":"Separation of effects of oxide-trapped charge and interface-trapped charge on mobility in irradiated power MOSFETs","volume":"40","author":"Zupac","year":"1993","journal-title":"IEEE Trans. Nucl. Sci"},{"key":"10.1016\/S0026-2714(02)00039-2_BIB15","doi-asserted-by":"crossref","first-page":"2560","DOI":"10.1109\/23.340616","article-title":"Evaluation of method for estimating low-dose-rate irradiation response of MOSFETs","volume":"41","author":"Khosropour","year":"1994","journal-title":"IEEE Trans Nucl Sci"},{"key":"10.1016\/S0026-2714(02)00039-2_BIB16","doi-asserted-by":"crossref","first-page":"2550","DOI":"10.1109\/23.340615","article-title":"Effects of burn-in on radiation hardness","volume":"41","author":"Shaneyfelt","year":"1994","journal-title":"IEEE Trans Nucl Sci"},{"key":"10.1016\/S0026-2714(02)00039-2_BIB17","doi-asserted-by":"crossref","first-page":"865","DOI":"10.1109\/23.510726","article-title":"Effects of reliability screens on MOS charge trapping","volume":"43","author":"Shaneyfelt","year":"1996","journal-title":"IEEE Trans Nucl Sci"},{"key":"10.1016\/S0026-2714(02)00039-2_BIB18","doi-asserted-by":"crossref","unstructured":"Stojadinovic N, Djoric-Veljkovic S, Manic I, Davidovic V, Golubovic S. Effects of positive gate bias stress on radiation response in power VDMOSFETs. To be published in Proceedings of the 23rd MIEL'02 Conference, Nis, 2002","DOI":"10.1109\/MIEL.2002.1003359"},{"key":"10.1016\/S0026-2714(02)00039-2_BIB19","doi-asserted-by":"crossref","unstructured":"Stojadinovic N, Djoric-Veljkovic S, Manic I, Davidovic V, Golubovic S. Effects of elevated-temperature bias stressing on radiation response in power VDMOSFETs. Proceedings of the Eighth IPFA'01 Conference, Singapore, 2001. p. 243\u20138","DOI":"10.1109\/IPFA.2001.941495"},{"key":"10.1016\/S0026-2714(02)00039-2_BIB20","doi-asserted-by":"crossref","first-page":"1373","DOI":"10.1016\/S0026-2714(01)00143-3","article-title":"Mechanisms of positive gate bias stress induced instabilities in power VDMOSFETs","volume":"41","author":"Stojadinovic","year":"2001","journal-title":"Microelectron Reliab"},{"key":"10.1016\/S0026-2714(02)00039-2_BIB21","doi-asserted-by":"crossref","first-page":"133","DOI":"10.1063\/1.96974","article-title":"Simple technique for separating the effects of interface traps and trapped-oxide charge in metal-oxide-semiconductor transistors","volume":"48","author":"McWhorter","year":"1986","journal-title":"Appl Phys Lett"},{"key":"10.1016\/S0026-2714(02)00039-2_BIB22","doi-asserted-by":"crossref","first-page":"991","DOI":"10.1016\/0038-1101(87)90090-6","article-title":"Analysis of CMOS transistor instabilities","volume":"30","author":"Dimitrijev","year":"1987","journal-title":"Solid-State Electron"},{"key":"10.1016\/S0026-2714(02)00039-2_BIB23","doi-asserted-by":"crossref","first-page":"63","DOI":"10.1002\/(SICI)1521-396X(199809)169:1<63::AID-PSSA63>3.0.CO;2-4","article-title":"Modeling radiation-induced mobility degradation in MOSFETs","volume":"169","author":"Stojadinovic","year":"1998","journal-title":"Phys Stat Sol (A)"},{"key":"10.1016\/S0026-2714(02)00039-2_BIB24","doi-asserted-by":"crossref","first-page":"2197","DOI":"10.1109\/16.544392","article-title":"Charge-pumping characterization of SiO2\/Si interface in virgin and irradiated power VDMOSFETs","volume":"43","author":"Habas","year":"1996","journal-title":"IEEE Electron Devices"},{"key":"10.1016\/S0026-2714(02)00039-2_BIB25","doi-asserted-by":"crossref","first-page":"1318","DOI":"10.1109\/16.30938","article-title":"Analysis of the charge-pumping technique and its application for the evaluation of MOSFET degradation","volume":"36","author":"Heremans","year":"1989","journal-title":"IEEE Trans Electron Devices"},{"key":"10.1016\/S0026-2714(02)00039-2_BIB26","doi-asserted-by":"crossref","unstructured":"Stojadinovic N, Manic I, Djoric-Veljkovic S, Davidovic V, Dankovic D, Golubovic S, Dimitrijev S. Mechanisms of spontaneous recovery in positive gate bias stressed power VDMOSFETs, Phys Stat Sol (A), in press","DOI":"10.1016\/S0026-2714(02)00171-3"},{"key":"10.1016\/S0026-2714(02)00039-2_BIB27","doi-asserted-by":"crossref","first-page":"2158","DOI":"10.1109\/23.983189","article-title":"Aging and baking effects on the radiation hardness of MOS capacitors","volume":"48","author":"Karmarkar","year":"2001","journal-title":"IEEE Trans Nucl Sci"},{"key":"10.1016\/S0026-2714(02)00039-2_BIB28","doi-asserted-by":"crossref","first-page":"2524","DOI":"10.1063\/1.335931","article-title":"Diffusion of radiolytic molecular hydrogen as a mechanism for the post-irradiation buildup of interface states in SiO2-on-Si structures","volume":"58","author":"Griscom","year":"1985","journal-title":"J Appl Phys"},{"key":"10.1016\/S0026-2714(02)00039-2_BIB29","doi-asserted-by":"crossref","first-page":"2649","DOI":"10.1109\/23.736510","article-title":"Study of low-dose-rate radiation effects on commercial linear bipolar Ics","volume":"45","author":"Freitag","year":"1998","journal-title":"IEEE Trans Nucl Sci"},{"key":"10.1016\/S0026-2714(02)00039-2_BIB30","doi-asserted-by":"crossref","first-page":"2539","DOI":"10.1109\/23.903805","article-title":"Thermal-stress effects and enhanced low dose rate sensitivity in linear bipolar Ics","volume":"47","author":"Shaneyfelt","year":"2000","journal-title":"IEEE Trans Nucl Sci"},{"key":"10.1016\/S0026-2714(02)00039-2_BIB31","doi-asserted-by":"crossref","first-page":"9657","DOI":"10.1103\/PhysRevB.38.9657","article-title":"Kinetics of H2 passivation of Pb centers at the (111) Si-SiO2 interface","volume":"38","author":"Brower","year":"1988","journal-title":"Phys Rev B"},{"key":"10.1016\/S0026-2714(02)00039-2_BIB32","doi-asserted-by":"crossref","first-page":"1848","DOI":"10.1109\/23.45378","article-title":"Interface trap formation via the two-stage H+ process","volume":"36","author":"Saks","year":"1989","journal-title":"IEEE Trans Nucl Sci"}],"container-title":["Microelectronics Reliability"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/api.elsevier.com\/content\/article\/PII:S0026271402000392?httpAccept=text\/xml","content-type":"text\/xml","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/api.elsevier.com\/content\/article\/PII:S0026271402000392?httpAccept=text\/plain","content-type":"text\/plain","content-version":"vor","intended-application":"text-mining"}],"deposited":{"date-parts":[[2019,5,1]],"date-time":"2019-05-01T15:50:37Z","timestamp":1556725837000},"score":1,"resource":{"primary":{"URL":"https:\/\/linkinghub.elsevier.com\/retrieve\/pii\/S0026271402000392"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2002,4]]},"references-count":32,"journal-issue":{"issue":"4-5","published-print":{"date-parts":[[2002,4]]}},"alternative-id":["S0026271402000392"],"URL":"https:\/\/doi.org\/10.1016\/s0026-2714(02)00039-2","relation":{},"ISSN":["0026-2714"],"issn-type":[{"value":"0026-2714","type":"print"}],"subject":[],"published":{"date-parts":[[2002,4]]}}}