{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,4,15]],"date-time":"2025-04-15T06:10:46Z","timestamp":1744697446620,"version":"3.30.1"},"reference-count":17,"publisher":"Elsevier BV","issue":"6","license":[{"start":{"date-parts":[[2002,6,1]],"date-time":"2002-06-01T00:00:00Z","timestamp":1022889600000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/www.elsevier.com\/tdm\/userlicense\/1.0\/"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Microelectronics Reliability"],"published-print":{"date-parts":[[2002,6]]},"DOI":"10.1016\/s0026-2714(02)00053-7","type":"journal-article","created":{"date-parts":[[2002,10,10]],"date-time":"2002-10-10T22:24:11Z","timestamp":1034288651000},"page":"901-907","source":"Crossref","is-referenced-by-count":5,"title":["Significance of the failure criterion on transmission line pulse testing"],"prefix":"10.1016","volume":"42","author":[{"given":"B.","family":"Keppens","sequence":"first","affiliation":[]},{"given":"V.","family":"De Heyn","sequence":"additional","affiliation":[]},{"given":"M.","family":"Natarajan Iyer","sequence":"additional","affiliation":[]},{"given":"V.","family":"Vassilev","sequence":"additional","affiliation":[]},{"given":"G.","family":"Groeseneken","sequence":"additional","affiliation":[]}],"member":"78","reference":[{"key":"10.1016\/S0026-2714(02)00053-7_BIB1","unstructured":"ESD STM5.1 Electrostatic Discharge Sensitivity Testing\u2013\u2013Human Body Model"},{"year":"1998","series-title":"Semiconductor material and device characterisation","author":"Schroder","key":"10.1016\/S0026-2714(02)00053-7_BIB2"},{"key":"10.1016\/S0026-2714(02)00053-7_BIB3","unstructured":"Maloney TJ, Khurana N. Transmission line pulsing techniques for circuit modeling of ESD phenomena. Proc EOS\/ESD Symp, 1985. p. 49\u201354"},{"key":"10.1016\/S0026-2714(02)00053-7_BIB4","doi-asserted-by":"crossref","unstructured":"Beebe SG. Methodology for layout design and optimisation of ESD protection transistors. Proc EOS\/ESD Symp, 1996. p. 265\u201375","DOI":"10.1109\/EOSESD.1996.865152"},{"key":"10.1016\/S0026-2714(02)00053-7_BIB5","doi-asserted-by":"crossref","unstructured":"Stadler W, Guggenmos X, Egger P, Gieser H, Musshoff C. Does the ESD failure current obtained by transmission line pulsing always correlate to human body model tests? Proc EOS\/ESD Symp, 1997. p. 366\u201372","DOI":"10.1109\/EOSESD.1997.634264"},{"key":"10.1016\/S0026-2714(02)00053-7_BIB6","doi-asserted-by":"crossref","unstructured":"Richier C, Maene N, Mabboux G, Bellens R. Study of the ESD behavior of different clamp configurations in a 0.35 \u03bcm CMOS technology. Proc EOS\/ESD Symp, 1997. p. 240\u20135","DOI":"10.1109\/EOSESD.1997.634248"},{"key":"10.1016\/S0026-2714(02)00053-7_BIB7","doi-asserted-by":"crossref","unstructured":"Anderson WR, Krakauer DB. ESD protection for mixed voltage I\/O using nMOS transistors stacked in a cascade configuration. Proc EOS\/ESD Symp, 1998. p. 54\u201362","DOI":"10.1109\/EOSESD.1998.737022"},{"key":"10.1016\/S0026-2714(02)00053-7_BIB8","doi-asserted-by":"crossref","unstructured":"Gupta V, Amerasekera A, Ramaswamy S, Tsao A. ESD related process effects in mixed-voltage sub-0.5 \u03bcm technologies. Proc EOS\/ESD Symp, 1998. p. 161\u20139","DOI":"10.1109\/EOSESD.1998.737035"},{"key":"10.1016\/S0026-2714(02)00053-7_BIB9","doi-asserted-by":"crossref","unstructured":"Barth J, Richner J, Verhaege K, Henry LG. TLP calibration, correlation, standards, and new techniques. Proc EOS\/ESD Symp, 2000. p. 85\u201396","DOI":"10.1109\/EOSESD.2000.890031"},{"key":"10.1016\/S0026-2714(02)00053-7_BIB10","doi-asserted-by":"crossref","unstructured":"Henry LG, Barth J, Richner J, Verhaege K. Transmission Line pulse testing of the ESD protection structures of IC's\u2013\u2013A failure analysis perspective. Proc ISTFA, 2000. p. 203\u201312","DOI":"10.31399\/asm.cp.istfa2000p0203"},{"key":"10.1016\/S0026-2714(02)00053-7_BIB11","unstructured":"Transmission Line Pulsing\u2013\u2013Work Group 5.5, ESD Standards Working Groups, ESDA, NY, 2001"},{"key":"10.1016\/S0026-2714(02)00053-7_BIB12","unstructured":"Servaes S, Keppens B. ESD characterization of IC's\u2013\u2013Transmission line pulser. Industrial Engineering Thesis, Groep T, Leuven Institute of Technology, Engineering education, Leuven, Belgium, 1996"},{"key":"10.1016\/S0026-2714(02)00053-7_BIB13","doi-asserted-by":"crossref","unstructured":"Notermans G, de Jong P, Kuper F. Pitfalls when correlating TLP, HBM and MM testing. Proc EOS\/ESD Symp, 1998. p. 170\u20136","DOI":"10.1109\/EOSESD.1998.737036"},{"key":"10.1016\/S0026-2714(02)00053-7_BIB14","doi-asserted-by":"crossref","unstructured":"Meneghesso G, Santirosi S, Novarini E, Contiero C, Zanoni E. ESD robustness of smart power protection structures evaluated by means of HBM and TLP tests. Proc IRPS, 2000. p. 270\u20135","DOI":"10.1109\/RELPHY.2000.843926"},{"key":"10.1016\/S0026-2714(02)00053-7_BIB15","doi-asserted-by":"crossref","unstructured":"Ragle D, Decker K, Loy M. ESD effects on GaAs MESFET life time. Proc IRPS Symp, 1993. p. 352\u20136","DOI":"10.1109\/RELPHY.1993.283276"},{"key":"10.1016\/S0026-2714(02)00053-7_BIB16","doi-asserted-by":"crossref","first-page":"88","DOI":"10.1109\/28.195893","article-title":"Latent effects due to ESD in CMOS integrated circuits: review and experiments","volume":"29","author":"Greason","year":"1993","journal-title":"IEEE Trans Ind Appl"},{"key":"10.1016\/S0026-2714(02)00053-7_BIB17","doi-asserted-by":"crossref","unstructured":"Bock K, Keppens B, De V, Heyn G, Groeseneken LY, Ching A. Influence of gate length on ESD performance for deep sub micron CMOS technology. Proc EOS\/ESD Symp, 1999. p. 95\u2013104","DOI":"10.1109\/EOSESD.1999.818995"}],"container-title":["Microelectronics Reliability"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/api.elsevier.com\/content\/article\/PII:S0026271402000537?httpAccept=text\/xml","content-type":"text\/xml","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/api.elsevier.com\/content\/article\/PII:S0026271402000537?httpAccept=text\/plain","content-type":"text\/plain","content-version":"vor","intended-application":"text-mining"}],"deposited":{"date-parts":[[2024,12,6]],"date-time":"2024-12-06T19:39:53Z","timestamp":1733513993000},"score":1,"resource":{"primary":{"URL":"https:\/\/linkinghub.elsevier.com\/retrieve\/pii\/S0026271402000537"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2002,6]]},"references-count":17,"journal-issue":{"issue":"6","published-print":{"date-parts":[[2002,6]]}},"alternative-id":["S0026271402000537"],"URL":"https:\/\/doi.org\/10.1016\/s0026-2714(02)00053-7","relation":{},"ISSN":["0026-2714"],"issn-type":[{"type":"print","value":"0026-2714"}],"subject":[],"published":{"date-parts":[[2002,6]]}}}