{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,3,24]],"date-time":"2025-03-24T06:28:32Z","timestamp":1742797712662},"reference-count":15,"publisher":"Elsevier BV","issue":"7","license":[{"start":{"date-parts":[[2002,7,1]],"date-time":"2002-07-01T00:00:00Z","timestamp":1025481600000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/www.elsevier.com\/tdm\/userlicense\/1.0\/"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Microelectronics Reliability"],"published-print":{"date-parts":[[2002,7]]},"DOI":"10.1016\/s0026-2714(02)00066-5","type":"journal-article","created":{"date-parts":[[2002,10,14]],"date-time":"2002-10-14T22:58:33Z","timestamp":1034636313000},"page":"1021-1028","source":"Crossref","is-referenced-by-count":2,"title":["Multiple quantum well PIN optoelectronic devices and a method of restoring failed device characteristics"],"prefix":"10.1016","volume":"42","author":[{"given":"K","family":"Ikossi","sequence":"first","affiliation":[]},{"given":"W.S","family":"Rabinovich","sequence":"additional","affiliation":[]},{"given":"D.S","family":"Katzer","sequence":"additional","affiliation":[]},{"given":"S.C","family":"Binari","sequence":"additional","affiliation":[]},{"given":"J","family":"Mittereder","sequence":"additional","affiliation":[]},{"given":"P.G","family":"Goetz","sequence":"additional","affiliation":[]}],"member":"78","reference":[{"key":"10.1016\/S0026-2714(02)00066-5_BIB1","doi-asserted-by":"crossref","unstructured":"Rabinovich WS, Gilbreath GC, Goetz PG, Mahon R, Kazter DS, Ikossi-Anastasiou K, Binari S, Meehan TJ, Ferraro M, Sokolsky I, Vasquez JA, Vilcheck MJ. InGaAs multiple quantum well modulating retro-reflector for free space optical communications. Free Space Laser Communication and Laser Imaging, Proceedings of the SPIE, vol. 4489, 2001. p. 190\u2013201","DOI":"10.1117\/12.453228"},{"issue":"7","key":"10.1016\/S0026-2714(02)00066-5_BIB2","doi-asserted-by":"crossref","first-page":"1348","DOI":"10.1117\/1.1383783","article-title":"Large-aperture multiple quantum well modulating retroreflector for free-space optical data transfer on unmanned aerial vehicles","volume":"40","author":"Gilbreath","year":"2001","journal-title":"Opt. Eng."},{"key":"10.1016\/S0026-2714(02)00066-5_BIB3","doi-asserted-by":"crossref","first-page":"2244","DOI":"10.1063\/1.111658","article-title":"GaAs\/AlGaAs multi-quantum well resonant photorefractive devices fabricated using epitaxial lift-off","volume":"64","author":"Kyono","year":"1994","journal-title":"Appl. Phys. Lett."},{"key":"10.1016\/S0026-2714(02)00066-5_BIB4","doi-asserted-by":"crossref","first-page":"796","DOI":"10.1063\/1.92167","article-title":"Source and elimination of oval defects on GaAs films grown by molecular beam epitaxy","volume":"38","author":"Chai","year":"1981","journal-title":"Appl. Phys. Lett."},{"key":"10.1016\/S0026-2714(02)00066-5_BIB5","doi-asserted-by":"crossref","first-page":"1327","DOI":"10.1063\/1.96269","article-title":"Elimination of \u201cpair\u201d defects from GaAs grown by molecular beam epitaxy","volume":"47","author":"Chai","year":"1985","journal-title":"Appl. Phys. Lett."},{"key":"10.1016\/S0026-2714(02)00066-5_BIB6","doi-asserted-by":"crossref","first-page":"1086","DOI":"10.1063\/1.95770","article-title":"Elimination of oval defects in epilayers by using chemical beam epitaxy","volume":"46","author":"Tseng","year":"1985","journal-title":"Appl. Phys. Lett."},{"key":"10.1016\/S0026-2714(02)00066-5_BIB7","doi-asserted-by":"crossref","first-page":"137","DOI":"10.1016\/S0022-0248(98)01309-8","article-title":"Surface characterization of III\u2013V heteroepitaxial systems by laser scattering","volume":"201\/202","author":"Gonzalez","year":"1999","journal-title":"J. Cryst. Growth"},{"key":"10.1016\/S0026-2714(02)00066-5_BIB8","doi-asserted-by":"crossref","first-page":"1146","DOI":"10.1016\/S0022-0248(98)01155-5","article-title":"Partial strain relaxation in (In,Ga)As epilayers on GaAs by means of twin formation","volume":"198\/199","author":"Mizuno","year":"1999","journal-title":"J. Cryst. Growth"},{"key":"10.1016\/S0026-2714(02)00066-5_BIB9","doi-asserted-by":"crossref","first-page":"249","DOI":"10.1016\/S0042-207X(99)00163-3","article-title":"Growth defects associated with MBE deposited GaAs layers","volume":"55","author":"Kadhim","year":"1999","journal-title":"Vacuum"},{"issue":"3","key":"10.1016\/S0026-2714(02)00066-5_BIB10","first-page":"1609","article-title":"Optimization of buffer layers for InGaAs\/AlGaAs PIN optical modulators grown on GaAs substrates by molecular beam epitaxy","volume":"18","author":"Katzer","year":"2000","journal-title":"JVST B"},{"key":"10.1016\/S0026-2714(02)00066-5_BIB11","doi-asserted-by":"crossref","first-page":"1786","DOI":"10.1109\/16.7388","article-title":"Temperature dependence of transient and conventional annealed AlGaAs\/GaAs MODFET ohmic contacts","volume":"ED-35","author":"Ikossi-Anastasiou","year":"1988","journal-title":"IEEE Trans. Electron Dev."},{"key":"10.1016\/S0026-2714(02)00066-5_BIB12","doi-asserted-by":"crossref","first-page":"104","DOI":"10.1016\/0022-0248(87)90529-X","article-title":"Classification and origins of GaAs oval defects grown by molecular beam epitaxy","volume":"80","author":"Fujiwara","year":"1987","journal-title":"J. Cryst. Growth"},{"key":"10.1016\/S0026-2714(02)00066-5_BIB13","doi-asserted-by":"crossref","first-page":"796","DOI":"10.1063\/1.92167","article-title":"Source and elimination of oval defects on GaAs films grown by molecular beam epitaxy","volume":"38","author":"Chai","year":"1981","journal-title":"Appl. Phys. Lett."},{"key":"10.1016\/S0026-2714(02)00066-5_BIB14","doi-asserted-by":"crossref","first-page":"1970","DOI":"10.1063\/1.99593","article-title":"Oval defects in Ga1\u2212xAlxAs molecular beam epitaxy layers: a Raman scattering and photoluminescence combined study","volume":"52","author":"Sapriel","year":"1988","journal-title":"Appl. Phys. Lett."},{"key":"10.1016\/S0026-2714(02)00066-5_BIB15","unstructured":"Ikossi K, Binari SC, Katzer DS, Rabinovich WS. Defectectomy: a method of recovering large-area multilayer compound semiconductor devices for electro-optical applications. U.S. Patent disclosure, Navy Case no. 83,189, 2001, in process"}],"container-title":["Microelectronics Reliability"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/api.elsevier.com\/content\/article\/PII:S0026271402000665?httpAccept=text\/xml","content-type":"text\/xml","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/api.elsevier.com\/content\/article\/PII:S0026271402000665?httpAccept=text\/plain","content-type":"text\/plain","content-version":"vor","intended-application":"text-mining"}],"deposited":{"date-parts":[[2019,5,1]],"date-time":"2019-05-01T12:24:50Z","timestamp":1556713490000},"score":1,"resource":{"primary":{"URL":"https:\/\/linkinghub.elsevier.com\/retrieve\/pii\/S0026271402000665"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2002,7]]},"references-count":15,"journal-issue":{"issue":"7","published-print":{"date-parts":[[2002,7]]}},"alternative-id":["S0026271402000665"],"URL":"https:\/\/doi.org\/10.1016\/s0026-2714(02)00066-5","relation":{},"ISSN":["0026-2714"],"issn-type":[{"value":"0026-2714","type":"print"}],"subject":[],"published":{"date-parts":[[2002,7]]}}}