{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,12,12]],"date-time":"2024-12-12T05:42:20Z","timestamp":1733982140229,"version":"3.30.2"},"reference-count":11,"publisher":"Elsevier BV","issue":"1","license":[{"start":{"date-parts":[[2003,1,1]],"date-time":"2003-01-01T00:00:00Z","timestamp":1041379200000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/www.elsevier.com\/tdm\/userlicense\/1.0\/"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Microelectronics Reliability"],"published-print":{"date-parts":[[2003,1]]},"DOI":"10.1016\/s0026-2714(02)00284-6","type":"journal-article","created":{"date-parts":[[2003,3,4]],"date-time":"2003-03-04T11:29:22Z","timestamp":1046777362000},"page":"163-166","source":"Crossref","is-referenced-by-count":2,"title":["Enhanced reliability for low-temperature gate dielectric of MOS devices by N2O or NO plasma nitridation"],"prefix":"10.1016","volume":"43","author":[{"given":"David C.T.","family":"Or","sequence":"first","affiliation":[]},{"given":"P.T.","family":"Lai","sequence":"additional","affiliation":[]},{"given":"J.K.O.","family":"Sin","sequence":"additional","affiliation":[]},{"given":"P.C.K.","family":"Kwok","sequence":"additional","affiliation":[]},{"given":"J.P.","family":"Xu","sequence":"additional","affiliation":[]}],"member":"78","reference":[{"key":"10.1016\/S0026-2714(02)00284-6_BIB1","doi-asserted-by":"crossref","first-page":"74","DOI":"10.1109\/55.902836","article-title":"Anomalous turn-on voltage degradation during hot-carrier stress in polycrystalline silicon thin-film transistors","volume":"22","author":"Farmakis","year":"2001","journal-title":"IEEE Electron Dev. Lett."},{"key":"10.1016\/S0026-2714(02)00284-6_BIB2","unstructured":"Khamesra A, Lal R, Vasi J, A. Kumar KP, Sin JKO. Device degradation of n-channel poly-Si TFT\u2019s due to high-field, hot-carrier and radiation stressing. In: Proceedings of the 8th IPFA 2001, Singapore. p. 258\u201362"},{"key":"10.1016\/S0026-2714(02)00284-6_BIB3","doi-asserted-by":"crossref","first-page":"458","DOI":"10.1109\/55.735745","article-title":"Improved stability of short-channel hydrogenated N-channel polycrystalline silicon thin-film transistors with very thin ECR N2O-plasma gate oxide","volume":"19","author":"Lee","year":"1998","journal-title":"IEEE Electron Dev. Lett."},{"key":"10.1016\/S0026-2714(02)00284-6_BIB4","unstructured":"Maikap S, Ray SK, Maiti CK. NO\/O2\/NO plasma grown oxynitride films on silicon. In: Proceedings SPIE, vol. 3975. 2000. p. 411\u20134"},{"key":"10.1016\/S0026-2714(02)00284-6_BIB5","doi-asserted-by":"crossref","first-page":"191","DOI":"10.1109\/16.277380","article-title":"The performance and reliability of 0.4 micron MOSFETs with gate oxynitrides grown by rapid thermal processing using mixtures of N2O and O2","volume":"41","author":"Okada","year":"1994","journal-title":"IEEE Trans. Electron. Dev."},{"key":"10.1016\/S0026-2714(02)00284-6_BIB6","doi-asserted-by":"crossref","first-page":"345","DOI":"10.1109\/55.400733","article-title":"Effects of nitric oxide annealing of thermally grown silicon dioxide characteristics","volume":"16","author":"Yao","year":"1995","journal-title":"IEEE Electron Dev. Lett."},{"key":"10.1016\/S0026-2714(02)00284-6_BIB7","doi-asserted-by":"crossref","first-page":"64","DOI":"10.1109\/16.554793","article-title":"Effects of NH3 plasma passivation on n-channel polycrystalline silicon thin-film transistors","volume":"44","author":"Cheng","year":"1997","journal-title":"IEEE Trans. Electron. Dev."},{"key":"10.1016\/S0026-2714(02)00284-6_BIB8","first-page":"305","article-title":"Effects of plasma treatments, substrate types, and crystallization methods on performance and reliability of low temperature polysilicon TFTs","author":"Lin","year":"1999","journal-title":"IEDM Tech. Dig."},{"year":"1998","series-title":"Semiconductor material and device characterization","author":"Schroder","key":"10.1016\/S0026-2714(02)00284-6_BIB9"},{"year":"1982","series-title":"MOS (metal oxide semiconductor) physics and technology","author":"Nicollian","key":"10.1016\/S0026-2714(02)00284-6_BIB10"},{"key":"10.1016\/S0026-2714(02)00284-6_BIB11","doi-asserted-by":"crossref","first-page":"907","DOI":"10.1109\/16.381987","article-title":"Electrical properties and reliability of MOSFETs with rapid thermal NO-nitrided SiO2 gate dielectrics","volume":"42","author":"Bhat","year":"1995","journal-title":"IEEE Trans. Electron. Dev."}],"container-title":["Microelectronics Reliability"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/api.elsevier.com\/content\/article\/PII:S0026271402002846?httpAccept=text\/xml","content-type":"text\/xml","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/api.elsevier.com\/content\/article\/PII:S0026271402002846?httpAccept=text\/plain","content-type":"text\/plain","content-version":"vor","intended-application":"text-mining"}],"deposited":{"date-parts":[[2019,3,31]],"date-time":"2019-03-31T08:52:58Z","timestamp":1554022378000},"score":1,"resource":{"primary":{"URL":"https:\/\/linkinghub.elsevier.com\/retrieve\/pii\/S0026271402002846"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2003,1]]},"references-count":11,"journal-issue":{"issue":"1","published-print":{"date-parts":[[2003,1]]}},"alternative-id":["S0026271402002846"],"URL":"https:\/\/doi.org\/10.1016\/s0026-2714(02)00284-6","relation":{},"ISSN":["0026-2714"],"issn-type":[{"type":"print","value":"0026-2714"}],"subject":[],"published":{"date-parts":[[2003,1]]}}}