{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,9,29]],"date-time":"2025-09-29T20:42:00Z","timestamp":1759178520956,"version":"3.37.3"},"reference-count":6,"publisher":"Elsevier BV","issue":"4","license":[{"start":{"date-parts":[[2003,4,1]],"date-time":"2003-04-01T00:00:00Z","timestamp":1049155200000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/www.elsevier.com\/tdm\/userlicense\/1.0\/"}],"funder":[{"DOI":"10.13039\/501100001823","name":"Ministerstvo \u0160kolstv\u00ed, Ml\u00e1de\u017ee a T\u011blov\u00fdchovy","doi-asserted-by":"publisher","id":[{"id":"10.13039\/501100001823","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Microelectronics Reliability"],"published-print":{"date-parts":[[2003,4]]},"DOI":"10.1016\/s0026-2714(03)00023-4","type":"journal-article","created":{"date-parts":[[2003,4,7]],"date-time":"2003-04-07T18:47:43Z","timestamp":1049741263000},"page":"537-544","source":"Crossref","is-referenced-by-count":13,"title":["Impact of the electron, proton and helium irradiation on the forward I\u2013V characteristics of high-power P\u2013i\u2013N diode"],"prefix":"10.1016","volume":"43","author":[{"given":"J","family":"Vobeck\u00fd","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"P","family":"Hazdra","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"V","family":"Z\u00e1hlava","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"78","reference":[{"key":"10.1016\/S0026-2714(03)00023-4_BIB1","doi-asserted-by":"crossref","first-page":"427","DOI":"10.1016\/S0026-2714(99)00244-9","article-title":"Crossing point current of electron and proton irradiated power P\u2013i\u2013N diodes","volume":"40","author":"Vobeck\u00fd","year":"2000","journal-title":"Microelectron. Reliab."},{"key":"10.1016\/S0026-2714(03)00023-4_BIB2","unstructured":"ATLAS User\u2019s Manual, version 5.0.0.R, SILVACO Int., Santa Clara, 2000"},{"key":"10.1016\/S0026-2714(03)00023-4_BIB3","doi-asserted-by":"crossref","first-page":"123","DOI":"10.1016\/0038-1101(94)90116-3","article-title":"Accurate simulation of fast ion irradiated power devices","volume":"37","author":"Hazdra","year":"1994","journal-title":"Solid-State Electron."},{"key":"10.1016\/S0026-2714(03)00023-4_BIB4","doi-asserted-by":"crossref","first-page":"961","DOI":"10.1016\/0038-1101(92)90326-8","article-title":"A unified mobility model for device simulation. II. Temperature dependence of carrier mobility and lifetime","volume":"35","author":"Klaassen","year":"1992","journal-title":"Solid-State Electron."},{"key":"10.1016\/S0026-2714(03)00023-4_BIB5","doi-asserted-by":"crossref","first-page":"1839","DOI":"10.1063\/1.1663500","article-title":"Influence of deep traps on the measurement of free-carrier distributions in semiconductors by junction capacitance techniques","volume":"45","author":"Kimerling","year":"1974","journal-title":"J. Appl. Phys."},{"key":"10.1016\/S0026-2714(03)00023-4_BIB6","doi-asserted-by":"crossref","first-page":"55","DOI":"10.1016\/0038-1101(94)90104-X","article-title":"Resistivity profile measurements of proton-irradiated N-type silicon","volume":"37","author":"Keskitalo","year":"1994","journal-title":"Solid-State Electron."}],"container-title":["Microelectronics Reliability"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/api.elsevier.com\/content\/article\/PII:S0026271403000234?httpAccept=text\/xml","content-type":"text\/xml","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/api.elsevier.com\/content\/article\/PII:S0026271403000234?httpAccept=text\/plain","content-type":"text\/plain","content-version":"vor","intended-application":"text-mining"}],"deposited":{"date-parts":[[2022,6,24]],"date-time":"2022-06-24T10:21:25Z","timestamp":1656066085000},"score":1,"resource":{"primary":{"URL":"https:\/\/linkinghub.elsevier.com\/retrieve\/pii\/S0026271403000234"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2003,4]]},"references-count":6,"journal-issue":{"issue":"4","published-print":{"date-parts":[[2003,4]]}},"alternative-id":["S0026271403000234"],"URL":"https:\/\/doi.org\/10.1016\/s0026-2714(03)00023-4","relation":{},"ISSN":["0026-2714"],"issn-type":[{"type":"print","value":"0026-2714"}],"subject":[],"published":{"date-parts":[[2003,4]]}}}