{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,8,28]],"date-time":"2025-08-28T12:53:57Z","timestamp":1756385637630},"reference-count":9,"publisher":"Elsevier BV","issue":"6","license":[{"start":{"date-parts":[[2003,6,1]],"date-time":"2003-06-01T00:00:00Z","timestamp":1054425600000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/www.elsevier.com\/tdm\/userlicense\/1.0\/"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Microelectronics Reliability"],"published-print":{"date-parts":[[2003,6]]},"DOI":"10.1016\/s0026-2714(03)00066-0","type":"journal-article","created":{"date-parts":[[2003,4,23]],"date-time":"2003-04-23T22:32:29Z","timestamp":1051137149000},"page":"823-827","source":"Crossref","is-referenced-by-count":27,"title":["Hot electron induced degradation of undoped AlGaN\/GaN HFETs"],"prefix":"10.1016","volume":"43","author":[{"given":"Hyungtak","family":"Kim","sequence":"first","affiliation":[]},{"given":"Alexei","family":"Vertiatchikh","sequence":"additional","affiliation":[]},{"given":"Richard M.","family":"Thompson","sequence":"additional","affiliation":[]},{"given":"Vinayak","family":"Tilak","sequence":"additional","affiliation":[]},{"given":"Thomas R.","family":"Prunty","sequence":"additional","affiliation":[]},{"given":"James R.","family":"Shealy","sequence":"additional","affiliation":[]},{"given":"Lester F.","family":"Eastman","sequence":"additional","affiliation":[]}],"member":"78","reference":[{"issue":"13","key":"10.1016\/S0026-2714(03)00066-0_BIB1","doi-asserted-by":"crossref","first-page":"3499","DOI":"10.1088\/0953-8984\/14\/13\/308","article-title":"An AlGaN\/GaN high-electron-mobility transistor with an AlN sub-buffer layer","volume":"14","author":"Shealy","year":"2002","journal-title":"J. Phys.: Codens. Matter."},{"key":"10.1016\/S0026-2714(03)00066-0_BIB2","doi-asserted-by":"crossref","first-page":"203","DOI":"10.1002\/1521-396X(200111)188:1<203::AID-PSSA203>3.0.CO;2-C","article-title":"Reliability evaluation of high power AlGaN\/GaN HEMTs on SiC","volume":"188","author":"Kim","year":"2001","journal-title":"Phys. Stat. Sol. (a)"},{"key":"10.1016\/S0026-2714(03)00066-0_BIB3","doi-asserted-by":"crossref","unstructured":"Lee C, Witkowski L, Muir M, Tsering HQ, Saunier P, Wang H, et al. Reliability evaluation of AlGaN\/GaN HEMTs. In: Proc Lester Eastman Conf on High Performance Dev, Newark, DE, 2002. p. 436\u201342","DOI":"10.1109\/LECHPD.2002.1146785"},{"key":"10.1016\/S0026-2714(03)00066-0_BIB4","doi-asserted-by":"crossref","first-page":"1022","DOI":"10.1049\/el:19990697","article-title":"Large signal dispersion of AlGaN\/GaN heterostructure field effect transistors","volume":"353","author":"Kohn","year":"1999","journal-title":"Electron. Lett."},{"key":"10.1016\/S0026-2714(03)00066-0_BIB5","doi-asserted-by":"crossref","first-page":"560","DOI":"10.1109\/16.906451","article-title":"The impact of surface states on the DC and RF characteristics of AlGaN\/GaN HFETs","volume":"48","author":"Veturi","year":"2001","journal-title":"IEEE Trans. Electron Dev."},{"key":"10.1016\/S0026-2714(03)00066-0_BIB6","unstructured":"Tilak V, Kaper V, Thompson R, Prunty T, Kim H, Smart J, et al. Correlation of pulsed IV measurements and high power performance of AlGaN\/GaN HEMTs. In: Proc Int Symp Comp Semicond, Lausanne, Switzerland, October 2002"},{"key":"10.1016\/S0026-2714(03)00066-0_BIB7","doi-asserted-by":"crossref","first-page":"268","DOI":"10.1109\/55.843146","article-title":"The effect of surface passivation on the microwave characteristics of undoped AlGaN\/GaN HEMTs","volume":"21","author":"Green","year":"2000","journal-title":"IEEE Electron Dev. Lett."},{"key":"10.1016\/S0026-2714(03)00066-0_BIB8","first-page":"842","article-title":"Gate slow transients in GaAs MESFETs causes, cures and impact on circuits","author":"Yeats","year":"1988","journal-title":"IEDM Tech Dig"},{"issue":"11\u201312","key":"10.1016\/S0026-2714(03)00066-0_BIB9","doi-asserted-by":"crossref","first-page":"1895","DOI":"10.1016\/0026-2714(96)00223-5","article-title":"Drain current DLTS analysis of recoverable and permanent degradation effects in AlGaAs\/GaAs and AlGaAs\/InGaAs HEMTs","volume":"36","author":"Meneghesso","year":"1996","journal-title":"Microelectron. Reliab."}],"container-title":["Microelectronics Reliability"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/api.elsevier.com\/content\/article\/PII:S0026271403000660?httpAccept=text\/xml","content-type":"text\/xml","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/api.elsevier.com\/content\/article\/PII:S0026271403000660?httpAccept=text\/plain","content-type":"text\/plain","content-version":"vor","intended-application":"text-mining"}],"deposited":{"date-parts":[[2019,3,22]],"date-time":"2019-03-22T02:26:38Z","timestamp":1553221598000},"score":1,"resource":{"primary":{"URL":"https:\/\/linkinghub.elsevier.com\/retrieve\/pii\/S0026271403000660"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2003,6]]},"references-count":9,"journal-issue":{"issue":"6","published-print":{"date-parts":[[2003,6]]}},"alternative-id":["S0026271403000660"],"URL":"https:\/\/doi.org\/10.1016\/s0026-2714(03)00066-0","relation":{},"ISSN":["0026-2714"],"issn-type":[{"value":"0026-2714","type":"print"}],"subject":[],"published":{"date-parts":[[2003,6]]}}}