{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,4,15]],"date-time":"2025-04-15T06:11:47Z","timestamp":1744697507915,"version":"3.30.2"},"reference-count":19,"publisher":"Elsevier BV","issue":"8","license":[{"start":{"date-parts":[[2003,8,1]],"date-time":"2003-08-01T00:00:00Z","timestamp":1059696000000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/www.elsevier.com\/tdm\/userlicense\/1.0\/"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Microelectronics Reliability"],"published-print":{"date-parts":[[2003,8]]},"DOI":"10.1016\/s0026-2714(03)00170-7","type":"journal-article","created":{"date-parts":[[2003,7,22]],"date-time":"2003-07-22T22:21:43Z","timestamp":1058912503000},"page":"1185-1192","source":"Crossref","is-referenced-by-count":15,"title":["Statistics of soft and hard breakdown in thin SiO2 gate oxides"],"prefix":"10.1016","volume":"43","author":[{"given":"J.","family":"Su\u00f1\u00e9","sequence":"first","affiliation":[]},{"given":"E.Y.","family":"Wu","sequence":"additional","affiliation":[]},{"given":"D.","family":"Jim\u00e9nez","sequence":"additional","affiliation":[]},{"given":"W.L.","family":"Lai","sequence":"additional","affiliation":[]}],"member":"78","reference":[{"key":"10.1016\/S0026-2714(03)00170-7_BIB1","first-page":"553","article-title":"Impact on MOSFET oxide breakdown on digital circuit operation and reliability","author":"Kaczer","year":"2000","journal-title":"IEEE Int. Electron Dev. Meeting Techn. Dig."},{"key":"10.1016\/S0026-2714(03)00170-7_BIB2","doi-asserted-by":"crossref","first-page":"661","DOI":"10.1109\/LED.2002.805010","article-title":"Voltage dependence of hard breakdown growth and the reliability implications in thin dielectrics","volume":"23","author":"Linder","year":"2002","journal-title":"IEEE Electron Dev. Lett."},{"key":"10.1016\/S0026-2714(03)00170-7_BIB3","doi-asserted-by":"crossref","first-page":"478","DOI":"10.1088\/0268-1242\/15\/5\/307","article-title":"The gate oxide lifetime limited by B-mode stress induced leakage current and the scaling limit of silicon dioxides in the direct tunnelling regime","volume":"15","author":"Okada","year":"2000","journal-title":"Semicond. Sci. Technol."},{"key":"10.1016\/S0026-2714(03)00170-7_BIB4","doi-asserted-by":"crossref","unstructured":"Linder BP, Stathis JH, Wachnik RA, Wu E, Cohen SA, Ray A, et al. Gate oxide breakdown under current limited constant voltage stress. Symp VLSI Technology Dig Techn Papers, 2000. p. 214\u20135","DOI":"10.1109\/VLSIT.2000.852830"},{"key":"10.1016\/S0026-2714(03)00170-7_BIB5","doi-asserted-by":"crossref","unstructured":"Monsieur F, Vincent E, Roy D, Bruy\u00e8re S, Vildeuil JC, Pananakakis G, et al. A thorough investigation of progressive breakdown in ultra-thin oxides. Physical understanding and application for industrial reliability assessment. In: Proceedings of the 40th International Reliability Physics Symposium, 2002. p. 45","DOI":"10.1109\/RELPHY.2002.996609"},{"key":"10.1016\/S0026-2714(03)00170-7_BIB6","doi-asserted-by":"crossref","first-page":"147","DOI":"10.1109\/IEDM.2002.1175800","article-title":"Statistics of successive breakdown events for ultra-thin gate oxides","author":"Su\u00f1\u00e9","year":"2002","journal-title":"IEEE Int. Electron Dev. Meeting Techn. Dig."},{"key":"10.1016\/S0026-2714(03)00170-7_BIB7","first-page":"120","article-title":"Understanding soft and hard breakdown statistics, prevalence ratios and energy dissipation during breakdown runaway","author":"Su\u00f1\u00e9","year":"2001","journal-title":"IEEE Int. Electron Dev. Meeting Techn. Dig."},{"key":"10.1016\/S0026-2714(03)00170-7_BIB8","doi-asserted-by":"crossref","unstructured":"Wu EY, Abadeer WW, Han L-K, Lo S-H, Hueckel GR. Challenges for accurate projections in the ultra-thin oxide regime. In: Proceedings of the 37th International Reliability Physics Symposium, 1999. p. 57\u201365","DOI":"10.1109\/RELPHY.1999.761593"},{"key":"10.1016\/S0026-2714(03)00170-7_BIB9","doi-asserted-by":"crossref","first-page":"167","DOI":"10.1109\/55.830970","article-title":"Are soft breakdown and hard breakdown of ultrathin gate oxides actually different failure mechanisms?","volume":"21","author":"Su\u00f1\u00e9","year":"2000","journal-title":"IEEE Electron Dev. Lett."},{"key":"10.1016\/S0026-2714(03)00170-7_BIB10","doi-asserted-by":"crossref","unstructured":"Shuele J, Vogel EM, Wang B, Bernstein JB. Temperature dependence of soft breakdown and wear-out in sub-3 nm SiO2 films. In: Proceedings of the 38th International Reliability Physics Symposium, 2000. p. 33\u20139","DOI":"10.1109\/RELPHY.2000.843888"},{"key":"10.1016\/S0026-2714(03)00170-7_BIB11","unstructured":"Bruy\u00e8re S, Vincent E, Ghibaudo G. Quasi-breakdown in ultra-thin SiO2 films: occurrence, characterization and reliability assessment methodology. In: Proceedings of the 38th International Reliability Physics Symposium, 2000. p. 33\u20139"},{"key":"10.1016\/S0026-2714(03)00170-7_BIB12","doi-asserted-by":"crossref","unstructured":"Pompl T, Wurzer H, Kerber M, Eisele I. Investigation of ultra-thin gate oxide reliability behavior by separate characterization of soft breakdown and hard breakdown. In: Proceedings of the 38th International Reliability Physics Symposium, 2000. p. 33\u20139","DOI":"10.1109\/RELPHY.2000.843889"},{"key":"10.1016\/S0026-2714(03)00170-7_BIB13","doi-asserted-by":"crossref","first-page":"232","DOI":"10.1109\/16.981212","article-title":"A study of soft and hard breakdown\u2013\u2013part I: analysis of statistical percolation conductance","volume":"49","author":"Alam","year":"2002","journal-title":"IEEE Trans. Electron Dev."},{"key":"10.1016\/S0026-2714(03)00170-7_BIB14","first-page":"533","article-title":"Post soft breakdown conduction in SiO2 gate oxides","author":"Su\u00f1\u00e9","year":"2000","journal-title":"Int. Electron Dev. Meeting Techn. Dig."},{"key":"10.1016\/S0026-2714(03)00170-7_BIB15","doi-asserted-by":"crossref","unstructured":"Miranda E, Su\u00f1\u00e9 J. Analytic modeling of leakage current through multiple breakdown paths in SiO2 films. In: Proceedings of the 39th International Reliability Physics Symposium, 2001. p. 367\u201379","DOI":"10.1109\/RELPHY.2001.922929"},{"key":"10.1016\/S0026-2714(03)00170-7_BIB16","doi-asserted-by":"crossref","first-page":"239","DOI":"10.1109\/16.981213","article-title":"A study of soft and hard breakdown\u2013\u2013part II: principles of area, thickness, and voltage scaling","volume":"49","author":"Alam","year":"2002","journal-title":"IEEE Trans. Electron Dev."},{"key":"10.1016\/S0026-2714(03)00170-7_BIB17","first-page":"399","article-title":"The physics and chemistry of SiO2 and the Si\u2013SiO2 interface-4","author":"Toriumi","year":"2000","journal-title":"Proc. Electrochem. Soc."},{"key":"10.1016\/S0026-2714(03)00170-7_BIB18","doi-asserted-by":"crossref","first-page":"265","DOI":"10.1109\/55.767093","article-title":"A function-fit model for the soft breakdown failure mode","volume":"20","author":"Miranda","year":"1999","journal-title":"IEEE Electron Dev. Lett."},{"key":"10.1016\/S0026-2714(03)00170-7_BIB19","first-page":"183","article-title":"A detailed study of soft- and pre-soft-breakdowns in small geometry MOS structures","author":"Sakura","year":"1998","journal-title":"Int. Electron Dev. Meeting Techn. Dig."}],"container-title":["Microelectronics Reliability"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/api.elsevier.com\/content\/article\/PII:S0026271403001707?httpAccept=text\/xml","content-type":"text\/xml","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/api.elsevier.com\/content\/article\/PII:S0026271403001707?httpAccept=text\/plain","content-type":"text\/plain","content-version":"vor","intended-application":"text-mining"}],"deposited":{"date-parts":[[2024,12,13]],"date-time":"2024-12-13T07:40:29Z","timestamp":1734075629000},"score":1,"resource":{"primary":{"URL":"https:\/\/linkinghub.elsevier.com\/retrieve\/pii\/S0026271403001707"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2003,8]]},"references-count":19,"journal-issue":{"issue":"8","published-print":{"date-parts":[[2003,8]]}},"alternative-id":["S0026271403001707"],"URL":"https:\/\/doi.org\/10.1016\/s0026-2714(03)00170-7","relation":{},"ISSN":["0026-2714"],"issn-type":[{"type":"print","value":"0026-2714"}],"subject":[],"published":{"date-parts":[[2003,8]]}}}