{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,9,21]],"date-time":"2025-09-21T11:22:10Z","timestamp":1758453730229,"version":"3.44.0"},"reference-count":15,"publisher":"Elsevier BV","issue":"8","license":[{"start":{"date-parts":[[2003,8,1]],"date-time":"2003-08-01T00:00:00Z","timestamp":1059696000000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/www.elsevier.com\/tdm\/userlicense\/1.0\/"},{"start":{"date-parts":[[2003,8,1]],"date-time":"2003-08-01T00:00:00Z","timestamp":1059696000000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/www.elsevier.com\/legal\/tdmrep-license"}],"funder":[{"DOI":"10.13039\/501100003176","name":"Ministerio de Educaci\u00f3n, Cultura y Deporte","doi-asserted-by":"publisher","id":[{"id":"10.13039\/501100003176","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":["elsevier.com","sciencedirect.com"],"crossmark-restriction":true},"short-container-title":["Microelectronics Reliability"],"published-print":{"date-parts":[[2003,8]]},"DOI":"10.1016\/s0026-2714(03)00171-9","type":"journal-article","created":{"date-parts":[[2003,7,22]],"date-time":"2003-07-22T18:21:43Z","timestamp":1058898103000},"page":"1193-1197","update-policy":"https:\/\/doi.org\/10.1016\/elsevier_cm_policy","source":"Crossref","is-referenced-by-count":17,"title":["Circuit implications of gate oxide breakdown"],"prefix":"10.1016","volume":"43","author":[{"given":"J.H.","family":"Stathis","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"R.","family":"Rodr\u0131&#x;guez","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"B.P.","family":"Linder","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"78","reference":[{"key":"10.1016\/S0026-2714(03)00171-9_BIB1","doi-asserted-by":"crossref","first-page":"265","DOI":"10.1147\/rd.462.0265","article-title":"Reliability limits for the gate insulator in CMOS technology","volume":"46","author":"Stathis","year":"2002","journal-title":"IBM J. Res. Develop."},{"key":"10.1016\/S0026-2714(03)00171-9_BIB2","doi-asserted-by":"crossref","first-page":"555","DOI":"10.1016\/S0026-2714(02)00026-4","article-title":"Analysis and modeling of a digital CMOS circuit operation and reliability after gate oxide breakdown: a case study","volume":"42","author":"Kaczer","year":"2002","journal-title":"Microelectron. Reliab."},{"key":"10.1016\/S0026-2714(03)00171-9_BIB3","doi-asserted-by":"crossref","unstructured":"Weir BE et al. Ultra-thin gate dielectrics: They break down, but do they fail? Digest of the 1997 International Electron Devices Meeting, 1997. p. 73\u20136","DOI":"10.1109\/IEDM.1997.649463"},{"key":"10.1016\/S0026-2714(03)00171-9_BIB4","doi-asserted-by":"crossref","unstructured":"Pompl T et al. Influence of soft breakdown on NMOSFET device characteristics. 1999 International Reliability Physics Symposium Proceedings, 1999. p. 82\u20137","DOI":"10.1109\/RELPHY.1999.761596"},{"key":"10.1016\/S0026-2714(03)00171-9_BIB5","doi-asserted-by":"crossref","first-page":"559","DOI":"10.1109\/LED.2002.802600","article-title":"The impact of gate oxide breakdown on SRAM stability","volume":"23","author":"Rodr\u0131́guez","year":"2002","journal-title":"IEEE Electron Device Lett."},{"key":"10.1016\/S0026-2714(03)00171-9_BIB6","doi-asserted-by":"crossref","unstructured":"Monsieur F et al. A thorough investigation of progressive breakdown in ultra-thin oxides. Physical understanding and application for industrial reliability assessment. 2002 International Reliability Physics Symposium Proceedings, 2002. p. 45\u201354","DOI":"10.1109\/RELPHY.2002.996609"},{"key":"10.1016\/S0026-2714(03)00171-9_BIB7","doi-asserted-by":"crossref","first-page":"661","DOI":"10.1109\/LED.2002.805010","article-title":"Voltage dependence of hard breakdown growth and the reliability implication in thin dielectrics","volume":"23","author":"Linder","year":"2002","journal-title":"IEEE Electron Device Lett."},{"key":"10.1016\/S0026-2714(03)00171-9_BIB8","doi-asserted-by":"crossref","first-page":"114","DOI":"10.1109\/LED.2002.808155","article-title":"A model for gate oxide breakdown in CMOS inverters","volume":"24","author":"Rodr\u0131́guez","year":"2003","journal-title":"IEEE Electron Device Lett."},{"key":"10.1016\/S0026-2714(03)00171-9_BIB9","doi-asserted-by":"crossref","unstructured":"Linder BP et al. Gate oxide breakdown under current limited constant voltage stress. Digest of the 2000 Symposium on VLSI Technology, 2000. p. 214\u20135","DOI":"10.1109\/VLSIT.2000.852830"},{"key":"10.1016\/S0026-2714(03)00171-9_BIB10","doi-asserted-by":"crossref","first-page":"265","DOI":"10.1109\/55.767093","article-title":"A function-fit model for the soft breakdown failure mode","volume":"20","author":"Miranda","year":"1999","journal-title":"IEEE Electron Device Lett."},{"key":"10.1016\/S0026-2714(03)00171-9_BIB11","doi-asserted-by":"crossref","first-page":"2245","DOI":"10.1109\/16.249472","article-title":"A bi-directional NMOSFET current reduction model for simulation of hot-carrier induced circuit degradation","volume":"40","author":"Quader","year":"1993","journal-title":"IEEE Trans. Electron Devices"},{"key":"10.1016\/S0026-2714(03)00171-9_BIB12","doi-asserted-by":"crossref","unstructured":"Kaczer B et al. Observation of hot-carrier-induced nFET gate-oxide breakdown in dynamically stressed CMOS circuits. Digest of the 2002 International Electron Devices Meeting, 2002. p. 171\u20134","DOI":"10.1109\/IEDM.2002.1175806"},{"key":"10.1016\/S0026-2714(03)00171-9_BIB13","doi-asserted-by":"crossref","first-page":"748","DOI":"10.1109\/JSSC.1987.1052809","article-title":"Static-noise margin analysis of MOS SRAM cells","volume":"SC-22","author":"Seevink","year":"1987","journal-title":"IEEE J. Solid State Circuits"},{"key":"10.1016\/S0026-2714(03)00171-9_BIB14","doi-asserted-by":"crossref","first-page":"658","DOI":"10.1109\/4.913744","article-title":"The impact of intrinsic device fluctuations on CMOS SRAM cell stability","volume":"36","author":"Bhavnagarwala","year":"2001","journal-title":"IEEE J. Solid State Circuits"},{"key":"10.1016\/S0026-2714(03)00171-9_BIB15","doi-asserted-by":"crossref","first-page":"27","DOI":"10.1147\/rd.461.0027","article-title":"The circuit and physical design of the POWER4 microprocessor","volume":"46","author":"Warnock","year":"2002","journal-title":"IBM J. Res. Develop."}],"container-title":["Microelectronics Reliability"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/api.elsevier.com\/content\/article\/PII:S0026271403001719?httpAccept=text\/xml","content-type":"text\/xml","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/api.elsevier.com\/content\/article\/PII:S0026271403001719?httpAccept=text\/plain","content-type":"text\/plain","content-version":"vor","intended-application":"text-mining"}],"deposited":{"date-parts":[[2025,9,21]],"date-time":"2025-09-21T05:24:39Z","timestamp":1758432279000},"score":1,"resource":{"primary":{"URL":"https:\/\/linkinghub.elsevier.com\/retrieve\/pii\/S0026271403001719"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2003,8]]},"references-count":15,"journal-issue":{"issue":"8","published-print":{"date-parts":[[2003,8]]}},"alternative-id":["S0026271403001719"],"URL":"https:\/\/doi.org\/10.1016\/s0026-2714(03)00171-9","relation":{},"ISSN":["0026-2714"],"issn-type":[{"type":"print","value":"0026-2714"}],"subject":[],"published":{"date-parts":[[2003,8]]},"assertion":[{"value":"Elsevier","name":"publisher","label":"This article is maintained by"},{"value":"Circuit implications of gate oxide breakdown","name":"articletitle","label":"Article Title"},{"value":"Microelectronics Reliability","name":"journaltitle","label":"Journal Title"},{"value":"https:\/\/doi.org\/10.1016\/S0026-2714(03)00171-9","name":"articlelink","label":"CrossRef DOI link to publisher maintained version"},{"value":"converted-article","name":"content_type","label":"Content Type"},{"value":"Copyright \u00a9 2003 Elsevier Ltd. Published by Elsevier Ltd. All rights reserved.","name":"copyright","label":"Copyright"}]}}