{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,2,11]],"date-time":"2024-02-11T12:58:16Z","timestamp":1707656296543},"reference-count":10,"publisher":"Elsevier BV","issue":"6-8","license":[{"start":{"date-parts":[[2002,5,1]],"date-time":"2002-05-01T00:00:00Z","timestamp":1020211200000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/www.elsevier.com\/tdm\/userlicense\/1.0\/"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Simulation Practice and Theory"],"published-print":{"date-parts":[[2002,5]]},"DOI":"10.1016\/s0928-4869(01)00047-7","type":"journal-article","created":{"date-parts":[[2003,3,26]],"date-time":"2003-03-26T00:21:05Z","timestamp":1048638065000},"page":"321-332","source":"Crossref","is-referenced-by-count":5,"title":["Methods for anisotropic selection of final states in the full band ensemble Monte Carlo simulation framework"],"prefix":"10.1016","volume":"9","author":[{"given":"M","family":"Hjelm","sequence":"first","affiliation":[]},{"given":"H.-E","family":"Nilsson","sequence":"additional","affiliation":[]}],"member":"78","reference":[{"key":"10.1016\/S0928-4869(01)00047-7_BIB1","series-title":"The Monte Carlo Device Simulation: Full Band and Beyond","year":"1991"},{"key":"10.1016\/S0928-4869(01)00047-7_BIB2","doi-asserted-by":"crossref","first-page":"1882","DOI":"10.1109\/16.870567","article-title":"Monte Carlo simulation of noncubic symmetry semiconductor materials and devices","volume":"47","author":"Brennan","year":"2000","journal-title":"IEEE Trans. Electron Devices"},{"key":"10.1016\/S0928-4869(01)00047-7_BIB3","doi-asserted-by":"crossref","first-page":"9721","DOI":"10.1103\/PhysRevB.38.9721","article-title":"Monte Carlo analysis of electron transport in small semiconductor devices including band-structure and space-charge effects","volume":"38","author":"Fischetti","year":"1988","journal-title":"Phys. Rev. B"},{"key":"10.1016\/S0928-4869(01)00047-7_BIB4","unstructured":"M.V. Fischetti, N. Sano, S.E. Laux, K. Natori, Full-band-structure theory of high-field transport and impact ionization of electrons and holes in Ge, Si, and GaAs, IEEE J. Technol. Comput Aided Design, Available from: http:\/\/www.ieee.org\/journal\/tcad\/accepted\/fischetti-feb97"},{"key":"10.1016\/S0928-4869(01)00047-7_BIB5","doi-asserted-by":"crossref","first-page":"645","DOI":"10.1103\/RevModPhys.55.645","volume":"55","author":"Jacoboni","year":"1983","journal-title":"Rev. Mod. Phys."},{"key":"10.1016\/S0928-4869(01)00047-7_BIB6","doi-asserted-by":"crossref","first-page":"1963","DOI":"10.1016\/0022-3697(70)90001-6","volume":"31","author":"Fawcett","year":"1970","journal-title":"J. Phys. Chem. Solids"},{"key":"10.1016\/S0928-4869(01)00047-7_BIB7","doi-asserted-by":"crossref","first-page":"813","DOI":"10.1063\/1.336603","article-title":"Ionized impurity scattering in Monte Carlo calculations","volume":"59","author":"Van de Roer","year":"1986","journal-title":"J. Appl. Phys."},{"key":"10.1016\/S0928-4869(01)00047-7_BIB8","doi-asserted-by":"crossref","first-page":"1589","DOI":"10.1088\/0022-3719\/10\/10\/003","article-title":"Reconciliation of the Conwell\u2013Weisskopf and Brooks\u2013Herring formulae for charged-impurity scattering in semiconductors: third-body interference","volume":"10","author":"Ridley","year":"1977","journal-title":"J. Phys. C"},{"key":"10.1016\/S0928-4869(01)00047-7_BIB9","doi-asserted-by":"crossref","unstructured":"H. Shichijo, J.Y. Tang, J. Bude, D. Yoder, in: J.K. Hess (Ed.), The Monte Carlo Device Simulation: Full Band and Beyond, Kluwer Academic Publishers, Dordrecht, 1991, pp. 285\u2013307 (Chapter 10)","DOI":"10.1007\/978-1-4615-4026-7_10"},{"issue":"6","key":"10.1016\/S0928-4869(01)00047-7_BIB10","first-page":"870","volume":"E82-C","author":"Jungemann","year":"1999","journal-title":"IEICE Trans. Electron."}],"container-title":["Simulation Practice and Theory"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/api.elsevier.com\/content\/article\/PII:S0928486901000477?httpAccept=text\/xml","content-type":"text\/xml","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/api.elsevier.com\/content\/article\/PII:S0928486901000477?httpAccept=text\/plain","content-type":"text\/plain","content-version":"vor","intended-application":"text-mining"}],"deposited":{"date-parts":[[2019,5,3]],"date-time":"2019-05-03T22:26:13Z","timestamp":1556922373000},"score":1,"resource":{"primary":{"URL":"https:\/\/linkinghub.elsevier.com\/retrieve\/pii\/S0928486901000477"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2002,5]]},"references-count":10,"journal-issue":{"issue":"6-8","published-print":{"date-parts":[[2002,5]]}},"alternative-id":["S0928486901000477"],"URL":"https:\/\/doi.org\/10.1016\/s0928-4869(01)00047-7","relation":{},"ISSN":["0928-4869"],"issn-type":[{"value":"0928-4869","type":"print"}],"subject":[],"published":{"date-parts":[[2002,5]]}}}