{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,8,22]],"date-time":"2025-08-22T02:11:14Z","timestamp":1755828674784,"version":"3.44.0"},"reference-count":158,"publisher":"Elsevier","isbn-type":[{"type":"print","value":"9780128197189"}],"license":[{"start":{"date-parts":[[2021,1,1]],"date-time":"2021-01-01T00:00:00Z","timestamp":1609459200000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/www.elsevier.com\/tdm\/userlicense\/1.0\/"},{"start":{"date-parts":[[2021,1,1]],"date-time":"2021-01-01T00:00:00Z","timestamp":1609459200000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/www.elsevier.com\/legal\/tdmrep-license"},{"start":{"date-parts":[[2021,1,1]],"date-time":"2021-01-01T00:00:00Z","timestamp":1609459200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-017"},{"start":{"date-parts":[[2021,1,1]],"date-time":"2021-01-01T00:00:00Z","timestamp":1609459200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"},{"start":{"date-parts":[[2021,1,1]],"date-time":"2021-01-01T00:00:00Z","timestamp":1609459200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-012"},{"start":{"date-parts":[[2021,1,1]],"date-time":"2021-01-01T00:00:00Z","timestamp":1609459200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2021,1,1]],"date-time":"2021-01-01T00:00:00Z","timestamp":1609459200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-004"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2021]]},"DOI":"10.1016\/b978-0-12-819718-9.00003-0","type":"book-chapter","created":{"date-parts":[[2021,1,30]],"date-time":"2021-01-30T01:29:34Z","timestamp":1611970174000},"page":"585-621","source":"Crossref","is-referenced-by-count":7,"title":["New strategies toward high-performance and low-temperature processing of solution-based metal oxide TFTs"],"prefix":"10.1016","author":[{"given":"Emanuel","family":"Carlos","sequence":"first","affiliation":[]},{"given":"Rita","family":"Branquinho","sequence":"additional","affiliation":[]},{"given":"Pedro","family":"Barquinha","sequence":"additional","affiliation":[]},{"given":"Rodrigo","family":"Martins","sequence":"additional","affiliation":[]},{"given":"Elvira","family":"Fortunato","sequence":"additional","affiliation":[]}],"member":"78","reference":[{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0010","doi-asserted-by":"crossref","first-page":"100","DOI":"10.3390\/fi11040100","article-title":"Edge computing: a survey on the hardware requirements in the Internet of Things World","volume":"11","author":"Capra","year":"2019","journal-title":"Fut. Internet"},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0015","doi-asserted-by":"crossref","first-page":"164","DOI":"10.4236\/jcc.2015.35021","article-title":"Internet of Things (IoT): a literature review","volume":"03","author":"Madakam","year":"2015","journal-title":"J. Comput. Commun."},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0020","first-page":"1267","article-title":"Low-temperature and low-voltage, solution-processed metal oxide n-TFTs and flexible circuitry on large-area polyimide foil","volume":"2","author":"Rockel\u00e9","year":"2011","journal-title":"Proc. Int. Disp. Work"},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0025","doi-asserted-by":"crossref","first-page":"5526","DOI":"10.1002\/adma.201202949","article-title":"Fabrication of transistors on flexible substrates: from mass-printing to high-resolution alternative lithography strategies","volume":"24","author":"Moonen","year":"2012","journal-title":"Adv. Mater."},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0030","doi-asserted-by":"crossref","DOI":"10.1063\/1.4953034","article-title":"Metal oxide semiconductor thin-film transistors for flexible electronics","volume":"3","author":"Petti","year":"2016","journal-title":"Appl. Phys. Rev."},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0035","doi-asserted-by":"crossref","first-page":"125","DOI":"10.1002\/sdtp.12499","article-title":"12-3: a 5.5 inch FFS-LCD driven by soluble-metal-oxide and implementation in production line through BCE TFT structure","volume":"49","author":"Huang","year":"2018","journal-title":"SID Symp. Dig. Tech. Pap."},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0040","doi-asserted-by":"crossref","first-page":"2945","DOI":"10.1002\/adma.201103228","article-title":"Oxide semiconductor thin-film transistors: a review of recent advances","volume":"24","author":"Fortunato","year":"2012","journal-title":"Adv. Mater."},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0045","doi-asserted-by":"crossref","DOI":"10.1063\/1.4953034","article-title":"Metal oxide semiconductor thin-film transistors for flexible electronics","volume":"3","author":"Petti","year":"2016","journal-title":"Appl. Phys. Rev."},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0050","doi-asserted-by":"crossref","first-page":"2009","DOI":"10.1063\/1.3157265","article-title":"Solution-processed InGaZnO-based thin film transistors for printed electronics applications","volume":"95","author":"Lim","year":"2009","journal-title":"Appl. Phys. Lett."},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0055","doi-asserted-by":"crossref","first-page":"H135","DOI":"10.1149\/1.2666588","article-title":"High-performance, spin-coated zinc tin oxide thin-film transistors","volume":"10","author":"Chang","year":"2007","journal-title":"Electrochem. Solid-State Lett."},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0060","doi-asserted-by":"crossref","first-page":"2750","DOI":"10.1021\/ja068876e","article-title":"Stable, solution-processed, high-mobility ZnO thin-film transistors","volume":"129","author":"Ong","year":"2007","journal-title":"J. Am. Chem. Soc."},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0065","doi-asserted-by":"crossref","first-page":"843","DOI":"10.1002\/adma.200600961","article-title":"A general route to printable high-mobility transparent amorphous oxide semiconductors","volume":"19","author":"Lee","year":"2007","journal-title":"Adv. Mater."},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0070","doi-asserted-by":"crossref","first-page":"12580","DOI":"10.1021\/ja804262z","article-title":"High performance solution-processed indium oxide thin-film transistors","volume":"130","author":"Kim","year":"2008","journal-title":"J. Am. Chem. Soc."},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0075","doi-asserted-by":"crossref","first-page":"433001","DOI":"10.1088\/0022-3727\/49\/43\/433001","article-title":"The 2016 oxide electronic materials and oxide interfaces roadmap","volume":"49","author":"Lorenz","year":"2016","journal-title":"J. Phys. D Appl. Phys."},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0080","doi-asserted-by":"crossref","first-page":"79","DOI":"10.1080\/15980316.2013.806274","article-title":"Recent advances in low-temperature solution-processed oxide backplanes","volume":"14","author":"Heo","year":"2013","journal-title":"J. Inf. Disp."},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0085","doi-asserted-by":"crossref","first-page":"e45","DOI":"10.1038\/am.2013.11","article-title":"An \u2018aqueous route\u2019 for the fabrication of low-temperature-processable oxide flexible transparent thin-film transistors on plastic substrates","volume":"5","author":"Hwan Hwang","year":"2013","journal-title":"NPG Asia Mater."},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0090","doi-asserted-by":"crossref","first-page":"2085","DOI":"10.1038\/srep02085","article-title":"Solution-processed flexible fluorine-doped indium zinc oxide thin-film transistors fabricated on plastic film at low temperature","volume":"3","author":"Seo","year":"2013","journal-title":"Sci. Rep."},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0095","doi-asserted-by":"crossref","first-page":"45","DOI":"10.1038\/nmat2914","article-title":"Low-temperature, high-performance solution-processed metal oxide thin-film transistors formed by a \u2018sol-gel on chip\u2019 process","volume":"10","author":"Banger","year":"2011","journal-title":"Nat. Mater."},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0100","doi-asserted-by":"crossref","first-page":"45","DOI":"10.1038\/nmat2914","article-title":"Low-temperature, high-performance solution-processed metal oxide thin-film transistors formed by a \u2018sol-gel on chip\u2019 process","volume":"10","author":"Banger","year":"2011","journal-title":"Nat. Mater."},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0105","doi-asserted-by":"crossref","first-page":"117","DOI":"10.1016\/j.jiec.2018.07.035","article-title":"Effects of process variables on aqueous-based AlOx insulators for high-performance solution-processed oxide thin-film transistors","volume":"68","author":"Huh","year":"2018","journal-title":"J. Ind. Eng. Chem."},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0110","doi-asserted-by":"crossref","first-page":"972","DOI":"10.3390\/ma10080972","article-title":"A simple method for high-performance, solution-processed, amorphous ZrO2 gate insulator TFT with a high concentration precursor","volume":"10","author":"Cai","year":"2017","journal-title":"Materials (Basel)"},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0115","doi-asserted-by":"crossref","first-page":"2027","DOI":"10.1039\/C3CS60222B","article-title":"UV-assisted nucleation and growth of oxide films from chemical solutions","volume":"43","author":"Nakajima","year":"2014","journal-title":"Chem. Soc. Rev."},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0120","doi-asserted-by":"crossref","first-page":"2","DOI":"10.1039\/C7TC00169J","article-title":"Rapid laser-induced photochemical conversion of sol-gel precursors to In2O3 layers and their application in thin-film transistors","volume":"5","author":"Dellis","year":"2017","journal-title":"J. Mater. Chem. C"},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0125","doi-asserted-by":"crossref","first-page":"2807","DOI":"10.1002\/adfm.201500545","article-title":"In-depth studies on rapid photochemical activation of various sol-gel metal oxide films for flexible transparent electronics","volume":"25","author":"Park","year":"2015","journal-title":"Adv. Funct. Mater."},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0130","doi-asserted-by":"crossref","first-page":"128","DOI":"10.1038\/nature11434","article-title":"Flexible metal-oxide devices made by room-temperature photochemical activation of sol-gel films","volume":"489","author":"Kim","year":"2012","journal-title":"Nature"},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0135","doi-asserted-by":"crossref","first-page":"1400206","DOI":"10.1002\/admi.201400206","article-title":"UV-assisted low temperature oxide dielectric films for TFT applications","volume":"1","author":"Hwang","year":"2014","journal-title":"Adv. Mater. Interfaces"},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0140","first-page":"1906022","article-title":"Recent progress in photonic processing of metal-oxide transistors","author":"Yarali","year":"2019","journal-title":"Adv. Funct. Mater."},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0145","doi-asserted-by":"crossref","first-page":"3164","DOI":"10.1109\/JSEN.2014.2375203","article-title":"Technologies for printing sensors and electronics over large flexible substrates: a review","volume":"15","author":"Khan","year":"2015","journal-title":"IEEE Sens. J."},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0150","doi-asserted-by":"crossref","first-page":"205","DOI":"10.1021\/cr9001275","article-title":"High-k organic, inorganic, and hybrid dielectrics for low-voltage organic field-effect transistors","volume":"110","author":"Ortiz","year":"2010","journal-title":"Chem. Rev."},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0155","doi-asserted-by":"crossref","first-page":"37277","DOI":"10.1021\/acsami.8b12895","article-title":"Scalable, high-performance printed InOx transistors enabled by ultraviolet-annealed printed high-k AlOx gate dielectrics","volume":"10","author":"Scheideler","year":"2018","journal-title":"ACS Appl. Mater. Interfaces"},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0160","doi-asserted-by":"crossref","first-page":"5043","DOI":"10.1002\/adma.201502239","article-title":"Large-scale precise printing of ultrathin sol-gel oxide dielectrics for directly patterned solution-processed metal oxide transistor arrays","volume":"27","author":"Lee","year":"2015","journal-title":"Adv. Mater."},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0165","article-title":"Printed, highly stable metal oxide thin-film transistors with ultra-thin high-\u03ba oxide dielectric","volume":"1901071","author":"Carlos","year":"2020","journal-title":"Adv. Electron. Mater."},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0170","series-title":"J. Organomet. Chem.","first-page":"303","article-title":"Metal alkoxides","author":"Bradley","year":"2007"},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0175","doi-asserted-by":"crossref","first-page":"312001","DOI":"10.1088\/1361-6528\/ab1860","article-title":"Solution-processed metal-oxide thin-film transistors: a review of recent developments","volume":"30","author":"Chen","year":"2019","journal-title":"Nanotechnology"},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0180","doi-asserted-by":"crossref","first-page":"382","DOI":"10.1038\/nmat3011","article-title":"Low-temperature fabrication of high-performance metal oxide thin-film electronics via combustion processing","volume":"10","author":"Kim","year":"2011","journal-title":"Nat. Mater."},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0185","series-title":"Dev. Combust. Technol.","first-page":"13","article-title":"Solution combustion synthesis: applications in oxide electronics","author":"Branquinho","year":"2016"},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0190","doi-asserted-by":"crossref","first-page":"2390","DOI":"10.1002\/adma.201405400","article-title":"Ultra-flexible, \u201cinvisible\u201d thin-film transistors enabled by amorphous metal oxide\/polymer channel layer blends","volume":"27","author":"Yu","year":"2015","journal-title":"Adv. Mater."},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0195","doi-asserted-by":"crossref","DOI":"10.1088\/1361-6463\/50\/6\/065106","article-title":"Solution based zinc tin oxide TFTs: the dual role of the organic solvent","volume":"50","author":"Salgueiro","year":"2017","journal-title":"J. Phys. D Appl. Phys."},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0200","doi-asserted-by":"crossref","first-page":"2921","DOI":"10.1021\/acs.chemmater.6b05200","article-title":"Impact of relative humidity during spin-deposition of metal oxide thin films from aqueous solution precursors","volume":"29","author":"Plassmeyer","year":"2017","journal-title":"Chem. Mater."},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0205","doi-asserted-by":"crossref","first-page":"113514","DOI":"10.1063\/1.4895830","article-title":"Rapid low-temperature processing of metal-oxide thin film transistors with combined far ultraviolet and thermal annealing","volume":"105","author":"Lepp\u00e4niemi","year":"2014","journal-title":"Appl. Phys. Lett."},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0210","doi-asserted-by":"crossref","first-page":"31100","DOI":"10.1021\/acsami.6b06321","article-title":"UV-mediated photochemical treatment for low-temperature oxide-based thin-film transistors","volume":"8","author":"Carlos","year":"2016","journal-title":"ACS Appl. Mater. Interfaces"},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0215","doi-asserted-by":"crossref","first-page":"82","DOI":"10.1007\/s13391-014-4209-0","article-title":"Rapid curing of solution-processed zinc oxide films by pulse-light annealing for thin-film transistor applications","volume":"11","author":"Kim","year":"2015","journal-title":"Electron. Mater. Lett."},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0220","doi-asserted-by":"crossref","first-page":"11724","DOI":"10.1039\/C7TC03721J","article-title":"Sub-second photonic processing of solution-deposited single layer and heterojunction metal oxide thin-film transistors using a high-power xenon flash lamp","volume":"5","author":"Tetzner","year":"2017","journal-title":"J. Mater. Chem. C"},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0225","article-title":"Inkjet-printed In-Ga-Zn oxide thin-film transistors with laser spike annealing","author":"Huang","year":"2017","journal-title":"J. Electron. Mater."},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0230","doi-asserted-by":"crossref","first-page":"13380","DOI":"10.1021\/acsami.8b22458","article-title":"Intense pulsed light annealing process of indium-gallium-zinc-oxide semiconductors via flash white light combined with deep-UV and near-infrared drying for high-performance thin-film transistors","volume":"11","author":"Moon","year":"2019","journal-title":"ACS Appl. Mater. Interfaces"},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0235","doi-asserted-by":"crossref","first-page":"4888","DOI":"10.1109\/TED.2019.2941264","article-title":"Solution-processed oxide complementary inverter via laser annealing and inkjet printing","volume":"66","author":"Chen","year":"2019","journal-title":"IEEE Trans. Electron Devices"},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0240","doi-asserted-by":"crossref","first-page":"8660","DOI":"10.1007\/s10854-018-8880-z","article-title":"Employment of rapid thermal annealing for solution-processed InGaZnO thin film transistors","volume":"29","author":"Kwak","year":"2018","journal-title":"J. Mater. Sci. Mater. Electron."},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0245","doi-asserted-by":"crossref","first-page":"30581","DOI":"10.1021\/acsami.8b11111","article-title":"Effective atmospheric-pressure plasma treatment toward high-performance solution-processed oxide thin-film transistors","volume":"10","author":"Park","year":"2018","journal-title":"ACS Appl. Mater. Interfaces"},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0250","doi-asserted-by":"crossref","first-page":"1700350","DOI":"10.1002\/pssa.201700350","article-title":"Performance enhancement of solution-derived zinc-tin-oxide thin film transistors by low-temperature microwave irradiation","volume":"214","author":"Cho","year":"2017","journal-title":"Phys. Status Solidi"},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0255","doi-asserted-by":"crossref","DOI":"10.1063\/1.4893470","article-title":"Effects of hydrogen plasma treatment on the electrical behavior of solution-processed ZnO transistors","volume":"116","author":"Jeong","year":"2014","journal-title":"J. Appl. Phys."},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0260","doi-asserted-by":"crossref","first-page":"23","DOI":"10.1016\/j.jcrysgro.2011.01.044","article-title":"Low-temperature soluble InZnO thin film transistors by microwave annealing","volume":"326","author":"Song","year":"2011","journal-title":"J. Cryst. Growth"},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0265","doi-asserted-by":"crossref","first-page":"12491","DOI":"10.1039\/c2jm16846d","article-title":"Simultaneous modification of pyrolysis and densification for low-temperature solution-processed flexible oxide thin-film transistors","volume":"22","author":"Rim","year":"2012","journal-title":"J. Mater. Chem."},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0270","doi-asserted-by":"crossref","first-page":"485","DOI":"10.1088\/0268-1242\/15\/5\/308","article-title":"Fundamental limit of gate oxide thickness scaling in advanced MOSFETs","volume":"15","author":"Hirose","year":"2000","journal-title":"Semicond. Sci. Technol."},{"year":"2017","series-title":"Nano-Cmos Gate Dielectric Engineering","author":"Iwong","key":"10.1016\/B978-0-12-819718-9.00003-0_bb0275"},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0280","doi-asserted-by":"crossref","first-page":"1706364","DOI":"10.1002\/adma.201706364","article-title":"Solution processed metal oxide high-\u03ba dielectrics for emerging transistors and circuits","volume":"30","author":"Liu","year":"2018","journal-title":"Adv. Mater."},{"year":"2003","series-title":"High-k Gate Dielectrics","author":"Houssa","key":"10.1016\/B978-0-12-819718-9.00003-0_bb0285"},{"year":"2007","series-title":"Molecular Electronics","author":"Petty","key":"10.1016\/B978-0-12-819718-9.00003-0_bb0290"},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0295","doi-asserted-by":"crossref","first-page":"21265","DOI":"10.1039\/c2jm34162j","article-title":"A solution-processed yttrium oxide gate insulator for high-performance all-solution-processed fully transparent thin film transistors","volume":"22","author":"Song","year":"2012","journal-title":"J. Mater. Chem."},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0300","doi-asserted-by":"crossref","first-page":"550","DOI":"10.1103\/PhysRevLett.20.550","article-title":"Dielectric definition of electronegativity","volume":"20","author":"Phillips","year":"1968","journal-title":"Phys. Rev. Lett."},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0305","doi-asserted-by":"crossref","first-page":"242901","DOI":"10.1063\/1.3455110","article-title":"Thermodynamic analysis of moisture absorption phenomena in high-permittivity oxides as gate dielectrics of advanced complementary-metal-oxide-semiconductor devices","volume":"96","author":"Zhao","year":"2010","journal-title":"Appl. Phys. Lett."},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0310","doi-asserted-by":"crossref","first-page":"222114","DOI":"10.1063\/1.4769091","article-title":"Low-voltage zinc oxide thin-film transistors with solution-processed channel and dielectric layers below 150\u00b0C","volume":"101","author":"Xu","year":"2012","journal-title":"Appl. Phys. Lett."},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0315","doi-asserted-by":"crossref","first-page":"15205","DOI":"10.1016\/j.ceramint.2017.08.055","article-title":"Room-temperature UV-ozone assisted solution process for zirconium oxide films with high dielectric properties","volume":"43","author":"Dong","year":"2017","journal-title":"Ceram. Int."},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0320","doi-asserted-by":"crossref","first-page":"1651","DOI":"10.1039\/c2tc00481j","article-title":"Solution-processed high-k HfO2 gate dielectric processed under softening temperature of polymer substrates","volume":"1","author":"Yoo","year":"2013","journal-title":"J. Mater. Chem. C"},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0325","doi-asserted-by":"crossref","first-page":"40428","DOI":"10.1021\/acsami.7b11752","article-title":"Boosting electrical performance of high-\u03ba nanomultilayer dielectrics and electronic devices by combining solution combustion synthesis and UV irradiation","volume":"9","author":"Carlos","year":"2017","journal-title":"ACS Appl. Mater. Interfaces"},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0330","doi-asserted-by":"crossref","first-page":"4249","DOI":"10.1166\/jnn.2019.16329","article-title":"UV-cured hafnium oxide-based gate dielectrics for low-voltage organic and amorphous oxide thin-film transistors","volume":"19","author":"Byun","year":"2019","journal-title":"J. Nanosci. Nanotechnol."},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0335","doi-asserted-by":"crossref","first-page":"35114","DOI":"10.1021\/acsami.7b09523","article-title":"Ultralow-temperature solution-processed aluminum oxide dielectrics via local structure control of nanoclusters","volume":"9","author":"Jo","year":"2017","journal-title":"ACS Appl. Mater. Interfaces"},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0340","doi-asserted-by":"crossref","first-page":"1182","DOI":"10.1002\/adma.201404296","article-title":"Highly stable and imperceptible electronics utilizing photoactivated heterogeneous sol-gel metal-oxide dielectrics and semiconductors","volume":"27","author":"Jo","year":"2015","journal-title":"Adv. Mater."},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0345","doi-asserted-by":"crossref","first-page":"2679","DOI":"10.1021\/acsami.7b10786","article-title":"High-mobility and hysteresis-free flexible oxide thin-film transistors and circuits by using bilayer sol-gel gate dielectrics","volume":"10","author":"Jo","year":"2018","journal-title":"ACS Appl. Mater. Interfaces"},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0350","article-title":"A review of low-temperature solution-processed metal oxide thin-film transistors for flexible electronics","volume":"1904632","author":"Park","year":"2019","journal-title":"Adv. Funct. Mater."},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0355","doi-asserted-by":"crossref","first-page":"1","DOI":"10.1007\/s10971-015-3879-x","article-title":"Cleaning and anti-reflective (AR) hydrophobic coating of glass surface: a review from materials science perspective","volume":"77","author":"Dey","year":"2016","journal-title":"J. Sol-Gel Sci. Technol."},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0360","doi-asserted-by":"crossref","first-page":"1500086","DOI":"10.1002\/aelm.201500086","article-title":"Fully inkjet-printed transparent oxide thin film transistors using a fugitive wettability switch","volume":"1","author":"Jang","year":"2015","journal-title":"Adv. Electron. Mater."},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0365","first-page":"51","article-title":"High-performance spin-coated aluminum oxide dielectric fabricated by a simple oxygen plasma-treatment process","author":"Wei","year":"2018","journal-title":"J. Phys. D Appl. Phys."},{"year":"2014","series-title":"Roll-To-Roll Printing and Coating Techniques for Manufacturing Large-Area Flexible Organic Electronics","author":"Roth","key":"10.1016\/B978-0-12-819718-9.00003-0_bb0370"},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0375","doi-asserted-by":"crossref","first-page":"6249","DOI":"10.1016\/j.tsf.2010.04.006","article-title":"Characteristics of gravure printed InGaZnO thin films as an active channel layer in thin film transistors","volume":"518","author":"Choi","year":"2010","journal-title":"Thin Solid Films"},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0380","doi-asserted-by":"crossref","first-page":"2871","DOI":"10.1109\/TED.2015.2449665","article-title":"Engineering of flexo- and gravure-printed indium-zinc-oxide semiconductor layers for high-performance thin-film transistors","volume":"62","author":"Spiehl","year":"2015","journal-title":"IEEE Trans. Electron. Devices"},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0385","series-title":"Print. Electron.","first-page":"106","article-title":"Printing processes and equipments","author":"Lin","year":"2016"},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0390","doi-asserted-by":"crossref","DOI":"10.1126\/sciadv.1601660","article-title":"Ultrathin high-resolution flexographic printing using nanoporous stamps","volume":"2","author":"Kim","year":"2016","journal-title":"Sci. Adv."},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0395","doi-asserted-by":"crossref","first-page":"634","DOI":"10.1016\/j.apsusc.2014.09.106","article-title":"Characteristics of flexographic printed indium-zinc-oxide thin films as an active semiconductor layer in thin film field-effect transistors","volume":"320","author":"Dilfer","year":"2014","journal-title":"Appl. Surf. Sci."},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0400","doi-asserted-by":"crossref","first-page":"7168","DOI":"10.1002\/adma.201502569","article-title":"Flexography-printed In2O3 semiconductor layers for high-mobility thin-film transistors on flexible plastic substrate","volume":"27","author":"Lepp\u00e4niemi","year":"2015","journal-title":"Adv. Mater."},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0405","article-title":"Low-temperature reducible particle\u2014free screen\u2014printable silver ink for the fabrication of high conductive electrodes","author":"Pujar","year":"2019","journal-title":"J. Mater. Sci. Mater. Electron."},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0410","doi-asserted-by":"crossref","first-page":"490","DOI":"10.1002\/sdtp.10437","article-title":"33.5: fabrication of an all-screen printed oxide semiconductor thin film transistor active-matrix backplane","volume":"46","author":"Fukada","year":"2015","journal-title":"SID Symp. Dig. Tech. Pap."},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0415","doi-asserted-by":"crossref","first-page":"169","DOI":"10.3390\/nano9020169","article-title":"Fully printed zinc oxide electrolyte-gated transistors on paper","volume":"9","author":"Carvalho","year":"2019","journal-title":"Nanomaterials"},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0420","doi-asserted-by":"crossref","DOI":"10.1088\/2058-8585\/aa9f00","article-title":"Reverse-offset for roll-to-roll high-resolution printing","volume":"3","author":"Sneck","year":"2018","journal-title":"Flex. Print. Electron."},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0425","doi-asserted-by":"crossref","first-page":"1602736","DOI":"10.1002\/adma.201602736","article-title":"Recent progress in the development of printed thin-film transistors and circuits with high-resolution printing technology","volume":"29","author":"Fukuda","year":"2017","journal-title":"Adv. Mater."},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0430","doi-asserted-by":"crossref","first-page":"1348","DOI":"10.1889\/1.3256550","article-title":"P-185L: late-news poster: direct patterning of metal electrodes for TFT-LCD fabrication","volume":"40","author":"Moon","year":"2009","journal-title":"SID Symp. Dig. Tech. Pap."},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0435","doi-asserted-by":"crossref","first-page":"24339","DOI":"10.1021\/acsami.8b07465","article-title":"Reverse offset printing of semidried metal acetylacetonate layers and its application to a solution-processed IGZO TFT fabrication","volume":"10","author":"Kusaka","year":"2018","journal-title":"ACS Appl. Mater. Interfaces"},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0440","doi-asserted-by":"crossref","first-page":"1156","DOI":"10.1021\/acsami.5b08969","article-title":"High performance metal oxide field-effect transistors with a reverse offset printed Cu source\/drain electrode","volume":"8","author":"Han","year":"2016","journal-title":"ACS Appl. Mater. Interfaces"},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0445","first-page":"276","article-title":"Electrical characteristics of InZnO3 transistors fabricated by reverse offset printing","volume":"16","author":"Yang","year":"2015","journal-title":"J. Ceram. Process. Res."},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0450","doi-asserted-by":"crossref","first-page":"1","DOI":"10.1002\/aelm.201500145","article-title":"Reverse-offset printing optimized for scalable organic thin-film transistors with submicrometer channel lengths","volume":"1","author":"Fukuda","year":"2015","journal-title":"Adv. Electron. Mater."},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0455","doi-asserted-by":"crossref","first-page":"1900272","DOI":"10.1002\/aelm.201900272","article-title":"Reverse-offset printing of metal-nitrate-based metal oxide semiconductor ink for flexible TFTs","volume":"5","author":"Lepp\u00e4niemi","year":"2019","journal-title":"Adv. Electron. Mater."},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0465","doi-asserted-by":"crossref","first-page":"11578","DOI":"10.1021\/am4025774","article-title":"Inkjet-printed In2O3 thin-film transistor below 200\u00b0C","volume":"5","author":"Lee","year":"2013","journal-title":"ACS Appl. Mater. Interfaces"},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0470","doi-asserted-by":"crossref","first-page":"229","DOI":"10.1002\/adfm.200700859","article-title":"Self-organization of ink-jet-printed triisopropylsilylethynyl pentacene via evaporation-induced flows in a drying droplet","volume":"18","author":"Lim","year":"2008","journal-title":"Adv. Funct. Mater."},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0475","doi-asserted-by":"crossref","DOI":"10.1063\/1.5000313","article-title":"High performance inkjet-printed metal oxide thin film transistors via addition of insulating polymer with proper molecular weight","volume":"112","author":"Sun","year":"2018","journal-title":"Appl. Phys. Lett."},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0480","doi-asserted-by":"crossref","first-page":"7495","DOI":"10.1039\/C7TC01303E","article-title":"Inkjet printing of oxide thin film transistor arrays with small spacing with polymer-doped metal nitrate aqueous ink","volume":"5","author":"Wu","year":"2017","journal-title":"J. Mater. Chem. C"},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0485","doi-asserted-by":"crossref","first-page":"8194","DOI":"10.1021\/acsami.7b00435","article-title":"All inkjet-printed metal-oxide thin-film transistor array with good stability and uniformity using surface-energy patterns","volume":"9","author":"Li","year":"2017","journal-title":"ACS Appl. Mater. Interfaces"},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0490","doi-asserted-by":"crossref","first-page":"22408","DOI":"10.1021\/acsami.8b04892","article-title":"High-performance all-printed amorphous oxide FETs and logics with electronically compatible electrode\/channel interface","volume":"10","author":"Sharma","year":"2018","journal-title":"ACS Appl. Mater. Interfaces"},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0495","doi-asserted-by":"crossref","first-page":"844","DOI":"10.3390\/app7080844","article-title":"Amorphous InGaZnO thin film transistor fabricated with printed silver salt ink source\/drain electrodes","volume":"7","author":"Yang","year":"2017","journal-title":"Appl. Sci."},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0500","doi-asserted-by":"crossref","first-page":"3220","DOI":"10.1039\/C7TC05679F","article-title":"High performance solution processed oxide thin-film transistors with inkjet printed Ag source-drain electrodes","volume":"6","author":"Gillan","year":"2018","journal-title":"J. Mater. Chem. C"},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0505","doi-asserted-by":"crossref","first-page":"8774","DOI":"10.1021\/acsami.6b14654","article-title":"Far-UV annealed inkjet-printed In2O3 semiconductor layers for thin-film transistors on a flexible polyethylene naphthalate substrate","volume":"9","author":"Lepp\u00e4niemi","year":"2017","journal-title":"ACS Appl. Mater. Interfaces"},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0510","doi-asserted-by":"crossref","DOI":"10.1088\/1361-6528\/aab7a2","article-title":"High performance printed oxide field-effect transistors processed using photonic curing","volume":"29","author":"Garlapati","year":"2018","journal-title":"Nanotechnology"},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0515","first-page":"1","article-title":"Inkjet-printed and deep-UV-annealed YAlOx dielectrics for high-performance IGZO thin-film transistors on flexible substrates","volume":"1800843","author":"Bolat","year":"2019","journal-title":"Adv. Electron. Mater."},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0520","doi-asserted-by":"crossref","first-page":"1707600","DOI":"10.1002\/adma.201707600","article-title":"Printed electronics based on inorganic semiconductors: from processes and materials to devices","volume":"30","author":"Garlapati","year":"2018","journal-title":"Adv. Mater."},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0525","doi-asserted-by":"crossref","first-page":"102108","DOI":"10.1063\/1.3691177","article-title":"Patterned oxide semiconductor by electrohydrodynamic jet printing for transparent thin film transistors","volume":"100","author":"Lee","year":"2012","journal-title":"Appl. Phys. Lett."},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0530","doi-asserted-by":"crossref","first-page":"170","DOI":"10.1016\/j.materresbull.2019.03.009","article-title":"Patterning and passivation effects of zinc-tin-oxide thin-film transistors using an electrohydrodynamic jet printer","volume":"114","author":"Kwack","year":"2019","journal-title":"Mater. Res. Bull."},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0535","doi-asserted-by":"crossref","first-page":"3","DOI":"10.1109\/JDT.2015.2441834","article-title":"Electrohydrodynamic jet printed indium-zinc-oxide thin-film transistors","volume":"12","author":"Kwack","year":"2016","journal-title":"J. Disp. Technol."},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0540","doi-asserted-by":"crossref","first-page":"11167","DOI":"10.1021\/am5009826","article-title":"Electrohydrodynamic jet-printed zinc-tin oxide TFTs and their bias stability","volume":"6","author":"Lee","year":"2014","journal-title":"ACS Appl. Mater. Interfaces"},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0545","doi-asserted-by":"crossref","first-page":"17113","DOI":"10.1039\/C6NR05577J","article-title":"High-resolution electrohydrodynamic inkjet printing of stretchable metal oxide semiconductor transistors with high performance","volume":"8","author":"Kim","year":"2016","journal-title":"Nanoscale"},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0550","doi-asserted-by":"crossref","first-page":"505301","DOI":"10.1088\/0957-4484\/23\/50\/505301","article-title":"Fabrication of platinum-decorated single-walled carbon nanotube based hydrogen sensors by aerosol jet printing","volume":"23","author":"Liu","year":"2012","journal-title":"Nanotechnology"},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0555","doi-asserted-by":"crossref","first-page":"3413","DOI":"10.1002\/adma.201300211","article-title":"Printed, sub-2V ZnO electrolyte gated transistors and inverters on plastic","volume":"25","author":"Hong","year":"2013","journal-title":"Adv. Mater."},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0560","doi-asserted-by":"crossref","first-page":"7032","DOI":"10.1002\/adma.201401330","article-title":"Aerosol jet printed, Sub-2 v complementary circuits constructed from P- and N-type electrolyte gated transistors","volume":"26","author":"Hong","year":"2014","journal-title":"Adv. Mater."},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0565","doi-asserted-by":"crossref","first-page":"1","DOI":"10.1002\/aelm.201600369","article-title":"2D insulator-metal transition in aerosol-jet-printed electrolyte-gated indium oxide thin film transistors","volume":"3","author":"Xie","year":"2017","journal-title":"Adv. Electron. Mater."},{"year":"2013","series-title":"Applications of Organic and Printed Electronics","author":"Hoth","key":"10.1016\/B978-0-12-819718-9.00003-0_bb0570"},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0575","doi-asserted-by":"crossref","first-page":"29","DOI":"10.1016\/j.carbpol.2016.04.034","article-title":"A new photoelectric ink based on nanocellulose\/CdS quantum dots for screen-printing","volume":"148","author":"Tang","year":"2016","journal-title":"Carbohydr. Polym."},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0580","doi-asserted-by":"crossref","first-page":"1220","DOI":"10.1021\/acsomega.6b00242","article-title":"Screen-printable electronic ink of ultrathin boron nitride nanosheets","volume":"1","author":"Joseph","year":"2016","journal-title":"ACS Omega"},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0585","doi-asserted-by":"crossref","first-page":"1352","DOI":"10.1109\/ICMA.2012.6284333","article-title":"A novel XY-Theta alignment stage for screen printing and its accuracy analysis","volume":"2012","author":"Liang","year":"2012","journal-title":"2012 IEEE Int. Conf. Mechatronics Autom. ICMA"},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0590","doi-asserted-by":"crossref","first-page":"586","DOI":"10.1002\/adfm.201504030","article-title":"Conductive screen printing inks by gelation of graphene dispersions","volume":"26","author":"Arapov","year":"2016","journal-title":"Adv. Funct. Mater."},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0595","doi-asserted-by":"crossref","first-page":"12769","DOI":"10.1021\/nn505979j","article-title":"Screen printing as a scalable and low-cost approach for rigid and flexible thin-film transistors using separated carbon nanotubes","volume":"8","author":"Cao","year":"2014","journal-title":"ACS Nano"},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0600","doi-asserted-by":"crossref","first-page":"1","DOI":"10.1002\/admt.201700011","article-title":"Highly conductive semitransparent graphene circuits screen-printed from water-based graphene oxide ink","volume":"2","author":"Overgaard","year":"2017","journal-title":"Adv. Mater. Technol."},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0605","doi-asserted-by":"crossref","first-page":"1935","DOI":"10.1002\/adma.201004692","article-title":"Paper electronics","volume":"23","author":"Tobj\u00f6rk","year":"2011","journal-title":"Adv. Mater."},{"article-title":"Fabrication of a high-resolution roll for gravure printing of 2 \u03bcm features","year":"2015","author":"Grau","key":"10.1016\/B978-0-12-819718-9.00003-0_bb0610"},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0615","doi-asserted-by":"crossref","first-page":"1","DOI":"10.1088\/2058-8585\/1\/2\/023002","article-title":"Gravure-printed electronics: recent progress in tooling development, understanding of printing physics, and realization of printed devices","volume":"1","author":"Grau","year":"2016","journal-title":"Flex. Print. Electron."},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0620","doi-asserted-by":"crossref","first-page":"8268","DOI":"10.1002\/chem.201700997","article-title":"Highly conductive water-based polymer\/graphene nanocomposites for printed electronics","volume":"23","author":"Koutsioukis","year":"2017","journal-title":"Chem. A Eur. J."},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0625","doi-asserted-by":"crossref","first-page":"3595","DOI":"10.1007\/s00170-016-9685-y","article-title":"Multi-response optimization of R2R gravure printing using orthogonal array and principal component analysis as a weighting factor","volume":"90","author":"Nguyen","year":"2017","journal-title":"Int. J. Adv. Manuf. Technol."},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0630","article-title":"Low-voltage polyelectrolyte-gated polymer field-effect transistors gravure printed at high speed on flexible plastic substrates","author":"Thiburce","year":"2016","journal-title":"Adv. Electron. Mater."},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0635","doi-asserted-by":"crossref","first-page":"126","DOI":"10.1016\/j.egypro.2015.03.296","article-title":"Evaluation of flexographic printing technology for multi-busbar solar cells","volume":"67","author":"Lorenz","year":"2015","journal-title":"Energy Procedia"},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0640","doi-asserted-by":"crossref","DOI":"10.1088\/1361-6439\/aa8924","article-title":"Pattern size tolerance of reverse offset printing: a proximity deformation effect related to local PDMS slipping","volume":"27","author":"Kusaka","year":"2017","journal-title":"J. Micromech. Microeng."},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0645","doi-asserted-by":"crossref","DOI":"10.3390\/app7121302","article-title":"Printing speed and quality enhancement by controlling the surface energy of clich\u00e9 in reverse offset printing","volume":"7","author":"Cho","year":"2017","journal-title":"Appl. Sci."},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0650","doi-asserted-by":"crossref","first-page":"1","DOI":"10.1063\/1.4807782","article-title":"High-resolution inkjet printing of electrically conducting lines of silver nanoparticles by edge-enhanced twin-line deposition","volume":"102","author":"Bromberg","year":"2013","journal-title":"Appl. Phys. Lett."},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0655","doi-asserted-by":"crossref","first-page":"29","DOI":"10.1016\/j.coelec.2017.05.003","article-title":"Inkjet-printed electrochemical sensors","volume":"3","author":"Moya","year":"2017","journal-title":"Curr. Opin. Electrochem."},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0660","doi-asserted-by":"crossref","first-page":"1611","DOI":"10.1889\/1.2785628","article-title":"54.3: drop landing accuracy improvements in inkjet printed OLED displays","volume":"38","author":"Bruner","year":"2007","journal-title":"SID Symp. Dig. Tech. Pap."},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0665","doi-asserted-by":"crossref","first-page":"27900","DOI":"10.1021\/acsami.6b06838","article-title":"Fully printed and encapsulated SWCNT-based thin film transistors via a combination of R2R gravure and inkjet printing","volume":"8","author":"Homenick","year":"2016","journal-title":"ACS Appl. Mater. Interfaces"},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0670","doi-asserted-by":"crossref","DOI":"10.1088\/0957-4484\/27\/40\/405301","article-title":"Laser direct writing and inkjet printing for a sub-2 \u03bcm channel length MoS2 transistor with high-resolution electrodes","volume":"27","author":"Kwon","year":"2016","journal-title":"Nanotechnology"},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0675","doi-asserted-by":"crossref","first-page":"2101","DOI":"10.1002\/adma.200502422","article-title":"Ink-jet printing and microwave sintering of conductive silver tracks","volume":"18","author":"Perelaer","year":"2006","journal-title":"Adv. Mater."},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0680","doi-asserted-by":"crossref","first-page":"17113","DOI":"10.1039\/C6NR05577J","article-title":"High-resolution electrohydrodynamic inkjet printing of stretchable metal oxide semiconductor transistors with high performance","volume":"8","author":"Kim","year":"2016","journal-title":"Nanoscale"},{"year":"2018","series-title":"Electrohydrodynamic Direct-Writing for Flexible Electronic Manufacturing","author":"Yin","key":"10.1016\/B978-0-12-819718-9.00003-0_bb0685"},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0690","doi-asserted-by":"crossref","DOI":"10.1088\/0960-1317\/25\/4\/045006","article-title":"High-resolution electrohydrodynamic jet printing for the direct fabrication of 3D multilayer terahertz metamaterial of high refractive index","volume":"25","author":"Yudistira","year":"2015","journal-title":"J. Micromech. Microeng."},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0695","doi-asserted-by":"crossref","first-page":"6914","DOI":"10.1002\/adfm.201601605","article-title":"Polyfluorinated electrolyte for fully printed carbon nanotube electronics","volume":"26","author":"Li","year":"2016","journal-title":"Adv. Funct. Mater."},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0700","first-page":"316","article-title":"Aerosol jet printing of miniaturized, low power flexible micro-hotplates","volume":"1","author":"Khan","year":"2017","journal-title":"Proceedings"},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0705","doi-asserted-by":"crossref","DOI":"10.1115\/1.4034591","article-title":"Computational fluid dynamics modeling and online monitoring of aerosol jet printing process","volume":"139","author":"Salary","year":"2017","journal-title":"J. Manuf. Sci. Eng. Trans. ASME"},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0710","doi-asserted-by":"crossref","DOI":"10.1088\/2058-8585\/aa5af9","article-title":"Controlling and assessing the quality of aerosol jet printed features for large area and flexible electronics","volume":"2","author":"Smith","year":"2017","journal-title":"Flex. Print. Electron."},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0715","doi-asserted-by":"crossref","first-page":"17603","DOI":"10.1021\/ja808243k","article-title":"Aqueous inorganic inks for low-temperature fabrication of ZnO TFTs","volume":"130","author":"Meyers","year":"2008","journal-title":"J. Am. Chem. Soc."},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0720","doi-asserted-by":"crossref","first-page":"520","DOI":"10.1109\/JDT.2009.2024330","article-title":"Inkjet-printed high mobility transparent-oxide semiconductors","volume":"5","author":"Han","year":"2009","journal-title":"J. Disp. Technol."},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0725","doi-asserted-by":"crossref","first-page":"3135","DOI":"10.1039\/b822893k","article-title":"Inkjet printed high-mobility indium zinc tin oxide thin film transistors","volume":"19","author":"Lee","year":"2009","journal-title":"J. Mater. Chem."},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0730","doi-asserted-by":"crossref","first-page":"11149","DOI":"10.1021\/la901436p","article-title":"Inkjet-printed zinc tin oxide thin-film transistor","volume":"25","author":"Kim","year":"2009","journal-title":"Langmuir"},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0735","doi-asserted-by":"crossref","first-page":"6249","DOI":"10.1016\/j.tsf.2010.04.006","article-title":"Characteristics of gravure printed InGaZnO thin films as an active channel layer in thin film transistors","volume":"518","author":"Choi","year":"2010","journal-title":"Thin Solid Films"},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0740","doi-asserted-by":"crossref","first-page":"836","DOI":"10.1109\/LED.2010.2051404","article-title":"Ink-jet-printed zinc-tin-oxide thin-film transistors and circuits with rapid thermal annealing process","volume":"31","author":"Kim","year":"2010","journal-title":"IEEE Electron Device Lett."},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0745","doi-asserted-by":"crossref","first-page":"1614","DOI":"10.1021\/am201776p","article-title":"Reduced contact resistance in inkjet printed high-performance amorphous indium gallium zinc oxide transistors","volume":"4","author":"Hennek","year":"2012","journal-title":"ACS Appl. Mater. Interfaces"},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0750","doi-asserted-by":"crossref","first-page":"4236","DOI":"10.1039\/c3tc30530a","article-title":"Metal salt-derived In-Ga-Zn-O semiconductors incorporating formamide as a novel co-solvent for producing solution-processed, electrohydrodynamic-jet printed, high performance oxide transistors","volume":"1","author":"Jeong","year":"2013","journal-title":"J. Mater. Chem. C"},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0755","doi-asserted-by":"crossref","first-page":"11884","DOI":"10.1021\/am403585n","article-title":"Printed indium gallium zinc oxide transistors. Self-assembled nanodielectric effects on low-temperature combustion growth and carrier mobility","volume":"5","author":"Everaerts","year":"2013","journal-title":"ACS Appl. Mater. Interfaces"},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0760","doi-asserted-by":"crossref","first-page":"2625","DOI":"10.1021\/acsami.6b12586","article-title":"Soluble metal oxo alkoxide inks with advanced rheological properties for inkjet-printed thin-film transistors","volume":"9","author":"Meyer","year":"2017","journal-title":"ACS Appl. Mater. Interfaces"},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0765","doi-asserted-by":"crossref","first-page":"19643","DOI":"10.1021\/acsami.6b07204","article-title":"Coffee-ring defined short channels for inkjet-printed metal oxide thin-film transistors","volume":"8","author":"Li","year":"2016","journal-title":"ACS Appl. Mater. Interfaces"},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0770","doi-asserted-by":"crossref","first-page":"2189","DOI":"10.1002\/pssa.201600077","article-title":"Fully inkjet-printed metal-oxide thin-film transistors on plastic","volume":"213","author":"Zeumault","year":"2016","journal-title":"Phys. Status Solidi"},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0775","doi-asserted-by":"crossref","first-page":"1606062","DOI":"10.1002\/adfm.201606062","article-title":"Low-temperature-processed printed metal oxide transistors based on pure aqueous inks","volume":"27","author":"Scheideler","year":"2017","journal-title":"Adv. Funct. Mater."},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0780","doi-asserted-by":"crossref","first-page":"13957","DOI":"10.1021\/acsnano.9b05715","article-title":"Direct electrohydrodynamic patterning of high-performance all metal oxide thin-film electronics","volume":"13","author":"Liang","year":"2019","journal-title":"ACS Nano"},{"year":"2015","series-title":"Large Area and Flexible Electronics","author":"Caironi","key":"10.1016\/B978-0-12-819718-9.00003-0_bb0785"},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0790","doi-asserted-by":"crossref","first-page":"1334","DOI":"10.1016\/j.tsf.2011.04.149","article-title":"Multicomponent oxide thin-film transistors fabricated by a double-layer inkjet printing process","volume":"520","author":"Olziersky","year":"2011","journal-title":"Thin Solid Films"},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0795","doi-asserted-by":"crossref","first-page":"18704","DOI":"10.1021\/am504171u","article-title":"Aerosol jet printed p- and n-type electrolyte-gated transistors with a variety of electrode materials: exploring practical routes to printed electronics","volume":"6","author":"Hong","year":"2014","journal-title":"ACS Appl. Mater. Interfaces"},{"key":"10.1016\/B978-0-12-819718-9.00003-0_bb0800","doi-asserted-by":"crossref","first-page":"3220","DOI":"10.1039\/C7TC05679F","article-title":"High performance solution processed oxide thin-film transistors with inkjet printed Ag source-drain electrodes","volume":"6","author":"Gillan","year":"2018","journal-title":"J. Mater. Chem. C"}],"container-title":["Chemical Solution Synthesis for Materials Design and Thin Film Device Applications"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/api.elsevier.com\/content\/article\/PII:B9780128197189000030?httpAccept=text\/xml","content-type":"text\/xml","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/api.elsevier.com\/content\/article\/PII:B9780128197189000030?httpAccept=text\/plain","content-type":"text\/plain","content-version":"vor","intended-application":"text-mining"}],"deposited":{"date-parts":[[2025,8,22]],"date-time":"2025-08-22T01:53:13Z","timestamp":1755827593000},"score":1,"resource":{"primary":{"URL":"https:\/\/linkinghub.elsevier.com\/retrieve\/pii\/B9780128197189000030"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2021]]},"ISBN":["9780128197189"],"references-count":158,"URL":"https:\/\/doi.org\/10.1016\/b978-0-12-819718-9.00003-0","relation":{},"subject":[],"published":{"date-parts":[[2021]]}}}