{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,12,24]],"date-time":"2025-12-24T14:25:20Z","timestamp":1766586320670,"version":"build-2065373602"},"reference-count":54,"publisher":"Elsevier BV","issue":"5","license":[{"start":{"date-parts":[[2022,3,1]],"date-time":"2022-03-01T00:00:00Z","timestamp":1646092800000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/www.elsevier.com\/tdm\/userlicense\/1.0\/"},{"start":{"date-parts":[[2022,3,1]],"date-time":"2022-03-01T00:00:00Z","timestamp":1646092800000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/www.elsevier.com\/legal\/tdmrep-license"}],"funder":[{"DOI":"10.13039\/501100001871","name":"Funda\u00e7\u00e3o para a Ci\u00eancia e a Tecnologia","doi-asserted-by":"publisher","award":["UIDB\/04650\/2020"],"award-info":[{"award-number":["UIDB\/04650\/2020"]}],"id":[{"id":"10.13039\/501100001871","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100001409","name":"Department of Science and Technology, Ministry of Science and Technology, India","doi-asserted-by":"publisher","award":["ECR\/2017\/00006"],"award-info":[{"award-number":["ECR\/2017\/00006"]}],"id":[{"id":"10.13039\/501100001409","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100001843","name":"Science and Engineering Research Board","doi-asserted-by":"publisher","award":["20192055"],"award-info":[{"award-number":["20192055"]}],"id":[{"id":"10.13039\/501100001843","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":["elsevier.com","sciencedirect.com"],"crossmark-restriction":true},"short-container-title":["Ceramics International"],"published-print":{"date-parts":[[2022,3]]},"DOI":"10.1016\/j.ceramint.2021.11.152","type":"journal-article","created":{"date-parts":[[2021,11,19]],"date-time":"2021-11-19T10:41:10Z","timestamp":1637318470000},"page":"6131-6137","update-policy":"https:\/\/doi.org\/10.1016\/elsevier_cm_policy","source":"Crossref","is-referenced-by-count":24,"title":["Ferroelectric properties of ZrO2 films deposited on ITO-coated glass"],"prefix":"10.1016","volume":"48","author":[{"given":"J.P.B.","family":"Silva","sequence":"first","affiliation":[]},{"given":"K.C.","family":"Sekhar","sequence":"additional","affiliation":[]},{"given":"R.F.","family":"Negrea","sequence":"additional","affiliation":[]},{"given":"C.","family":"Ghica","sequence":"additional","affiliation":[]},{"given":"D.","family":"Dastan","sequence":"additional","affiliation":[]},{"given":"M.J.M.","family":"Gomes","sequence":"additional","affiliation":[]}],"member":"78","reference":[{"key":"10.1016\/j.ceramint.2021.11.152_bib1","doi-asserted-by":"crossref","first-page":"795","DOI":"10.1557\/mrc.2018.175","article-title":"Review and perspective on ferroelectric HfO2-based thin films for memory applications","volume":"8","author":"Park","year":"2018","journal-title":"MRS Commun."},{"key":"10.1016\/j.ceramint.2021.11.152_bib2","doi-asserted-by":"crossref","first-page":"7120","DOI":"10.1039\/D0TC01105C","article-title":"Improvements in the synaptic operations of ferroelectric field-effect transistors using Hf0.5Zr0.5O2 thin films controlled by oxygen partial pressures during the sputtering deposition process","volume":"8","author":"Min","year":"2020","journal-title":"J. Mater. Chem. C"},{"key":"10.1016\/j.ceramint.2021.11.152_bib3","doi-asserted-by":"crossref","first-page":"838","DOI":"10.1039\/C4EE03523B","article-title":"Ferroelectric materials for solar energy conversion: photoferroics revisited","volume":"8","author":"Butler","year":"2015","journal-title":"Energy Environ. Sci."},{"key":"10.1016\/j.ceramint.2021.11.152_bib4","doi-asserted-by":"crossref","first-page":"1807196","DOI":"10.1002\/adfm.201807196","article-title":"High-performance ferroelectric\u2013dielectric multilayered thin films for energy storage capacitors","volume":"29","author":"Silva","year":"2019","journal-title":"Adv. Funct. Mater."},{"key":"10.1016\/j.ceramint.2021.11.152_bib5","doi-asserted-by":"crossref","first-page":"2208","DOI":"10.1021\/acsenergylett.1c00313","article-title":"Advances in dielectric thin films for energy storage applications, revealing the promise of group IV binary oxides","volume":"6","author":"Silva","year":"2021","journal-title":"ACS Energy Lett."},{"key":"10.1016\/j.ceramint.2021.11.152_bib6","doi-asserted-by":"crossref","DOI":"10.1063\/1.5140612","article-title":"Room-temperature deposition of ferroelectric HfO2-based films by the sputtering method","volume":"116","author":"Mimura","year":"2020","journal-title":"Appl. Phys. Lett."},{"key":"10.1016\/j.ceramint.2021.11.152_bib7","doi-asserted-by":"crossref","first-page":"242","DOI":"10.1063\/1.1385184","article-title":"Polarization imprint and size effects in mesoscopic ferroelectric structures","volume":"79","author":"Alexe","year":"2021","journal-title":"Appl. Phys. Lett."},{"key":"10.1016\/j.ceramint.2021.11.152_bib8","doi-asserted-by":"crossref","first-page":"114113","DOI":"10.1063\/1.3667205","article-title":"Ferroelectricity in yttrium-doped hafnium oxide","volume":"110","author":"M\u00fcller","year":"2011","journal-title":"J. Appl. Phys."},{"key":"10.1016\/j.ceramint.2021.11.152_bib9","doi-asserted-by":"crossref","DOI":"10.1063\/1.5118737","article-title":"A comprehensive study on the mechanism of ferroelectric phase formation in hafnia-zirconia nanolaminates and superlattices","volume":"6","author":"Park","year":"2019","journal-title":"Appl. Phys. Rev."},{"key":"10.1016\/j.ceramint.2021.11.152_bib10","doi-asserted-by":"crossref","DOI":"10.1063\/1.5110894","article-title":"Dramatic impact of pressure and annealing temperature on the properties of sputtered ferroelectric HZO layers","volume":"7","author":"Bouaziz","year":"2019","journal-title":"Apl. Mater."},{"key":"10.1016\/j.ceramint.2021.11.152_bib11","doi-asserted-by":"crossref","first-page":"4677","DOI":"10.1039\/C7TC01200D","article-title":"A comprehensive study on the structural evolution of HfO2 thin films doped with various dopants","volume":"5","author":"Park","year":"2017","journal-title":"J. Mater. Chem. C"},{"key":"10.1016\/j.ceramint.2021.11.152_bib12","doi-asserted-by":"crossref","first-page":"11280","DOI":"10.1039\/D0NR02204G","article-title":"High polarization, endurance and retention in sub 5 nm Hf0.5Zr0.5O2 films","volume":"12","author":"Lyu","year":"2020","journal-title":"Nanoscale"},{"key":"10.1016\/j.ceramint.2021.11.152_bib13","doi-asserted-by":"crossref","first-page":"182905","DOI":"10.1063\/1.4983031","article-title":"Ferroelectric and piezoelectric properties of Hf1-xZrxO2 and pure ZrO2 films","volume":"110","author":"Starschich","year":"2017","journal-title":"Appl. Phys. Lett."},{"key":"10.1016\/j.ceramint.2021.11.152_bib14","doi-asserted-by":"crossref","first-page":"3801","DOI":"10.1021\/acs.cgd.0c00095","article-title":"Domain-matching epitaxy of ferroelectric Hf0.5Zr0.5O2 (111) on La2\/3Sr1\/3MnO3(001)","volume":"20","author":"Estand\u00eda","year":"2020","journal-title":"Cryst. Growth Des."},{"key":"10.1016\/j.ceramint.2021.11.152_bib15","article-title":"Kinetically stabilized ferroelectricity in bulk single-crystalline HfO2:Y","author":"Xu","year":"2021","journal-title":"Nat. Mater."},{"key":"10.1016\/j.ceramint.2021.11.152_bib16","doi-asserted-by":"crossref","first-page":"478","DOI":"10.1038\/s41586-020-2208-x","article-title":"Enhanced ferroelectricity in ultrathin films grown directly on silicon","volume":"580","author":"Cheema","year":"2020","journal-title":"Nature"},{"key":"10.1016\/j.ceramint.2021.11.152_bib17","doi-asserted-by":"crossref","first-page":"111013","DOI":"10.1016\/j.mee.2019.111013","article-title":"Ferroelectricity of Hf1-xZrxO2 thin films fabricated by 300 \u00b0C low temperature process with plasma-enhanced atomic layer deposition","volume":"215","author":"Onaya","year":"2019","journal-title":"Microelectron. Eng."},{"key":"10.1016\/j.ceramint.2021.11.152_bib18","doi-asserted-by":"crossref","first-page":"172902","DOI":"10.1063\/1.5026715","article-title":"Effect of film thickness on the ferroelectric and dielectric properties of low-temperature (400\u00b0C) Hf0 .5Zr0.5O2 films","volume":"112","author":"Kim","year":"2018","journal-title":"Appl. Phys. Lett."},{"key":"10.1016\/j.ceramint.2021.11.152_bib19","doi-asserted-by":"crossref","first-page":"10625","DOI":"10.1007\/s10854-017-6837-2","article-title":"Resistive switching properties of Hf1-xZrxO2 thin films for flexible memory applications","volume":"28","author":"Wu","year":"2017","journal-title":"J. Mater. Sci. Mater. Electron."},{"key":"10.1016\/j.ceramint.2021.11.152_bib20","doi-asserted-by":"crossref","first-page":"152901","DOI":"10.1063\/5.0035653","article-title":"Solution processed high performance ferroelectric Hf0.5Zr0.5O2 thin film transistor on glass substrate","volume":"118","author":"Hasan","year":"2021","journal-title":"Appl. Phys. Lett."},{"key":"10.1016\/j.ceramint.2021.11.152_bib21","doi-asserted-by":"crossref","DOI":"10.1063\/1.5031134","article-title":"Enhanced piezoelectricity of thin film hafnia-zirconia (HZO) by inorganic flexible substrates","volume":"113","author":"Hsain","year":"2018","journal-title":"Appl. Phys. Lett."},{"key":"10.1016\/j.ceramint.2021.11.152_bib22","doi-asserted-by":"crossref","first-page":"1135","DOI":"10.1016\/j.jeurceramsoc.2016.10.028","article-title":"Induction of ferroelectricity in nanoscale ZrO2 thin films on Pt electrode without post-annealing","volume":"37","author":"Lin","year":"2017","journal-title":"J. Eur. Ceram. Soc."},{"key":"10.1016\/j.ceramint.2021.11.152_bib23","doi-asserted-by":"crossref","first-page":"4038","DOI":"10.1016\/j.jeurceramsoc.2019.05.065","article-title":"Modulation of ferroelectricity and antiferroelectricity of nanoscale ZrO2 thin films using ultrathin interfacial layers","volume":"39","author":"Yi","year":"2019","journal-title":"J. Eur. Ceram. Soc."},{"key":"10.1016\/j.ceramint.2021.11.152_bib24","doi-asserted-by":"crossref","first-page":"SMMA04","DOI":"10.35848\/1347-4065\/ab80de","article-title":"Ferroelectric phase formation for undoped ZrO2 thin films by wet O2 annealing","volume":"59","author":"Shibayama","year":"2020","journal-title":"Jpn. J. Appl. Phys."},{"key":"10.1016\/j.ceramint.2021.11.152_bib25","doi-asserted-by":"crossref","first-page":"3669","DOI":"10.1039\/C9TC04801D","article-title":"Low-temperature crystallization and paraelectric\u2013ferroelectric phase transformation in nanoscale ZrO2 thin films induced by atomic layer plasma treatment","volume":"8","author":"Yi","year":"2020","journal-title":"J. Mater. Chem. C"},{"key":"10.1016\/j.ceramint.2021.11.152_bib26","doi-asserted-by":"crossref","first-page":"116536","DOI":"10.1016\/j.actamat.2020.116536","article-title":"Sub-7-nm textured ZrO2 with giant ferroelectricity","volume":"205","author":"Huang","year":"2021","journal-title":"Acta Mater."},{"key":"10.1016\/j.ceramint.2021.11.152_bib27","doi-asserted-by":"crossref","DOI":"10.1063\/1.4939660","article-title":"Ferroelectricity emerging in strained (111)-textured ZrO2 thin films","volume":"108","author":"Fan","year":"2016","journal-title":"Appl. Phys. Lett."},{"key":"10.1016\/j.ceramint.2021.11.152_bib28","doi-asserted-by":"crossref","first-page":"2106","DOI":"10.1021\/acsaelm.1c00122","article-title":"Stabilization of the ferroelectric phase in epitaxial Hf1-xZrxO2 enabling coexistence of ferroelectric and enhanced piezoelectric properties","volume":"3","author":"Song","year":"2021","journal-title":"ACS Appl. Electron. Mater."},{"key":"10.1016\/j.ceramint.2021.11.152_bib29","doi-asserted-by":"crossref","first-page":"14171","DOI":"10.1039\/D0TA04984K","article-title":"Energy storage performance of ferroelectric ZrO2 film capacitors: effect of HfO2:Al2O3 dielectric insert layer","volume":"8","author":"Silva","year":"2020","journal-title":"J. Mater. Chem."},{"key":"10.1016\/j.ceramint.2021.11.152_bib30","doi-asserted-by":"crossref","DOI":"10.1063\/1.4997681","article-title":"Doped ZrO2 for future lead free piezoelectric devices","volume":"123","author":"Starschich","year":"2018","journal-title":"J. Appl. Phys."},{"key":"10.1016\/j.ceramint.2021.11.152_bib31","first-page":"2100556","article-title":"Harnessing phase transitions in antiferroelectric ZrO2 using the size effect","author":"Lomenzo","year":"2021","journal-title":"Adv. Electron. Mater."},{"key":"10.1016\/j.ceramint.2021.11.152_bib32","doi-asserted-by":"crossref","first-page":"51383","DOI":"10.1021\/acsami.1c15875","volume":"13","author":"Silva","year":"2021","journal-title":"ACS Appl. Mater. Interfaces"},{"key":"10.1016\/j.ceramint.2021.11.152_bib33","doi-asserted-by":"crossref","first-page":"112901","DOI":"10.1063\/1.4962431","article-title":"Growth of (111)-oriented epitaxial and textured ferroelectric Y-doped HfO2 films for downscaled devices","volume":"109","author":"Katayama","year":"2016","journal-title":"Appl. Phys. Lett."},{"key":"10.1016\/j.ceramint.2021.11.152_bib34","doi-asserted-by":"crossref","first-page":"18","DOI":"10.1016\/j.solener.2018.03.072","article-title":"Ferroelectric photovoltaic characteristics of pulsed laser deposited 0.5Ba(Zr0.2Ti0.8)O3-0.5(Ba0.7Ca0.3)TiO3\/ZnO heterostructures","volume":"167","author":"Silva","year":"2018","journal-title":"Sol. Energy"},{"key":"10.1016\/j.ceramint.2021.11.152_bib35","doi-asserted-by":"crossref","first-page":"2000791","DOI":"10.1002\/adem.202000791","article-title":"Defect engineering to achieve wake-up free HfO2-based ferroelectrics","volume":"23","author":"Kashir","year":"2021","journal-title":"Adv. Eng. Mater."},{"key":"10.1016\/j.ceramint.2021.11.152_bib36","doi-asserted-by":"crossref","first-page":"1700461","DOI":"10.1002\/adfm.201700461","article-title":"Flexible inorganic ferroelectric thin films for nonvolatile memory devices","volume":"27","author":"Yu","year":"2017","journal-title":"Adv. Funct. Mater."},{"key":"10.1016\/j.ceramint.2021.11.152_bib37","doi-asserted-by":"crossref","first-page":"1757","DOI":"10.1111\/j.1151-2916.1989.tb06322.x","article-title":"Crystal structure of orthorhombic zirconia in partially stabilized zirconia","volume":"72","author":"Kisi","year":"1989","journal-title":"J. Am. Ceram. Soc."},{"key":"10.1016\/j.ceramint.2021.11.152_bib38","doi-asserted-by":"crossref","first-page":"262904","DOI":"10.1063\/1.4954942","article-title":"Impact of mechanical stress on ferroelectricity in (Hf0.5Zr0.5)O2 thin films","volume":"108","author":"Shiraishi","year":"2016","journal-title":"Appl. Phys. Lett."},{"key":"10.1016\/j.ceramint.2021.11.152_bib39","doi-asserted-by":"crossref","first-page":"46350","DOI":"10.1038\/srep46350","article-title":"Enhanced resistive switching characteristics in Pt\/BaTiO3\/ITO structures through insertion of HfO2:Al2O3 (HAO) dielectric thin layer","volume":"7","author":"Silva","year":"2017","journal-title":"Sci. Rep."},{"key":"10.1016\/j.ceramint.2021.11.152_bib40","doi-asserted-by":"crossref","first-page":"242901","DOI":"10.1063\/5.0029516","article-title":"Ultra-thin Hf0.5Zr0.5O2 thin-film-based ferroelectric tunnel junction via stress induced crystallization","volume":"117","author":"Lyu","year":"2020","journal-title":"Appl. Phys. Lett."},{"key":"10.1016\/j.ceramint.2021.11.152_bib41","doi-asserted-by":"crossref","first-page":"132902","DOI":"10.1063\/1.4932115","article-title":"Microscopically crumpled indium-tin-oxide thin films as compliant electrodes with tunable transmittance","volume":"107","author":"Ong","year":"2015","journal-title":"Appl. Phys. Lett."},{"key":"10.1016\/j.ceramint.2021.11.152_bib42","doi-asserted-by":"crossref","first-page":"246","DOI":"10.1007\/s11837-018-3140-5","article-title":"Ferroelectric Hf0.5Zr0.5O2 thin films: a review of recent advances","volume":"71","author":"Kim","year":"2019","journal-title":"JOM"},{"key":"10.1016\/j.ceramint.2021.11.152_bib43","doi-asserted-by":"crossref","first-page":"3669","DOI":"10.1039\/C9TC04801D","article-title":"Low-temperature crystallization and paraelectric\u2013ferroelectric phase transformation in nanoscale ZrO2 thin films induced by atomic layer plasma treatment","volume":"8","author":"Yi","year":"2020","journal-title":"J. Mater. Chem. C"},{"key":"10.1016\/j.ceramint.2021.11.152_bib44","doi-asserted-by":"crossref","first-page":"281","DOI":"10.1039\/C8TC04447C","article-title":"Enhanced energy-storage performance with excellent stability under low electric fields in BNT\u2013ST relaxor ferroelectric ceramics","volume":"7","author":"Ma","year":"2019","journal-title":"J. Mater. Chem. C"},{"key":"10.1016\/j.ceramint.2021.11.152_bib45","doi-asserted-by":"crossref","first-page":"1700461","DOI":"10.1002\/adfm.201700461","article-title":"Flexible inorganic ferroelectric thin films for nonvolatile memory devices","volume":"27","author":"Yu","year":"2017","journal-title":"Adv. Funct. Mater."},{"key":"10.1016\/j.ceramint.2021.11.152_bib46","doi-asserted-by":"crossref","DOI":"10.1063\/1.3457228","article-title":"Analysis of ferroelectric polarization switching in (NH4)0.39K0.61NO3 films using nucleation limited switching model","volume":"108","author":"Dabra","year":"2010","journal-title":"J. Appl. Phys."},{"key":"10.1016\/j.ceramint.2021.11.152_bib47","doi-asserted-by":"crossref","first-page":"262903","DOI":"10.1063\/1.5010207","article-title":"Nucleation limited switching (NLS) model for HfO2-based metal-ferroelectric-metal (MFM) capacitors: switching kinetics and retention characteristics","volume":"112","author":"Gong","year":"2018","journal-title":"Appl. Phys. Lett."},{"key":"10.1016\/j.ceramint.2021.11.152_bib48","doi-asserted-by":"crossref","first-page":"214109","DOI":"10.1103\/PhysRevB.66.214109","article-title":"Non-Kolmogorov-Avrami switching kinetics in ferroelectric thin films","volume":"66","author":"Tagantsev","year":"2002","journal-title":"Phys. Rev. B"},{"key":"10.1016\/j.ceramint.2021.11.152_bib49","doi-asserted-by":"crossref","DOI":"10.1063\/1.5044623","article-title":"Ferroelectric switching dynamics in 0.5Ba(Zr0.2Ti0.8)O3-0.5(Ba0.7Ca0.3)TiO3 thin films","volume":"113","author":"Silva","year":"2018","journal-title":"Appl. Phys. Lett."},{"key":"10.1016\/j.ceramint.2021.11.152_bib50","article-title":"Ferroelectric thin films: review of materials, properties, and applications","volume":"100","author":"Setter","year":"2006","journal-title":"J. Appl. Phys."},{"key":"10.1016\/j.ceramint.2021.11.152_bib51","doi-asserted-by":"crossref","first-page":"222901","DOI":"10.1063\/1.5030562","article-title":"Nanoscopic studies of domain structure dynamics in ferroelectric La:HfO2 capacitors","volume":"112","author":"Buragohain","year":"2018","journal-title":"Appl. Phys. Lett."},{"key":"10.1016\/j.ceramint.2021.11.152_bib52","doi-asserted-by":"crossref","first-page":"38929","DOI":"10.1021\/acsami.9b12878","article-title":"Stable subloop behavior in ferroelectric Si-doped HfO2","volume":"11","author":"Lee","year":"2019","journal-title":"ACS Appl. Mater. Interfaces"},{"key":"10.1016\/j.ceramint.2021.11.152_bib53","doi-asserted-by":"crossref","DOI":"10.1063\/5.0047977","article-title":"Domains and domain dynamics in fluorite-structured ferroelectrics","volume":"8","author":"Lee","year":"2021","journal-title":"Appl. Phys. Rev."},{"key":"10.1016\/j.ceramint.2021.11.152_bib54","doi-asserted-by":"crossref","first-page":"6290","DOI":"10.1038\/s41598-021-85773-7","article-title":"Enhanced ferroelectric switching speed of Si-doped HfO2 thin film tailored by oxygen deficiency","volume":"11","author":"Lee","year":"2021","journal-title":"Sci. Rep."}],"container-title":["Ceramics International"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/api.elsevier.com\/content\/article\/PII:S0272884221035707?httpAccept=text\/xml","content-type":"text\/xml","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/api.elsevier.com\/content\/article\/PII:S0272884221035707?httpAccept=text\/plain","content-type":"text\/plain","content-version":"vor","intended-application":"text-mining"}],"deposited":{"date-parts":[[2025,10,3]],"date-time":"2025-10-03T08:35:52Z","timestamp":1759480552000},"score":1,"resource":{"primary":{"URL":"https:\/\/linkinghub.elsevier.com\/retrieve\/pii\/S0272884221035707"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2022,3]]},"references-count":54,"journal-issue":{"issue":"5","published-print":{"date-parts":[[2022,3]]}},"alternative-id":["S0272884221035707"],"URL":"https:\/\/doi.org\/10.1016\/j.ceramint.2021.11.152","relation":{},"ISSN":["0272-8842"],"issn-type":[{"type":"print","value":"0272-8842"}],"subject":[],"published":{"date-parts":[[2022,3]]},"assertion":[{"value":"Elsevier","name":"publisher","label":"This article is maintained by"},{"value":"Ferroelectric properties of ZrO2 films deposited on ITO-coated glass","name":"articletitle","label":"Article Title"},{"value":"Ceramics International","name":"journaltitle","label":"Journal Title"},{"value":"https:\/\/doi.org\/10.1016\/j.ceramint.2021.11.152","name":"articlelink","label":"CrossRef DOI link to publisher maintained version"},{"value":"article","name":"content_type","label":"Content Type"},{"value":"\u00a9 2021 Elsevier Ltd and Techna Group S.r.l. All rights reserved.","name":"copyright","label":"Copyright"}]}}