{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,10,14]],"date-time":"2025-10-14T11:09:43Z","timestamp":1760440183752},"reference-count":23,"publisher":"Elsevier BV","issue":"3","license":[{"start":{"date-parts":[[2003,3,1]],"date-time":"2003-03-01T00:00:00Z","timestamp":1046476800000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/www.elsevier.com\/tdm\/userlicense\/1.0\/"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Solid-State Electronics"],"published-print":{"date-parts":[[2003,3]]},"DOI":"10.1016\/s0038-1101(02)00413-6","type":"journal-article","created":{"date-parts":[[2003,1,17]],"date-time":"2003-01-17T14:53:32Z","timestamp":1042815212000},"page":"559-563","source":"Crossref","is-referenced-by-count":16,"title":["Characterisation of GaN films grown on sapphire by low-temperature cyclic pulsed laser deposition\/nitrogen rf plasma"],"prefix":"10.1016","volume":"47","author":[{"given":"P.","family":"Sanguino","sequence":"first","affiliation":[]},{"given":"M.","family":"Niehus","sequence":"additional","affiliation":[]},{"given":"L.V.","family":"Melo","sequence":"additional","affiliation":[]},{"given":"R.","family":"Schwarz","sequence":"additional","affiliation":[]},{"given":"S.","family":"Koynov","sequence":"additional","affiliation":[]},{"given":"T.","family":"Monteiro","sequence":"additional","affiliation":[]},{"given":"J.","family":"Soares","sequence":"additional","affiliation":[]},{"given":"H.","family":"Alves","sequence":"additional","affiliation":[]},{"given":"B.K.","family":"Meyer","sequence":"additional","affiliation":[]}],"member":"78","reference":[{"issue":"13","key":"10.1016\/S0038-1101(02)00413-6_BIB1","doi-asserted-by":"crossref","first-page":"1868","DOI":"10.1063\/1.114359","article-title":"High-power InGaN single-quantum-well-structure blue and violet light-emitting diodes","volume":"67","author":"Nakamura","year":"1995","journal-title":"Appl. Phys. Lett."},{"issue":"15","key":"10.1016\/S0038-1101(02)00413-6_BIB2","doi-asserted-by":"crossref","first-page":"2105","DOI":"10.1063\/1.115599","article-title":"InGaN multi-quantum-well structure laser diodes grown on MgAl2O4","volume":"68","author":"Nakamura","year":"1996","journal-title":"Appl. Phys. Lett."},{"issue":"16","key":"10.1016\/S0038-1101(02)00413-6_BIB3","doi-asserted-by":"crossref","first-page":"2503","DOI":"10.1063\/1.1318396","article-title":"Observation of long photoluminescence decay times for high-quality GaN grown by metalorganic chemical vapor deposition","volume":"77","author":"Kwon","year":"2000","journal-title":"Appl. Phys. Lett."},{"issue":"12","key":"10.1016\/S0038-1101(02)00413-6_BIB4","doi-asserted-by":"crossref","first-page":"1846","DOI":"10.1063\/1.1311607","article-title":"Growth of hexagonal GaN on Si(111) coated with a thin flat SiC buffer layer","volume":"77","author":"Wang","year":"2000","journal-title":"Appl. Phys. Lett."},{"issue":"22","key":"10.1016\/S0038-1101(02)00413-6_BIB5","doi-asserted-by":"crossref","first-page":"3224","DOI":"10.1063\/1.120297","article-title":"Evidence of compensating centers as origin of yellow luminescence in GaN","volume":"71","author":"Schubert","year":"1997","journal-title":"Appl. Phys. Lett."},{"issue":"18","key":"10.1016\/S0038-1101(02)00413-6_BIB6","doi-asserted-by":"crossref","first-page":"3349","DOI":"10.1063\/1.1476400","article-title":"Photoluminescence and photoluminescence excitation studies of as grown and P-implanted GaN: On the nature of yellow luminescence","volume":"80","author":"Huang","year":"2002","journal-title":"Appl. Phys. Lett."},{"issue":"1","key":"10.1016\/S0038-1101(02)00413-6_BIB7","doi-asserted-by":"crossref","first-page":"188","DOI":"10.1063\/1.373641","article-title":"Kinetic, crystallographic, and optical studies of GaN and AlxGa1\u2212xN thin films grown on Si(111) by pulsed reactive crossed-beam laser ablation using liquid alloys and N2 or NH3","volume":"88","author":"Willmott","year":"2000","journal-title":"J. Appl. Phys."},{"issue":"10","key":"10.1016\/S0038-1101(02)00413-6_BIB8","doi-asserted-by":"crossref","first-page":"5776","DOI":"10.1063\/1.368868","article-title":"Epitaxial growth of GaN thin film on sapphire with a thin ZnO buffer layer by liquid target pulsed laser deposition","volume":"84","author":"Sun","year":"1998","journal-title":"J. Appl. Phys."},{"issue":"23","key":"10.1016\/S0038-1101(02)00413-6_BIB9","doi-asserted-by":"crossref","first-page":"3385","DOI":"10.1063\/1.120343","article-title":"Impurity contamination of GaN epitaxial films from the sapphire, SiC and ZnO substrates","volume":"71","author":"Popovici","year":"1997","journal-title":"Appl. Phys. Lett."},{"key":"10.1016\/S0038-1101(02)00413-6_BIB10","doi-asserted-by":"crossref","unstructured":"Sanguino P, Koynov S, Niehus M, Melo L, Schwarz R, Alves H, et al. Layer by layer growth of GaN films by low temperature cyclic process. Mat Res Soc Symp Proc, 2001;693, in press","DOI":"10.1557\/PROC-693-I3.14.1"},{"key":"10.1016\/S0038-1101(02)00413-6_BIB11","doi-asserted-by":"crossref","unstructured":"Sanguino P, Niehus M, Koynov S, Schwarz R, Alves H, Meyer BK. Layer by layer growth of GaN on sapphire by low temperature cyclic pulsed laser deposition\/nitrogen r.f. plasma. Mat Res Soc Symp Proc 2002;722:181\u20136","DOI":"10.1557\/PROC-722-K7.6"},{"issue":"23","key":"10.1016\/S0038-1101(02)00413-6_BIB12","doi-asserted-by":"crossref","first-page":"702","DOI":"10.1103\/PhysRevB.52.16702","article-title":"Properties of the yellow luminescence in undoped GaN epitaxial layers","volume":"52","author":"Hofmann","year":"1995","journal-title":"Phys. Rev. B"},{"issue":"10","key":"10.1016\/S0038-1101(02)00413-6_BIB13","doi-asserted-by":"crossref","first-page":"1394","DOI":"10.1063\/1.121955","article-title":"Growth of GaN(0001) thin films on Si(001) by pulsed reactive crossed-beam laser ablation using liquid Ga and N2","volume":"73","author":"Willmott","year":"1998","journal-title":"Appl. Phys. Lett."},{"issue":"23","key":"10.1016\/S0038-1101(02)00413-6_BIB14","doi-asserted-by":"crossref","first-page":"3390","DOI":"10.1063\/1.122776","article-title":"Photoluminescence of localized excitons in pulsed-laser deposited GaN","volume":"73","author":"Cazzanelli","year":"1998","journal-title":"Appl. Phys. Lett."},{"key":"10.1016\/S0038-1101(02)00413-6_BIB15","doi-asserted-by":"crossref","first-page":"2395","DOI":"10.1143\/JJAP.19.2395","volume":"19","author":"Ogino","year":"1980","journal-title":"Jpn. J. Appl. Phys."},{"issue":"4","key":"10.1016\/S0038-1101(02)00413-6_BIB16","doi-asserted-by":"crossref","first-page":"503","DOI":"10.1063\/1.117767","article-title":"Gallium vacancies and the yellow luminescence in GaN","volume":"69","author":"Neugebauer","year":"1996","journal-title":"Appl. Phys. Lett."},{"issue":"15","key":"10.1016\/S0038-1101(02)00413-6_BIB17","doi-asserted-by":"crossref","first-page":"9571","DOI":"10.1103\/PhysRevB.55.9571","article-title":"Point-defect complexes and broadband luminescence in GaN and AlN","volume":"95","author":"Mattila","year":"1997","journal-title":"Phys. Rev. B"},{"issue":"16","key":"10.1016\/S0038-1101(02)00413-6_BIB18","doi-asserted-by":"crossref","first-page":"3030","DOI":"10.1103\/PhysRevLett.79.3030","article-title":"Observation of native Ga vacancies in GaN by positron annihilation","volume":"79","author":"Saarinen","year":"1997","journal-title":"Phys. Rev. Lett."},{"key":"10.1016\/S0038-1101(02)00413-6_BIB19","doi-asserted-by":"crossref","first-page":"045205.1","DOI":"10.1103\/PhysRevB.63.045205","article-title":"Influence of dopants and substrate material on the formation of Ga vacancies in epitaxial GaN layers","volume":"63","author":"Oila","year":"2001","journal-title":"Phys. Rev. B"},{"issue":"19","key":"10.1016\/S0038-1101(02)00413-6_BIB20","doi-asserted-by":"crossref","first-page":"2858","DOI":"10.1063\/1.1371539","article-title":"Growth of high quality GaN on Si(111) substrate by ultrahigh vacuum chemical vapor deposition","volume":"78","author":"Kim","year":"2001","journal-title":"Appl. Phys. Lett."},{"issue":"10","key":"10.1016\/S0038-1101(02)00413-6_BIB21","doi-asserted-by":"crossref","first-page":"1459","DOI":"10.1063\/1.1400770","article-title":"Growth of crack-free hexagonal GaN films on Si(100)","volume":"79","author":"Wan","year":"2001","journal-title":"Appl. Phys. Lett."},{"issue":"4","key":"10.1016\/S0038-1101(02)00413-6_BIB22","doi-asserted-by":"crossref","first-page":"2499","DOI":"10.1063\/1.1435834","article-title":"Role of sapphire nitridation temperature on GaN growth by plasma assisted molecular beam epitaxy: Part I. Impact of the nitridation chemistry on material characteristics","volume":"91","author":"Namkoong","year":"2002","journal-title":"J. Appl. Phys."},{"issue":"19","key":"10.1016\/S0038-1101(02)00413-6_BIB23","doi-asserted-by":"crossref","first-page":"12571","DOI":"10.1103\/PhysRevB.58.12571","article-title":"Deep acceptors trapped at threading-edge dislocations in GaN","volume":"58","author":"Elsner","year":"1998","journal-title":"Phys. Rev. B"}],"container-title":["Solid-State Electronics"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/api.elsevier.com\/content\/article\/PII:S0038110102004136?httpAccept=text\/xml","content-type":"text\/xml","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/api.elsevier.com\/content\/article\/PII:S0038110102004136?httpAccept=text\/plain","content-type":"text\/plain","content-version":"vor","intended-application":"text-mining"}],"deposited":{"date-parts":[[2019,3,30]],"date-time":"2019-03-30T09:53:40Z","timestamp":1553939620000},"score":1,"resource":{"primary":{"URL":"https:\/\/linkinghub.elsevier.com\/retrieve\/pii\/S0038110102004136"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2003,3]]},"references-count":23,"journal-issue":{"issue":"3","published-print":{"date-parts":[[2003,3]]}},"alternative-id":["S0038110102004136"],"URL":"https:\/\/doi.org\/10.1016\/s0038-1101(02)00413-6","relation":{},"ISSN":["0038-1101"],"issn-type":[{"value":"0038-1101","type":"print"}],"subject":[],"published":{"date-parts":[[2003,3]]}}}