{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,9,30]],"date-time":"2025-09-30T00:13:33Z","timestamp":1759191213961,"version":"3.44.0"},"reference-count":9,"publisher":"Elsevier BV","license":[{"start":{"date-parts":[[1998,3,1]],"date-time":"1998-03-01T00:00:00Z","timestamp":888710400000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/www.elsevier.com\/tdm\/userlicense\/1.0\/"},{"start":{"date-parts":[[1998,3,1]],"date-time":"1998-03-01T00:00:00Z","timestamp":888710400000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/www.elsevier.com\/legal\/tdmrep-license"}],"content-domain":{"domain":["elsevier.com","sciencedirect.com"],"crossmark-restriction":true},"short-container-title":["Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms"],"published-print":{"date-parts":[[1998,3]]},"DOI":"10.1016\/s0168-583x(97)00684-8","type":"journal-article","created":{"date-parts":[[2002,7,25]],"date-time":"2002-07-25T11:27:35Z","timestamp":1027596455000},"page":"220-224","update-policy":"https:\/\/doi.org\/10.1016\/elsevier_cm_policy","source":"Crossref","is-referenced-by-count":5,"special_numbering":"C","title":["Ion beam studies of CdTe films epitaxially grown on Si, GaAs and sapphire substrates"],"prefix":"10.1016","volume":"136-138","author":[{"given":"E.","family":"Alves","sequence":"first","affiliation":[]},{"given":"M.F.","family":"da Silva","sequence":"additional","affiliation":[]},{"given":"J.C.","family":"Soares","sequence":"additional","affiliation":[]},{"given":"N.V.","family":"Sochinskii","sequence":"additional","affiliation":[]},{"given":"S.","family":"Bernardi","sequence":"additional","affiliation":[]}],"member":"78","reference":[{"key":"10.1016\/S0168-583X(97)00684-8_BIB1","doi-asserted-by":"crossref","first-page":"195","DOI":"10.1016\/0022-0248(95)00635-4","volume":"161","author":"Sochinskii","year":"1996","journal-title":"J. Crystal Growth"},{"key":"10.1016\/S0168-583X(97)00684-8_BIB2","doi-asserted-by":"crossref","first-page":"860","DOI":"10.1063\/1.95865","volume":"46","author":"Otsuka","year":"1985","journal-title":"Appl. Phys. Lett."},{"key":"10.1016\/S0168-583X(97)00684-8_BIB3","doi-asserted-by":"crossref","first-page":"1519","DOI":"10.1063\/1.97320","volume":"49","author":"Cohen-Solal","year":"1986","journal-title":"Appl. Phys. Lett."},{"key":"10.1016\/S0168-583X(97)00684-8_BIB4","doi-asserted-by":"crossref","first-page":"2428","DOI":"10.1063\/1.345512","volume":"47","author":"Ligeon","year":"1990","journal-title":"J. Appl. Phys."},{"key":"10.1016\/S0168-583X(97)00684-8_BIB5","doi-asserted-by":"crossref","first-page":"1879","DOI":"10.1063\/1.102159","volume":"55","author":"Sporken","year":"1989","journal-title":"Appl. Phys. Lett."},{"key":"10.1016\/S0168-583X(97)00684-8_BIB6","doi-asserted-by":"crossref","first-page":"237","DOI":"10.1063\/1.94683","volume":"44","author":"Mar","year":"1984","journal-title":"Appl. Phys. Lett."},{"key":"10.1016\/S0168-583X(97)00684-8_BIB7","doi-asserted-by":"crossref","first-page":"1314","DOI":"10.1063\/1.118522","volume":"70","author":"Sochinskii","year":"1997","journal-title":"Appl. Phys. Lett."},{"key":"10.1016\/S0168-583X(97)00684-8_BIB8","doi-asserted-by":"crossref","first-page":"248","DOI":"10.1088\/0268-1242\/11\/2\/018","volume":"11","author":"Sochinskii","year":"1996","journal-title":"Semicond. Sci. Technol."},{"year":"1988","series-title":"High Energy Beam Analysis of Solids","key":"10.1016\/S0168-583X(97)00684-8_BIB9"}],"container-title":["Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/api.elsevier.com\/content\/article\/PII:S0168583X97006848?httpAccept=text\/xml","content-type":"text\/xml","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/api.elsevier.com\/content\/article\/PII:S0168583X97006848?httpAccept=text\/plain","content-type":"text\/plain","content-version":"vor","intended-application":"text-mining"}],"deposited":{"date-parts":[[2025,9,29]],"date-time":"2025-09-29T17:04:08Z","timestamp":1759165448000},"score":1,"resource":{"primary":{"URL":"https:\/\/linkinghub.elsevier.com\/retrieve\/pii\/S0168583X97006848"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[1998,3]]},"references-count":9,"alternative-id":["S0168583X97006848"],"URL":"https:\/\/doi.org\/10.1016\/s0168-583x(97)00684-8","relation":{},"ISSN":["0168-583X"],"issn-type":[{"type":"print","value":"0168-583X"}],"subject":[],"published":{"date-parts":[[1998,3]]},"assertion":[{"value":"Elsevier","name":"publisher","label":"This article is maintained by"},{"value":"Ion beam studies of CdTe films epitaxially grown on Si, GaAs and sapphire substrates","name":"articletitle","label":"Article Title"},{"value":"Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms","name":"journaltitle","label":"Journal Title"},{"value":"https:\/\/doi.org\/10.1016\/S0168-583X(97)00684-8","name":"articlelink","label":"CrossRef DOI link to publisher maintained version"},{"value":"converted-article","name":"content_type","label":"Content Type"},{"value":"Copyright \u00a9 1998 Published by Elsevier B.V.","name":"copyright","label":"Copyright"}]}}