{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,9,29]],"date-time":"2025-09-29T20:38:35Z","timestamp":1759178315067},"reference-count":6,"publisher":"Elsevier BV","license":[{"start":{"date-parts":[[2002,4,1]],"date-time":"2002-04-01T00:00:00Z","timestamp":1017619200000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/www.elsevier.com\/tdm\/userlicense\/1.0\/"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Materials Science and Engineering: B"],"published-print":{"date-parts":[[2002,4]]},"DOI":"10.1016\/s0921-5107(01)01001-7","type":"journal-article","created":{"date-parts":[[2002,10,14]],"date-time":"2002-10-14T20:48:57Z","timestamp":1034628537000},"page":"453-456","source":"Crossref","is-referenced-by-count":6,"special_numbering":"C","title":["Application of high-resolution X-ray diffraction to study strain status in Si1\u2212Ge \/Si1\u2212Ge \/Si (001) heterostructures"],"prefix":"10.1016","volume":"91-92","author":[{"given":"K.D.","family":"Chtcherbatchev","sequence":"first","affiliation":[]},{"given":"A.D.","family":"Sequeira","sequence":"additional","affiliation":[]},{"given":"N.","family":"Franco","sequence":"additional","affiliation":[]},{"given":"N.P.","family":"Barradas","sequence":"additional","affiliation":[]},{"given":"M.","family":"Myronov","sequence":"additional","affiliation":[]},{"given":"O.A.","family":"Mironov","sequence":"additional","affiliation":[]},{"given":"E.H.C.","family":"Parker","sequence":"additional","affiliation":[]}],"member":"78","reference":[{"key":"10.1016\/S0921-5107(01)01001-7_BIB1","doi-asserted-by":"crossref","first-page":"1595","DOI":"10.1016\/0038-1101(95)00064-Z","volume":"38","author":"K\u00f6nig","year":"1995","journal-title":"Solid-State Electron."},{"key":"10.1016\/S0921-5107(01)01001-7_BIB2","doi-asserted-by":"crossref","first-page":"1497","DOI":"10.1016\/S0038-1101(99)00095-7","volume":"43","author":"Parker","year":"1999","journal-title":"Solid-State Electron."},{"key":"10.1016\/S0921-5107(01)01001-7_BIB3","doi-asserted-by":"crossref","first-page":"206","DOI":"10.4028\/www.scientific.net\/MSF.378-381.206","volume":"378\u2013381","author":"Sequeira","year":"2001","journal-title":"Mater. Sci. Forum"},{"issue":"6","key":"10.1016\/S0921-5107(01)01001-7_BIB4","doi-asserted-by":"crossref","first-page":"2881","DOI":"10.1063\/1.366281","volume":"82","author":"Li","year":"1997","journal-title":"J. Appl. Phys."},{"key":"10.1016\/S0921-5107(01)01001-7_BIB5","doi-asserted-by":"crossref","first-page":"61","DOI":"10.1016\/0022-0248(95)00372-X","volume":"157","author":"Bauer","year":"1995","journal-title":"J. Crystal Growth"},{"key":"10.1016\/S0921-5107(01)01001-7_BIB6","doi-asserted-by":"crossref","first-page":"5341","DOI":"10.1063\/1.1661935","volume":"44","author":"Brantley","year":"1973","journal-title":"J. Appl. Phys."}],"container-title":["Materials Science and Engineering: B"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/api.elsevier.com\/content\/article\/PII:S0921510701010017?httpAccept=text\/xml","content-type":"text\/xml","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/api.elsevier.com\/content\/article\/PII:S0921510701010017?httpAccept=text\/plain","content-type":"text\/plain","content-version":"vor","intended-application":"text-mining"}],"deposited":{"date-parts":[[2020,3,12]],"date-time":"2020-03-12T14:49:54Z","timestamp":1584024594000},"score":1,"resource":{"primary":{"URL":"https:\/\/linkinghub.elsevier.com\/retrieve\/pii\/S0921510701010017"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2002,4]]},"references-count":6,"alternative-id":["S0921510701010017"],"URL":"https:\/\/doi.org\/10.1016\/s0921-5107(01)01001-7","relation":{},"ISSN":["0921-5107"],"issn-type":[{"value":"0921-5107","type":"print"}],"subject":[],"published":{"date-parts":[[2002,4]]}}}