{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,12,3]],"date-time":"2025-12-03T17:27:56Z","timestamp":1764782876350},"reference-count":24,"publisher":"Oxford University Press (OUP)","issue":"1","license":[{"start":{"date-parts":[[2005,1,28]],"date-time":"2005-01-28T00:00:00Z","timestamp":1106870400000},"content-version":"unspecified","delay-in-days":0,"URL":"https:\/\/www.cambridge.org\/core\/terms"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Microsc Microanal"],"published-print":{"date-parts":[[2005,2]]},"abstract":"<jats:p>Off-axis electron holography is used to measure electrostatic potential profiles across a silicon<jats:italic>p<\/jats:italic>-<jats:italic>n<\/jats:italic>junction, which has been prepared for examination in the transmission electron microscope (TEM) in two different specimen geometries using focused ion beam (FIB) milling. Results are obtained both from a conventional unbiased FIB-milled sample and using a novel sample geometry that allows a reverse bias to be applied to an FIB-milled sample<jats:italic>in situ<\/jats:italic>in the TEM. Computer simulations are fitted to the results to assess the effect of TEM specimen preparation on the charge density and the electrostatic potential in the thin sample.<\/jats:p>","DOI":"10.1017\/s1431927605050087","type":"journal-article","created":{"date-parts":[[2005,1,31]],"date-time":"2005-01-31T22:54:00Z","timestamp":1107212040000},"page":"66-78","source":"Crossref","is-referenced-by-count":33,"title":["Off-Axis Electron Holography of Unbiased and Reverse-Biased Focused Ion Beam Milled Si<i>p-n<\/i>Junctions"],"prefix":"10.1093","volume":"11","author":[{"given":"Alison C.","family":"Twitchett","sequence":"first","affiliation":[]},{"given":"Rafal E.","family":"Dunin-Borkowski","sequence":"additional","affiliation":[]},{"given":"Robert J.","family":"Hallifax","sequence":"additional","affiliation":[]},{"given":"Ronald F.","family":"Broom","sequence":"additional","affiliation":[]},{"given":"Paul A.","family":"Midgley","sequence":"additional","affiliation":[]}],"member":"286","published-online":{"date-parts":[[2005,1,28]]},"reference":[{"key":"S1431927605050087_ref015","doi-asserted-by":"crossref","unstructured":"Rau, W.D. , Schwander, P. , Baumann, F.H. , Hoppner, W. , & Ourmazd, A. (1999).Two-dimensional mapping of the electrostatic potential intransistors by electron holography.Phys Rev Lett 82,2614\u20132617.","DOI":"10.1103\/PhysRevLett.82.2614"},{"key":"S1431927605050087_ref017","unstructured":"Somodi, P.K. , Dunin-Borkowski, R.E. , Twitchett, A.C. , Barnes, C.H.W. , & Midgley, P.A. (2003).Simulations of the electrostatic potential distribution in a TEMsample of a semiconductor device.Inst Phys Conf Ser 180,501\u2013504."},{"key":"S1431927605050087_ref023","doi-asserted-by":"crossref","unstructured":"Wang, Z. , Kato, T. , Shibata, N. , Hirayama, T. , Kato, N. , Sasaki, K. , & Saka, H. (2002b).Characterizing an implanted Si\/Si p-n junction with lowerdoping level by combined electron holography and focused-ion-beammilling.Appl Phys Lett 81,478\u2013480.","DOI":"10.1063\/1.1491606"},{"key":"S1431927605050087_ref010","doi-asserted-by":"crossref","unstructured":"McCartney, M.R. & Gajdardziska-Josifovska, M. 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(2003).Electron beam illumination effects on electrostatic potentialmapping in holographic imaging of semiconductors in transmissionelectron microscopy.Inst Phys Conf Ser 180,49\u201352."},{"key":"S1431927605050087_ref002","doi-asserted-by":"crossref","unstructured":"Beleggia, M. , Fazzini, P.F. , Merli, P.G. , & Pozzi, G. (2003).Influence of charged oxide layers on TEM imaging of reverse-biasedp-n junctions.Phys Rev B 67,045328.","DOI":"10.1103\/PhysRevB.67.045328"},{"key":"S1431927605050087_ref006","unstructured":"Dunin-Borkowski, R.E. , McCartney, M.R. , & Smith, D.J. (2004).Electron holography of nanostructured materials. InEncyclopaedia of Nanoscience and Nanotechnology, Nalwa, H.S. (Ed.),Vol. 3, pp.41\u2013100.Stevenson Ranch, California:American Scientific Publishers."},{"key":"S1431927605050087_ref004","doi-asserted-by":"crossref","unstructured":"de Ruijter, W.J. & Weiss, J.K. 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(2002a).Electron holographic characterization of electrostatic potentialdistributions in a transistor sample fabricated by focused ionbeam.Appl Phys Lett 80,246\u2013248.","DOI":"10.1063\/1.1432746"}],"container-title":["Microscopy and Microanalysis"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.cambridge.org\/core\/services\/aop-cambridge-core\/content\/view\/S1431927605050087","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2023,2,14]],"date-time":"2023-02-14T20:56:49Z","timestamp":1676408209000},"score":1,"resource":{"primary":{"URL":"https:\/\/academic.oup.com\/mam\/article\/11\/1\/66\/6912412"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2005,1,28]]},"references-count":24,"journal-issue":{"issue":"1","published-print":{"date-parts":[[2005,2]]}},"alternative-id":["S1431927605050087"],"URL":"https:\/\/doi.org\/10.1017\/s1431927605050087","relation":{},"ISSN":["1431-9276","1435-8115"],"issn-type":[{"value":"1431-9276","type":"print"},{"value":"1435-8115","type":"electronic"}],"subject":[],"published":{"date-parts":[[2005,1,28]]}}}