{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,9,3]],"date-time":"2026-09-03T20:18:11Z","timestamp":1788466691485,"version":"build-2803163510"},"reference-count":50,"publisher":"American Chemical Society (ACS)","issue":"35","license":[{"start":{"date-parts":[[2026,8,24]],"date-time":"2026-08-24T00:00:00Z","timestamp":1787529600000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2026,8,24]],"date-time":"2026-08-24T00:00:00Z","timestamp":1787529600000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"},{"start":{"date-parts":[[2026,8,24]],"date-time":"2026-08-24T00:00:00Z","timestamp":1787529600000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-045"}],"funder":[{"DOI":"10.13039\/501100003661","name":"Korea Institute for Advancement of Technology","doi-asserted-by":"publisher","award":["RS-2026-25537328"],"award-info":[{"award-number":["RS-2026-25537328"]}],"id":[{"id":"10.13039\/501100003661","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/na","name":"Ministry of Trade, Industry and Resources","doi-asserted-by":"publisher","award":["NA"],"award-info":[{"award-number":["NA"]}],"id":[{"id":"10.13039\/na","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2026,9,3]]},"abstract":"<jats:title>Abstract<\/jats:title>\n                  <jats:p>We investigate a-type threading edge dislocations (TEDs) and (a+c)-type threading mixed dislocations (TMDs) in (0001) gallium nitride grown on (111) silicon, using the short depth-of-field of a scanning transmission electron microscope equipped with an aberration corrector. Almost all are inclined to the growth direction. While TMDs are known to dissociate into two partial dislocations bounding a prismatic stacking fault, we also observe a similar dissociation of TEDs. Both types of dislocation have straight c-axis segments separated by jogs that displace the dislocation core along an a-axis direction. Jogs on TEDs appear abrupt, with a localized displacement of the whole core by a translation in the basal plane. Conversely, jogs on TMDs are distributed along the dislocation core, giving a variety of structures where individual atom columns are displaced by \u00b1(1\/6)[01\u201310] from one region to the next. Tetrahedral Ga\u2013N bonding, which is preserved in straight TMDs with Drum stacking fault reconstructions, is not maintained in jogs on either type of threading dislocation. We thus expect them to be electro-optically active centers that may have deleterious effects on nitride devices.<\/jats:p>","DOI":"10.1021\/acs.jpclett.6c01804","type":"journal-article","created":{"date-parts":[[2026,8,31]],"date-time":"2026-08-31T21:08:25Z","timestamp":1788210505000},"page":"10226-10234","source":"Crossref","is-referenced-by-count":0,"title":["Inclined Partial\nDislocations in Nitride Semiconductors"],"prefix":"10.1021","volume":"17","author":[{"ORCID":"https:\/\/orcid.org\/0000-0002-3860-602X","authenticated-orcid":true,"given":"Mino","family":"Yang","sequence":"first","affiliation":[{"name":"Korea Basic Science Institute , ,","place":["Seoul, Korea, 02841"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-4178-6989","authenticated-orcid":true,"given":"Moonsang","family":"Lee","sequence":"additional","affiliation":[{"name":"Inha University , , ,","place":["Incheon, Korea, 22212"]},{"name":"Inha University , , ,","place":["Incheon, Korea, 22212"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-9726-8166","authenticated-orcid":true,"given":"Jaekyun","family":"Kim","sequence":"additional","affiliation":[{"name":"Hanyang University , , ,","place":["Ansan, Korea, 15588"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-5745-4404","authenticated-orcid":true,"given":"Hionsuck","family":"Baik","sequence":"additional","affiliation":[{"name":"Korea Basic Science Institute , ,","place":["Seoul, Korea, 02841"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Yangsoo","family":"Kim","sequence":"additional","affiliation":[{"name":"Korea Basic Science Institute , ,","place":["Seoul, Korea, 02841"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-1749-4134","authenticated-orcid":true,"given":"Richard","family":"Beanland","sequence":"additional","affiliation":[{"name":"University of Warwick , , ,","place":["Coventry, U.K., CV4 8UW"]}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"316","published-online":{"date-parts":[[2026,8,24]]},"reference":[{"issue":"1\u20134","key":"2026090315420714400_cit1","doi-asserted-by":"publisher","first-page":"628","DOI":"10.1016\/0022-0248(91)90816-N","article-title":"Growth Mechanism of GaN Grown on\nSapphire with A1N Buffer Layer by MOVPE","volume":"115","author":"Hiramatsu","year":"1991","journal-title":"J.\nCryst. Growth"},{"key":"2026090315420714400_cit2","doi-asserted-by":"publisher","first-page":"1687","DOI":"10.1063\/1.111832","volume":"64","author":"Nakamura","year":"1994","journal-title":"Candela-Class High-Brightness\nInGaN\/AlGaN\nDouble-Heterostructure Blue-Light-Emitting Diodes"},{"issue":"10","key":"2026090315420714400_cit3","doi-asserted-by":"publisher","first-page":"1249","DOI":"10.1063\/1.113252","article-title":"High Dislocation\nDensities in High Efficiency GaN-Based Light-Emitting Diodes","volume":"66","author":"Lester","year":"1995","journal-title":"Appl. Phys. Lett."},{"issue":"9","key":"2026090315420714400_cit4","doi-asserted-by":"publisher","first-page":"4836","DOI":"10.1063\/1.371450","article-title":"Threading Dislocation\nReduction Mechanisms in Low-Temperature-Grown GaAs","volume":"86","author":"Mathis","year":"1999","journal-title":"J. Appl. Phys."},{"issue":"38\u201339","key":"2026090315420714400_cit5","doi-asserted-by":"publisher","first-page":"3941","DOI":"10.1002\/adma.200901095","article-title":"The Spatial\nDistribution of Threading Dislocations in Gallium Nitride Films","volume":"21","author":"Moram","year":"2009","journal-title":"Adv. Mater."},{"issue":"19","key":"2026090315420714400_cit6","doi-asserted-by":"publisher","first-page":"3672","DOI":"10.1103\/PhysRevLett.79.3672","article-title":"Theory\nof Threading Edge and Screw Dislocations in GaN","volume":"79","author":"Elsner","year":"1997","journal-title":"Phys. Rev. Lett."},{"issue":"19","key":"2026090315420714400_cit7","doi-asserted-by":"publisher","first-page":"1","DOI":"10.1103\/PhysRevLett.93.196401","article-title":"Strain\nInduced Deep Electronic States around Threading Dislocations in GaN","volume":"93","author":"Lymperakis","year":"2004","journal-title":"Phys. Rev. Lett."},{"issue":"15","key":"2026090315420714400_cit8","doi-asserted-by":"publisher","first-page":"9748","DOI":"10.1103\/PhysRevB.59.9748","article-title":"Yellow Luminescence\nand Related Deep Levels in Unintentionally Doped GaN Films","volume":"59","author":"Shalish","year":"1999","journal-title":"Phys. Rev. B"},{"issue":"18","key":"2026090315420714400_cit9","doi-asserted-by":"publisher","first-page":"2691","DOI":"10.1063\/1.1369610","article-title":"Edge and\nScrew Dislocations as Nonradiative\nCenters in InGaN\/GaN Quantum Well Luminescence","volume":"78","author":"Cherns","year":"2001","journal-title":"Appl. Phys. Lett."},{"issue":"3","key":"2026090315420714400_cit10","doi-asserted-by":"publisher","first-page":"281","DOI":"10.1063\/1.1381417","article-title":"Optical\nMetastability of Subband Gap (2.2 EV) Yellow Luminescence in GaN","volume":"79","author":"Chang","year":"2001","journal-title":"Appl. Phys. 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Mag."},{"issue":"21","key":"2026090315420714400_cit17","doi-asserted-by":"publisher","first-page":"2680","DOI":"10.1063\/1.121097","article-title":"Direct Observation\nof the Core Structures of Threading Dislocations in GaN","volume":"72","author":"Xin","year":"1998","journal-title":"Appl. Phys. Lett."},{"issue":"2","key":"2026090315420714400_cit18","doi-asserted-by":"publisher","first-page":"1","DOI":"10.1103\/PhysRevLett.111.025502","article-title":"Mg Doping Affects\nDislocation Core Structures in GaN","volume":"111","author":"Rhode","year":"2013","journal-title":"Phys. Rev.\nLett."},{"issue":"28\u201330","key":"2026090315420714400_cit19","doi-asserted-by":"publisher","first-page":"3925","DOI":"10.1080\/14786435.2013.797617","article-title":"The Dissociation\nof the [a + c] Dislocation in GaN","volume":"93","author":"Hirsch","year":"2013","journal-title":"Philos. 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Lett."},{"issue":"3","key":"2026090315420714400_cit23","doi-asserted-by":"publisher","first-page":"580","DOI":"10.1557\/JMR.1996.0071","article-title":"Growth\nDefects in GaN Films on Sapphire: The Probable Origin of Threading\nDislocations","volume":"11","author":"Ning","year":"1996","journal-title":"J. Mater. Res."},{"issue":"1","key":"2026090315420714400_cit24","doi-asserted-by":"publisher","first-page":"45","DOI":"10.1002\/3527607641.ch2","article-title":"Epitaxial\nLateral Overgrowth\nof GaN","volume":"43","author":"Gibart","year":"2003","journal-title":"Nitride Semicond."},{"issue":"10","key":"2026090315420714400_cit25","doi-asserted-by":"publisher","DOI":"10.1063\/1.4942847","article-title":"Dislocation\nCore Structures in (0001) InGaN","volume":"119","author":"Rhode","year":"2016","journal-title":"J. Appl.\nPhys."},{"issue":"4","key":"2026090315420714400_cit26","doi-asserted-by":"publisher","first-page":"592","DOI":"10.1007\/s11664-006-0105-1","article-title":"Flat GaN Epitaxial Layers Grown on\nSi(111) by Metalorganic Vapor Phase Epitaxy Using Step-Graded AlGaN\nIntermediate Layers","volume":"35","author":"Cheng","year":"2006","journal-title":"J. Electron. Mater."},{"issue":"1","key":"2026090315420714400_cit27","doi-asserted-by":"publisher","first-page":"26","DOI":"10.1002\/pssa.200303428","article-title":"GaN-Based Epitaxy on\nSilicon: Stress Measurements","volume":"200","author":"Krost","year":"2003","journal-title":"Phys. Status Solidi\nAppl. Res."},{"issue":"8","key":"2026090315420714400_cit28","doi-asserted-by":"publisher","first-page":"4866","DOI":"10.1021\/acs.nanolett.8b01488","article-title":"Partial Edge Dislocations Comprised of Metallic Ga Bonds in Heteroepitaxial\nGaN","volume":"18","author":"Lee","year":"2018","journal-title":"Nano Lett."},{"issue":"2","key":"2026090315420714400_cit29","doi-asserted-by":"publisher","first-page":"231","DOI":"10.1093\/oxfordjournals.jmicro.a023803","article-title":"Atomic\nResolution Z-Contrast Imaging of Semiconductors","volume":"49","author":"Xin","year":"2000","journal-title":"J. Electron Microsc. (Tokyo)."},{"issue":"11","key":"2026090315420714400_cit30","doi-asserted-by":"publisher","first-page":"1","DOI":"10.1103\/PhysRevB.75.115201","article-title":"Atomistic Modeling of the (A+c) -Mixed\nDislocation Core in Wurtzite GaN","volume":"75","author":"Belabbas","year":"2007","journal-title":"Phys. Rev.\nB - Condens. Matter Mater. Phys."},{"issue":"3","key":"2026090315420714400_cit31","doi-asserted-by":"publisher","first-page":"1","DOI":"10.1103\/PhysRevLett.113.135503","article-title":"Direct\nObservation of Depth-Dependent Atomic Displacements Associated with\nDislocations in Gallium Nitride","volume":"113","author":"Lozano","year":"2014","journal-title":"Phys. Rev.\nLett."},{"key":"2026090315420714400_cit32","doi-asserted-by":"publisher","first-page":"1","DOI":"10.1038\/ncomms8266","article-title":"Imaging Screw Dislocations\nat Atomic Resolution by\nAberration-Corrected Electron Optical Sectioning","volume":"6","author":"Yang","year":"2015","journal-title":"Nat. Commun."},{"issue":"23","key":"2026090315420714400_cit33","doi-asserted-by":"publisher","first-page":"4797","DOI":"10.1063\/1.1632540","article-title":"Plan-View\nImage Contrast of Dislocations in GaN","volume":"83","author":"Follstaedt","year":"2003","journal-title":"Appl.\nPhys. Lett."},{"issue":"33","key":"2026090315420714400_cit34","doi-asserted-by":"publisher","first-page":"4361","DOI":"10.1080\/14786435.2010.505183","article-title":"ADF\nSTEM Imaging of Screw Dislocations Viewed End-On","volume":"90","author":"Cosgriff","year":"2010","journal-title":"Philos. Mag."},{"issue":"1","key":"2026090315420714400_cit35","doi-asserted-by":"publisher","first-page":"7","DOI":"10.1093\/jmicro\/dfi075","article-title":"Depth Sectioning\nof Aligned Crystals with the Aberration-Corrected Scanning Transmission\nElectron Microscope","volume":"55","author":"Borisevich","year":"2006","journal-title":"J. Electron Microsc. (Tokyo)."},{"issue":"19","key":"2026090315420714400_cit36","doi-asserted-by":"publisher","first-page":"14646","DOI":"10.1103\/PhysRevB.48.14646","article-title":"Unconstrained Minimization\nApproach for Electronic Computations That Scales Linearly with System\nSize","volume":"48","author":"Ordejo\u0301n","year":"1993","journal-title":"Phys. Rev. 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Lett."},{"issue":"1","key":"2026090315420714400_cit40","doi-asserted-by":"publisher","DOI":"10.1063\/1.2219747","article-title":"Insights\ninto the Origin of Threading\nDislocations in GaN Al2O3 from Atomic Force Microscopy","volume":"89","author":"Oliver","year":"2006","journal-title":"Appl. Phys. Lett."},{"issue":"24","key":"2026090315420714400_cit41","doi-asserted-by":"publisher","first-page":"1","DOI":"10.1103\/PhysRevB.75.245213","article-title":"Pattern Formation\nand Directional and Spatial Ordering\nof Edge Dislocations in Bulk GaN: Microphotoluminescence Spectra and\nContinuum Elastic Calculations","volume":"75","author":"Gmeinwieser","year":"2007","journal-title":"Phys. Rev. B\n- Condens. Matter Mater. Phys."},{"issue":"2","key":"2026090315420714400_cit42","doi-asserted-by":"publisher","first-page":"1","DOI":"10.1103\/PhysRevLett.94.025504","article-title":"Atomic and Electronic\nStructure of Mixed and Partial Dislocations in GaN","volume":"94","author":"Arslan","year":"2005","journal-title":"Phys. Rev. Lett."},{"issue":"110","key":"2026090315420714400_cit43","doi-asserted-by":"publisher","first-page":"313","DOI":"10.1080\/14786436508221859","article-title":"Intersecting\nFaults on Basal and Prismatic Planes in Aluminium Nitride","volume":"11","author":"Drum","year":"1965","journal-title":"Philos. Mag."},{"key":"2026090315420714400_cit44","volume-title":"Introduction to Dislocations","author":"Hull","year":"1984","edition":"3"},{"issue":"16","key":"2026090315420714400_cit45","doi-asserted-by":"publisher","first-page":"R10477","DOI":"10.1103\/PhysRevB.53.R10477","article-title":"Theory of\nGaN(101\u03050) and (112\u03050) Surfaces","volume":"53","author":"Northrup","year":"1996","journal-title":"Phys. Rev. B"},{"issue":"7","key":"2026090315420714400_cit46","doi-asserted-by":"publisher","first-page":"537","DOI":"10.1016\/j.scriptamat.2013.06.021","article-title":"Rehybridization-Induced\nDefect-Level\nof Open-Core Edge Dislocation in GaN","volume":"69","author":"Yang","year":"2013","journal-title":"Scr. Mater."},{"issue":"18","key":"2026090315420714400_cit47","doi-asserted-by":"publisher","first-page":"2316","DOI":"10.1063\/1.121347","article-title":"Theory\nof the (12_10) Prismatic Stacking Fault in GaN","volume":"72","author":"Northrup","year":"1998","journal-title":"Appl. Phys. Lett."},{"issue":"6","key":"2026090315420714400_cit48","doi-asserted-by":"publisher","first-page":"1","DOI":"10.1063\/1.3638698","article-title":"Optical Properties\nof Wurtzite\/Zinc-Blende Heterostructures in GaN Nanowires","volume":"110","author":"Jacopin","year":"2011","journal-title":"J. Appl. Phys."},{"issue":"1","key":"2026090315420714400_cit49","doi-asserted-by":"publisher","first-page":"103","DOI":"10.1103\/PhysRevLett.77.103","article-title":"Inversion Domain and Stacking Mismatch\nBoundaries in GaN","volume":"77","author":"Northrup","year":"1996","journal-title":"Phys. Rev. Lett."},{"key":"2026090315420714400_cit50","doi-asserted-by":"publisher","first-page":"1272","DOI":"10.1107\/S0021889811038970","article-title":"Journal of Applied\nCrystallography - 2011 - Momma - VESTA 3 for Three-dimensional\nVisualization of Crystal Volumetric and.Pdf","volume":"44","author":"Momma","year":"2011","journal-title":"J. Appl. Crystallogr."}],"container-title":["The Journal of Physical\nChemistry Letters"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/pubs.acs.org\/doi\/pdf\/10.1021\/acs.jpclett.6c01804","content-type":"application\/pdf","content-version":"vor","intended-application":"unspecified"},{"URL":"https:\/\/pubs.acs.org\/jpclcd\/article-pdf\/17\/35\/10226\/67392328\/acs.jpclett.6c01804.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"syndication"},{"URL":"https:\/\/pubs.acs.org\/jpclcd\/article-pdf\/17\/35\/10226\/67392328\/acs.jpclett.6c01804.pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2026,9,3]],"date-time":"2026-09-03T19:42:14Z","timestamp":1788464534000},"score":1,"resource":{"primary":{"URL":"https:\/\/pubs.acs.org\/jpclcd\/article\/17\/35\/10226\/5328186\/Inclined-Partial-Dislocations-in-Nitride"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2026,8,24]]},"references-count":50,"journal-issue":{"issue":"35","published-online":{"date-parts":[[2026,8,24]]},"published-print":{"date-parts":[[2026,9,3]]}},"URL":"https:\/\/doi.org\/10.1021\/acs.jpclett.6c01804","relation":{},"ISSN":["1948-7185"],"issn-type":[{"value":"1948-7185","type":"electronic"}],"subject":[],"published":{"date-parts":[[2026,8,24]]}}}