{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,8,7]],"date-time":"2026-08-07T15:37:59Z","timestamp":1786117079286,"version":"build-2736575974"},"reference-count":34,"publisher":"American Chemical Society (ACS)","issue":"31","license":[{"start":{"date-parts":[[2026,7,27]],"date-time":"2026-07-27T00:00:00Z","timestamp":1785110400000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2026,7,27]],"date-time":"2026-07-27T00:00:00Z","timestamp":1785110400000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"},{"start":{"date-parts":[[2026,7,27]],"date-time":"2026-07-27T00:00:00Z","timestamp":1785110400000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-045"}],"funder":[{"DOI":"10.13039\/501100004610","name":"Science and Technology Support Program of Jiangsu Province","doi-asserted-by":"publisher","award":["BG2024017"],"award-info":[{"award-number":["BG2024017"]}],"id":[{"id":"10.13039\/501100004610","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100012226","name":"Fundamental Research Funds for the Central Universities","doi-asserted-by":"publisher","award":["30925010529"],"award-info":[{"award-number":["30925010529"]}],"id":[{"id":"10.13039\/501100012226","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/na","name":"National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["52473236"],"award-info":[{"award-number":["52473236"]}],"id":[{"id":"10.13039\/na","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/na","name":"National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["62304109"],"award-info":[{"award-number":["62304109"]}],"id":[{"id":"10.13039\/na","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2026,8,6]]},"abstract":"<jats:title>Abstract<\/jats:title>\n                  <jats:p>As transistor dimensions are scaled down to the sub-10 nm regime, two-dimensional (2D) layered materials have attracted extensive attention for suppressing short-channel effects. Nevertheless, the development of p-type 2D transistors lags far behind that of n-type devices, hindering 2D CMOS technology advancement. Herein, the electronic properties of 2D WO2 and the quantum transport characteristics of dual-gate WO2 MOSFETs are systematically investigated using density functional theory combined with the nonequilibrium Green\u2019s function. At 10 nm channel length, the n-type and p-type devices exhibit high on-state current (Ion) of 1615 \u03bcA\/\u03bcm and 1759 \u03bcA\/\u03bcm, respectively, which satisfy the ITRS high-performance requirements with excellent n\/p symmetry. It is also found that the large bandwidth of the isolated valence band impedes ultrasteep subthreshold swing. Moreover, WO2 MOSFETs exhibit small delay time (\u03c4) and low power delay product (PDP), providing a theoretical basis for material selection and device design of high-performance sub-10 nm 2D transistors.<\/jats:p>","DOI":"10.1021\/acs.jpclett.6c01925","type":"journal-article","created":{"date-parts":[[2026,7,27]],"date-time":"2026-07-27T08:23:02Z","timestamp":1785140582000},"page":"8882-8888","source":"Crossref","is-referenced-by-count":0,"title":["Theoretical\nStudy of High-Performance Two-Dimensional\nWO2 MOSFETs with Excellent n\/p Symmetry"],"prefix":"10.1021","volume":"17","author":[{"given":"Tong","family":"Xu","sequence":"first","affiliation":[{"name":"Nanjing University of Science and Technology , , ,","place":["Nanjing, China, 210094"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Weicong","family":"Sun","sequence":"additional","affiliation":[{"name":"Nanjing University of Science and Technology , , ,","place":["Nanjing, China, 210094"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Zuyun","family":"Chen","sequence":"additional","affiliation":[{"name":"Jinling Institute of Technology , , ,","place":["Nanjing, China, 211169"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Huipu","family":"Wang","sequence":"additional","affiliation":[{"name":"Nanjing University of Science and Technology , , ,","place":["Nanjing, China, 210094"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Yuanyuan","family":"Tai","sequence":"additional","affiliation":[{"name":"Nanjing University of Science and Technology , , ,","place":["Nanjing, China, 210094"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Yongzhen","family":"Yu","sequence":"additional","affiliation":[{"name":"Nanjing University of Science and Technology , , ,","place":["Nanjing, China, 210094"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Shuo","family":"Wang","sequence":"additional","affiliation":[{"name":"Nanjing University of Science and Technology , , ,","place":["Nanjing, China, 210094"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Hengze","family":"Qu","sequence":"additional","affiliation":[{"name":"Nanjing University of Posts and Telecommunications , , ,","place":["Nanjing, China, 210023"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Xuemin","family":"Hu","sequence":"additional","affiliation":[{"name":"Jinling Institute of Technology , , ,","place":["Nanjing, China, 211169"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-8160-6394","authenticated-orcid":true,"given":"Wenhan","family":"Zhou","sequence":"additional","affiliation":[{"name":"Nanjing University of Science and Technology , , ,","place":["Nanjing, China, 210094"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-4981-231X","authenticated-orcid":true,"given":"Shengli","family":"Zhang","sequence":"additional","affiliation":[{"name":"Nanjing University of Science and Technology , , ,","place":["Nanjing, China, 210094"]}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"316","published-online":{"date-parts":[[2026,7,27]]},"reference":[{"key":"2026080609093582200_cit1","doi-asserted-by":"publisher","first-page":"139","DOI":"10.1038\/s44287-023-00016-3","article-title":"The CMOS 2.0 Revolution","volume":"1","author":"Ryckaert","year":"2024","journal-title":"Nat.\nRev. Electr. Eng."},{"key":"2026080609093582200_cit2","doi-asserted-by":"publisher","first-page":"501","DOI":"10.1038\/s41586-023-06145-x","article-title":"The Future Transistors","volume":"620","author":"Cao","year":"2023","journal-title":"Nature"},{"key":"2026080609093582200_cit3","doi-asserted-by":"publisher","first-page":"1752","DOI":"10.1007\/s12274-020-2945-z","article-title":"Electronics\nBased on\nTwo-Dimensional Materials: Status and Outlook","volume":"14","author":"Zeng","year":"2021","journal-title":"Nano Res."},{"key":"2026080609093582200_cit4","doi-asserted-by":"publisher","first-page":"768","DOI":"10.1038\/nnano.2014.207","article-title":"Electronics Based on\nTwo-Dimensional Materials","volume":"9","author":"Fiori","year":"2014","journal-title":"Nat. Nanotechnol."},{"key":"2026080609093582200_cit5","doi-asserted-by":"publisher","first-page":"169","DOI":"10.1038\/d41586-019-00793-8","article-title":"How 2D Semiconductors\nCould Extend Moore\u2019s Law","volume":"567","author":"Li","year":"2019","journal-title":"Nature"},{"key":"2026080609093582200_cit6","doi-asserted-by":"publisher","DOI":"10.1002\/adma.202109894","article-title":"Quantum-Engineered\nDevices Based on 2D Materials for Next-Generation Information Processing\nand Storage","volume":"35","author":"Pal","year":"2023","journal-title":"Adv. Mater."},{"key":"2026080609093582200_cit7","doi-asserted-by":"publisher","first-page":"545","DOI":"10.1038\/s41565-020-0724-3","article-title":"Two-Dimensional\nMaterials\nfor Next-Generation Computing Technologies","volume":"15","author":"Liu","year":"2020","journal-title":"Nat. Nanotechnol."},{"key":"2026080609093582200_cit8","doi-asserted-by":"publisher","first-page":"1","DOI":"10.1016\/j.physrep.2021.07.006","article-title":"Sub-10 nm\nTwo-Dimensional Transistors: Theory and Experiment","volume":"938","author":"Quhe","year":"2021","journal-title":"Phys. Rep."},{"key":"2026080609093582200_cit9","doi-asserted-by":"publisher","first-page":"1768","DOI":"10.1007\/s12274-020-2958-7","article-title":"Recent Progresses of\nNMOS and CMOS\nLogic Functions Based on Two-Dimensional Semiconductors","volume":"14","author":"Kong","year":"2021","journal-title":"Nano Res."},{"key":"2026080609093582200_cit10","doi-asserted-by":"publisher","first-page":"11","DOI":"10.1186\/s40580-025-00478-1","article-title":"Recent Advances\nin CMOS-Compatible\nSynthesis and Integration of 2D Materials","volume":"12","author":"Katiyar","year":"2025","journal-title":"Nano\nConverg."},{"key":"2026080609093582200_cit11","doi-asserted-by":"publisher","DOI":"10.1002\/adma.202206939","article-title":"P-Type 2D\nSemiconductors for Future Electronics","volume":"35","author":"Xiong","year":"2023","journal-title":"Adv.\nMater."},{"key":"2026080609093582200_cit12","doi-asserted-by":"publisher","DOI":"10.1038\/s41467-025-66263-0","article-title":"Advancing\n2D CMOS Electronics with\nHigh-Performance p-Type Transistors","volume":"16","author":"Jiang","year":"2025","journal-title":"Nat. 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Electron."},{"key":"2026080609093582200_cit17","doi-asserted-by":"publisher","first-page":"1427","DOI":"10.1016\/j.scib.2024.03.017","article-title":"Identifying Atomically Thin Isolated-Band\nChannels\nfor Intrinsic Steep-Slope Transistors by High-Throughput Study","volume":"69","author":"Qu","year":"2024","journal-title":"Sci. Bull."},{"key":"2026080609093582200_cit18","doi-asserted-by":"publisher","first-page":"3865","DOI":"10.1103\/PhysRevLett.77.3865","article-title":"Generalized\nGradient Approximation\nMade Simple","volume":"77","author":"Perdew","year":"1996","journal-title":"Phys. Rev. Lett."},{"key":"2026080609093582200_cit19","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.65.165401","article-title":"Density-Functional\nMethod for Nonequilibrium Electron Transport","volume":"65","author":"Brandbyge","year":"2002","journal-title":"Phys. Rev. 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Electron Devices"},{"key":"2026080609093582200_cit26","doi-asserted-by":"publisher","first-page":"978","DOI":"10.1109\/LED.2015.2456835","article-title":"Scaling Limit\nof Bilayer Phosphorene FETs","volume":"36","author":"Yin","year":"2015","journal-title":"IEEE Electron Device\nLett."},{"key":"2026080609093582200_cit27","doi-asserted-by":"publisher","first-page":"14683","DOI":"10.1039\/D1TC02937A","article-title":"Performance Limit of\nMonolayer MoSi2N4 Transistors","volume":"9","author":"Sun","year":"2021","journal-title":"J. Mater. Chem. C"},{"key":"2026080609093582200_cit28","doi-asserted-by":"publisher","first-page":"7131","DOI":"10.1109\/TED.2024.3454214","article-title":"Field-Effect Transistor\nBased on MoSi2N4 Monolayer for Digital Logic\nApplications","volume":"71","author":"Khorram","year":"2024","journal-title":"IEEE Trans. Electron Devices"},{"key":"2026080609093582200_cit29","doi-asserted-by":"publisher","first-page":"20633","DOI":"10.1021\/acsami.0c01750","article-title":"Performance Limit of Monolayer WSe2 Transistors: Significantly\nOutperform Their MoS2 Counterpart","volume":"12","author":"Sun","year":"2020","journal-title":"ACS Appl. Mater. Interfaces"},{"key":"2026080609093582200_cit30","doi-asserted-by":"publisher","DOI":"10.1002\/aelm.201800720","article-title":"Sub-10 nm Bilayer Bi2O2Se Transistors","volume":"5","author":"Yang","year":"2019","journal-title":"Adv. Electron. Mater."},{"key":"2026080609093582200_cit31","doi-asserted-by":"publisher","first-page":"532","DOI":"10.1039\/C8NR08852G","article-title":"High-Performance\nSub-10\nnm Monolayer Bi2O2Se Transistors","volume":"11","author":"Quhe","year":"2019","journal-title":"Nanoscale"},{"key":"2026080609093582200_cit32","volume-title":"Digital Integrated Circuits","author":"Rabaey"},{"key":"2026080609093582200_cit33","doi-asserted-by":"publisher","first-page":"3","DOI":"10.1109\/JXCDC.2015.2418033","article-title":"Benchmarking of\nBeyond-CMOS Exploratory Devices for\nLogic Integrated Circuits","volume":"1","author":"Nikonov","year":"2015","journal-title":"IEEE J. Explor. Solid-State\nComput. Devices Circuits"},{"key":"2026080609093582200_cit34","doi-asserted-by":"publisher","first-page":"2498","DOI":"10.1109\/JPROC.2013.2252317","article-title":"Overview of Beyond-CMOS Devices and\na Uniform Methodology\nfor Their Benchmarking","volume":"101","author":"Nikonov","year":"2013","journal-title":"Proc. IEEE"}],"container-title":["The Journal of Physical\nChemistry Letters"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/pubs.acs.org\/doi\/pdf\/10.1021\/acs.jpclett.6c01925","content-type":"application\/pdf","content-version":"vor","intended-application":"unspecified"},{"URL":"https:\/\/pubs.acs.org\/jpclcd\/article-pdf\/17\/31\/8882\/66276818\/acs.jpclett.6c01925.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"syndication"},{"URL":"https:\/\/pubs.acs.org\/jpclcd\/article-pdf\/17\/31\/8882\/66276818\/acs.jpclett.6c01925.pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2026,8,6]],"date-time":"2026-08-06T13:10:08Z","timestamp":1786021808000},"score":1,"resource":{"primary":{"URL":"https:\/\/pubs.acs.org\/jpclcd\/article\/17\/31\/8882\/5233749\/Theoretical-Study-of-High-Performance-Two"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2026,7,27]]},"references-count":34,"journal-issue":{"issue":"31","published-online":{"date-parts":[[2026,7,27]]},"published-print":{"date-parts":[[2026,8,6]]}},"URL":"https:\/\/doi.org\/10.1021\/acs.jpclett.6c01925","relation":{},"ISSN":["1948-7185"],"issn-type":[{"value":"1948-7185","type":"electronic"}],"subject":[],"published":{"date-parts":[[2026,7,27]]}}}