{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,9,10]],"date-time":"2026-09-10T13:28:18Z","timestamp":1789046898986,"version":"build-2803163510"},"reference-count":22,"publisher":"American Chemical Society (ACS)","issue":"36","license":[{"start":{"date-parts":[[2026,8,27]],"date-time":"2026-08-27T00:00:00Z","timestamp":1787788800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2026,8,27]],"date-time":"2026-08-27T00:00:00Z","timestamp":1787788800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"},{"start":{"date-parts":[[2026,8,27]],"date-time":"2026-08-27T00:00:00Z","timestamp":1787788800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-045"}],"funder":[{"DOI":"10.13039\/501100012226","name":"Fundamental Research Funds for the Central Universities","doi-asserted-by":"publisher","id":[{"id":"10.13039\/501100012226","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["62104017"],"award-info":[{"award-number":["62104017"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100015401","name":"Key Research and Development Projects of Shaanxi Province","doi-asserted-by":"publisher","award":["2026CY-YBXM-188"],"award-info":[{"award-number":["2026CY-YBXM-188"]}],"id":[{"id":"10.13039\/501100015401","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2026,9,10]]},"abstract":"<jats:title>Abstract<\/jats:title>\n                  <jats:p>Two-dimensional (2D) van der Waals (vdW) bipolar junction transistors (BJTs) have emerged as promising building blocks for next-generation electronic devices, owing to their atomically sharp interfaces and unique electronic properties. Here, we demonstrated a MoS2\/WSe2\/MoS2 vdW npn BJT assembled by mechanical exfoliation and a deterministic transfer. The device exhibited an excellent bipolar operation under both common-base and common-emitter configurations. More importantly, a common-emitter current gain exceeding 103 was achieved, representing one of the highest experimentally reported values for 2D vdW heterostructure BJTs. A common-base current transfer ratio approaching unity confirms efficient minority carrier transport across the ultrathin WSe2 base. In addition, TCAD simulations reproduce the experimental characteristics and reveal the underlying transport mechanism. The simulations showed that reducing the base thickness effectively enhanced the current gain by suppressing carrier recombination, whereas excessive thinning activated band-to-band tunneling, resulting in a reverse base current and limiting further gain improvement. This work demonstrates a high-performance vdW BJT and provides important design guidelines for optimizing bipolar transport in atomically thin semiconductors.<\/jats:p>","DOI":"10.1021\/acs.jpclett.6c02360","type":"journal-article","created":{"date-parts":[[2026,9,1]],"date-time":"2026-09-01T19:30:27Z","timestamp":1788291027000},"page":"10397-10403","source":"Crossref","is-referenced-by-count":0,"title":["High-Performance Two-Dimensional van der Waals Enabled\nBipolar Junction Transistors with Current Gain Exceeding 103"],"prefix":"10.1021","volume":"17","author":[{"given":"Yuandong","family":"Gao","sequence":"first","affiliation":[{"name":"Sun Yat-Sen University , , ,","place":["Zhuhai, China, 519000"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Zerui","family":"Cai","sequence":"additional","affiliation":[{"name":"Sun Yat-Sen University , , ,","place":["Zhuhai, China, 519000"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Zimu","family":"Wang","sequence":"additional","affiliation":[{"name":"Sun Yat-Sen University , , ,","place":["Zhuhai, China, 519000"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Wanjun","family":"Zhao","sequence":"additional","affiliation":[{"name":"Beijing Institute of Technology , , ,","place":["Beijing, China, 100081"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-9390-4030","authenticated-orcid":true,"given":"Yilin","family":"Sun","sequence":"additional","affiliation":[{"name":"Sun Yat-Sen University , , ,","place":["Zhuhai, China, 519000"]}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"316","published-online":{"date-parts":[[2026,8,27]]},"reference":[{"issue":"7","key":"2026091008093178300_cit1","doi-asserted-by":"publisher","first-page":"1001","DOI":"10.1109\/LED.2022.3176238","article-title":"Highly Efficient\nSelf-Curing Method\nin MOSFET Using Parasitic Bipolar Junction Transistor","volume":"43","author":"Shin","year":"2022","journal-title":"IEEE Electron Device Lett."},{"issue":"33","key":"2026091008093178300_cit2","doi-asserted-by":"publisher","DOI":"10.1002\/adfm.202103385","article-title":"Organic\nElectrochemical Transistor Common-Source Amplifier for Electrophysiological\nMeasurements","volume":"31","author":"Tyrrell","year":"2021","journal-title":"Adv. Funct. Mater."},{"key":"2026091008093178300_cit3","doi-asserted-by":"publisher","first-page":"1648","DOI":"10.1039\/D2TC04108A","article-title":"Emerging trends\nin van der Waals 2D TMD heterojunction bipolar transistors","volume":"11","author":"Aftab","year":"2023","journal-title":"Journal of Materials Chemistry C"},{"issue":"5","key":"2026091008093178300_cit4","doi-asserted-by":"publisher","first-page":"2695","DOI":"10.1021\/acsphotonics.5c00177","article-title":"Precise Control\nof Charge States in Single Quantum Dots Using Bipolar Junction Transistors","volume":"12","author":"Song","year":"2025","journal-title":"ACS Photonics"},{"issue":"9","key":"2026091008093178300_cit5","doi-asserted-by":"publisher","first-page":"1420","DOI":"10.1109\/LED.2023.3296955","article-title":"Cost Effective\nFabrication and Current-Voltage\nCharacteristics of ZnO Homojunction Based n-p-n Bipolar Junction Transistor","volume":"44","author":"Sil","year":"2023","journal-title":"IEEE Electron Device Lett."},{"issue":"6","key":"2026091008093178300_cit6","doi-asserted-by":"publisher","first-page":"3525","DOI":"10.1109\/TED.2024.3384143","article-title":"Characterization and\nModeling of Silicon-on-Insulator\nLateral Bipolar Junction Transistors at Liquid Helium Temperature","volume":"71","author":"Zhang","year":"2024","journal-title":"IEEE Trans. Electron Devices"},{"key":"2026091008093178300_cit7","doi-asserted-by":"publisher","first-page":"119","DOI":"10.1007\/s40820-023-01273-5","article-title":"The Roadmap\nof 2D Materials and Devices Toward Chips","volume":"16","author":"Liu","year":"2024","journal-title":"Nano-Micro\nLetters"},{"issue":"48","key":"2026091008093178300_cit8","doi-asserted-by":"publisher","DOI":"10.1002\/adma.202106886","article-title":"The Road for\n2D Semiconductors in the Silicon Age","volume":"34","author":"Wang","year":"2022","journal-title":"Adv. Mater."},{"key":"2026091008093178300_cit9","doi-asserted-by":"publisher","first-page":"1648","DOI":"10.1039\/D2TC04108A","article-title":"Emerging trends\nin van der Waals 2D TMD heterojunction bipolar transistors","volume":"11","author":"Aftab","year":"2023","journal-title":"Journal of Materials Chemistry C"},{"key":"2026091008093178300_cit10","doi-asserted-by":"publisher","first-page":"3105","DOI":"10.1039\/D4MH01456A","article-title":"High current\ndensity heterojunction bipolar transistors with 3D-GaN\/2D-WSe2 as emitter junctions","volume":"12","author":"Xu","year":"2025","journal-title":"Materials Horizons"},{"issue":"38","key":"2026091008093178300_cit11","doi-asserted-by":"publisher","DOI":"10.1002\/adfm.202204781","article-title":"Bipolar Junction Transistor\nExhibiting Excellent Output Characteristics\nwith a Prompt Response against the Selective Protein","volume":"32","author":"Dastgeer","year":"2022","journal-title":"Adv. Funct. Mater."},{"issue":"11","key":"2026091008093178300_cit12","doi-asserted-by":"publisher","first-page":"11015","DOI":"10.1021\/acsnano.7b05012","article-title":"Atomic-Monolayer\nTwo-Dimensional Lateral Quasi-Heterojunction Bipolar Transistors with\nResonant Tunneling Phenomenon","volume":"11","author":"Lin","year":"2017","journal-title":"ACS Nano"},{"key":"2026091008093178300_cit13","doi-asserted-by":"publisher","first-page":"1733","DOI":"10.1039\/D0NA00201A","article-title":"A gate-tunable\nsymmetric bipolar junction transistor\nfabricated via femtosecond laser processing","volume":"2","author":"Su","year":"2020","journal-title":"Nanoscale Advances"},{"issue":"10","key":"2026091008093178300_cit14","doi-asserted-by":"publisher","first-page":"851","DOI":"10.3390\/nano14100851","article-title":"AC Characteristics of van der Waals Bipolar Junction\nTransistors Using an MoS2\/WSe2\/MoS2 Heterostructure","volume":"14","author":"Yan","year":"2024","journal-title":"Nanomaterials"},{"issue":"3","key":"2026091008093178300_cit15","doi-asserted-by":"publisher","first-page":"3645","DOI":"10.1021\/acsnano.4c14065","article-title":"van der Waals Photonic Bipolar Junction\nTransistors Capable of Simultaneously Discerning Wavelength Bands\nand Dual-Function Chip Application","volume":"19","author":"Zhu","year":"2025","journal-title":"ACS Nano"},{"issue":"23","key":"2026091008093178300_cit16","doi-asserted-by":"publisher","first-page":"1234","DOI":"10.1049\/el:19860846","article-title":"Early effect of high-current-gain heterojunction bipolar\ntransistor","volume":"22","author":"Wang","year":"1986","journal-title":"Electron. Lett."},{"key":"2026091008093178300_cit17","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevResearch.3.023158","article-title":"Ballistic\ntwo-dimensional lateral heterojunction bipolar transistor","volume":"3","author":"Lucchesi","year":"2021","journal-title":"Physical Review Research"},{"issue":"1","key":"2026091008093178300_cit18","doi-asserted-by":"publisher","first-page":"204","DOI":"10.1021\/acs.nanolett.4c04722","article-title":"High Current\nGain MoS2 Bipolar Junction Transistor Based on Metal\u2013Semiconductor\nSchottky Contacts","volume":"25","author":"Wang","year":"2025","journal-title":"Nano Lett."},{"key":"2026091008093178300_cit19","doi-asserted-by":"publisher","first-page":"2085","DOI":"10.1007\/s12274-020-2814-9","article-title":"Ultra-high\ncurrent gain tunneling hot-electron transfer amplifier based on vertical\nvan der Waals heterojunctions","volume":"13","author":"Zhao","year":"2020","journal-title":"Nano Research"},{"issue":"8","key":"2026091008093178300_cit20","doi-asserted-by":"publisher","first-page":"718","DOI":"10.3390\/nano14080718","article-title":"Realization\nof High Current Gain for Van der Waals\nMoS2\/WSe2\/MoS2 Bipolar Junction Transistor","volume":"14","author":"Yan","year":"2024","journal-title":"Nanomaterials"},{"key":"2026091008093178300_cit21","doi-asserted-by":"publisher","DOI":"10.35848\/1347-4065\/ae42a9","article-title":"Fabrication of a p-Si\/MoS2\/WSe2 bipolar junction transistor via a CVD-grown MoS2 on p-type\nsilicon","volume":"65","author":"Hsu","year":"2026","journal-title":"Jpn. J. Appl. Phys."},{"issue":"52","key":"2026091008093178300_cit22","doi-asserted-by":"publisher","DOI":"10.1002\/adma.202106537","article-title":"2D Cu9S5\/PtS2\/WSe2 Double\nHeterojunction Bipolar Transistor with High Current Gain","volume":"33","author":"Yang","year":"2021","journal-title":"Adv. Mater."}],"container-title":["The Journal of Physical Chemistry Letters"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/pubs.acs.org\/doi\/pdf\/10.1021\/acs.jpclett.6c02360","content-type":"application\/pdf","content-version":"vor","intended-application":"unspecified"},{"URL":"https:\/\/pubs.acs.org\/jpclcd\/article-pdf\/17\/36\/10397\/67508973\/acs.jpclett.6c02360.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"syndication"},{"URL":"https:\/\/pubs.acs.org\/jpclcd\/article-pdf\/17\/36\/10397\/67508973\/acs.jpclett.6c02360.pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2026,9,10]],"date-time":"2026-09-10T12:30:20Z","timestamp":1789043420000},"score":1,"resource":{"primary":{"URL":"https:\/\/pubs.acs.org\/jpclcd\/article\/17\/36\/10397\/5339002\/High-Performance-Two-Dimensional-van-der-Waals"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2026,8,27]]},"references-count":22,"journal-issue":{"issue":"36","published-online":{"date-parts":[[2026,8,27]]},"published-print":{"date-parts":[[2026,9,10]]}},"URL":"https:\/\/doi.org\/10.1021\/acs.jpclett.6c02360","relation":{},"ISSN":["1948-7185"],"issn-type":[{"value":"1948-7185","type":"electronic"}],"subject":[],"published":{"date-parts":[[2026,8,27]]}}}