{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,10,1]],"date-time":"2026-10-01T14:01:55Z","timestamp":1790863315517,"version":"4.1.0"},"reference-count":70,"publisher":"American Chemical Society (ACS)","issue":"39","license":[{"start":{"date-parts":[[2026,9,22]],"date-time":"2026-09-22T00:00:00Z","timestamp":1790035200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2026,9,22]],"date-time":"2026-09-22T00:00:00Z","timestamp":1790035200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"},{"start":{"date-parts":[[2026,9,22]],"date-time":"2026-09-22T00:00:00Z","timestamp":1790035200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-045"}],"funder":[{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["11704282"],"award-info":[{"award-number":["11704282"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/na","name":"Natural Science Foundation of Tianjin City","doi-asserted-by":"publisher","award":["18JCQNJC72900"],"award-info":[{"award-number":["18JCQNJC72900"]}],"id":[{"id":"10.13039\/na","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/na","name":"Education Commission Research Project of Tianjin City","doi-asserted-by":"publisher","award":["2017KJ251"],"award-info":[{"award-number":["2017KJ251"]}],"id":[{"id":"10.13039\/na","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2026,10,1]]},"abstract":"<jats:title>Abstract<\/jats:title>\n                  <jats:p>Two-dimensional inorganic molecular crystals (IMCs) are emerging van der Waals materials with discrete molecular cages and wide bandgaps, but their contact physics with metal electrodes remains largely unexplored. Here, we report a first-principles study of monolayer Sb2O3, a prototypical IMC, contacted with bulk metals (Ag, Au, Cu, Ni, Pd, Pt) and 2D electrodes (graphene and electride Ba2N). Sb2O3 is dynamically and thermally stable, with an indirect bandgap of 3.26 eV and a work function of 5.68 eV. Cu forms a true n-type Ohmic contact; Ag and Ni form thin n-type Schottky barriers with moderate tunnel resistance; Au, Pd, and Pt form thick n-type Schottky barriers with high resistance due to large work functions and stronger Fermi-level pinning. The extracted pinning factor S = 0.62 indicates moderate suppression of metal-induced gap states. Remarkably, Ba2N creates an atomically sharp van der Waals interface, delivering an n-type Ohmic contact with near-zero Schottky barrier, \u223c100% tunneling probability, and tunneling specific resistivity approaching the quantum limit, far outperforming graphene. These results establish Sb2O3 as a viable channel material and Ba2N as a transformative electrode for low-resistance molecular-crystal nanoelectronics.<\/jats:p>","DOI":"10.1021\/acs.jpclett.6c02583","type":"journal-article","created":{"date-parts":[[2026,9,22]],"date-time":"2026-09-22T11:03:36Z","timestamp":1790075016000},"page":"11110-11118","source":"Crossref","is-referenced-by-count":0,"title":["Unveiling the\nContact Physics of Molecular Crystal\nSb2O3: From Conventional Metals to 2D Electride\nElectrodes for High-Performance Transistors"],"prefix":"10.1021","volume":"17","author":[{"given":"Chengzhi","family":"Yang","sequence":"first","affiliation":[{"name":"Tianjin University of Technology , , ,","place":["Tianjin, China, 300384"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Shusheng","family":"Song","sequence":"additional","affiliation":[{"name":"Tianjin University of Technology , , ,","place":["Tianjin, China, 300384"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Luoxin","family":"Wang","sequence":"additional","affiliation":[{"name":"Tianjin University of Technology , , ,","place":["Tianjin, China, 300384"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-3568-701X","authenticated-orcid":true,"given":"Baozeng","family":"Zhou","sequence":"additional","affiliation":[{"name":"Tianjin University of Technology , , ,","place":["Tianjin, China, 300384"]},{"name":"Tianjin University of Technology , , ,","place":["Tianjin, China, 300384"]}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"316","published-online":{"date-parts":[[2026,9,22]]},"reference":[{"issue":"3","key":"2026100109083772900_cit1","doi-asserted-by":"publisher","first-page":"33","DOI":"10.1109\/N-SSC.2006.4785860","article-title":"Cramming\nmore components onto integrated circuits","volume":"11","author":"Moore","year":"2006","journal-title":"IEEE\nSolid-State Circuits Society Newsletter"},{"issue":"5","key":"2026100109083772900_cit2","doi-asserted-by":"publisher","first-page":"256","DOI":"10.1109\/JSSC.1974.1050511","article-title":"Design\nof ion-implanted MOSFET\u2019s with very small\nphysical dimensions","volume":"9","author":"Dennard","year":"1974","journal-title":"IEEE Journal of Solid-State\nCircuits"},{"key":"2026100109083772900_cit3","doi-asserted-by":"crossref","DOI":"10.1017\/CBO9781139195065","volume-title":"Fundamentals of Modern\nVLSI Devices","author":"Taur","year":"2009"},{"issue":"1","key":"2026100109083772900_cit4","doi-asserted-by":"publisher","DOI":"10.1149\/2162-8777\/ada825","article-title":"Review\u2500Challenges\nand Innovations in Nano-Computing and Reliable Interconnect Technologies","volume":"14","author":"Gupta","year":"2025","journal-title":"ECS Journal of Solid State Science and Technology"},{"key":"2026100109083772900_cit5","first-page":"73","volume-title":"Short-Channel Effects\nin MOSFETs","author":"Khanna","year":"2016"},{"issue":"6071","key":"2026100109083772900_cit6","doi-asserted-by":"publisher","first-page":"947","DOI":"10.1126\/science.1218461","article-title":"Field-Effect\nTunneling Transistor Based on Vertical Graphene Heterostructures","volume":"335","author":"Britnell","year":"2012","journal-title":"Science"},{"issue":"2","key":"2026100109083772900_cit7","doi-asserted-by":"publisher","first-page":"100","DOI":"10.1038\/nnano.2012.224","article-title":"Vertical field-effect\ntransistor based on graphene\u2013WS2 heterostructures\nfor flexible and transparent electronics","volume":"8","author":"Georgiou","year":"2013","journal-title":"Nat.\nNanotechnol."},{"key":"2026100109083772900_cit8","doi-asserted-by":"crossref","unstructured":"Roy, T.; Tosun, M.; Amani, M.; Lien, D. H.; Kiriya, D.; Zhao, P.; Desai, S.; Sachid, A.; Madhvapathy, S. R.; Javey, A.\n          Van der Waals heterostructures for tunnel transistors.  2015 Fourth Berkeley Symposium on Energy Efficient Electronic\nSystems (E3S); IEEE, 2015; pp 1\u20132.","DOI":"10.1109\/E3S.2015.7336791"},{"issue":"7900","key":"2026100109083772900_cit9","doi-asserted-by":"publisher","first-page":"259","DOI":"10.1038\/s41586-021-04323-3","article-title":"Vertical MoS2 transistors with sub-1-nm gate lengths","volume":"603","author":"Wu","year":"2022","journal-title":"Nature"},{"issue":"7","key":"2026100109083772900_cit10","doi-asserted-by":"publisher","first-page":"545","DOI":"10.1038\/s41928-024-01176-2","article-title":"Yttrium-doping-induced\nmetallization of molybdenum\ndisulfide for ohmic contacts in two-dimensional transistors","volume":"7","author":"Jiang","year":"2024","journal-title":"Nature Electronics"},{"issue":"15","key":"2026100109083772900_cit11","doi-asserted-by":"publisher","first-page":"2108425","DOI":"10.1002\/adma.202108425","article-title":"Fermi Level\nPinning Dependent 2D Semiconductor Devices: Challenges and Prospects","volume":"34","author":"Liu","year":"2022","journal-title":"Adv. Mater."},{"issue":"9","key":"2026100109083772900_cit12","doi-asserted-by":"publisher","first-page":"1417","DOI":"10.1039\/D4NH00030G","article-title":"Innovations of metallic contacts on semiconducting\n2D transition metal dichalcogenides toward advanced 3D-structured\nfield-effect transistors","volume":"9","author":"Kim","year":"2024","journal-title":"Nanoscale Horizons"},{"issue":"11","key":"2026100109083772900_cit13","doi-asserted-by":"publisher","first-page":"10227","DOI":"10.1007\/s12274-024-6877-x","article-title":"sp2 to sp3\nhybridization transformation in 2D metal-semiconductor\ncontact interface suppresses tunneling barrier and Fermi level pinning\nsimultaneously","volume":"17","author":"Shan","year":"2024","journal-title":"Nano Research"},{"key":"2026100109083772900_cit14","doi-asserted-by":"publisher","first-page":"4728","DOI":"10.1038\/s41467-019-12569-9","article-title":"Two-dimensional inorganic\nmolecular crystals. Nature","volume":"10","author":"Han","year":"2019","journal-title":"Communications"},{"issue":"12","key":"2026100109083772900_cit15","doi-asserted-by":"publisher","first-page":"906","DOI":"10.1038\/s41928-021-00683-w","article-title":"A wafer-scale van der\nWaals dielectric made from an inorganic molecular\ncrystal film","volume":"4","author":"Liu","year":"2021","journal-title":"Nature Electronics"},{"issue":"9","key":"2026100109083772900_cit16","doi-asserted-by":"publisher","first-page":"1078","DOI":"10.1038\/s41563-023-01626-w","article-title":"Scalable integration of hybrid high-\u03ba\ndielectric materials on two-dimensional semiconductors","volume":"22","author":"Xu","year":"2023","journal-title":"Nat. Mater."},{"issue":"27","key":"2026100109083772900_cit17","doi-asserted-by":"publisher","first-page":"18556","DOI":"10.1021\/jacs.4c04450","article-title":"Discovery and manipulation of van der Waals polarons in Sb2O3 ultrathin molecular crystal","volume":"146","author":"Zhang","year":"2024","journal-title":"J. Am. Chem. Soc."},{"issue":"11","key":"2026100109083772900_cit18","doi-asserted-by":"publisher","first-page":"1641","DOI":"10.1038\/s41565-025-02013-z","article-title":"Molecular\ncrystal memristors","volume":"20","author":"Qin","year":"2025","journal-title":"Nat. Nanotechnol."},{"key":"2026100109083772900_cit19","doi-asserted-by":"publisher","first-page":"1402","DOI":"10.1038\/s41467-025-68139-9","article-title":"Perpendicular neuromorphic\nchannels facilitate lateral inhibition for tactile location","volume":"17","author":"Liu","year":"2026","journal-title":"Nat. Commun."},{"issue":"20","key":"2026100109083772900_cit20","doi-asserted-by":"publisher","first-page":"13098","DOI":"10.1021\/acsnano.4c01883","article-title":"Van der Waals Epitaxially Grown Molecular Crystal Dielectric\nSb2O3 for 2D Electronics","volume":"18","author":"Ryu","year":"2024","journal-title":"ACS Nano"},{"issue":"10","key":"2026100109083772900_cit21","doi-asserted-by":"publisher","first-page":"2416160","DOI":"10.1002\/adma.202416160","article-title":"2D Molecular Crystals for Electronic\nand Optoelectronic Devices: Status and Challenges","volume":"37","author":"Ma","year":"2025","journal-title":"Adv. Mater."},{"issue":"40","key":"2026100109083772900_cit22","doi-asserted-by":"publisher","first-page":"2302230","DOI":"10.1002\/smll.202302230","article-title":"On the Working Mechanisms\nof Molecules-Based Van der Waals Dielectrics","volume":"19","author":"Li","year":"2023","journal-title":"Small"},{"issue":"1","key":"2026100109083772900_cit23","doi-asserted-by":"publisher","first-page":"1619","DOI":"10.1021\/acsnano.4c15117","article-title":"Reconfiguring van\nder Waals Metal\u2013Semiconductor Contacts via Selenium Intercalation\/Deintercalation\nPost-Treatment","volume":"19","author":"Kwon","year":"2025","journal-title":"ACS Nano"},{"key":"2026100109083772900_cit24","doi-asserted-by":"publisher","first-page":"10675","DOI":"10.1038\/s41467-025-65695-y","article-title":"Self-passivation\nreduces the Fermi\nlevel pinning in the metal-semiconductor contacts","volume":"16","author":"Xiang","year":"2025","journal-title":"Nat. Commun."},{"key":"2026100109083772900_cit25","doi-asserted-by":"publisher","DOI":"10.1126\/science.aeb2271","article-title":"Device-scaling constraints\nimposed by the van der Waals\ngap formed in two-dimensional materials","volume":"392","author":"Pourfath","year":"2026","journal-title":"Science"},{"key":"2026100109083772900_cit26","doi-asserted-by":"publisher","first-page":"4018","DOI":"10.1038\/s41467-025-59174-7","article-title":"2D Cd metal\ncontacts\nvia low-temperature van der Waals epitaxy towards high-performance\n2D transistors","volume":"16","author":"Yue","year":"2025","journal-title":"Nat. Commun."},{"issue":"7707","key":"2026100109083772900_cit27","doi-asserted-by":"publisher","first-page":"696","DOI":"10.1038\/s41586-018-0129-8","article-title":"Approaching\nthe Schottky\u2013Mott limit in van der Waals metal\u2013semiconductor\njunctions","volume":"557","author":"Liu","year":"2018","journal-title":"Nature"},{"issue":"12","key":"2026100109083772900_cit28","doi-asserted-by":"publisher","first-page":"1195","DOI":"10.1038\/nmat4452","article-title":"Electrical contacts\nto two-dimensional semiconductors","volume":"14","author":"Allain","year":"2015","journal-title":"Nat. Mater."},{"issue":"7858","key":"2026100109083772900_cit29","doi-asserted-by":"publisher","first-page":"211","DOI":"10.1038\/s41586-021-03472-9","article-title":"Ultralow contact resistance between\nsemimetal and monolayer semiconductors","volume":"593","author":"Shen","year":"2021","journal-title":"Nature"},{"issue":"7943","key":"2026100109083772900_cit30","doi-asserted-by":"publisher","first-page":"274","DOI":"10.1038\/s41586-022-05431-4","article-title":"Approaching the quantum\nlimit in two-dimensional semiconductor contacts","volume":"613","author":"Li","year":"2023","journal-title":"Nature"},{"issue":"7750","key":"2026100109083772900_cit31","doi-asserted-by":"publisher","first-page":"70","DOI":"10.1038\/s41586-019-1052-3","article-title":"Van der Waals contacts between three-dimensional\nmetals\nand two-dimensional semiconductors","volume":"568","author":"Wang","year":"2019","journal-title":"Nature"},{"issue":"12","key":"2026100109083772900_cit32","doi-asserted-by":"publisher","first-page":"5418","DOI":"10.1021\/acsaelm.5c00392","article-title":"Contact Engineering in 2D Materials\nvia an nm-Thick Hydrosoluble Polymer Insertion","volume":"7","author":"Naoi","year":"2025","journal-title":"ACS Applied Electronic Materials"},{"issue":"25","key":"2026100109083772900_cit33","doi-asserted-by":"publisher","first-page":"10627","DOI":"10.1021\/acs.jpcc.4c01323","article-title":"Asymmetric\nBand Alignments and Remark Defect Tolerability at the Interface of\nhigh-\u03ba Dielectric Sb2O3 and 2D Semiconductor\nMoS2","volume":"128","author":"Liu","year":"2024","journal-title":"J. Phys. Chem. C"},{"key":"2026100109083772900_cit34","doi-asserted-by":"publisher","first-page":"100392","DOI":"10.1016\/j.mtnano.2023.100392","article-title":"Realization\nof Fermi Level Unpinning and High-Quality P-Type Contacts for 2D \u03b2-TeO2 by a Built-In Intercalation. Materials Today","volume":"24","author":"Zhang","year":"2023","journal-title":"Nano"},{"issue":"46","key":"2026100109083772900_cit35","doi-asserted-by":"publisher","DOI":"10.1002\/smll.202504150","article-title":"Engineering 2D Van der Waals Electrode\nvia MBE-Grown Weyl Semimetal\n1T\u2019-Wte2 for Enhanced Photodetection in InSe","volume":"21","author":"Khan","year":"2025","journal-title":"Small"},{"issue":"4","key":"2026100109083772900_cit36","doi-asserted-by":"publisher","first-page":"4718","DOI":"10.1021\/acsnano.4c15341","article-title":"Unraveling the Role\nof Interfacial Interactions in Electrical Contacts of Atomically Thin\nTransition-Metal Dichalcogenides","volume":"19","author":"Gong","year":"2025","journal-title":"ACS Nano"},{"issue":"7","key":"2026100109083772900_cit37","doi-asserted-by":"publisher","first-page":"3110","DOI":"10.1021\/jacs.8b12212","article-title":"van der Waals\nStacking Induced Transition from Schottky to Ohmic Contacts: 2D Metals\non Multilayer InSe","volume":"141","author":"Shen","year":"2019","journal-title":"J. Am. Chem. Soc."},{"issue":"8","key":"2026100109083772900_cit38","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.110.085406","article-title":"Two-dimensional\nelectron gas on the surface of alkali-earth metal based electrides:\nAssistance to overcome tunneling barriers in ohmic contacts","volume":"110","author":"Pan","year":"2024","journal-title":"Phys. Rev. B"},{"key":"2026100109083772900_cit39","doi-asserted-by":"publisher","DOI":"10.1002\/adfm.202513567","article-title":"2D Electron\nGas-Induced the Lowered Tunneling Barrier and Ohmic Behavior Simultaneously\nin 2D Metal-Semiconductor Contacts","volume":"36","author":"Niu","year":"2026","journal-title":"Adv. Funct.\nMater."},{"issue":"7437","key":"2026100109083772900_cit40","doi-asserted-by":"publisher","first-page":"336","DOI":"10.1038\/nature11812","article-title":"Dicalcium nitride as a two-dimensional\nelectride with\nan anionic electron layer","volume":"494","author":"Lee","year":"2013","journal-title":"Nature"},{"issue":"25","key":"2026100109083772900_cit41","doi-asserted-by":"publisher","first-page":"17508","DOI":"10.1021\/jacs.4c05723","article-title":"BaCu, a Two-Dimensional Electride\nwith Cu Anions","volume":"146","author":"Wan","year":"2024","journal-title":"J. Am. Chem. Soc."},{"issue":"5","key":"2026100109083772900_cit42","doi-asserted-by":"publisher","first-page":"3121","DOI":"10.1021\/acs.chemrev.0c01071","article-title":"Advances in materials and applications of inorganic\nelectrides","volume":"121","author":"Hosono","year":"2021","journal-title":"Chem. Rev."},{"issue":"17","key":"2026100109083772900_cit43","doi-asserted-by":"publisher","first-page":"2473","DOI":"10.1039\/C8CC09416K","article-title":"Two-dimensional\nsemiconducting and\nsingle-crystalline antimony trioxide directly-grown on monolayer graphene","volume":"55","author":"Wu","year":"2019","journal-title":"Chem. Commun."},{"issue":"6","key":"2026100109083772900_cit44","doi-asserted-by":"publisher","first-page":"819","DOI":"10.1021\/acs.accounts.1c00675","article-title":"Charge Transport\nin Organic Semiconductors: The Perspective\nfrom Nonadiabatic Molecular Dynamics","volume":"55","author":"Giannini","year":"2022","journal-title":"Acc. Chem.\nRes."},{"issue":"40","key":"2026100109083772900_cit45","doi-asserted-by":"publisher","DOI":"10.1002\/advs.202509170","article-title":"Strategic Mobility\nEngineering in 2D Semiconductor-based FETs for Enhanced Electronic\nDevices","volume":"12","author":"Sim","year":"2025","journal-title":"Advanced Science"},{"key":"2026100109083772900_cit46","volume-title":"Decision letter for \u201cInterface Phase Engineering\nof Monolayer\nSb2O3 on Au(111)\u201d","year":"2026"},{"issue":"1","key":"2026100109083772900_cit47","doi-asserted-by":"publisher","first-page":"43","DOI":"10.1038\/s41699-024-00477-6","article-title":"Relaxation effects in transition\nmetal dichalcogenide bilayer heterostructures. npj 2D","volume":"8","author":"Li","year":"2024","journal-title":"Materials and Applications"},{"key":"2026100109083772900_cit48","doi-asserted-by":"publisher","first-page":"1290","DOI":"10.1038\/s41467-021-21363-5","article-title":"Direct imaging and electronic structure\nmodulation\nof moire\u0301 superlattices at the 2D\/3D interface","volume":"12","author":"Reidy","year":"2021","journal-title":"Nat. Commun."},{"issue":"8","key":"2026100109083772900_cit49","doi-asserted-by":"publisher","DOI":"10.1088\/0953-8984\/21\/8\/084204","article-title":"A grid-based\nBader analysis algorithm\nwithout lattice bias","volume":"21","author":"Tang","year":"2009","journal-title":"J. Phys.: Condens. Matter"},{"issue":"3","key":"2026100109083772900_cit50","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevX.4.031005","article-title":"Computational Study\nof Metal Contacts to Monolayer Transition-Metal Dichalcogenide Semiconductors","volume":"4","author":"Kang","year":"2014","journal-title":"Physical Review X"},{"issue":"9","key":"2026100109083772900_cit51","doi-asserted-by":"publisher","first-page":"5411","DOI":"10.1021\/acs.jpcc.8b10971","article-title":"Universal\nFermi-Level Pinning in Transition-Metal Dichalcogenides","volume":"123","author":"Sotthewes","year":"2019","journal-title":"J. Phys. Chem. C"},{"issue":"9","key":"2026100109083772900_cit52","doi-asserted-by":"publisher","first-page":"11903","DOI":"10.1021\/acsami.1c23918","article-title":"Reduced Fermi\nLevel Pinning at Physisorptive Sites\nof Moire-MoS2\/Metal Schottky Barriers","volume":"14","author":"Zhang","year":"2022","journal-title":"ACS Appl. Mater. Interfaces"},{"issue":"4","key":"2026100109083772900_cit53","doi-asserted-by":"publisher","DOI":"10.1126\/sciadv.1600069","article-title":"Van der\nWaals metal-semiconductor\njunction: Weak Fermi level pinning enables effective tuning of Schottky\nbarrier","volume":"2","author":"Liu","year":"2016","journal-title":"Science Advances"},{"key":"2026100109083772900_cit54","doi-asserted-by":"publisher","first-page":"2201056","DOI":"10.1002\/aelm.202201056","article-title":"Efficient\nOhmic Contact in Monolayer CrX2N4 (X = C, Si)\nBased Field-Effect Transistors","volume":"9","author":"Shu","year":"2023","journal-title":"Advanced Electronic\nMaterials"},{"issue":"3","key":"2026100109083772900_cit55","doi-asserted-by":"publisher","first-page":"1005","DOI":"10.1039\/D5NA00949A","article-title":"Intrinsic\nOhmic contact and electric-field\ntunable interface in a 2D NbS2\/As2C3 metal-semiconductor heterostructure","volume":"8","author":"Sang","year":"2026","journal-title":"Nanoscale\nAdvances"},{"issue":"1","key":"2026100109083772900_cit56","doi-asserted-by":"publisher","first-page":"100298","DOI":"10.1016\/j.xcrp.2020.100298","article-title":"Ohmic Contact Engineering for Two-Dimensional\nMaterials","volume":"2","author":"Zheng","year":"2021","journal-title":"Cell Reports Physical Science"},{"key":"2026100109083772900_cit57","doi-asserted-by":"publisher","first-page":"180","DOI":"10.1186\/s11671-020-03409-7","article-title":"Strain and Electric\nField Controllable Schottky Barriers\nand Contact Types in Graphene-MoTe2 van der Waals Heterostructure","volume":"15","author":"Lan","year":"2020","journal-title":"Nanoscale Res. Lett."},{"issue":"15","key":"2026100109083772900_cit58","doi-asserted-by":"publisher","first-page":"1174","DOI":"10.3390\/nano15151174","article-title":"First-Principles Study on the Modulation\nof Schottky Barrier in Graphene\/Janus MoSSe Heterojunctions by Interface\nContact and Electric Field Effects","volume":"15","author":"Zhang","year":"2025","journal-title":"Nanomaterials"},{"issue":"1","key":"2026100109083772900_cit59","doi-asserted-by":"publisher","first-page":"1655","DOI":"10.1021\/jacs.5c18589","article-title":"Coexistence of Ohmic\nContact and Fermi Level Pinning at 2D Electride\/2D Semiconductor Interfaces","volume":"148","author":"Pan","year":"2026","journal-title":"J. Am. Chem. Soc."},{"issue":"45","key":"2026100109083772900_cit60","doi-asserted-by":"publisher","first-page":"24482","DOI":"10.1021\/jacs.3c09362","article-title":"A 2D Ba2N Electride for Transition Metal-Free\nN2 Dissociation under Mild Conditions","volume":"145","author":"Zhang","year":"2023","journal-title":"J. Am. Chem. Soc."},{"issue":"3","key":"2026100109083772900_cit61","doi-asserted-by":"publisher","first-page":"259","DOI":"10.1109\/5.915374","article-title":"Device scaling\nlimits of Si MOSFETs and their application\ndependencies","volume":"89","author":"Frank","year":"2001","journal-title":"Proceedings of the IEEE"},{"issue":"51","key":"2026100109083772900_cit62","doi-asserted-by":"publisher","first-page":"17556","DOI":"10.1021\/acs.nanolett.5c03813","article-title":"Strain-Dependent Contact Engineering in Monolayer MoS2: Enhancing Charge Carrier Transport through 1D Edge Contacts","volume":"25","author":"Harm","year":"2025","journal-title":"Nano Lett."},{"issue":"6431","key":"2026100109083772900_cit63","doi-asserted-by":"publisher","first-page":"1059","DOI":"10.1126\/science.aav1910","article-title":"Tuning\nsuperconductivity in twisted bilayer graphene","volume":"363","author":"Yankowitz","year":"2019","journal-title":"Science"},{"issue":"24","key":"2026100109083772900_cit64","doi-asserted-by":"publisher","first-page":"2002697","DOI":"10.1002\/advs.202002697","article-title":"2D Materials and Heterostructures at Extreme Pressure","volume":"7","author":"Zhang","year":"2020","journal-title":"Advanced Science"},{"key":"2026100109083772900_cit65","doi-asserted-by":"publisher","first-page":"2207018","DOI":"10.1002\/adfm.202207018","article-title":"Electric Field Screening in Gate-Tunable van der Waals 2D-Metal\/InSe\nJunctions","volume":"32","author":"Shen","year":"2022","journal-title":"Adv. Funct. Mater."},{"issue":"6","key":"2026100109083772900_cit66","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.114.066803","article-title":"van\nder Waals Heterostructure of\nPhosphorene and Graphene: Tuning the Schottky Barrier and Doping by\nElectrostatic Gating","volume":"114","author":"Padilha","year":"2015","journal-title":"Phys. Rev. Lett."},{"issue":"24","key":"2026100109083772900_cit67","doi-asserted-by":"publisher","first-page":"8825","DOI":"10.1039\/D4TC00753K","article-title":"Few-layer \u03b1-Sb2O3 molecular crystals as high- \u03ba van der\nWaals dielectrics: electronic decoupling and significant surface ionic\nbehaviors","volume":"12","author":"Liu","year":"2024","journal-title":"Journal of Materials Chemistry C"},{"issue":"49","key":"2026100109083772900_cit68","doi-asserted-by":"publisher","first-page":"16089","DOI":"10.1021\/jacs.6b10114","article-title":"Experimental Demonstration of an\nElectride as a 2D Material","volume":"138","author":"Druffel","year":"2016","journal-title":"J. Am. Chem. Soc."},{"issue":"1","key":"2026100109083772900_cit69","doi-asserted-by":"publisher","first-page":"6647","DOI":"10.1038\/ncomms7647","article-title":"Transport\nproperties of pristine few-layer black phosphorus by van der Waals\npassivation in an inert atmosphere","volume":"6","author":"Doganov","year":"2015","journal-title":"Nat. Commun."},{"issue":"46","key":"2026100109083772900_cit70","doi-asserted-by":"publisher","first-page":"25316","DOI":"10.1021\/acs.jpcc.0c07337","article-title":"Oxidation,\nStability, and Magnetic Ground States of\nTwo-Dimensional Layered Electrides","volume":"124","author":"Li","year":"2020","journal-title":"J. Phys.\nChem. C"}],"container-title":["The Journal of Physical\nChemistry Letters"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/pubs.acs.org\/doi\/pdf\/10.1021\/acs.jpclett.6c02583","content-type":"application\/pdf","content-version":"vor","intended-application":"unspecified"},{"URL":"https:\/\/pubs.acs.org\/jpclcd\/article-pdf\/17\/39\/11110\/68593358\/acs.jpclett.6c02583.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"syndication"},{"URL":"https:\/\/pubs.acs.org\/jpclcd\/article-pdf\/17\/39\/11110\/68593358\/acs.jpclett.6c02583.pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2026,10,1]],"date-time":"2026-10-01T13:19:56Z","timestamp":1790860796000},"score":1,"resource":{"primary":{"URL":"https:\/\/pubs.acs.org\/jpclcd\/article\/17\/39\/11110\/5435025\/Unveiling-the-Contact-Physics-of-Molecular-Crystal"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2026,9,22]]},"references-count":70,"journal-issue":{"issue":"39","published-online":{"date-parts":[[2026,9,22]]},"published-print":{"date-parts":[[2026,10,1]]}},"URL":"https:\/\/doi.org\/10.1021\/acs.jpclett.6c02583","relation":{},"ISSN":["1948-7185"],"issn-type":[{"value":"1948-7185","type":"electronic"}],"subject":[],"published":{"date-parts":[[2026,9,22]]}}}