{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,10,23]],"date-time":"2026-10-23T19:43:44Z","timestamp":1792784624125,"version":"4.5.0"},"reference-count":36,"publisher":"American Chemical Society (ACS)","issue":"42","license":[{"start":{"date-parts":[[2026,10,10]],"date-time":"2026-10-10T00:00:00Z","timestamp":1791590400000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2026,10,10]],"date-time":"2026-10-10T00:00:00Z","timestamp":1791590400000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"},{"start":{"date-parts":[[2026,10,10]],"date-time":"2026-10-10T00:00:00Z","timestamp":1791590400000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-045"}],"funder":[{"name":"Shanghai Key Laboratory of Optical Coatings and Spectral Modulation","award":["OCSM202503"],"award-info":[{"award-number":["OCSM202503"]}]},{"name":"National Natural Science Foundation of China (NSFC)","award":["62304152"],"award-info":[{"award-number":["62304152"]}],"id":[{"id":"https:\/\/ror.org\/01h0zpd94","id-type":"ROR","asserted-by":"crossref"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2026,10,22]]},"abstract":"<jats:title>Abstract<\/jats:title>\n                  <jats:p>Bioinspired neuromorphic architectures featuring sensory-memory-computing integration offer a highly effective approach to overcoming the traditional von Neumann computing bottleneck. However, existing optoelectronic memristors universally face challenges such as high static power consumption and difficulties in modulating resistive switching behaviors during array-level integration. Here, an ultralow-power Ag\/PMMA\/ZnO\/Sb2S3\/FTO heterojunction memristor operating at the nanoampere scale is reported. By engineering a Type-II ZnO\/Sb2S3 band alignment and incorporating an ultrathin PMMA tunneling barrier, the device achieves synergistic carrier regulation and broadband charge separation. Notably, light illumination significantly reduces the SET voltage from 5.0 to 2.65 V. A collaborative switching model, governed by photocarrier injection and electric-field-driven dynamics, is proposed to elucidate the mechanism of threshold modulation at the interface. Functionally, the device emulates essential synaptic plasticity and realizes an advanced artificial visual nociceptor featuring threshold-triggering, nonadaptation, and relaxation. Furthermore, simulation-based spatiotemporal image processing, including dynamic forgetting and visual persistence, is demonstrated. This work establishes a new mechanistic paradigm for ultralow-power, multimodal neuromorphic vision hardware, paving the way for next-generation energy-efficient bioinspired perception systems.<\/jats:p>","DOI":"10.1021\/acs.jpclett.6c02683","type":"journal-article","created":{"date-parts":[[2026,10,10]],"date-time":"2026-10-10T15:02:07Z","timestamp":1791644527000},"page":"12139-12146","source":"Crossref","is-referenced-by-count":0,"title":["Photogenerated\nCharge Injection-Modulated Ultralow-Power\nZnO\/Sb2S3 Heterojunction Memristors for Artificial\nVisual Nociception and Persistence Systems"],"prefix":"10.1021","volume":"17","author":[{"given":"Yuanhui","family":"Yang","sequence":"first","affiliation":[{"name":"Tianjin University of Technology , , ,","place":["Tianjin, China, 300384"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0009-0009-2453-0923","authenticated-orcid":true,"given":"Yuanfeng","family":"Sun","sequence":"additional","affiliation":[{"name":"Tianjin University of Technology , , ,","place":["Tianjin, China, 300384"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Kai","family":"Hu","sequence":"additional","affiliation":[{"name":"Tianjin University of Technology , , ,","place":["Tianjin, China, 300384"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Haoyuan","family":"Li","sequence":"additional","affiliation":[{"name":"Tianjin University of Technology , , ,","place":["Tianjin, China, 300384"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Shifu","family":"Xiong","sequence":"additional","affiliation":[{"name":"Tianjin University of Technology , , ,","place":["Tianjin, China, 300384"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Shixing","family":"Teng","sequence":"additional","affiliation":[{"name":"Tianjin University of Technology , , ,","place":["Tianjin, China, 300384"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0009-0008-0834-9764","authenticated-orcid":true,"given":"Yuhang","family":"Wang","sequence":"additional","affiliation":[{"name":"Tianjin University of Technology , , ,","place":["Tianjin, China, 300384"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Chuanzhen","family":"Dong","sequence":"additional","affiliation":[{"name":"Tianjin University of Technology , , ,","place":["Tianjin, China, 300384"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-6210-3481","authenticated-orcid":true,"given":"Hongling","family":"Guo","sequence":"additional","affiliation":[{"name":"Tianjin University of Technology , , ,","place":["Tianjin, China, 300384"]}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"316","published-online":{"date-parts":[[2026,10,10]]},"reference":[{"issue":"12","key":"2026102208021618900_cit1","doi-asserted-by":"publisher","first-page":"5413","DOI":"10.3390\/s23125413","article-title":"Emerging Memtransistors\nfor Neuromorphic System Applications: A Review","volume":"23","author":"You","year":"2023","journal-title":"Sens."},{"issue":"2","key":"2026102208021618900_cit2","doi-asserted-by":"publisher","first-page":"2539","DOI":"10.1021\/acsami.3c13735","article-title":"Volatile Memristive\nDevices with Analog Resistance\nSwitching Based on Self-Assembled Squaraine Microtubes as Synaptic\nEmulators","volume":"16","author":"Griffin","year":"2024","journal-title":"ACS Appl. Mater. Interfaces"},{"issue":"1","key":"2026102208021618900_cit3","doi-asserted-by":"publisher","first-page":"3","DOI":"10.1186\/s40580-026-00533-5","article-title":"Gate Insulator\nStack Engineering for Fully CMOS-Compatible Reservoir Computing","volume":"13","author":"Hwang","year":"2026","journal-title":"Nano Convergence"},{"issue":"16","key":"2026102208021618900_cit4","doi-asserted-by":"publisher","first-page":"23464","DOI":"10.1021\/acsami.6c02968","article-title":"Infrared In-Sensor Computing with ReSe2 Photoelectric\nMemristor Arrays","volume":"18","author":"Sheng","year":"2026","journal-title":"ACS Appl. Mater. 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Adv."},{"issue":"32","key":"2026102208021618900_cit12","doi-asserted-by":"publisher","first-page":"2405251","DOI":"10.1002\/advs.202405251","article-title":"Multilevel\nConductance States of Vapor-transport-deposited Sb2S3 Memristors Achieved via Electrical and Optical Modulation","volume":"11","author":"Kundale","year":"2024","journal-title":"Adv. Sci."},{"issue":"1","key":"2026102208021618900_cit13","doi-asserted-by":"publisher","first-page":"131","DOI":"10.1021\/acs.jpclett.4c03367","article-title":"Exploring\nthe Conductive Dynamics of Sb2(S,Se)3-Based\nMemristors for Non-Volatile Memory and Neuromorphic Applications","volume":"16","author":"Yang","year":"2025","journal-title":"J. Phys. Chem. Lett."},{"key":"2026102208021618900_cit14","doi-asserted-by":"publisher","first-page":"139582","DOI":"10.1016\/j.matlet.2025.139582","article-title":"Electrical-Optical\nDual-Modulated Synaptic Memristor Based on Thermal Evaporated Sb2S3 Thin Film","volume":"404","author":"Zeng","year":"2026","journal-title":"Mater. Lett."},{"key":"2026102208021618900_cit15","doi-asserted-by":"publisher","first-page":"109267","DOI":"10.1016\/j.nanoen.2024.109267","article-title":"Multifunctional Optoelectronic\nMemristor Based on CeO2\/MoS2 Heterojunction\nfor Advanced Artificial Synapses\nand Bionic Visual System with Nociceptive Sensing","volume":"121","author":"Lin","year":"2024","journal-title":"Nano Energy"},{"issue":"4","key":"2026102208021618900_cit16","doi-asserted-by":"publisher","first-page":"1569","DOI":"10.1007\/s40843-022-2292-7","article-title":"Biodegradable and Flexible Artificial Nociceptor Based on Mg\/MgO\nThreshold Switching Memristor","volume":"66","author":"Cao","year":"2023","journal-title":"Sci. China Mater."},{"issue":"18","key":"2026102208021618900_cit17","doi-asserted-by":"publisher","first-page":"2410841","DOI":"10.1002\/smll.202410841","article-title":"Synergistically\nEngineered All van Der Waals GaS-WSe2 Photodiodes: Approaching\nnear-Unity Polychromatic Linearity for Multifunctional Optoelectronics","volume":"21","author":"Alam","year":"2025","journal-title":"Small"},{"key":"2026102208021618900_cit18","doi-asserted-by":"publisher","first-page":"137471","DOI":"10.1016\/j.jcis.2025.137471","article-title":"Delafossite-Embedded\nZ-Scheme Heterojunction Photocathode with Abundant Heterointerfaces\nfor Boosted Photoelectrochemical Performance","volume":"692","author":"Fu","year":"2025","journal-title":"J. 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Mater."},{"issue":"1","key":"2026102208021618900_cit24","doi-asserted-by":"publisher","first-page":"133","DOI":"10.1007\/s40820-024-01338-z","article-title":"Tailoring Classical Conditioning\nBehavior in TiO2 Nanowires: ZnO QDs-Based Optoelectronic\nMemristors for Neuromorphic Hardware","volume":"16","author":"Wang","year":"2024","journal-title":"Nano Micro\nLett."},{"issue":"1","key":"2026102208021618900_cit25","doi-asserted-by":"publisher","first-page":"161","DOI":"10.1038\/s41377-025-01773-6","article-title":"Versatile Optoelectronic Memristor Based on Wide-Bandgap\nGa2O3 for Artificial Synapses and Neuromorphic\nComputing","volume":"14","author":"Cui","year":"2025","journal-title":"Light: Sci. Appl."},{"key":"2026102208021618900_cit26","doi-asserted-by":"publisher","first-page":"2423548","DOI":"10.1002\/adfm.202423548","article-title":"A Full-Quantum-Dot Optoelectronic Memristor for In-Sensor\nReservoir Computing System with Integrated Functions","volume":"35","author":"Lin","year":"2025","journal-title":"Adv. Funct. Mater."},{"key":"2026102208021618900_cit27","doi-asserted-by":"publisher","first-page":"109102","DOI":"10.1016\/j.nanoen.2023.109102","article-title":"Operant Conditioning Reflex Implementation in a Transparent\nTa2O5-3x\/Ta2O5-x Homo-Structured\nOptoelectronic Memristor for Neuromorphic Computing Application","volume":"119","author":"Wang","year":"2024","journal-title":"Nano Energy"},{"issue":"11","key":"2026102208021618900_cit28","doi-asserted-by":"publisher","first-page":"114110","DOI":"10.1063\/1.3518514","article-title":"Multilevel\nResistive Switching in Ti\/CuxO\/Pt Memory Devices","volume":"108","author":"Wang","year":"2010","journal-title":"J. Appl. 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Interfaces"},{"issue":"2","key":"2026102208021618900_cit31","doi-asserted-by":"publisher","first-page":"163","DOI":"10.1680\/jemmr.23.00019","article-title":"Performance\nEnhancement of Sb2Se3 Solar Cell with IGZO and\nN-ZnO as Electron\nTransport Layers","volume":"13","author":"Chaudhary","year":"2024","journal-title":"Emerging Mater. Res."},{"issue":"3","key":"2026102208021618900_cit32","doi-asserted-by":"publisher","first-page":"627","DOI":"10.1002\/pssb.201147393","article-title":"Hybrid Photovoltaic Cells Based on ZnO\/Sb2S3\/P3HT Heterojunctions","volume":"249","author":"Liu","year":"2012","journal-title":"Phys. Status\nSolidi (b)"},{"key":"2026102208021618900_cit33","doi-asserted-by":"publisher","first-page":"174614","DOI":"10.1016\/j.cej.2026.174614","article-title":"Gradient Bandgap Engineered CdS Electron Transport Layers Enable\nHigh-Efficiency Antimony Sulfide Solar Cells","volume":"532","author":"Feng","year":"2026","journal-title":"Chem. Eng. J."},{"issue":"9","key":"2026102208021618900_cit34","doi-asserted-by":"publisher","first-page":"2307393","DOI":"10.1002\/adma.202307393","article-title":"Technology and Integration\nRoadmap for Optoelectronic Memristor","volume":"36","author":"Wang","year":"2024","journal-title":"Adv. Mater."},{"key":"2026102208021618900_cit35","doi-asserted-by":"publisher","first-page":"162546","DOI":"10.1016\/j.cej.2025.162546","article-title":"A Biomimetic Multi-Sensory Neural\nSystem with Visual-Auditory Synergy\nto Integration, Recognition, and Memory","volume":"512","author":"Liu","year":"2025","journal-title":"Chem.\nEng. J."},{"issue":"6","key":"2026102208021618900_cit36","doi-asserted-by":"publisher","first-page":"2300524","DOI":"10.1002\/sstr.202300524","article-title":"Lead-Free\nPerovskites\nand Metal Halides for Resistive Switching Memory and Artificial Synapse","volume":"5","author":"Zhang","year":"2024","journal-title":"Small Struct."}],"container-title":["The Journal of Physical\nChemistry Letters"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/pubs.acs.org\/doi\/pdf\/10.1021\/acs.jpclett.6c02683","content-type":"application\/pdf","content-version":"vor","intended-application":"unspecified"},{"URL":"https:\/\/pubs.acs.org\/jpclcd\/article-pdf\/17\/42\/12139\/68811194\/acs.jpclett.6c02683.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"syndication"},{"URL":"https:\/\/pubs.acs.org\/jpclcd\/article-pdf\/17\/42\/12139\/68811194\/acs.jpclett.6c02683.pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2026,10,22]],"date-time":"2026-10-22T12:29:43Z","timestamp":1792672183000},"score":1,"resource":{"primary":{"URL":"https:\/\/pubs.acs.org\/jpclcd\/article\/17\/42\/12139\/5448516\/Photogenerated-Charge-Injection-Modulated-Ultralow"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2026,10,10]]},"references-count":36,"journal-issue":{"issue":"42","published-online":{"date-parts":[[2026,10,10]]},"published-print":{"date-parts":[[2026,10,22]]}},"URL":"https:\/\/doi.org\/10.1021\/acs.jpclett.6c02683","relation":{},"ISSN":["1948-7185"],"issn-type":[{"value":"1948-7185","type":"electronic"}],"subject":[],"published":{"date-parts":[[2026,10,10]]}}}