{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,10,1]],"date-time":"2026-10-01T14:04:53Z","timestamp":1790863493717,"version":"4.1.0"},"reference-count":37,"publisher":"American Chemical Society (ACS)","issue":"39","license":[{"start":{"date-parts":[[2026,9,17]],"date-time":"2026-09-17T00:00:00Z","timestamp":1789603200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2026,9,17]],"date-time":"2026-09-17T00:00:00Z","timestamp":1789603200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"},{"start":{"date-parts":[[2026,9,17]],"date-time":"2026-09-17T00:00:00Z","timestamp":1789603200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-045"}],"funder":[{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["12447116"],"award-info":[{"award-number":["12447116"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100005145","name":"Basic Research Program of Jiangsu Province","doi-asserted-by":"publisher","award":["BK 20250899"],"award-info":[{"award-number":["BK 20250899"]}],"id":[{"id":"10.13039\/501100005145","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100005374","name":"Nanjing University of Posts and Telecommunications","doi-asserted-by":"publisher","award":["NY226013"],"award-info":[{"award-number":["NY226013"]}],"id":[{"id":"10.13039\/501100005374","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2026,10,1]]},"abstract":"<jats:title>Abstract<\/jats:title>\n                  <jats:p>Two-dimensional (2D) semiconductors are commonly evaluated for ultrascaled transistors using band-edge descriptors such as carrier effective mass. Here, first-principles quantum-transport simulations reveal pronounced electron-hole transport asymmetry in monolayer PbS MOSFETs despite their similarly small electron and hole effective masses (&amp;lt;0.23 m0). At a gate length of 9 nm, the n-type PbS MOSFET achieves an ultrahigh on-state current exceeding 7300 \u03bcA\/\u03bcm along the x direction, over 5500 \u03bcA\/\u03bcm higher than that of the p-type device. Position-resolved local density of states and spectral-current analyses reveal that the suppressed hole current originates from a broad low-DOS region within the valence-band transport window, which reduces hole injection. These results demonstrate that transistor performance cannot be fully predicted by band-edge effective mass alone, but is strongly governed by the electronic-state distribution within the transport window. At sub-5 nm gate lengths, enhanced source-to-drain tunneling leads to severe short-channel effects, which can be effectively mitigated through optimized underlap configurations. This work establishes monolayer PbS as a promising channel material for ultrascaled electronics and highlights the importance of beyond-band-edge electronic-structure considerations for evaluating and designing 2D semiconductor transistors.<\/jats:p>","DOI":"10.1021\/acs.jpclett.6c02710","type":"journal-article","created":{"date-parts":[[2026,9,17]],"date-time":"2026-09-17T07:02:37Z","timestamp":1789628557000},"page":"11129-11135","source":"Crossref","is-referenced-by-count":0,"title":["Beyond Band-Edge\nEffective Mass: Ultrahigh On-State\nCurrent and Electron-Hole Transport Asymmetry in Monolayer PbS MOSFETs"],"prefix":"10.1021","volume":"17","author":[{"ORCID":"https:\/\/orcid.org\/0000-0002-7772-7190","authenticated-orcid":true,"given":"Shiying","family":"Guo","sequence":"first","affiliation":[{"name":"Yangzhou University , , ,","place":["Yangzhou, China, 225002"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Mengke","family":"Xie","sequence":"additional","affiliation":[{"name":"Yangzhou University , , ,","place":["Yangzhou, China, 225002"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Haocheng","family":"Xu","sequence":"additional","affiliation":[{"name":"Yangzhou University , , ,","place":["Yangzhou, China, 225002"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"ChengXu","family":"Ge","sequence":"additional","affiliation":[{"name":"Yangzhou University , , ,","place":["Yangzhou, China, 225002"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Hengze","family":"Qu","sequence":"additional","affiliation":[{"name":"Nanjing University of Posts and Telecommunications , , ,","place":["Nanjing, China, 210023"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Jingguo","family":"Hu","sequence":"additional","affiliation":[{"name":"Yangzhou University , , ,","place":["Yangzhou, China, 225002"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-4981-231X","authenticated-orcid":true,"given":"Shengli","family":"Zhang","sequence":"additional","affiliation":[{"name":"Nanjing University of Science and Technology , , ,","place":["Nanjing, China, 210094"]}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"316","published-online":{"date-parts":[[2026,9,17]]},"reference":[{"issue":"7974","key":"2026100109091747900_cit1","doi-asserted-by":"publisher","first-page":"501","DOI":"10.1038\/s41586-023-06145-x","article-title":"The future transistors","volume":"620","author":"Cao","year":"2023","journal-title":"Nature"},{"issue":"7858","key":"2026100109091747900_cit2","doi-asserted-by":"publisher","first-page":"211","DOI":"10.1038\/s41586-021-03472-9","article-title":"Ultralow contact resistance between\nsemimetal and monolayer semiconductors","volume":"593","author":"Shen","year":"2021","journal-title":"Nature"},{"issue":"7775","key":"2026100109091747900_cit3","doi-asserted-by":"publisher","first-page":"507","DOI":"10.1038\/s41586-019-1573-9","article-title":"Graphene and\ntwo-dimensional materials for silicon technology","volume":"573","author":"Akinwande","year":"2019","journal-title":"Nature"},{"issue":"7943","key":"2026100109091747900_cit4","doi-asserted-by":"publisher","first-page":"274","DOI":"10.1038\/s41586-022-05431-4","article-title":"Approaching the quantum\nlimit in two-dimensional semiconductor contacts","volume":"613","author":"Li","year":"2023","journal-title":"Nature"},{"issue":"7","key":"2026100109091747900_cit5","doi-asserted-by":"publisher","first-page":"895","DOI":"10.1038\/s41565-024-01695-1","article-title":"The future of two-dimensional semiconductors\nbeyond Moore\u2019s law","volume":"19","author":"Kim","year":"2024","journal-title":"Nat. Nanotechnol."},{"issue":"7848","key":"2026100109091747900_cit6","doi-asserted-by":"publisher","first-page":"43","DOI":"10.1038\/s41586-021-03339-z","article-title":"Promises and\nprospects of two-dimensional transistors","volume":"591","author":"Liu","year":"2021","journal-title":"Nature"},{"issue":"11","key":"2026100109091747900_cit7","doi-asserted-by":"publisher","first-page":"16052","DOI":"10.1038\/natrevmats.2016.52","article-title":"Two-dimensional semiconductors for\ntransistors","volume":"1","author":"Chhowalla","year":"2016","journal-title":"Nat. Rev. Mater."},{"issue":"3","key":"2026100109091747900_cit8","doi-asserted-by":"publisher","first-page":"147","DOI":"10.1038\/nnano.2010.279","article-title":"Single-layer MoS2 transistors","volume":"6","author":"Radisavljevic","year":"2011","journal-title":"Nat.\nNanotechnol."},{"issue":"12","key":"2026100109091747900_cit9","doi-asserted-by":"publisher","first-page":"7798","DOI":"10.1021\/acs.nanolett.6b03999","article-title":"MoS2 field-effect transistor with sub-10\nnm channel length","volume":"16","author":"Nourbakhsh","year":"2016","journal-title":"Nano Lett."},{"issue":"18","key":"2026100109091747900_cit10","doi-asserted-by":"publisher","first-page":"20633","DOI":"10.1021\/acsami.0c01750","article-title":"Performance limit of monolayer WSe2 transistors; Significantly outperform their MoS2 counterpart","volume":"12","author":"Sun","year":"2020","journal-title":"ACS Appl. Mater. Interfaces"},{"issue":"11","key":"2026100109091747900_cit11","doi-asserted-by":"publisher","first-page":"3871","DOI":"10.1109\/TED.2014.2353213","article-title":"Ballistic\ntransport in monolayer black phosphorus transistors","volume":"61","author":"Liu","year":"2014","journal-title":"IEEE Trans. Electron Devices"},{"issue":"5","key":"2026100109091747900_cit12","doi-asserted-by":"publisher","first-page":"372","DOI":"10.1038\/nnano.2014.35","article-title":"Black phosphorus\nfield-effect transistors","volume":"9","author":"Li","year":"2014","journal-title":"Nat. Nanotechnol."},{"issue":"4","key":"2026100109091747900_cit13","doi-asserted-by":"publisher","first-page":"626","DOI":"10.1109\/LED.2018.2804388","article-title":"First-principles simulations\nof FETs based on two-dimensional InSe","volume":"39","author":"Marin","year":"2018","journal-title":"IEEE\nElectron Device Lett."},{"issue":"7957","key":"2026100109091747900_cit14","doi-asserted-by":"publisher","first-page":"470","DOI":"10.1038\/s41586-023-05819-w","article-title":"Ballistic two-dimensional InSe transistors","volume":"616","author":"Jiang","year":"2023","journal-title":"Nature"},{"issue":"1","key":"2026100109091747900_cit15","doi-asserted-by":"publisher","first-page":"406","DOI":"10.1109\/TED.2021.3130834","article-title":"Two-dimensional\nMoSi2N4: An excellent 2-D semiconductor for\nfield-effect transistors","volume":"69","author":"Nandan","year":"2022","journal-title":"IEEE Trans. Electron\nDevices"},{"issue":"9","key":"2026100109091747900_cit16","doi-asserted-by":"publisher","first-page":"1492","DOI":"10.1109\/LED.2023.3294593","article-title":"Two-dimensional MSi2N4 heterostructure p-type transistors with sub-thermionic transport\nperformances","volume":"44","author":"Qu","year":"2023","journal-title":"IEEE Electron Device Lett."},{"issue":"6","key":"2026100109091747900_cit17","doi-asserted-by":"publisher","first-page":"064010","DOI":"10.1103\/PhysRevApplied.17.064010","article-title":"High-performance and low-power transistors\nbased on anisotropic monolayer \u03b2-TeO2","volume":"17","author":"Guo","year":"2022","journal-title":"Phys. Rev. Appl."},{"issue":"5","key":"2026100109091747900_cit18","doi-asserted-by":"publisher","first-page":"2065","DOI":"10.1021\/acsmaterialslett.4c00296","article-title":"Suppressing thermal\ntail by Dirac\nstates and high density of states in two-dimensional Ag2S toward low-power electronics","volume":"6","author":"Chen","year":"2024","journal-title":"ACS Mater.\nLett."},{"issue":"10","key":"2026100109091747900_cit19","doi-asserted-by":"publisher","first-page":"1427","DOI":"10.1016\/j.scib.2024.03.017","article-title":"Identifying\natomically thin isolated-band channels for intrinsic steep-slope transistors\nby high-throughput study","volume":"69","author":"Qu","year":"2024","journal-title":"Sci. Bull."},{"issue":"4","key":"2026100109091747900_cit20","doi-asserted-by":"publisher","first-page":"2327","DOI":"10.1109\/TED.2026.3660992","article-title":"Halogen-induced\ns-band isolation in 2-D InSeX (X = Cl, Br) for breaking the Boltzmann\nlimitation in MOSFETs","volume":"73","author":"Tai","year":"2026","journal-title":"IEEE Trans. Electron\nDevices"},{"issue":"4","key":"2026100109091747900_cit21","doi-asserted-by":"publisher","first-page":"042103","DOI":"10.1063\/1.4891230","article-title":"Computational prediction of two-dimensional\ngroup-IV\nmono-chalcogenides","volume":"105","author":"Singh","year":"2014","journal-title":"Appl. Phys. Lett."},{"issue":"2","key":"2026100109091747900_cit22","doi-asserted-by":"publisher","first-page":"024107","DOI":"10.1103\/PhysRevB.103.024107","article-title":"Metastable\npiezoelectric group-IV monochalcogenide\nmonolayers with a buckled honeycomb structure","volume":"103","author":"Poudel","year":"2021","journal-title":"Phys. Rev. B"},{"issue":"1","key":"2026100109091747900_cit23","doi-asserted-by":"publisher","first-page":"015901","DOI":"10.1088\/1361-648X\/ab4007","article-title":"QuantumATK: an integrated platform of electronic and\natomic-scale modelling tools","volume":"32","author":"Smidstrup","year":"2020","journal-title":"J. Phys-Condens.\nMater."},{"issue":"18","key":"2026100109091747900_cit24","doi-asserted-by":"publisher","first-page":"3865","DOI":"10.1103\/PhysRevLett.77.3865","article-title":"Generalized gradient approximation\nmade simple","volume":"77","author":"Perdew","year":"1996","journal-title":"Phys. Rev. Lett."},{"issue":"12","key":"2026100109091747900_cit25","doi-asserted-by":"publisher","first-page":"5188","DOI":"10.1103\/PhysRevB.13.5188","article-title":"Special points for Brillouin-zone integrations","volume":"13","author":"Monkhorst","year":"1976","journal-title":"Phys. Rev. B"},{"issue":"16","key":"2026100109091747900_cit26","doi-asserted-by":"publisher","first-page":"165401","DOI":"10.1103\/PhysRevB.65.165401","article-title":"Density-functional\nmethod for nonequilibrium electron transport","volume":"65","author":"Brandbyge","year":"2002","journal-title":"Phys. Rev. B"},{"issue":"10","key":"2026100109091747900_cit27","doi-asserted-by":"publisher","first-page":"6207","DOI":"10.1103\/PhysRevB.31.6207","article-title":"Generalized many-channel\nconductance formula with application to small rings","volume":"31","author":"Bu\u0308ttiker","year":"1985","journal-title":"Phys. Rev. B"},{"key":"2026100109091747900_cit28","volume-title":"International technology roadmap for semiconductors","year":"2013"},{"issue":"44","key":"2026100109091747900_cit29","doi-asserted-by":"publisher","first-page":"11035","DOI":"10.1021\/acs.jpclett.4c02694","article-title":"Two-dimensional\nZrS2 and HfS2 for making sub-10 nm high-performance\np-type transistors","volume":"15","author":"Hu","year":"2024","journal-title":"J. Phys. Chem. Lett."},{"issue":"5","key":"2026100109091747900_cit30","doi-asserted-by":"publisher","first-page":"054016","DOI":"10.1103\/PhysRevApplied.21.054016","article-title":"Theoretical\ndissection of the electronic\nanisotropy and quantum transport of ultrascaled halogenated borophene\nMOSFETs","volume":"21","author":"Guo","year":"2024","journal-title":"Phys. Rev. Appl."},{"issue":"2","key":"2026100109091747900_cit31","doi-asserted-by":"publisher","first-page":"532","DOI":"10.1039\/C8NR08852G","article-title":"High-performance\nsub-10 nm monolayer Bi2O2Se\ntransistors","volume":"11","author":"Quhe","year":"2019","journal-title":"Nanoscale"},{"issue":"3","key":"2026100109091747900_cit32","doi-asserted-by":"publisher","first-page":"1151","DOI":"10.1021\/acsaelm.0c01019","article-title":"High-Performance Ballistic\nQuantum Transport of Sub-10 nm Monolayer\nGeS Field-Effect Transistors","volume":"3","author":"Ding","year":"2021","journal-title":"ACS Appl. Electron.\nMater."},{"issue":"27","key":"2026100109091747900_cit33","doi-asserted-by":"publisher","first-page":"23344","DOI":"10.1021\/acsami.8b06427","article-title":"Many-body effect and device performance limit of monolayer\nInSe","volume":"10","author":"Wang","year":"2018","journal-title":"ACS Appl. Mater. Interfaces"},{"issue":"4","key":"2026100109091747900_cit34","doi-asserted-by":"publisher","first-page":"1560","DOI":"10.1021\/acsaelm.0c00840","article-title":"Sub-5 nm Monolayer MoS2 Transistors\ntoward Low-Power Devices","volume":"3","author":"Zhang","year":"2021","journal-title":"ACS Appl. Electron.\nMater."},{"issue":"41","key":"2026100109091747900_cit35","doi-asserted-by":"publisher","first-page":"14683","DOI":"10.1039\/D1TC02937A","article-title":"Performance limit of\nmonolayer MoSi2N4 transistors","volume":"9","author":"Sun","year":"2021","journal-title":"J. Mater. Chem. C"},{"issue":"6","key":"2026100109091747900_cit36","doi-asserted-by":"publisher","first-page":"064044","DOI":"10.1103\/PhysRevApplied.20.064044","article-title":"Monolayer WSi2N4: A promising\nchannel material\nfor sub-5-nm-gate homogeneous CMOS devices","volume":"20","author":"Li","year":"2023","journal-title":"Phys. Rev. Appl."},{"issue":"4","key":"2026100109091747900_cit37","doi-asserted-by":"publisher","first-page":"044031","DOI":"10.1103\/PhysRevApplied.14.044031","article-title":"Ultrascaled\ndouble-gate monolayer SnS2 MOSFETs for high-performance\nand low-power applications","volume":"14","author":"Guo","year":"2020","journal-title":"Phys. Rev. Appl."}],"container-title":["The Journal of Physical\nChemistry Letters"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/pubs.acs.org\/doi\/pdf\/10.1021\/acs.jpclett.6c02710","content-type":"application\/pdf","content-version":"vor","intended-application":"unspecified"},{"URL":"https:\/\/pubs.acs.org\/jpclcd\/article-pdf\/17\/39\/11129\/68539653\/acs.jpclett.6c02710.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"syndication"},{"URL":"https:\/\/pubs.acs.org\/jpclcd\/article-pdf\/17\/39\/11129\/68539653\/acs.jpclett.6c02710.pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2026,10,1]],"date-time":"2026-10-01T13:28:46Z","timestamp":1790861326000},"score":1,"resource":{"primary":{"URL":"https:\/\/pubs.acs.org\/jpclcd\/article\/17\/39\/11129\/5431774\/Beyond-Band-Edge-Effective-Mass-Ultrahigh-On-State"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2026,9,17]]},"references-count":37,"journal-issue":{"issue":"39","published-online":{"date-parts":[[2026,9,17]]},"published-print":{"date-parts":[[2026,10,1]]}},"URL":"https:\/\/doi.org\/10.1021\/acs.jpclett.6c02710","relation":{},"ISSN":["1948-7185"],"issn-type":[{"value":"1948-7185","type":"electronic"}],"subject":[],"published":{"date-parts":[[2026,9,17]]}}}