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Here, ferromagnetic monolayer CrSBr with bromine vacancies is used to reveal how intrinsic defects couple nonradiative recombination to spin depolarization. Time-dependent density functional theory combined with nonadiabatic molecular dynamics including noncollinear spin shows that bromine vacancy introduces a localized, spin-polarized in-gap hole-trap state that reconstructs the recombination pathway. Unlike direct interband recombination in pristine CrSBr, the defective system follows a two-step mechanism involving hole trapping and subsequent fast defect-assisted recombination, shortening the carrier lifetime from \u223c1.38 ns to \u223c0.20 ns. The characteristic time for the decay of the population-weighted spin-polarization is correspondingly shortened, showing that the loss of spin polarization is closely coupled to defect-mediated charge relaxation. These results establish a microscopic link among defect localization, carrier recombination, and spin-polarization decay in two-dimensional magnetic semiconductors.<\/jats:p>","DOI":"10.1021\/acs.jpclett.6c02787","type":"journal-article","created":{"date-parts":[[2026,9,23]],"date-time":"2026-09-23T14:01:45Z","timestamp":1790172105000},"page":"11338-11345","source":"Crossref","is-referenced-by-count":0,"title":["Defect-Assisted\nRecombination Accelerates Spin Depolarization\nin Monolayer CrSBr"],"prefix":"10.1021","volume":"17","author":[{"given":"Chenxi","family":"Ma","sequence":"first","affiliation":[{"name":"Beijing Normal University , , ,","place":["Beijing, People\u2019s Republic of China, 100875"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Haoran","family":"Lu","sequence":"additional","affiliation":[{"name":"Beijing Normal University , , ,","place":["Beijing, People\u2019s Republic of China, 100875"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-2978-8650","authenticated-orcid":true,"given":"Andrey S.","family":"Vasenko","sequence":"additional","affiliation":[{"name":"HSE University , ,","place":["Moscow, Russia, 101000"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Evgueni V.","family":"Chulkov","sequence":"additional","affiliation":[{"name":"CentroMixtoCSIC-UPV\/EHU , , , ,","place":["San Sebastia\u0301n, Euskadi, Spain, 20018"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Dadong","family":"Yan","sequence":"additional","affiliation":[{"name":"Zhejiang University , , ,","place":["HangZhou, People\u2019s Republic of China, 310058"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-3912-8899","authenticated-orcid":true,"given":"Run","family":"Long","sequence":"additional","affiliation":[{"name":"Beijing Normal University , , ,","place":["Beijing, People\u2019s Republic of China, 100875"]}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"316","published-online":{"date-parts":[[2026,9,23]]},"reference":[{"key":"2026100811160697700_cit1","doi-asserted-by":"publisher","DOI":"10.1088\/2053-1583\/3\/2\/022002","article-title":"Defect Engineering\nof Two-Dimensional Transition Metal Dichalcogenides","volume":"3","author":"Lin","year":"2016","journal-title":"2D Mater."},{"key":"2026100811160697700_cit2","doi-asserted-by":"publisher","first-page":"4641739","DOI":"10.34133\/2019\/4641739","article-title":"Defect Engineering\nin 2D Materials: Precise Manipulation and Improved Functionalities","volume":"2019","author":"Jiang","year":"2019","journal-title":"Research"},{"key":"2026100811160697700_cit3","doi-asserted-by":"publisher","first-page":"391","DOI":"10.1038\/nnano.2014.64","article-title":"Atomic Mechanism of\nthe Semiconducting-to-Metallic Phase Transition in Single-Layered\nMoS2","volume":"9","author":"Lin","year":"2014","journal-title":"Nat. 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