{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,10,23]],"date-time":"2026-10-23T19:44:48Z","timestamp":1792784688876,"version":"4.5.0"},"reference-count":40,"publisher":"American Chemical Society (ACS)","issue":"41","license":[{"start":{"date-parts":[[2026,10,1]],"date-time":"2026-10-01T00:00:00Z","timestamp":1790812800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2026,10,1]],"date-time":"2026-10-01T00:00:00Z","timestamp":1790812800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"},{"start":{"date-parts":[[2026,10,1]],"date-time":"2026-10-01T00:00:00Z","timestamp":1790812800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-045"}],"funder":[{"DOI":"10.13039\/100012905","name":"Department of Science and Technology of Shandong Province","doi-asserted-by":"publisher","award":["ZR2025QC1936Z"],"award-info":[{"award-number":["ZR2025QC1936Z"]}],"id":[{"id":"10.13039\/100012905","id-type":"DOI","asserted-by":"publisher"}]},{"name":"National Natural Science Foundation of China (NSFC)","award":["12504140"],"award-info":[{"award-number":["12504140"]}],"id":[{"id":"https:\/\/ror.org\/01h0zpd94","id-type":"ROR","asserted-by":"crossref"}]},{"name":"National Natural Science Foundation of China (NSFC)","award":["62674131"],"award-info":[{"award-number":["62674131"]}],"id":[{"id":"https:\/\/ror.org\/01h0zpd94","id-type":"ROR","asserted-by":"crossref"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2026,10,15]]},"abstract":"<jats:title>Abstract<\/jats:title>\n                  <jats:p>Metal oxide optoelectronic synapses are promising for neuromorphic vision, but combining a low dark current with sustained photoinduced plasticity remains challenging. Here, Al stoichiometry is engineered in electrospun In1AlxZn0.08O (x = 0.007, 0.011, and 0.015) nanofiber networks to tune sub-bandgap defects, carrier transport, and photocarrier relaxation. Optical, spectroscopic, electrical, and synaptic measurements identify 1.1 atomic % Al as optimal. Strong Al\u2013O bonding suppresses excess oxygen-vacancy-related donor states while preserving the In 5s transport network. The optimized device shows an off-state current of 10\u201311 A, an on\/off ratio of 107, a field-effect mobility of 14 cm2 V\u20131 s\u20131, and a paired-pulse facilitation index of 271%. Under pulsed UV light, defect-assisted trapping and slow relaxation retain 30% of the peak photocurrent after 2 h. Neural network simulations achieve 95.7% handwritten digit recognition accuracy, highlighting the value of cation stoichiometry control for low-power optoelectronic neuromorphic computing.<\/jats:p>","DOI":"10.1021\/acs.jpclett.6c02945","type":"journal-article","created":{"date-parts":[[2026,10,1]],"date-time":"2026-10-01T12:01:26Z","timestamp":1790856086000},"page":"11822-11828","source":"Crossref","is-referenced-by-count":0,"title":["Al-Stoichiometry-Engineered\nDefect Profiles in InAlZnO\nNanofibers for Balanced Charge Transport and Optical Plasticity"],"prefix":"10.1021","volume":"17","author":[{"given":"Xudong","family":"Zhang","sequence":"first","affiliation":[{"name":"Qingdao University , , ,","place":["Qingdao, China, 266071"]},{"name":"Chinese Academy of Sciences , , ,","place":["Fuzhou, China, 350002"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Xiangze","family":"Wang","sequence":"additional","affiliation":[{"name":"Qingdao University , , ,","place":["Qingdao, China, 266071"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Xianglong","family":"Wang","sequence":"additional","affiliation":[{"name":"Qingdao University , , ,","place":["Qingdao, China, 266071"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Xiaoyang","family":"Song","sequence":"additional","affiliation":[{"name":"Qingdao University , , ,","place":["Qingdao, China, 266071"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Haiyang","family":"Yu","sequence":"additional","affiliation":[{"name":"Qingdao University , , ,","place":["Qingdao, China, 266071"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Hengzhen","family":"Zhang","sequence":"additional","affiliation":[{"name":"Qingdao University , , ,","place":["Qingdao, China, 266071"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Ruxin","family":"Xue","sequence":"additional","affiliation":[{"name":"Qingdao University , , ,","place":["Qingdao, China, 266071"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Zhen","family":"Liu","sequence":"additional","affiliation":[{"name":"Qingdao University , , ,","place":["Qingdao, China, 266071"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Yuanbin","family":"Qin","sequence":"additional","affiliation":[{"name":"Xi\u2019an Jiaotong University , , ,","place":["Xi\u2019an, China, 710000"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-5558-423X","authenticated-orcid":true,"given":"Fengyun","family":"Wang","sequence":"additional","affiliation":[{"name":"Qingdao University , , ,","place":["Qingdao, China, 266071"]}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"316","published-online":{"date-parts":[[2026,10,1]]},"reference":[{"key":"2026101508211024600_cit1","doi-asserted-by":"publisher","first-page":"556","DOI":"10.1021\/acs.jpclett.3c02898","article-title":"Ga2O3 Bipolar Heterojunction-Based Optoelectronic\nSynapse Array with Visual Attention","volume":"15","author":"Xu","year":"2024","journal-title":"J. Phys.\nChem. Lett."},{"key":"2026101508211024600_cit2","doi-asserted-by":"publisher","first-page":"517","DOI":"10.1038\/s41565-020-0647-z","article-title":"Neuromorphic Nanoelectronic Materials","volume":"15","author":"Sangwan","year":"2020","journal-title":"Nat. Nanotechnol."},{"key":"2026101508211024600_cit3","doi-asserted-by":"publisher","first-page":"102","DOI":"10.1038\/s41566-020-00754-y","article-title":"Photonics\nfor Artificial Intelligence\nand Neuromorphic Computing","volume":"15","author":"Shastri","year":"2021","journal-title":"Nat. Photonics"},{"key":"2026101508211024600_cit4","doi-asserted-by":"publisher","first-page":"499","DOI":"10.1038\/s42254-020-0208-2","article-title":"Physics for Neuromorphic\nComputing","volume":"2","author":"Markovic","year":"2020","journal-title":"Nat. Rev. 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Mater."},{"key":"2026101508211024600_cit11","doi-asserted-by":"publisher","first-page":"6444","DOI":"10.1021\/acs.chemmater.0c01672","article-title":"The Role of Cation\nCoordination in the Electrical and Optical Properties of Amorphous\nTransparent Conducting Oxides","volume":"32","author":"Husein","year":"2020","journal-title":"Chem. Mater."},{"key":"2026101508211024600_cit12","doi-asserted-by":"publisher","first-page":"5119","DOI":"10.1021\/cm9020113","article-title":"Interplay\nbetween Order and Disorder\nin the High Performance of Amorphous Transparent Conducting Oxides","volume":"21","author":"Walsh","year":"2009","journal-title":"Chem. Mater."},{"key":"2026101508211024600_cit13","doi-asserted-by":"publisher","first-page":"800","DOI":"10.1038\/s41928-021-00671-0","article-title":"Mobility-Stability Trade-Off in Oxide Thin-Film Transistors","volume":"4","author":"Shiah","year":"2021","journal-title":"Nat. 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Fiber Mater."},{"key":"2026101508211024600_cit16","doi-asserted-by":"publisher","first-page":"7098","DOI":"10.1039\/D3TC01026K","article-title":"Long-Memory Retention\nand Self-Powered\nUltraviolet Artificial Synapses Realized by Multi-Cation Metal Oxide\nSemiconductors","volume":"11","author":"Zheng","year":"2023","journal-title":"J. Mater. Chem. C"},{"key":"2026101508211024600_cit17","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevMaterials.3.074604","article-title":"Role of Point Defects\nin the Electrical and Optical Properties of In2O3","volume":"3","author":"Chatratin","year":"2019","journal-title":"Phys. Rev. Mater."},{"key":"2026101508211024600_cit18","doi-asserted-by":"publisher","DOI":"10.1088\/0034-4885\/72\/12\/126501","article-title":"Fundamentals\nof Zinc Oxide as a Semiconductor","volume":"72","author":"Janotti","year":"2009","journal-title":"Rep. Prog.\nPhys."},{"key":"2026101508211024600_cit19","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevResearch.2.033358","article-title":"Ultrabroadband\nDensity of States of Amorphous In-Ga-Zn-O","volume":"2","author":"Vogt","year":"2020","journal-title":"Phys.\nRev. Res."},{"key":"2026101508211024600_cit20","doi-asserted-by":"publisher","first-page":"2570","DOI":"10.1021\/acsaelm.2c00326","article-title":"Enhanced Artificial Synaptic Properties Enabled by\nArrays of Electrolyte-Gated Electrospun InZnO Nanowires","volume":"4","author":"Chang","year":"2022","journal-title":"ACS Appl. Electron. Mater."},{"key":"2026101508211024600_cit21","doi-asserted-by":"publisher","first-page":"5106","DOI":"10.1038\/s41467-018-07572-5","article-title":"Artificial\nOptic-Neural Synapse for Colored and Color-Mixed\nPattern Recognition","volume":"9","author":"Seo","year":"2018","journal-title":"Nat. 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Lett."},{"key":"2026101508211024600_cit25","doi-asserted-by":"publisher","DOI":"10.1002\/adfm.202402222","article-title":"Oxide Based\nPentachromatic-Vision Inspired Optoelectronic Synaptic Transistor\nwith Large Conduction States Over 512","volume":"34","author":"Jeong","year":"2024","journal-title":"Adv.\nFunct. Mater."},{"key":"2026101508211024600_cit26","doi-asserted-by":"publisher","DOI":"10.1063\/1.2053360","article-title":"Oxygen Vacancies in ZnO","volume":"87","author":"Janotti","year":"2005","journal-title":"Appl.\nPhys. Lett."},{"key":"2026101508211024600_cit27","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.72.035215","article-title":"Anion Vacancies as\na Source of Persistent Photoconductivity\nin II-VI and Chalcopyrite Semiconductors","volume":"72","author":"Lany","year":"2005","journal-title":"Phys.\nRev. B"},{"key":"2026101508211024600_cit28","doi-asserted-by":"publisher","first-page":"301","DOI":"10.1038\/nmat3256","article-title":"Gated Three-Terminal Device Architecture to Eliminate Persistent\nPhotoconductivity in Oxide Semiconductor Photosensor Arrays","volume":"11","author":"Jeon","year":"2012","journal-title":"Nat. Mater."},{"key":"2026101508211024600_cit29","doi-asserted-by":"publisher","DOI":"10.1002\/adfm.202510479","article-title":"Interlayer Exciton Polarons in Mesoscopic V2O5 for Broadband Optoelectronic Synapses","volume":"36","author":"Phan","year":"2026","journal-title":"Adv.\nFunct. Mater."},{"key":"2026101508211024600_cit30","doi-asserted-by":"publisher","first-page":"89","DOI":"10.1080\/23746149.2016.1259585","article-title":"Neuromorphic Computing Using Non-Volatile Memory","volume":"2","author":"Burr","year":"2017","journal-title":"Adv. Phys. X"},{"key":"2026101508211024600_cit31","doi-asserted-by":"publisher","first-page":"61","DOI":"10.1038\/nature14441","article-title":"Training and Operation of an Integrated\nNeuromorphic\nNetwork Based on Metal-Oxide Memristors","volume":"521","author":"Prezioso","year":"2015","journal-title":"Nature"},{"key":"2026101508211024600_cit32","doi-asserted-by":"publisher","first-page":"529","DOI":"10.1038\/s41565-020-0655-z","article-title":"Memory Devices\nand Applications for In-Memory Computing","volume":"15","author":"Sebastian","year":"2020","journal-title":"Nat.\nNanotechnol."},{"key":"2026101508211024600_cit33","doi-asserted-by":"publisher","first-page":"3211","DOI":"10.1038\/s41467-020-16985-0","article-title":"Optogenetics Inspired Transition Metal\nDichalcogenide Neuristors for In-Memory Deep Recurrent Neural Networks","volume":"11","author":"John","year":"2020","journal-title":"Nat. Commun."},{"key":"2026101508211024600_cit34","doi-asserted-by":"publisher","first-page":"10","DOI":"10.1038\/s43588-021-00184-y","article-title":"Opportunities for Neuromorphic\nComputing Algorithms and Applications","volume":"2","author":"Schuman","year":"2022","journal-title":"Nat.\nComput. Sci."},{"key":"2026101508211024600_cit35","doi-asserted-by":"publisher","first-page":"333","DOI":"10.1038\/s41928-018-0092-2","article-title":"In-Memory Computing with Resistive Switching Devices","volume":"1","author":"Ielmini","year":"2018","journal-title":"Nat. Electron."},{"key":"2026101508211024600_cit36","doi-asserted-by":"publisher","first-page":"60","DOI":"10.1038\/s41586-018-0180-5","article-title":"Equivalent-Accuracy\nAccelerated Neural-Network\nTraining Using Analogue Memory","volume":"558","author":"Ambrogio","year":"2018","journal-title":"Nature"},{"key":"2026101508211024600_cit37","doi-asserted-by":"publisher","first-page":"11182","DOI":"10.1021\/acs.jpclett.4c02548","article-title":"Synaptic Properties\nof an Interfacial Memristor Based on a Ga2O3\/Nb:SrTiO3 Heterojunction","volume":"15","author":"Wang","year":"2024","journal-title":"J. Phys.\nChem. Lett."},{"key":"2026101508211024600_cit38","doi-asserted-by":"publisher","first-page":"62","DOI":"10.1038\/s41586-020-2038-x","article-title":"Ultrafast Machine Vision with 2D\nMaterial Neural Network Image Sensors","volume":"579","author":"Mennel","year":"2020","journal-title":"Nature"},{"key":"2026101508211024600_cit39","doi-asserted-by":"publisher","first-page":"8670","DOI":"10.1021\/acs.jpclett.6c01918","article-title":"Perovskite Nanocrystal\/InGaZnO\nHeterojunction Enabling an All-Optically Controlled Artificial Synapse\nfor Motion Detection","volume":"17","author":"Wang","year":"2026","journal-title":"J. Phys. Chem. Lett."},{"key":"2026101508211024600_cit40","doi-asserted-by":"publisher","DOI":"10.1002\/adfm.202518534","article-title":"A Flexible Artificial\nOptical Synapse with Photo-Gating Based on a Heterojunction Channel\nof Reduced Graphene Oxide and ZnO Nanorods","volume":"36","author":"Bag","year":"2026","journal-title":"Adv. Funct. Mater."}],"container-title":["The Journal of Physical\nChemistry Letters"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/pubs.acs.org\/doi\/pdf\/10.1021\/acs.jpclett.6c02945","content-type":"application\/pdf","content-version":"vor","intended-application":"unspecified"},{"URL":"https:\/\/pubs.acs.org\/jpclcd\/article-pdf\/17\/41\/11822\/68723519\/acs.jpclett.6c02945.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"syndication"},{"URL":"https:\/\/pubs.acs.org\/jpclcd\/article-pdf\/17\/41\/11822\/68723519\/acs.jpclett.6c02945.pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2026,10,15]],"date-time":"2026-10-15T12:31:39Z","timestamp":1792067499000},"score":1,"resource":{"primary":{"URL":"https:\/\/pubs.acs.org\/jpclcd\/article\/17\/41\/11822\/5443203\/Al-Stoichiometry-Engineered-Defect-Profiles-in"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2026,10,1]]},"references-count":40,"journal-issue":{"issue":"41","published-online":{"date-parts":[[2026,10,1]]},"published-print":{"date-parts":[[2026,10,15]]}},"URL":"https:\/\/doi.org\/10.1021\/acs.jpclett.6c02945","relation":{},"ISSN":["1948-7185"],"issn-type":[{"value":"1948-7185","type":"electronic"}],"subject":[],"published":{"date-parts":[[2026,10,1]]}}}