{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,10,23]],"date-time":"2026-10-23T19:44:00Z","timestamp":1792784640196,"version":"4.5.0"},"reference-count":34,"publisher":"American Chemical Society (ACS)","issue":"41","license":[{"start":{"date-parts":[[2026,10,3]],"date-time":"2026-10-03T00:00:00Z","timestamp":1790985600000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2026,10,3]],"date-time":"2026-10-03T00:00:00Z","timestamp":1790985600000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"},{"start":{"date-parts":[[2026,10,3]],"date-time":"2026-10-03T00:00:00Z","timestamp":1790985600000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-045"}],"funder":[{"DOI":"10.13039\/501100002858","name":"China Postdoctoral Science Foundation","doi-asserted-by":"publisher","award":["2023M731047"],"award-info":[{"award-number":["2023M731047"]}],"id":[{"id":"10.13039\/501100002858","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100002858","name":"China Postdoctoral Science Foundation","doi-asserted-by":"publisher","award":["2024T170259"],"award-info":[{"award-number":["2024T170259"]}],"id":[{"id":"10.13039\/501100002858","id-type":"DOI","asserted-by":"publisher"}]},{"name":"National Natural Science Foundation of China (NSFC)","award":["62404076"],"award-info":[{"award-number":["62404076"]}],"id":[{"id":"https:\/\/ror.org\/01h0zpd94","id-type":"ROR","asserted-by":"crossref"}]},{"name":"National Natural Science Foundation of China (NSFC)","award":["62404078"],"award-info":[{"award-number":["62404078"]}],"id":[{"id":"https:\/\/ror.org\/01h0zpd94","id-type":"ROR","asserted-by":"crossref"}]},{"name":"Natural Science Foundation of\u00a0Hunan Province","award":["2023JJ40171"],"award-info":[{"award-number":["2023JJ40171"]}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2026,10,15]]},"abstract":"<jats:title>Abstract<\/jats:title>\n                  <jats:p>Two-dimensional (2D) vertical transistors, featuring atomically thin channels and an inherent vertical architecture, hold extensive promise for ultrascaled electronics. However, achieving reliable polarity control in such devices has remained a persistent challenge over the past decade. Here, we demonstrate a vertical MoTe2 transistor with highly controllable polarity. By implementing van der Waals (vdW) integration for both contacts, the carrier injection barrier can be effectively modulated via the work functions of the electrodes. Leveraging the favorable band alignment with graphene and the narrow bandgap of MoTe2, we achieve selective n-type and p-type operation using Ag and Pt top contacts, respectively. Furthermore, through graphene work-function engineering, we optimize the switching performance, realizing an on\/off ratio exceeding 104 in a \u223c5 nm p-type MoTe2 vertical transistor, surpassing all previously reported p-type 2D vertical transistors based on graphene\/TMD\/metal architectures. Finally, we integrate two vertical transistors of opposite polarities, fabricated from graphene\/MoTe2 heterostructure with different top contacts, to demonstrate a complementary inverter on a single chip. Our work not only provides a viable strategy for polarity control in vertical heterostructures but also suggests a potential pathway toward complementary circuits based on 2D vertical transistors.<\/jats:p>","DOI":"10.1021\/acs.jpclett.6c02965","type":"journal-article","created":{"date-parts":[[2026,10,3]],"date-time":"2026-10-03T15:01:42Z","timestamp":1791039702000},"page":"11829-11835","source":"Crossref","is-referenced-by-count":0,"title":["Highly Controllable\nPolarity in Two-Dimensional Vertical\nTransistors"],"prefix":"10.1021","volume":"17","author":[{"ORCID":"https:\/\/orcid.org\/0000-0002-6120-4096","authenticated-orcid":true,"given":"Likuan","family":"Ma","sequence":"first","affiliation":[{"name":"Central South University , , ,","place":["Changsha, China, 410083"]},{"name":"Central South University , , ,","place":["Changsha, China, 410083"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Quanyang","family":"Tao","sequence":"additional","affiliation":[{"name":"Hunan University , , ,","place":["Changsha, China, 410082"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-5300-3174","authenticated-orcid":true,"given":"Lingan","family":"Kong","sequence":"additional","affiliation":[{"name":"Songshan Lake Materials Laboratory , ,","place":["Dongguan, China, 523808"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Wanrong","family":"Liu","sequence":"additional","affiliation":[{"name":"Central South University , , ,","place":["Changsha, China, 410083"]},{"name":"Central South University , , ,","place":["Changsha, China, 410083"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Chenxing","family":"Jin","sequence":"additional","affiliation":[{"name":"Central South University , , ,","place":["Changsha, China, 410083"]},{"name":"Central South University , , ,","place":["Changsha, China, 410083"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Xiaofang","family":"Shi","sequence":"additional","affiliation":[{"name":"Central South University , , ,","place":["Changsha, China, 410083"]},{"name":"Central South University , , ,","place":["Changsha, China, 410083"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Ruihan","family":"Li","sequence":"additional","affiliation":[{"name":"Central South University , , ,","place":["Changsha, China, 410083"]},{"name":"Central South University , , ,","place":["Changsha, China, 410083"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Guansong","family":"Qiu","sequence":"additional","affiliation":[{"name":"Central South University , , ,","place":["Changsha, China, 410083"]},{"name":"Central South University , , ,","place":["Changsha, China, 410083"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-0024-9290","authenticated-orcid":true,"given":"Yuan","family":"Liu","sequence":"additional","affiliation":[{"name":"Hunan University , , ,","place":["Changsha, China, 410082"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-4423-8128","authenticated-orcid":true,"given":"Jia","family":"Sun","sequence":"additional","affiliation":[{"name":"Central South University , , ,","place":["Changsha, China, 410083"]},{"name":"Central South University , , ,","place":["Changsha, China, 410083"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-5553-0186","authenticated-orcid":true,"given":"Junliang","family":"Yang","sequence":"additional","affiliation":[{"name":"Central South University , , ,","place":["Changsha, China, 410083"]},{"name":"Central South University , , ,","place":["Changsha, China, 410083"]}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"316","published-online":{"date-parts":[[2026,10,3]]},"reference":[{"issue":"6085","key":"2026101508220887000_cit1","doi-asserted-by":"publisher","first-page":"1140","DOI":"10.1126\/science.1220527","article-title":"Graphene barristor,\na triode device with a gate-controlled Schottky barrier","volume":"336","author":"Yang","year":"2012","journal-title":"Science"},{"issue":"3","key":"2026101508220887000_cit2","doi-asserted-by":"publisher","first-page":"246","DOI":"10.1038\/nmat3518","article-title":"Vertically\nstacked multi-heterostructures of layered materials for\nlogic transistors and complementary inverters","volume":"12","author":"Yu","year":"2013","journal-title":"Nat. Mater."},{"issue":"9","key":"2026101508220887000_cit3","doi-asserted-by":"publisher","DOI":"10.1038\/natrevmats.2016.42","article-title":"Van der Waals heterostructures and devices","volume":"1","author":"Liu","year":"2016","journal-title":"Nat. Rev. Mater."},{"issue":"5","key":"2026101508220887000_cit4","doi-asserted-by":"publisher","first-page":"342","DOI":"10.1038\/s41928-021-00566-0","article-title":"Transferred van der\nWaals metal electrodes for sub-1-nm\nMoS2 vertical transistors","volume":"4","author":"Liu","year":"2021","journal-title":"Nat. Electron."},{"issue":"6","key":"2026101508220887000_cit5","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevApplied.17.L061004","article-title":"Complementary tunneling behaviors in van der Waals\nvertical heterostructures","volume":"17","author":"Ma","year":"2022","journal-title":"Phys. Rev. Applied"},{"issue":"3","key":"2026101508220887000_cit6","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevApplied.20.034032","article-title":"Complementary two-dimensional vertical transistors\nthrough lamination with a van der Waals metal","volume":"20","author":"Ma","year":"2023","journal-title":"Phys. Rev. Applied"},{"issue":"17","key":"2026101508220887000_cit7","doi-asserted-by":"publisher","first-page":"8303","DOI":"10.1021\/acs.nanolett.3c02518","article-title":"Realizing on\/off ratios\nover 104 for sub-2 nm vertical\ntransistors","volume":"23","author":"Ma","year":"2023","journal-title":"Nano Lett."},{"issue":"29","key":"2026101508220887000_cit8","doi-asserted-by":"publisher","DOI":"10.1002\/advs.202302760","article-title":"High-density\nvertical transistors with pitch size down\nto 20 nm","volume":"10","author":"Xiao","year":"2023","journal-title":"Adv. Sci."},{"issue":"41","key":"2026101508220887000_cit9","doi-asserted-by":"publisher","first-page":"28301","DOI":"10.1021\/acsnano.4c09615","article-title":"Two-dimensional vertical\ntransistor with one-dimensional van der\nWaals contact","volume":"18","author":"Mei","year":"2024","journal-title":"ACS Nano"},{"issue":"1","key":"2026101508220887000_cit10","doi-asserted-by":"publisher","first-page":"368","DOI":"10.1021\/acs.nanolett.4c05136","article-title":"P-type vertical\nFETs realized by using Fermi-Level pinning-free 2D metallic electrodes","volume":"25","author":"Park","year":"2025","journal-title":"Nano Lett."},{"issue":"1","key":"2026101508220887000_cit11","doi-asserted-by":"publisher","first-page":"7676","DOI":"10.1038\/s41467-024-52150-7","article-title":"Large-scale sub-5-nm\nvertical transistors by van der Waals integration","volume":"15","author":"Yang","year":"2024","journal-title":"Nat. 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Mater."},{"issue":"24","key":"2026101508220887000_cit14","doi-asserted-by":"publisher","first-page":"22291","DOI":"10.1021\/acsnano.5c04746","article-title":"1,000,000\non\/off ratio in sub-1 nm channel length carbon\nnanotube\/monolayer MoS2\/carbon nanotube vertical transistors","volume":"19","author":"Do","year":"2025","journal-title":"ACS Nano"},{"issue":"27","key":"2026101508220887000_cit15","doi-asserted-by":"publisher","DOI":"10.1126\/sciadv.adv4742","article-title":"Momentum-dependent field-effect\ntransistor","volume":"11","author":"Li","year":"2025","journal-title":"Sci. Adv."},{"issue":"5","key":"2026101508220887000_cit16","doi-asserted-by":"publisher","first-page":"2583","DOI":"10.1021\/acs.chemrev.3c00697","article-title":"van der Waals\ncontact for two-dimensional\ntransition metal dichalcogenides","volume":"124","author":"Ma","year":"2024","journal-title":"Chem. 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Electron.\nMater."},{"issue":"6","key":"2026101508220887000_cit21","doi-asserted-by":"publisher","first-page":"1704","DOI":"10.1021\/nl080649i","article-title":"Graphene-based liquid crystal device","volume":"8","author":"Blake","year":"2008","journal-title":"Nano Lett."},{"issue":"1","key":"2026101508220887000_cit22","doi-asserted-by":"publisher","first-page":"408","DOI":"10.1021\/nn102236x","article-title":"Control of carrier type and density\nin exfoliated graphene by interface\nengineering","volume":"5","author":"Wang","year":"2011","journal-title":"ACS Nano"},{"key":"2026101508220887000_cit23","doi-asserted-by":"publisher","DOI":"10.1038\/srep22858","article-title":"Correlation of p-doping\nin CVD Graphene with Substrate Surface Charges","volume":"6","author":"Goniszewski","year":"2016","journal-title":"Sci. Rep."},{"issue":"18","key":"2026101508220887000_cit24","doi-asserted-by":"publisher","first-page":"9702","DOI":"10.1021\/acsami.5b01474","article-title":"Highly stable and tunable\nn-type\ngraphene field-effect transistors with poly(vinyl alcohol) films","volume":"7","author":"Kim","year":"2015","journal-title":"ACS Appl. Mater. Interfaces"},{"issue":"5","key":"2026101508220887000_cit25","doi-asserted-by":"publisher","DOI":"10.1063\/1.4996425","article-title":"Relation between\nfilm thickness and surface doping of MoS2 based field effect\ntransistors","volume":"6","author":"Lockhart de la Rosa","year":"2018","journal-title":"APL Mater."},{"issue":"10","key":"2026101508220887000_cit26","doi-asserted-by":"publisher","DOI":"10.1002\/aelm.202000616","article-title":"Control\nof the Schottky barrier and contact resistance at metal\u2013WSe2 interfaces by polymeric doping","volume":"6","author":"Ngo","year":"2020","journal-title":"Adv.\nElectron. Mater."},{"issue":"15","key":"2026101508220887000_cit27","doi-asserted-by":"publisher","first-page":"6894","DOI":"10.1021\/jp910085n","article-title":"Tuning the Fermi level of SiO2-supported\nsingle-layer graphene by thermal annealing","volume":"114","author":"Nourbakhsh","year":"2010","journal-title":"J. Phys. Chem. C"},{"issue":"12","key":"2026101508220887000_cit28","doi-asserted-by":"publisher","first-page":"4944","DOI":"10.1021\/nl1029607","article-title":"Atmospheric oxygen binding and hole\ndoping in deformed graphene on a SiO2 substrate","volume":"10","author":"Ryu","year":"2010","journal-title":"Nano Lett."},{"issue":"2","key":"2026101508220887000_cit29","doi-asserted-by":"publisher","first-page":"767","DOI":"10.1021\/nl103977d","article-title":"Toward intrinsic graphene surfaces:\na systematic study on thermal\nannealing and wet-chemical treatment of SiO2-supported\ngraphene devices","volume":"11","author":"Cheng","year":"2011","journal-title":"Nano Lett."},{"issue":"4","key":"2026101508220887000_cit30","doi-asserted-by":"publisher","first-page":"210","DOI":"10.1038\/nnano.2008.67","article-title":"Monitoring\ndopants by\nRaman scattering in an electrochemically top-gated graphene transistor","volume":"3","author":"Das","year":"2008","journal-title":"Nat. Nanotechnol."},{"issue":"19","key":"2026101508220887000_cit31","doi-asserted-by":"publisher","first-page":"3742","DOI":"10.1002\/adma.201506450","article-title":"Low-voltage\ncomplementary electronics\nfrom ion-gel-gated vertical van der Waals heterostructures","volume":"28","author":"Choi","year":"2016","journal-title":"Adv. Mater."},{"issue":"12","key":"2026101508220887000_cit32","doi-asserted-by":"publisher","first-page":"799","DOI":"10.1038\/s41578-023-00609-2","article-title":"Vapour-phase\ndeposition of two-dimensional layered chalcogenides","volume":"8","author":"Zhang","year":"2023","journal-title":"Nat. Rev. Mater."},{"issue":"4","key":"2026101508220887000_cit33","doi-asserted-by":"publisher","first-page":"1689","DOI":"10.1021\/acs.nanolett.4c05884","article-title":"Polymer-free\nand dry patterning of wafer-scale two-dimensional semiconductors via\nvan der Waals delamination","volume":"25","author":"Ding","year":"2025","journal-title":"Nano Lett."},{"issue":"5","key":"2026101508220887000_cit34","doi-asserted-by":"publisher","first-page":"471","DOI":"10.1038\/s41565-023-01342-1","article-title":"Highly reproducible van der Waals integration of two-dimensional\nelectronics on the wafer scale","volume":"18","author":"Yang","year":"2023","journal-title":"Nat. Nanotechnol."}],"container-title":["The Journal of Physical\nChemistry Letters"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/pubs.acs.org\/doi\/pdf\/10.1021\/acs.jpclett.6c02965","content-type":"application\/pdf","content-version":"vor","intended-application":"unspecified"},{"URL":"https:\/\/pubs.acs.org\/jpclcd\/article-pdf\/17\/41\/11829\/68739456\/acs.jpclett.6c02965.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"syndication"},{"URL":"https:\/\/pubs.acs.org\/jpclcd\/article-pdf\/17\/41\/11829\/68739456\/acs.jpclett.6c02965.pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2026,10,15]],"date-time":"2026-10-15T12:49:49Z","timestamp":1792068589000},"score":1,"resource":{"primary":{"URL":"https:\/\/pubs.acs.org\/jpclcd\/article\/17\/41\/11829\/5444202\/Highly-Controllable-Polarity-in-Two-Dimensional"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2026,10,3]]},"references-count":34,"journal-issue":{"issue":"41","published-online":{"date-parts":[[2026,10,3]]},"published-print":{"date-parts":[[2026,10,15]]}},"URL":"https:\/\/doi.org\/10.1021\/acs.jpclett.6c02965","relation":{},"ISSN":["1948-7185"],"issn-type":[{"value":"1948-7185","type":"electronic"}],"subject":[],"published":{"date-parts":[[2026,10,3]]}}}