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However, the high contact barrier between the metal and semiconductor has hindered further performance improvement. Here, we introduce a novel triboelectric plasma regulation technique aimed at reducing the contact barrier between the metal and semiconductor. By injecting electrons into the S-vacancy and keeping them at the defect sites, stable electron-vacancy complexes are formed, which induce an external reverse electric field and effectively reduce the contact potential barrier between the metal and the semiconductor. At the same time, the efficiency of free-carrier injection is enhanced, significantly improving the optoelectronic performance and gate modulation capability of the device. The results show that the photoresponse performance and gate modulation ability of MoS2 devices grown by chemical vapor deposition (CVD) have been improved by 22 times and 3 orders of magnitude, respectively. This triboelectric plasma regulation technique demonstrates great potential for optimizing the performance of 2D semiconductor devices.<\/jats:p>","DOI":"10.1021\/acs.langmuir.6c02119","type":"journal-article","created":{"date-parts":[[2026,9,4]],"date-time":"2026-09-04T04:26:58Z","timestamp":1788496018000},"page":"27074-27084","source":"Crossref","is-referenced-by-count":0,"title":["<i>In Situ<\/i>\n                    Modulation of the Au-MoS2 Contact Barrier\nvia Triboelectric Plasma-Assisted Electron\nInjection"],"prefix":"10.1021","volume":"42","author":[{"given":"Yang","family":"Liu","sequence":"first","affiliation":[{"name":"Henan University , , ,","place":["Kaifeng, People\u2019s Republic of China, 475004"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Haodi","family":"Wu","sequence":"additional","affiliation":[{"name":"Henan University , , ,","place":["Kaifeng, People\u2019s Republic of China, 475004"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Junmeng","family":"Guo","sequence":"additional","affiliation":[{"name":"Henan University , , ,","place":["Kaifeng, People\u2019s Republic of China, 475004"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Jiao","family":"Wang","sequence":"additional","affiliation":[{"name":"Henan University , , ,","place":["Kaifeng, People\u2019s Republic of China, 475004"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Pengfei","family":"Li","sequence":"additional","affiliation":[{"name":"Henan University , , ,","place":["Kaifeng, People\u2019s Republic of China, 475004"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Yu","family":"Sun","sequence":"additional","affiliation":[{"name":"Henan University , , ,","place":["Kaifeng, People\u2019s Republic of China, 475004"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Luyao","family":"Zhang","sequence":"additional","affiliation":[{"name":"Henan University , , ,","place":["Kaifeng, People\u2019s Republic of China, 475004"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Feng","family":"Yang","sequence":"additional","affiliation":[{"name":"Henan University , , ,","place":["Kaifeng, People\u2019s Republic of China, 475004"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Zuliang","family":"Du","sequence":"additional","affiliation":[{"name":"Henan University , , ,","place":["Kaifeng, People\u2019s Republic of China, 475004"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-1242-8739","authenticated-orcid":true,"given":"Gang","family":"Cheng","sequence":"additional","affiliation":[{"name":"Henan University , , ,","place":["Kaifeng, People\u2019s Republic of China, 475004"]}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"316","published-online":{"date-parts":[[2026,9,3]]},"reference":[{"key":"2026092209090935800_cit1","doi-asserted-by":"publisher","first-page":"1170","DOI":"10.1038\/s41566-024-01501-3","article-title":"Colossal in-plane\noptical anisotropy in a two-dimensional van der Waals crystal","volume":"18","author":"Guo","year":"2024","journal-title":"Nat. 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Colloid Interface\nSci."},{"key":"2026092209090935800_cit28","doi-asserted-by":"publisher","DOI":"10.1038\/s41467-025-63193-9","article-title":"Ambipolar\nohmic contact to silicon for high-performance brain-inspired image\nsensors","volume":"16","author":"Sun","year":"2025","journal-title":"Nat. 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Nanotechnol."},{"key":"2026092209090935800_cit31","doi-asserted-by":"publisher","DOI":"10.1016\/j.nanoen.2023.108928","article-title":"A flexible PI\/graphene heterojunction optoelectronic\ndevice modulated by TENG and UV light for neuromorphic vision system","volume":"117","author":"Guo","year":"2023","journal-title":"Nano Energy"},{"key":"2026092209090935800_cit32","doi-asserted-by":"publisher","DOI":"10.1016\/j.nanoen.2025.111430","article-title":"Triboelectric\nplasma regulated ZnO thin films for ultra-low power room-temperature\nacetone gas sensing","volume":"145","author":"Liu","year":"2025","journal-title":"Nano Energy"},{"key":"2026092209090935800_cit33","doi-asserted-by":"publisher","DOI":"10.1016\/j.cej.2025.170213","article-title":"Butterfly-inspired ultraviolet\nvision chip based on ZnO memristor\narrays for real-time dynamic plant motion tracking","volume":"525","author":"Liu","year":"2025","journal-title":"Chem. Eng. 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Phys."},{"key":"2026092209090935800_cit37","doi-asserted-by":"publisher","first-page":"13545","DOI":"10.1021\/acsnano.3c02103","article-title":"Room-Temperature\nPhotoluminescence Mediated by Sulfur Vacancies in 2D Molybdenum Disulfide","volume":"17","author":"Zhu","year":"2023","journal-title":"ACS Nano"},{"key":"2026092209090935800_cit38","doi-asserted-by":"publisher","first-page":"4203","DOI":"10.1039\/D3NA00045A","article-title":"Non-volatile resistive switching\nmechanism in single-layer MoS2 memristors: insights from\nab initio modelling of Au and MoS2 interfaces","volume":"5","author":"Boschetto","year":"2023","journal-title":"Nanoscale Adv."},{"key":"2026092209090935800_cit39","doi-asserted-by":"publisher","DOI":"10.1002\/adfm.202513567","article-title":"2D Electron\nGas-Induced the Lowered Tunneling Barrier and Ohmic Behavior Simultaneously\nin 2D Metal-Semiconductor Contacts","volume":"36","author":"Niu","year":"2025","journal-title":"Adv. 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