{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,9,7]],"date-time":"2026-09-07T20:12:23Z","timestamp":1788811943385,"version":"build-2803163510"},"reference-count":34,"publisher":"American Chemical Society (ACS)","issue":"6","license":[{"start":{"date-parts":[[2025,1,22]],"date-time":"2025-01-22T00:00:00Z","timestamp":1737504000000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2025,1,22]],"date-time":"2025-01-22T00:00:00Z","timestamp":1737504000000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"},{"start":{"date-parts":[[2025,1,22]],"date-time":"2025-01-22T00:00:00Z","timestamp":1737504000000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-045"}],"funder":[{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["62171426"],"award-info":[{"award-number":["62171426"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100002367","name":"Chinese Academy of Sciences","doi-asserted-by":"publisher","award":["YSBR-029"],"award-info":[{"award-number":["YSBR-029"]}],"id":[{"id":"10.13039\/501100002367","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2025,2,12]]},"abstract":"<jats:title>Abstract<\/jats:title>\n                  <jats:p>Spin\u2013orbit torque (SOT) is widely considered to be a fast and robust writing scheme for magnetic random-access memories (MRAMs). However, the requirements of field-free switching and high switching efficiency are often incompatible in SOT devices, placing a critical challenge on its improvement. Here we propose that by utilizing biaxial systems the dilemma between high-efficiency and external-field-free SOT switching can be solved intrinsically. We further demonstrate the feasibility of the proposed writing scheme in a MgO\/Fe\/W device and show that the intrinsic multistate storage ability of the biaxial device compensates its additional area requirement. These results are expected to pave the way toward the further development of SOT-MRAMs.<\/jats:p>","DOI":"10.1021\/acs.nanolett.4c02773","type":"journal-article","created":{"date-parts":[[2025,1,22]],"date-time":"2025-01-22T11:11:08Z","timestamp":1737544268000},"page":"2089-2095","source":"Crossref","is-referenced-by-count":1,"title":["Intrinsic Solution\nto the Dilemma between High-Efficiency\nand External-Field-Free Spin\u2013Orbit Torque Switching Based on\nBiaxial Devices"],"prefix":"10.1021","volume":"25","author":[{"given":"Biao","family":"Wu","sequence":"first","affiliation":[{"name":"University of Science and Technology of China , , ,","place":["Hefei, People\u2019s Republic of China, 230026"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Siyuan","family":"Jiang","sequence":"additional","affiliation":[{"name":"University of Science and Technology of China , , ,","place":["Hefei, People\u2019s Republic of China, 230026"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Di","family":"Wang","sequence":"additional","affiliation":[{"name":"University of Science and Technology of China , , ,","place":["Hefei, People\u2019s Republic of China, 230026"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Xuefeng","family":"Zhao","sequence":"additional","affiliation":[{"name":"University of Science and Technology of China , , ,","place":["Hefei, People\u2019s Republic of China, 230026"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Xueqiang","family":"Xiang","sequence":"additional","affiliation":[{"name":"University of Science and Technology of China , , ,","place":["Hefei, People\u2019s Republic of China, 230026"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Ran","family":"Huo","sequence":"additional","affiliation":[{"name":"University of Science and Technology of China , , ,","place":["Hefei, People\u2019s Republic of China, 230026"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Xiaolin","family":"Huang","sequence":"additional","affiliation":[{"name":"University of Science and Technology of China , , ,","place":["Hefei, People\u2019s Republic of China, 230026"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Jun","family":"Xu","sequence":"additional","affiliation":[{"name":"University of Science and Technology of China , , ,","place":["Hefei, People\u2019s Republic of China, 230026"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-6220-4461","authenticated-orcid":true,"given":"Shibing","family":"Long","sequence":"additional","affiliation":[{"name":"University of Science and Technology of China , , ,","place":["Hefei, People\u2019s Republic of China, 230026"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-9349-5556","authenticated-orcid":true,"given":"Nan","family":"Gao","sequence":"additional","affiliation":[{"name":"University of Science and Technology of China , , ,","place":["Hefei, People\u2019s Republic of China, 230026"]},{"name":"Hefei Comprehensive National Science Center , , ,","place":["Hefei, People\u2019s Republic of China, 230026"]}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"316","published-online":{"date-parts":[[2025,1,22]]},"reference":[{"key":"2026090715084943100_cit1","unstructured":"IEEE International Roadmap for Devices and Systems.\n          \n          https:\/\/irds.ieee.org\/editions (accessed 2024\u201312\u201313)."},{"issue":"13","key":"2026090715084943100_cit2","doi-asserted-by":"publisher","first-page":"9353","DOI":"10.1103\/PhysRevB.54.9353","article-title":"Emission of\nspin waves by a magnetic multilayer traversed by a current","volume":"54","author":"Berger","year":"1996","journal-title":"Phys. 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In  A sub-ns three-terminal spin-orbit\ntorque induced switching device, 2016 IEEE Symposium on VLSI\nTechnology, 14\u201316 June 2016, IEEE, 2016; pp 1\u20132.","DOI":"10.1109\/VLSIT.2016.7573379"},{"issue":"1","key":"2026090715084943100_cit16","doi-asserted-by":"publisher","DOI":"10.35848\/1882-0786\/abd598","article-title":"Dependency of high-speed\nwrite properties on external magnetic field in spin\u2013orbit torque\nin-plane magnetoresistance devices","volume":"14","author":"Shiokawa","year":"2021","journal-title":"Appl. Phys.\nExpress"},{"key":"2026090715084943100_cit17","doi-asserted-by":"crossref","unstructured":"Honjo, H.; Nguyen, T. V. A.; Watanabe, T.; Nasuno, T.; Zhang, C.; Tanigawa, T.; Miura, S.; Inoue, H.; Niwa, M.; Yoshiduka, T.; Noguchi, Y.; Yasuhira, M.; Tamakoshi, A.; Natsui, M.; Ma, Y.; Koike, H.; Takahashi, Y.; Furuya, K.; Shen, H.; Fukami, S.; Sato, H.; Ikeda, S.; Hanyu, T.; Ohno, H.; Endoh, T. In  First demonstration of field-free SOT-MRAM with 0.35 ns write speed\nand 70 thermal stability under 400\u00b0C thermal tolerance by canted\nSOT structure and its advanced patterning\/SOT channel technology; 2019 IEEE International Electron Devices Meeting (IEDM), 7\u201311\nDec. 2019, IEEE, 2019; pp 28.5.1\u201328.5.4.","DOI":"10.1109\/IEDM19573.2019.8993443"},{"issue":"7","key":"2026090715084943100_cit18","doi-asserted-by":"publisher","first-page":"621","DOI":"10.1038\/nnano.2016.29","article-title":"A spin\u2013orbit\ntorque switching scheme with collinear magnetic easy axis and current\nconfiguration","volume":"11","author":"Fukami","year":"2016","journal-title":"Nat. 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Rep."},{"key":"2026090715084943100_cit34","doi-asserted-by":"publisher","first-page":"169154","DOI":"10.1016\/j.jmmm.2022.169154","article-title":"Epitaxial\nall-bcc-Co50Fe50\/Cu\/Co50Fe50 current-in-plane giant magnetoresistive\nspin-valves on Si(001) substrate","volume":"551","author":"Fathoni","year":"2022","journal-title":"J. Magn. 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