{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,9,1]],"date-time":"2026-09-01T09:13:23Z","timestamp":1788254003511,"version":"build-2803163510"},"reference-count":69,"publisher":"American Chemical Society (ACS)","issue":"33","license":[{"start":{"date-parts":[[2026,8,10]],"date-time":"2026-08-10T00:00:00Z","timestamp":1786320000000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2026,8,10]],"date-time":"2026-08-10T00:00:00Z","timestamp":1786320000000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"},{"start":{"date-parts":[[2026,8,10]],"date-time":"2026-08-10T00:00:00Z","timestamp":1786320000000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-045"}],"funder":[{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["12374359"],"award-info":[{"award-number":["12374359"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["12574459"],"award-info":[{"award-number":["12574459"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100017596","name":"Natural Science Basic Research Program of Shaanxi Province","doi-asserted-by":"publisher","award":["2025JC-YBMS-654"],"award-info":[{"award-number":["2025JC-YBMS-654"]}],"id":[{"id":"10.13039\/501100017596","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2026,8,26]]},"abstract":"<jats:title>Abstract<\/jats:title>\n                  <jats:p>Two-dimensional (2D) material-based phototransistors offer a unique combination of optical sensing, signal amplification, and logic operation within a single device, yet they fundamentally suffer from an inherent gain-speed trade-off. Here, we demonstrate a 2D photovoltaic phototransistor that overcomes this limitation by using a MoS2\/PtSe2 heterojunction to gate a graphene channel. The ultrafast photovoltaic effect in the heterojunction enables charge separation, yielding an ultrahigh photoconductive gain (up to 108) in the graphene channel via interfacial gating. Besides, the response time (below the instrumental resolution of 550 ns) is governed by carrier transit in the graphene channel, enabling simultaneous high speed and high gain. Moreover, broadband photodetection from visible to near-infrared is enabled by the optical properties of the MoS2\/PtSe2 heterojunction, with the detectivity exceeding 1011 Jones. These results establish a new paradigm for high-performance 2D phototransistors by harnessing photovoltaic and photogating effects to overcome the classical gain-speed trade-off.<\/jats:p>","DOI":"10.1021\/acs.nanolett.6c01932","type":"journal-article","created":{"date-parts":[[2026,8,10]],"date-time":"2026-08-10T18:02:00Z","timestamp":1786384920000},"page":"10992-11001","source":"Crossref","is-referenced-by-count":0,"title":["High-Speed and High-Gain Graphene Photovoltaic Phototransistor\nGated by a van der Waals Heterojunction"],"prefix":"10.1021","volume":"26","author":[{"given":"Yihan","family":"Yin","sequence":"first","affiliation":[{"name":"Northwestern Polytechnical University , , ,","place":["Xi\u2019an, China, 710129"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Jiayi","family":"Zhang","sequence":"additional","affiliation":[{"name":"Northwestern Polytechnical University , , ,","place":["Xi\u2019an, China, 710129"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Xiaolong","family":"Zhang","sequence":"additional","affiliation":[{"name":"Northwestern Polytechnical University , , ,","place":["Xi\u2019an, China, 710129"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Jiongtao","family":"Zhang","sequence":"additional","affiliation":[{"name":"Northwestern Polytechnical University , , ,","place":["Xi\u2019an, China, 710129"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Liang","family":"Liu","sequence":"additional","affiliation":[{"name":"Northwestern Polytechnical University , , ,","place":["Xi\u2019an, China, 710129"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Haiya","family":"Ma","sequence":"additional","affiliation":[{"name":"Northwestern Polytechnical University , , ,","place":["Xi\u2019an, China, 710129"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-1804-9262","authenticated-orcid":true,"given":"Xiaoguang","family":"Luo","sequence":"additional","affiliation":[{"name":"Northwestern Polytechnical University , , ,","place":["Xi\u2019an, China, 710129"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-2469-5807","authenticated-orcid":true,"given":"Xuetao","family":"Gan","sequence":"additional","affiliation":[{"name":"Northwestern Polytechnical University , , ,","place":["Xi\u2019an, China, 710129"]}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"316","published-online":{"date-parts":[[2026,8,10]]},"reference":[{"issue":"5696","key":"2026090104153829700_cit1","doi-asserted-by":"publisher","first-page":"666","DOI":"10.1126\/science.1102896","article-title":"Electric Field Effect\nin Atomically Thin Carbon Films","volume":"306","author":"Novoselov","year":"2004","journal-title":"Science"},{"issue":"12","key":"2026090104153829700_cit2","doi-asserted-by":"publisher","first-page":"899","DOI":"10.1038\/nphoton.2014.271","article-title":"Two-dimensional\nmaterial nanophotonics","volume":"8","author":"Xia","year":"2014","journal-title":"Nat. Photonics"},{"issue":"6","key":"2026090104153829700_cit3","doi-asserted-by":"publisher","first-page":"6514","DOI":"10.1021\/acs.chemrev.1c00735","article-title":"2D Heterostructures for Ubiquitous Electronics and\nOptoelectronics: Principles, Opportunities, and Challenges","volume":"122","author":"Pham","year":"2022","journal-title":"Chem. Rev."},{"issue":"2","key":"2026090104153829700_cit4","doi-asserted-by":"publisher","first-page":"203","DOI":"10.37188\/lam.2025.042","article-title":"Versatile on-chip polarization\ndetection leveraging two-dimensional\nmaterials","volume":"6","author":"Ma","year":"2025","journal-title":"Light: Advanced Manufacturing"},{"issue":"27","key":"2026090104153829700_cit5","doi-asserted-by":"publisher","DOI":"10.1002\/adma.201902039","article-title":"Graphene Hybrid Structures for Integrated and Flexible\nOptoelectronics","volume":"32","author":"Chen","year":"2020","journal-title":"Adv. Mater."},{"issue":"4","key":"2026090104153829700_cit6","doi-asserted-by":"publisher","first-page":"523","DOI":"10.37188\/lam.2024.044","article-title":"Ultracompact computational\nspectroscopy with a detour-phased planar lens","volume":"5","author":"Yang","year":"2024","journal-title":"Light: Advanced Manufacturing"},{"issue":"12","key":"2026090104153829700_cit7","doi-asserted-by":"publisher","first-page":"839","DOI":"10.1038\/nnano.2009.292","article-title":"Ultrafast graphene photodetector","volume":"4","author":"Xia","year":"2009","journal-title":"Nat. Nanotechnol."},{"issue":"1","key":"2026090104153829700_cit8","doi-asserted-by":"publisher","first-page":"238","DOI":"10.1038\/s41377-025-01832-y","article-title":"On-chip graphene\nphotodetectors with a nonvolatile p-i-n homojunction","volume":"14","author":"Tian","year":"2025","journal-title":"Light: Science & Applications"},{"issue":"6","key":"2026090104153829700_cit9","doi-asserted-by":"publisher","first-page":"363","DOI":"10.1038\/nnano.2012.60","article-title":"Hybrid graphene-quantum\ndot phototransistors with ultrahigh gain","volume":"7","author":"Konstantatos","year":"2012","journal-title":"Nat.\nNanotechnol."},{"issue":"3","key":"2026090104153829700_cit10","doi-asserted-by":"publisher","DOI":"10.1002\/adma.202301197","article-title":"Next-Generation\nPhotodetectors beyond van der Waals Junctions","volume":"36","author":"Wang","year":"2024","journal-title":"Adv. Mater."},{"issue":"7641","key":"2026090104153829700_cit11","doi-asserted-by":"publisher","first-page":"324","DOI":"10.1038\/nature21050","article-title":"Photovoltage field-effect transistors","volume":"542","author":"Adinolfi","year":"2017","journal-title":"Nature"},{"issue":"4","key":"2026090104153829700_cit12","doi-asserted-by":"publisher","first-page":"1126","DOI":"10.1021\/acsphotonics.2c01861","article-title":"Highly Sensitive\nPhototransistors\nBased on Partially Suspended Monolayer WS2","volume":"10","author":"Liu","year":"2023","journal-title":"ACS Photonics"},{"issue":"24","key":"2026090104153829700_cit13","doi-asserted-by":"publisher","first-page":"25037","DOI":"10.1021\/acsnano.3c07665","article-title":"Ultrafast and Broad-Band\nGraphene Heterojunction Photodetectors with High Gain","volume":"17","author":"Tsai","year":"2023","journal-title":"ACS Nano"},{"issue":"1","key":"2026090104153829700_cit14","doi-asserted-by":"publisher","first-page":"572","DOI":"10.1038\/s41467-017-00722-1","article-title":"Ultrasensitive\nall-2D MoS2 phototransistors\nenabled by an out-of-plane MoS2 PN homojunction","volume":"8","author":"Huo","year":"2017","journal-title":"Nat. Commun."},{"issue":"15","key":"2026090104153829700_cit15","doi-asserted-by":"publisher","DOI":"10.1002\/adma.202008080","article-title":"Tunable Linearity\nof High-Performance Vertical Dual-Gate vdW Phototransistors","volume":"33","author":"Xu","year":"2021","journal-title":"Adv. Mater."},{"issue":"10","key":"2026090104153829700_cit16","doi-asserted-by":"publisher","first-page":"6391","DOI":"10.1021\/acs.nanolett.7b03263","article-title":"Improving\nthe Performance of Graphene Phototransistors Using a Heterostructure\nas the Light-Absorbing Layer","volume":"17","author":"Chen","year":"2017","journal-title":"Nano Lett."},{"issue":"10","key":"2026090104153829700_cit17","doi-asserted-by":"publisher","first-page":"1066","DOI":"10.1364\/OPTICA.3.001066","article-title":"High-performance graphene\nphotodetector using interfacial gating","volume":"3","author":"Guo","year":"2016","journal-title":"Optica"},{"issue":"23","key":"2026090104153829700_cit18","doi-asserted-by":"publisher","DOI":"10.1002\/adfm.202311730","article-title":"Auger-Assisted\nSecondary Hot Carrier Transfer in a Type I MoS2\/PtSe2 Heterostructure","volume":"34","author":"Yang","year":"2024","journal-title":"Adv. Funct. Mater."},{"key":"2026090104153829700_cit19","doi-asserted-by":"publisher","DOI":"10.1016\/j.nantod.2026.102976","article-title":"Controlled epitaxy\nof perovskite van der waals heterostructures enables advanced self-powered\nbroadband photodetectors","volume":"67","author":"Lin","year":"2026","journal-title":"Nano Today"},{"issue":"14","key":"2026090104153829700_cit20","doi-asserted-by":"publisher","DOI":"10.1002\/adom.202302937","article-title":"Photo-Induced Electrical\nGating with the Inserting of an Interfacial Carrier Blocking Layer\nfor Organic\/Graphene Phototransistors","volume":"12","author":"Yang","year":"2024","journal-title":"Advanced\nOptical Materials"},{"issue":"12","key":"2026090104153829700_cit21","doi-asserted-by":"publisher","first-page":"12053","DOI":"10.1021\/acsnano.4c17837","article-title":"MoS2 Phototransistors\nPhotogated with a P-N Junction Diode","volume":"19","author":"Mousavi Khaleghi","year":"2025","journal-title":"ACS Nano"},{"issue":"7","key":"2026090104153829700_cit22","doi-asserted-by":"publisher","first-page":"1151","DOI":"10.1109\/LED.2025.3568545","article-title":"Negative Photoresponses\nin MoS2 Flakes Photogated by p-n Junction Diode","volume":"46","author":"Liu","year":"2025","journal-title":"IEEE Electron Device Lett."},{"issue":"5","key":"2026090104153829700_cit23","doi-asserted-by":"publisher","DOI":"10.1002\/adma.201604230","article-title":"High-Electron-Mobility\nand Air-Stable 2D Layered PtSe2 FETs","volume":"29","author":"Zhao","year":"2017","journal-title":"Adv. Mater."},{"issue":"1","key":"2026090104153829700_cit24","doi-asserted-by":"publisher","first-page":"6894","DOI":"10.1038\/s41467-021-27213-8","article-title":"Interlayer\nexciton mediated second harmonic generation in bilayer MoS2","volume":"12","author":"Shree","year":"2021","journal-title":"Nat. Commun."},{"issue":"1","key":"2026090104153829700_cit25","doi-asserted-by":"publisher","first-page":"346","DOI":"10.1038\/s41377-025-01983-y","article-title":"Interface second harmonic generation enhancement in\nbulk WS2\/MoS2 hetero-bilayer van der Waals nanoantennas","volume":"14","author":"Tognazzi","year":"2025","journal-title":"Light: Science & Applications"},{"issue":"4","key":"2026090104153829700_cit26","doi-asserted-by":"publisher","first-page":"273","DOI":"10.1007\/s12274-008-8036-1","article-title":"Raman spectroscopy\nand imaging of graphene","volume":"1","author":"Ni","year":"2008","journal-title":"Nano Research"},{"issue":"4","key":"2026090104153829700_cit27","doi-asserted-by":"publisher","first-page":"465","DOI":"10.1002\/smll.201001628","article-title":"Hunting for\nMonolayer Boron Nitride: Optical and Raman Signatures","volume":"7","author":"Gorbachev","year":"2011","journal-title":"Small"},{"issue":"46","key":"2026090104153829700_cit28","doi-asserted-by":"publisher","first-page":"10224","DOI":"10.1002\/adma.201602889","article-title":"Facile Synthesis of Single Crystal\nPtSe2 Nanosheets for Nanoscale Electronics","volume":"28","author":"Wang","year":"2016","journal-title":"Adv. Mater."},{"issue":"7","key":"2026090104153829700_cit29","doi-asserted-by":"publisher","first-page":"1385","DOI":"10.1002\/adfm.201102111","article-title":"From Bulk\nto Monolayer MoS2: Evolution of Raman Scattering","volume":"22","author":"Li","year":"2012","journal-title":"Adv. Funct.\nMater."},{"issue":"26","key":"2026090104153829700_cit30","doi-asserted-by":"publisher","first-page":"5200","DOI":"10.1002\/adma.201600400","article-title":"Epitaxial\nUltrathin Organic Crystals on Graphene for High-Efficiency Phototransistors","volume":"28","author":"Liu","year":"2016","journal-title":"Adv. Mater."},{"issue":"1","key":"2026090104153829700_cit31","doi-asserted-by":"publisher","first-page":"3826","DOI":"10.1038\/srep03826","article-title":"Ultrahigh-Gain Photodetectors\nBased on Atomically Thin Graphene-MoS2 Heterostructures","volume":"4","author":"Zhang","year":"2014","journal-title":"Sci. Rep."},{"issue":"7","key":"2026090104153829700_cit32","doi-asserted-by":"publisher","first-page":"497","DOI":"10.1038\/nnano.2013.100","article-title":"Ultrasensitive photodetectors based on monolayer MoS2","volume":"8","author":"Lopez-Sanchez","year":"2013","journal-title":"Nat. Nanotechnol."},{"issue":"1","key":"2026090104153829700_cit33","doi-asserted-by":"publisher","first-page":"74","DOI":"10.1021\/nn2024557","article-title":"Single-Layer MoS2 Phototransistors","volume":"6","author":"Yin","year":"2012","journal-title":"ACS Nano"},{"issue":"8","key":"2026090104153829700_cit34","doi-asserted-by":"publisher","first-page":"8653","DOI":"10.1021\/nn503521c","article-title":"Role of Metal\nContacts in High-Performance Phototransistors\nBased on WSe2 Monolayers","volume":"8","author":"Zhang","year":"2014","journal-title":"ACS Nano"},{"issue":"12","key":"2026090104153829700_cit35","doi-asserted-by":"publisher","first-page":"1938","DOI":"10.1002\/adfm.201504408","article-title":"High Responsivity Phototransistors\nBased on Few-Layer ReS2 for Weak Signal Detection","volume":"26","author":"Liu","year":"2016","journal-title":"Adv. Funct. Mater."},{"issue":"21","key":"2026090104153829700_cit36","doi-asserted-by":"publisher","DOI":"10.1002\/adma.201705934","article-title":"Few-Layer GeAs Field-Effect\nTransistors and Infrared Photodetectors","volume":"30","author":"Guo","year":"2018","journal-title":"Adv.\nMater."},{"issue":"12","key":"2026090104153829700_cit37","doi-asserted-by":"publisher","first-page":"7853","DOI":"10.1021\/acs.nanolett.5b02523","article-title":"Gate Controlled Photocurrent Generation\nMechanisms in High-Gain In2Se3 Phototransistors","volume":"15","author":"Island","year":"2015","journal-title":"Nano Lett."},{"issue":"10","key":"2026090104153829700_cit38","doi-asserted-by":"publisher","first-page":"17080","DOI":"10.1021\/acsnano.2c07347","article-title":"Optoelectronics of\nAtomic Metal\u2013Semiconductor\nInterfaces in Tin-Intercalated MoS2","volume":"16","author":"Twitto","year":"2022","journal-title":"ACS Nano"},{"issue":"3","key":"2026090104153829700_cit39","doi-asserted-by":"publisher","first-page":"2987","DOI":"10.1021\/acsnano.5c19148","article-title":"Broadband Phototransistors Enabled by Dual Transport\nChannels in Topological Insulator Bi2Te2Se","volume":"20","author":"Zhong","year":"2026","journal-title":"ACS Nano"},{"issue":"4","key":"2026090104153829700_cit40","doi-asserted-by":"publisher","first-page":"950","DOI":"10.1021\/acsphotonics.6b01049","article-title":"PbS-Decorated\nWS2 Phototransistors with Fast Response","volume":"4","author":"Yu","year":"2017","journal-title":"ACS Photonics"},{"issue":"21","key":"2026090104153829700_cit41","doi-asserted-by":"publisher","DOI":"10.1063\/1.4968808","article-title":"Ultrafast\nand ultrasensitive phototransistors based on few-layered HfSe2","volume":"109","author":"Yin","year":"2016","journal-title":"Appl. Phys. Lett."},{"issue":"16","key":"2026090104153829700_cit42","doi-asserted-by":"publisher","DOI":"10.1002\/adfm.201870106","article-title":"Photodetectors:\nFast, Self-Driven, Air-Stable, and\nBroadband Photodetector Based on Vertically Aligned PtSe2\/GaAs Heterojunction","volume":"28","author":"Zeng","year":"2018","journal-title":"Adv. Funct. Mater."},{"issue":"9","key":"2026090104153829700_cit43","doi-asserted-by":"publisher","DOI":"10.1002\/smll.201703293","article-title":"High-Performance Photovoltaic Detector\nBased on MoTe2\/MoS2 Van der Waals Heterostructure","volume":"14","author":"Chen","year":"2018","journal-title":"Small"},{"issue":"15","key":"2026090104153829700_cit44","doi-asserted-by":"publisher","first-page":"14215","DOI":"10.1021\/acsami.8b21315","article-title":"Gate-Tunable\nPhotodetection\/Voltaic Device Based on BP\/MoTe2 Heterostructure","volume":"11","author":"Xie","year":"2019","journal-title":"ACS Appl. Mater. Interfaces"},{"issue":"1","key":"2026090104153829700_cit45","doi-asserted-by":"publisher","first-page":"564","DOI":"10.1038\/s41467-025-55887-x","article-title":"High-sensitivity, high-speed, broadband mid-infrared photodetector\nenabled by a van der Waals heterostructure with a vertical transport\nchannel","volume":"16","author":"Wu","year":"2025","journal-title":"Nat. Commun."},{"issue":"12","key":"2026090104153829700_cit46","doi-asserted-by":"publisher","DOI":"10.1002\/adfm.201900314","article-title":"AsP\/InSe Van der Waals\nTunneling Heterojunctions with Ultrahigh Reverse\nRectification Ratio and High Photosensitivity","volume":"29","author":"Wu","year":"2019","journal-title":"Adv. Funct. Mater."},{"issue":"3","key":"2026090104153829700_cit47","doi-asserted-by":"publisher","first-page":"2489","DOI":"10.1007\/s12274-021-3745-9","article-title":"PdSe2\/MoSe2 vertical heterojunction for self-powered photodetector\nwith high performance","volume":"15","author":"Zhong","year":"2022","journal-title":"Nano Research"},{"issue":"3","key":"2026090104153829700_cit48","doi-asserted-by":"publisher","first-page":"4405","DOI":"10.1021\/acsnano.0c08075","article-title":"An Ultrafast WSe2 Photodiode Based on a Lateral p-i-n\nHomojunction","volume":"15","author":"Zhang","year":"2021","journal-title":"ACS Nano"},{"issue":"24","key":"2026090104153829700_cit49","doi-asserted-by":"publisher","first-page":"11645","DOI":"10.1021\/acs.nanolett.3c03500","article-title":"Self-Powered\nProgrammable van der Waals Photodetectors with Nonvolatile Semifloating\nGate","volume":"23","author":"Liu","year":"2023","journal-title":"Nano Lett."},{"issue":"1","key":"2026090104153829700_cit50","doi-asserted-by":"publisher","first-page":"3198","DOI":"10.1038\/s41467-022-30951-y","article-title":"Ultra-sensitive polarization-resolved black phosphorus\nhomojunction\nphotodetector defined by ferroelectric domains","volume":"13","author":"Wu","year":"2022","journal-title":"Nat. Commun."},{"issue":"12","key":"2026090104153829700_cit51","doi-asserted-by":"publisher","DOI":"10.1002\/advs.201700323","article-title":"Photogating in Low Dimensional Photodetectors","volume":"4","author":"Fang","year":"2017","journal-title":"Advanced Science"},{"issue":"11","key":"2026090104153829700_cit52","doi-asserted-by":"publisher","first-page":"826","DOI":"10.1038\/nnano.2013.206","article-title":"Graphene-MoS2 hybrid structures\nfor multifunctional photoresponsive memory devices","volume":"8","author":"Roy","year":"2013","journal-title":"Nat. Nanotechnol."},{"issue":"1","key":"2026090104153829700_cit53","doi-asserted-by":"publisher","first-page":"193","DOI":"10.1007\/s40843-022-2119-1","article-title":"Si-CMOS-compatible\n2D PtSe2-based self-driven photodetector\nwith ultrahigh responsivity and specific detectivity","volume":"66","author":"Ye","year":"2023","journal-title":"Science China Materials"},{"issue":"9","key":"2026090104153829700_cit54","doi-asserted-by":"publisher","first-page":"9124","DOI":"10.1021\/acsnano.5b03309","article-title":"Impurities\nand Electronic Property Variations of Natural MoS2 Crystal\nSurfaces","volume":"9","author":"Addou","year":"2015","journal-title":"ACS Nano"},{"issue":"12","key":"2026090104153829700_cit55","doi-asserted-by":"publisher","DOI":"10.1002\/adfm.202310811","article-title":"Approaching the Robust Linearity in Dual-Floating van der Waals Photodiode","volume":"34","author":"Xu","year":"2024","journal-title":"Adv. Funct. Mater."},{"issue":"1","key":"2026090104153829700_cit56","doi-asserted-by":"publisher","first-page":"2209","DOI":"10.1038\/s41467-025-56886-8","article-title":"Tunneling-barrier-controlled\nsensitive deep ultraviolet photodetectors based on van der Waals heterostructures","volume":"16","author":"Li","year":"2025","journal-title":"Nat. Commun."},{"issue":"1","key":"2026090104153829700_cit57","doi-asserted-by":"publisher","first-page":"2224","DOI":"10.1038\/s41467-023-37635-1","article-title":"How to characterize\nfigures of merit of two-dimensional photodetectors","volume":"14","author":"Wang","year":"2023","journal-title":"Nat. Commun."},{"issue":"10","key":"2026090104153829700_cit58","doi-asserted-by":"publisher","first-page":"780","DOI":"10.1038\/nnano.2014.215","article-title":"Photodetectors based on graphene,\nother two-dimensional\nmaterials and hybrid systems","volume":"9","author":"Koppens","year":"2014","journal-title":"Nat. Nanotechnol."},{"issue":"1","key":"2026090104153829700_cit59","doi-asserted-by":"publisher","first-page":"1","DOI":"10.1038\/s41566-018-0288-z","article-title":"Accurate characterization\nof next-generation thin-film photodetectors","volume":"13","author":"Fang","year":"2019","journal-title":"Nat. Photonics"},{"issue":"3","key":"2026090104153829700_cit60","doi-asserted-by":"publisher","DOI":"10.1002\/smll.202407015","article-title":"High Performance Perovskite\nPhotodiodes via Molecule-Assisted Interfacial and Bulk Modulations","volume":"21","author":"Yan","year":"2025","journal-title":"Small"},{"issue":"45","key":"2026090104153829700_cit61","doi-asserted-by":"publisher","DOI":"10.1002\/adfm.75293","article-title":"Polarity-Modulated P-Type WS2 Nanotube Thickets for High-Performance\nPhotodetection","volume":"36","author":"Xu","year":"2026","journal-title":"Adv. Funct. Mater."},{"issue":"11","key":"2026090104153829700_cit62","doi-asserted-by":"publisher","first-page":"6172","DOI":"10.1021\/acsphotonics.5c01663","article-title":"Toward the\nModulation of Temperature Dependence of Photoresponse in Heterojunctions:\nSynergistic Effects from Carrier Trapping and Mobility Competition\nDynamics","volume":"12","author":"Yang","year":"2025","journal-title":"ACS Photonics"},{"issue":"39","key":"2026090104153829700_cit63","doi-asserted-by":"publisher","DOI":"10.1002\/adma.202203283","article-title":"Fully Depleted Self-Aligned\nHeterosandwiched Van Der Waals Photodetectors","volume":"34","author":"Wang","year":"2022","journal-title":"Adv. Mater."},{"issue":"13","key":"2026090104153829700_cit64","doi-asserted-by":"publisher","first-page":"6062","DOI":"10.1021\/acsaelm.5c00759","article-title":"Two-Dimensional Molybdenum Ditelluride\nWaveguide-Integrated Schottky Photodiode for Near-Infrared Detection","volume":"7","author":"Shi","year":"2025","journal-title":"ACS Applied Electronic Materials"},{"issue":"1","key":"2026090104153829700_cit65","doi-asserted-by":"publisher","first-page":"7372","DOI":"10.1038\/ncomms8372","article-title":"Interlayer orientation-dependent\nlight absorption and emission in monolayer semiconductor stacks","volume":"6","author":"Heo","year":"2015","journal-title":"Nat. Commun."},{"issue":"19","key":"2026090104153829700_cit66","doi-asserted-by":"publisher","DOI":"10.1002\/adfm.202300686","article-title":"Progress and\nInsight of Van der Waals Heterostructures Containing Interlayer Transition\nfor Near Infrared Photodetectors","volume":"33","author":"Ahmad","year":"2023","journal-title":"Adv. Funct.\nMater."},{"key":"2026090104153829700_cit67","doi-asserted-by":"publisher","first-page":"0546","DOI":"10.34133\/research.0546","article-title":"Ga2O3 Solar-Blind Deep-Ultraviolet Photodetectors\nwith a Suspended Structure for High Responsivity and High-Speed Applications","volume":"7","author":"Li","year":"2024","journal-title":"Research"},{"key":"2026090104153829700_cit68","doi-asserted-by":"publisher","first-page":"0195","DOI":"10.34133\/research.0195","article-title":"A High-Performance\nMoS2-Based Visible-Near-Infrared Photodetector from Gateless\nPhotogating Effect Induced by Nickel Nanoparticles","volume":"6","author":"Duan","year":"2023","journal-title":"Research"},{"issue":"4","key":"2026090104153829700_cit69","doi-asserted-by":"publisher","DOI":"10.1002\/adom.202001708","article-title":"Recent Progress\nin Short- to Long-Wave Infrared Photodetection Using\n2D Materials and Heterostructures","volume":"9","author":"Guan","year":"2021","journal-title":"Advanced\nOptical Materials"}],"container-title":["Nano Letters"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/pubs.acs.org\/doi\/pdf\/10.1021\/acs.nanolett.6c01932","content-type":"application\/pdf","content-version":"vor","intended-application":"unspecified"},{"URL":"https:\/\/pubs.acs.org\/nalefd\/article-pdf\/26\/33\/10992\/66478492\/acs.nanolett.6c01932.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"syndication"},{"URL":"https:\/\/pubs.acs.org\/nalefd\/article-pdf\/26\/33\/10992\/66478492\/acs.nanolett.6c01932.pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2026,9,1]],"date-time":"2026-09-01T08:15:49Z","timestamp":1788250549000},"score":1,"resource":{"primary":{"URL":"https:\/\/pubs.acs.org\/nalefd\/article\/26\/33\/10992\/5251529\/High-Speed-and-High-Gain-Graphene-Photovoltaic"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2026,8,10]]},"references-count":69,"journal-issue":{"issue":"33","published-online":{"date-parts":[[2026,8,10]]},"published-print":{"date-parts":[[2026,8,26]]}},"URL":"https:\/\/doi.org\/10.1021\/acs.nanolett.6c01932","relation":{},"ISSN":["1530-6984","1530-6992"],"issn-type":[{"value":"1530-6984","type":"print"},{"value":"1530-6992","type":"electronic"}],"subject":[],"published":{"date-parts":[[2026,8,10]]}}}