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However, dopant engineering consisting of well-controlled synthesis and robust identification of in-gap states is challenging. In this work, we addressed this challenge by first using finely tuned chemical vapor deposition to incorporate vanadium dopants into monolayer WS2 (V-WS2). Next, we utilized a suite of scanning probe microscopy techniques to identify and characterize individual dopants. The latter included conductive atomic force microscopy (cAFM), low-temperature scanning tunneling microscopy and spectroscopy (STM\/STS), and scanning transmission microscopy (STEM) and unambiguously revealed that vanadium dopants form deep in-gap states 0.35 eV above the valence band maximum (VBM) in V-WS2. Our experimental results are well supported by first-principles calculations and taken together demonstrate that V-WS2 is a promising platform for QISE applications.<\/jats:p>","DOI":"10.1021\/acs.nanolett.6c02833","type":"journal-article","created":{"date-parts":[[2026,8,31]],"date-time":"2026-08-31T12:03:46Z","timestamp":1788177826000},"page":"12802-12810","source":"Crossref","is-referenced-by-count":0,"title":["Individual\nVanadium Dopants Form Deep In-Gap States\nin Monolayer WS2"],"prefix":"10.1021","volume":"26","author":[{"given":"Tianhui","family":"Zhu","sequence":"first","affiliation":[{"name":"University of California , , , ,","place":["Santa Cruz, California, United States, 95064"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Carlos A.","family":"Gonzalez","sequence":"additional","affiliation":[{"name":"University of California , , , ,","place":["Santa Cruz, California, United States, 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